Characterization of Grain Boundaries in Recrystallized L12-Type Intermetallic Alloys

2005 ◽  
Vol 502 ◽  
pp. 151-156
Author(s):  
Yasuyuki Kaneno ◽  
Takayuki Takasugi
Keyword(s):  
Grain Boundaries ◽  
Electron Backscatter Diffraction ◽  
Stacking Fault ◽  
Grain Boundary Character Distribution ◽  
Grain Boundary Character ◽  
Disordered Alloys ◽  
Σ3 Boundary ◽  
Fcc Alloy ◽  
Backscatter Diffraction

Microstructural feature of the recrystallized Co-based (Co3Ti) and Ni-based (Ni3(Si,Ti) and Ni3Fe) ordered alloys with L12 structure was investigated by the electron backscatter diffraction (EBSD) method, with emphasis on grain boundary character distribution (GBCD). For comparison, the GBCDs of the recrystallized Co-Ni, Ni-Fe and 70/30 brass disordered alloys, and also copper, nickel and aluminum pure metals with A1 (fcc) structure, which have widely different stacking fault energies, were also determined. The frequency of Σ3 boundary for the Co-based alloys was higher than that for the Ni-based alloys, regardless of ordered L12 alloy or disordered fcc alloy, indicating that the frequency of Σ3 boundary was primarily dominated by stacking fault energy. Furthermore, the effect of ordering energy on structure and energy of the grain boundaries including Σ3 boundary in the ordered L12 alloys was discussed.

Grain Boundary Engineering: Progress and Challenges

2007 ◽  
Vol 539-543 ◽  
pp. 3389-3394 ◽  
Author(s):  
Wei Guo Wang
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Electron Backscatter Diffraction ◽  
Coincidence Site Lattice ◽  
Grain Boundary Character Distribution ◽  
Grain Boundary Engineering ◽  
Special Boundaries ◽  
Grain Boundary Character ◽  
Proposed Model ◽  
Backscatter Diffraction

The progress of grain boundary engineering (GBE) is overviewed and the challenges for further investigations emphasized. It points out that, the electron backscatter diffraction (EBSD) reconstruction of grain boundaries, which gives the information of connectivity interruption of general high angle boundaries (HABs), is more significant than purely pursuing high frequency of so-called special boundaries. The criterion for the optimization of grain boundary character distribution (GBCD) needs to be established. The energy spectrum and the degradation susceptibility of grain boundaries of various characters including HABs and low Σ（Σ≤29） coincidence site lattice (CSL) needs to be studied and ascertained. And finally, the newly proposed model of non-coherent Σ3 interactions for GBCD optimization are discussed.

scholarly journals Recent Advances in EBSD Characterization of Metals

Metals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1097
Author(s):  
Íris Carneiro ◽  
Sónia Simões
Keyword(s):  
Grain Boundary ◽  
Electron Backscatter Diffraction ◽  
Microstructural Characterization ◽  
Grain Boundary Character Distribution ◽  
Grain Boundary Character ◽  
Recent Advances ◽  
Wide Range ◽  
Plane Distribution ◽  
Backscatter Diffraction

Electron backscatter diffraction (EBSD) has been attracting enormous interest in the microstructural characterization of metals in recent years. This characterization technique has several advantages over conventional ones, since it allows obtaining a wide range of characterization possibilities in a single method, which is not possible in others. The grain size, crystallographic orientation, texture, and grain boundary character distribution can be obtained by EBSD analysis. Despite the limited resolution of this technique (20–50 nm), EBSD is powerful, even for nanostructured materials. Through this technique, the microstructure can be characterized at different scales and levels with a high number of microstructural characteristics. It is known that the mechanical properties are strongly related to several microstructural aspects such as the size, shape, and distribution of grains, the presence of texture, grain boundaries character, and also the grain boundary plane distribution. In this context, this work aims to describe and discuss the possibilities of microstructural characterization, recent advances, the challenges in sample preparation, and the application of the EBSD in the characterization of metals.

scholarly journals Coupling Automated Electron Backscatter Diffraction with Transmission Electron and Atomic Force Microscopies

2000 ◽  
Vol 6 (S2) ◽  
pp. 940-941
Author(s):  
A.J. Schwartz ◽  
M. Kumar ◽  
P.J. Bedrossian ◽  
W.E. King
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Thermomechanical Processing ◽  
Electron Backscatter Diffraction ◽  
Grain Boundary Character Distribution ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Backscatter ◽  
Network Engineering ◽  
Backscatter Diffraction

Grain boundary network engineering is an emerging field that encompasses the concept that modifications to conventional thermomechanical processing can result in improved properties through the disruption of the random grain boundary network. Various researchers have reported a correlation between the grain boundary character distribution (defined as the fractions of “special” and “random” grain boundaries) and dramatic improvements in properties such as corrosion and stress corrosion cracking, creep, etc. While much early work in the field emphasized property improvements, the opportunity now exists to elucidate the underlying materials science of grain boundary network engineering. Recent investigations at LLNL have coupled automated electron backscatter diffraction (EBSD) with transmission electron microscopy (TEM)5 and atomic force microscopy (AFM) to elucidate these fundamental mechanisms.An example of the coupling of TEM and EBSD is given in Figures 1-3. The EBSD image in Figure 1 reveals “segmentation” of boundaries from special to random and random to special and low angle grain boundaries in some grains, but not others, resulting from the 15% compression of an Inconel 600 polycrystal.

Effect of Plating Current Density and Frequency on the Crystallographic Texture of Electrodeposited Copper

2010 ◽  
Vol 638-642 ◽  
pp. 2841-2845 ◽  
Author(s):  
Ya Wen Lin ◽  
Jui Chao Kuo ◽  
Kuan Tai Lui ◽  
Delphic Chen
Keyword(s):  
Current Density ◽  
Crystallographic Texture ◽  
Electron Backscatter Diffraction ◽  
Preferred Orientation ◽  
High Yield ◽  
Grain Boundary Character Distribution ◽  
Grain Boundary Character ◽  
Microelectronic Technology ◽  
Backscatter Diffraction ◽  
The Relationship

For interconnect materials in the microelectronic technology copper has replaced aluminum due to its lower resistivity, higher thermal conductivity and better electromigration resistance. Recently, it was found that nanotwinned copper exhibits ultra high yield strength, ductility and electrical conductivity. Therefore, in this study the effect of plating current density and frequency were investigated on the crystallographic texture of Cu electrodeposited to understand the twin character. Electron backscatter diffraction (EBSD) was used for characterizing the preferred orientation, grain size distribution, and grain boundary character distribution. Three kinds of <110>, <111> and <112> textures were found to be related with the electrodeposited parameters of current density and frequency. Here we will discuss the relationship between the preferred orientation and the electrodeposited parameters.

Effect of Phosphorus Contents on Texture and Grain Boundary Character for the Annealing High Strength Ti-IF Steels

2013 ◽  
Vol 652-654 ◽  
pp. 929-933 ◽  
Author(s):  
Xin Li Song ◽  
Kun Peng ◽  
P.P. Zhang ◽  
J.Y. Wu ◽  
J. Zhou ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Recrystallization Texture ◽  
Volume Fraction ◽  
Electron Backscatter Diffraction ◽  
Coincidence Site Lattice ◽  
High Strength ◽  
Fiber Texture ◽  
Grain Boundary Character ◽  
Electron Backscatter ◽  
Backscatter Diffraction

The effect of phosphorus contents on texture and grain boundaries character for the high strength Ti-IF annealed for 120sec at 810oC are researched by electron backscatter diffraction technique（EBSD）. The recrystallization texture is approximated by the γ-fiber texture whose components are {111} and {111} orientation texture. The highest volume fraction of //ND texture is almost 80% for the sample containing 0.056%P. A large amount of coincidence site lattice(CSL) grain boundaries ∑3，∑5, ∑7，∑9，∑11 and ∑13b are obtained.

Microstructure Characterization of Large Strain Deformed Fe-32%Ni Alloy

2010 ◽  
Vol 146-147 ◽  
pp. 248-251
Author(s):  
Bai Xiong Liu ◽  
Bao Jun Han
Keyword(s):  
Electron Microscope ◽  
Grain Boundaries ◽  
Electron Backscatter Diffraction ◽  
Large Strain ◽  
Internal Stresses ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Ni Alloy ◽  
Backscatter Diffraction

High-resolution electron backscatter diffraction (EBSD) in scanning electron microscope and transmission electron microscope (TEM) were used to investigate the microstructure of Fe-32%Ni alloy processed by large strain multi-axial forging. The samples were compressed with loading direction changed through 90º from pass to pass at temperature of 500°C and a strain rate of 10-2/s. The results show the microstructure evolution is characterized by full development of almost equi-axed fine grains, not well-developed grain boundaries accompanied by high dislocation density and the existence of extensive extinction contours in the vicinity of grain boundaries, and the structure characteristics indicate that the grain boundaries are in a non-equilibrium state with high internal stresses.

Application of Electron Backscatter Diffraction for Crystallographic Characterization of Tin Whiskers

2012 ◽  
Vol 18 (4) ◽  
pp. 876-884 ◽  
Author(s):  
Joseph R. Michael ◽  
Bonnie B. McKenzie ◽  
Donald F. Susan
Keyword(s):  
Electron Backscatter Diffraction ◽  
Growth Direction ◽  
Tin Whiskers ◽  
Physical Growth ◽  
Final Choice ◽  
Advantages And Disadvantages ◽  
Electron Backscatter ◽  
Backscatter Diffraction

AbstractUnderstanding the growth of whiskers or high aspect ratio features on substrates can be aided when the crystallography of the feature is known. This study has evaluated three methods that utilize electron backscatter diffraction (EBSD) for the determination of the crystallographic growth direction of an individual whisker. EBSD has traditionally been a technique applied to planar, polished samples, and thus the use of EBSD for out-of-surface features is somewhat more difficult and requires additional steps. One of the methods requires the whiskers to be removed from the substrate resulting in the loss of valuable physical growth relationships between the whisker and the substrate. The other two techniques do not suffer this disadvantage and provide the physical growth information as well as the crystallographic growth directions. The final choice of method depends on the information required. The accuracy and the advantages and disadvantages of each method are discussed.

scholarly journals Application of Electron Backscatter Diffraction (EBSD) for Crystallographic Characterization of Aluminum-Doped Zinc Oxide Sputtered Films

2013 ◽  
Vol 19 (S4) ◽  
pp. 103-104
Author(s):  
C.B. Garcia ◽  
E. Ariza ◽  
C.J. Tavares
Keyword(s):  
Electron Microscopy ◽  
Grain Size ◽  
Zinc Oxide ◽  
Electron Backscatter Diffraction ◽  
Wide Range ◽  
Electron Backscatter ◽  
Aluminum Doped Zinc Oxide ◽  
Ebsd Technique ◽  
Backscatter Diffraction

Zinc Oxide is a wide band-gap compound semiconductor that has been used in optoelectronic and photovoltaic applications due to its good electrical and optical properties. Aluminium has been an efficient n-type dopant for ZnO to produce low resistivity films and high transparency to visible light. In addition, the improvement of these properties also depends on the morphology, crystalline structure and deposition parameters. In this work, ZnO:Al films were produced by d.c. pulsed magnetron sputtering deposition from a ZnO ceramic target (2.0 wt% Al2O3) on glass substrates, at a temperature of 250 ºC.The crystallographic orientation of aluminum doped zinc oxide (ZnO:Al) thin films has been studied by Electron Backscatter Diffraction (EBSD) technique. EBSD coupled with Scanning Electron Microscopy (SEM) is a powerful tool for the microstructural and crystallographic characterization of a wide range of materials.The investigation by EBSD technique of such films presents some challenges since this analysis requires a flat and smooth surface. This is a necessary condition to avoid any shadow effects during the experiments performed with high tilting conditions (70º). This is also essential to ensure a good control of the three dimensional projection of the crystalline axes on the geometrical references related to the sample.Crystalline texture is described by the inverse pole figure (IPF) maps (Figure 1). Through EBSD analysis it was observed that the external surface of the film presents a strong texture on the basal plane orientation (grains highlighted in red colour). Furthermore it was possible to verify that the grain size strongly depends on the deposition time (Figure 1 (a) and (b)). The electrical and optical film properties improve with increasing of the grain size, which can be mainly, attributed to the decrease in scattering grain boundaries which leads to an increasing in carrier mobility (Figure 2).The authors kindly acknowledge the financial support from the Portuguese Foundation for Science and Technology (FCT) scientific program for the National Network of Electron Microscopy (RNME) EDE/1511/RME/2005.

A Role of Low Energy Grain Boundaries in the Abnormal Grain Growth in Fe-3%Si Alloy

2011 ◽  
Vol 127 ◽  
pp. 89-94 ◽  
Author(s):  
Ye Chao Zhu ◽  
Jiong Hui Mao ◽  
Fa Tang Tan ◽  
Xue Liang Qiao
Keyword(s):  
Grain Boundaries ◽  
Grain Growth ◽  
Electron Backscatter Diffraction ◽  
Dominant Role ◽  
Coincidence Site Lattice ◽  
Diffraction Method ◽  
Abnormal Grain Growth ◽  
Low Energy ◽  
Backscatter Diffraction

Low energy grain boundaries were considered to be important in abnormal grain growth by theoretical deduction. The disorientation angles and coincidence site lattice grain boundaries distribution of more than 20 Goss grains and their neighboring matrix grains in primary recrystallized Fe-3%Si alloy were investigated using an electron backscatter diffraction method. It was found that the frequency of low energy grain boundaries of Goss grains which are more likely to abnormally grow are higher than their neighboring matrix grains, which indicated that low energy grain boundaries play a dominant role in the abnormal grain growth of Fe-3%Si alloy. The result meets well with the abnormal grain growth theory.

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