Two-Dimensional Nucleation of Cubic and 6H Silicon Carbide

2009 ◽  
Vol 615-617 ◽  
pp. 189-192 ◽  
Author(s):  
Remigijus Vasiliauskas ◽  
Mikael Syväjärvi ◽  
Milena Beshkova ◽  
Rositza Yakimova
Keyword(s):  
Substrate Surface ◽  
Growth Mode ◽  
Spiral Growth ◽  
Heteroepitaxial Growth ◽  
Step Flow ◽  
Homoepitaxial Growth ◽  
Unit Cell Size ◽  
Initial Stage ◽  
Higher Temperature ◽  
Step Flow Growth

The initial stage of heteroepitaxial growth of 3C-SiC and homoepitaxial growth of 6H-SiC on nominal 6H-SiC on-axis substrates has been studied. Before 3C-SiC starts to nucleate, 6H-SiC grows in a step-flow growth mode due to a slight off-orientation of the substrate surface already at about 1500oC. In the 1650-1700oC temperature interval 3C-SiC nucleates as 2D islands. A distance away from the 3C-SiC island 6H-SiC grows in step-flow mechanism. In the vicinity of the 3C-SiC islands the 6H-SiC growth steps start to change direction and even split into two steps with the equal height of 0.5 nm, which is approaching the unit cell size of cubic SiC. When the supersaturation is lower in comparison with the conditions for 3C-SiC growth, there is only formation of 6H-SiC, i.e. homoepitaxial growth. The growth mode of 6H-SiC is dependent on temperature. At the lowest temperature there is spiral growth while at higher temperature 2D nucleation is preferred.

Growth Mode and Defects in Aluminum Nitride Sublimated on (0001) 6H-SiC Substrates

2000 ◽  
Vol 639 ◽  
Author(s):  
Lianghong Liu ◽  
Bei Liu ◽  
Ying Shi ◽  
J. H. Edgar
Keyword(s):  
Substrate Surface ◽  
Surface Preparation ◽  
Growth Mode ◽  
Island Growth ◽  
Substrate Preparation ◽  
Step Flow ◽  
Long Time ◽  
Step Flow Growth ◽  
Sublimation Growth ◽  
Thermal Expansion Coefficient Mismatch

ABSTRACTThe effect of substrate preparation on the sublimation growth of AlN on 6H-SiC was investigated at about 1800°C and 400 torr. Short and long-time sublimation growths of AlN indicated that the nucleation, growth mode, and defects formed depended on the substrate surface preparation. Growth on an off-axis 6H-SiC substrate with 6H-SiC epilayer was in the step flow growth mode in contrast to the island growth mode on as-received substrates, while the 2-D growth was achieved on substrates first coated with an AlN epitaxial layer. Cracks due to the lattice and mainly large thermal expansion coefficient mismatch were always observed in the deposited AlN crystal, as characterized by SEM and optical microscopy.

Bi induced step-flow growth in the homoepitaxial growth of Au(111)

2005 ◽  
Vol 252 (2) ◽  
pp. 364-371 ◽  
Author(s):  
M. Kamiko ◽  
H. Mizuno ◽  
H. Chihaya ◽  
J.-H. Xu ◽  
I. Kojima ◽  
...  
Keyword(s):  
Step Flow ◽  
Homoepitaxial Growth ◽  
Step Flow Growth

scholarly journals Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5964
Author(s):  
Guoqing Shao ◽  
Juan Wang ◽  
Shumiao Zhang ◽  
Yanfeng Wang ◽  
Wei Wang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Cross Section ◽  
Growth Model ◽  
Diamond Growth ◽  
Step Flow ◽  
Homoepitaxial Growth ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Step Flow Growth

Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.

HOMOEPITAXIAL GROWTH ON Cu(111) PROBED BY HELIUM ATOM SCATTERING

1994 ◽  
Vol 01 (04) ◽  
pp. 509-512 ◽  
Author(s):  
P.C. DASTOOR ◽  
J. ELLIS ◽  
A. REICHMUTH ◽  
H. BULLMAN ◽  
B. HOLST ◽  
...  
Keyword(s):  
Helium Atom ◽  
Diffusion Rate ◽  
Growth Mode ◽  
Helium Atom Scattering ◽  
Step Flow ◽  
Homoepitaxial Growth ◽  
Atom Scattering ◽  
Multilayer Formation ◽  
Substrate Temperatures ◽  
Step Edges

The homoepitaxial growth of Cu(111) has been investigated using specular helium atom scattering. Between 400 and 110 K the growth mode gradually changes from step flow at the higher temperatures to multilayer formation at low temperatures. Layerwise growth is not observed for any of the evaporation rates or substrate temperatures investigated, indicating a low diffusion rate across step edges. By lightly sputtering the surface, the density of growth nuclei and hence of step edges can be increased and a more layerwise growth mode results from the improved interlayer mass transport.

4H-SiC Homoepitaxial Growth on Substrates with Different Off-Cut Directions

2011 ◽  
Vol 679-680 ◽  
pp. 55-58 ◽  
Author(s):  
Birgit Kallinger ◽  
Bernd Thomas ◽  
Patrick Berwian ◽  
Jochen Friedrich ◽  
Gerd Trachta ◽  
...  
Keyword(s):  
Growth Process ◽  
Screw Dislocations ◽  
Force Microscopy ◽  
Step Flow ◽  
Homoepitaxial Growth ◽  
Atomic Force ◽  
P Type ◽  
Step Flow Growth ◽  
Edge Dislocations ◽  
Doping Range

Homoepitaxial growth on 4° off-axis substrates with different off-cut directions, i.e. [11-20] and [1-100], was investigated using a commercial CVD reactor. The characteristics of the growth process on substrates with different off-cut directions were determined with respect to applicable C/Si ratio, growth rate and n- and p-type doping range. Stable step flow growth was achieved over a broad range of C/Si ratio at growth rates ~ 15 µm/h in both cases. The n-type doping level of epilayers can be controlled at least in the range from 5  1014 cm-3 to 3  1017 cm-3 on both types of substrates. Highly p-type epilayers with p = 2  1019 cm-3 can also be grown on [1-100] off-cut substrates. Hence, the growth process for standard substrates was successfully transferred to [1-100] off-cut substrates resulting in epilayers with similar doping levels. The dislocation content of the grown epilayers was investigated by means of defect selective etching (DSE) in molten KOH. For both off-cut directions of the substrates, similar densities of threading edge dislocations (TED), threading screw dislocations (TSD) and basal plane dislocations (BPD) were found in the epilayers. Epilayers with very low BPD density can be grown on both kinds of substrates. The remaining BPDs in epilayers are inclined along the off-cut direction of the substrate. The surface morphology and roughness was investigated by atomic force microscopy (AFM). The epilayers grown on [1-100] off-cut substrates are smoother than those on standard substrates.

Diverse effects of two-dimensional and step flow growth mode induced microstructures on the magnetic anisotropies of SrRuO3 thin films

2006 ◽  
Vol 89 (12) ◽  
pp. 124104 ◽  
Author(s):  
Y. Z. Yoo ◽  
O. Chmaissem ◽  
S. Kolesnik ◽  
A. Ullah ◽  
L. B. Lurio ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Mode ◽  
Two Dimensional ◽  
Step Flow ◽  
Step Flow Growth

HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices

2014 ◽  
Vol 778-780 ◽  
pp. 210-213
Author(s):  
Birgit Kallinger ◽  
Christian Ehlers ◽  
Patrick Berwian ◽  
Mathias Rommel ◽  
Jochen Friedrich
Keyword(s):  
Hydrogen Chloride ◽  
Point Defects ◽  
Growth Rates ◽  
High Growth ◽  
Growth Mode ◽  
Step Flow ◽  
Bipolar Devices ◽  
Step Flow Growth ◽  
Total Concentrations

The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 μm/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 1013 cm-3. But, the HCl addition shows an ambivalent influence on the concentration of the lifetime killer defect Z1/2. For low growth rates, the Z1/2 concentration slightly decreases with increasing HCl addition. For higher growth rates, the Z1/2 concentration increases with increasing HCl addition.

Molecular beam homoepitaxial growth of MgO(001)

1994 ◽  
Vol 9 (11) ◽  
pp. 2944-2952 ◽  
Author(s):  
S.A. Chambers ◽  
T.T. Tran ◽  
T.A. Hileman
Keyword(s):  
Electron Spectroscopy ◽  
High Speed ◽  
Molecular Beam ◽  
Step Flow ◽  
Homoepitaxial Growth ◽  
Crystallographic Order ◽  
Step Flow Growth ◽  
First Time

We describe homoepitaxial growth and detailed in situ characterization of MgO(001). We have used, for the first time, high-speed Auger electron spectroscopy as a real-time probe of film composition during growth. Excellent short-range and long-range crystallographic order are achieved in films grown to a thickness of several hundred angstroms in the substrate temperature range of 450 °C to 750 °C. Moreover, the films become more laminar as the growth temperature increases, suggesting that MgO grows homoepitaxially by the step-flow growth mechanism at elevated temperature. The surfaces of films grown at 650°and 750 °C are smoother than those obtained by cleaving MgO(001).

scholarly journals Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates

2001 ◽  
Vol 6 ◽  
Author(s):  
Lianghong Liu ◽  
B. Liu ◽  
Y. Shi ◽  
J.H. Edgar
Keyword(s):  
Thermal Expansion ◽  
Aluminum Nitride ◽  
Optical Microscopy ◽  
Thermal Expansion Coefficient ◽  
Growth Mode ◽  
Island Growth ◽  
Substrate Preparation ◽  
Step Flow ◽  
Step Flow Growth ◽  
Sublimation Growth

The effect of substrate preparation on the sublimation growth of AlN at about 1800 °C and 400 torr on (0001) 6H-SiC was investigated. The AlN grew in the step flow growth mode on an off-axis 6H-SiC substrate with a 6H-SiC epilayer, an island growth mode on as-received substrates, and a 2-D growth mode on substrates first coated with an AlN epitaxial layer by MOCVD. Cracks in the deposited AlN crystal due to the lattice and thermal expansion coefficient mismatches were always observed by SEM and optical microscopy.

Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates

2000 ◽  
Vol 640 ◽  
Author(s):  
S. Nishino ◽  
T. Nishiguchi ◽  
Y. Masuda ◽  
M. Sasaki ◽  
S. Ohshima
Keyword(s):  
Growth Temperature ◽  
Layer Growth ◽  
Growth Mode ◽  
Layer By Layer ◽  
Step Bunching ◽  
Step Flow ◽  
Cvd Growth ◽  
The Difference ◽  
Step Flow Growth ◽  
Sublimation Growth

ABSTRACTSublimation growth of 6H-SiC was performed on {1100} and {1120} substrates. The difference between the growth on {1100} plane and {1120} plane was observed. {1100} facet was almost flat and there were grooves oriented toward <1120> direction. The step bunching was observed on {1100} plane 5° off-axis. A lot of pits were introduced on {1120} plane of the crystal grown both on {1100} and {1120} substrates. Step flow growth toward <1120> direction created the pits on {1120} plane. It was important to grow crystal by layer by layer growth on {1120} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {1120} plane may be reduced as same as CVD growth on {1120} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth.

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