An Interesting Result of Dielectric Property for Novel Polyimides with Fluorene Groups

2010 ◽  
Vol 663-665 ◽  
pp. 511-514 ◽  
Author(s):  
Yuan Yuan ◽  
Bing Xie ◽  
Yu Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Dielectric Property ◽  
Dielectric Constants ◽  
The Other ◽  
Polyimide Films ◽  
Low Dielectric ◽  
High Dielectric ◽  
Biphenyltetracarboxylic Dianhydride

A series of polyimide thin films were prepared successfully based on bis[3,5-dimethyl-4- (4-aminophenoxy)phenyl]methane （BDAPM）, 9,9-bis（4-（4-aminophenoxy）phenyl）fluorene (BAOFL) and different dianhydrides. And an interesting result of dielectric property for polyimide thin films was found that the polyimide thin film prepared with 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) exhibited high dielectric constants of 5.7 at 1MHz. Conversely, the other polyimides possessing fluorene groups showed low dielectric constants. The structures and the mechanical properties of polyimide films also proved the reason for results of dielectric properties.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

Study on preparing PLT(28) thin film and its electro-optic effect

1998 ◽  
Vol 13 (5) ◽  
pp. 1266-1270 ◽  
Author(s):  
Ai-Li Ding ◽  
Wei-Gen Luo ◽  
P. S. Qiu ◽  
J. W. Feng ◽  
R. T. Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Faraday Effect ◽  
The Other ◽  
Ceramic Powders ◽  
Glass Substrates ◽  
Annealing Conditions ◽  
Electro Optic

PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected by the sputtering process. The film with larger grains exhibits stronger E-O effect. The quadratic E-O coefficient of PLT(28) thin film varies in the range of 0.1 × 10−16 to 1.0 × 10−16 (m/v)2.

Epitaxial Growth and Anisotropic Dielectric Properties of La-Doped Bi4Ti3O12 Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 177-180
Author(s):  
Jang Sik Lee ◽  
Q.X. Jia
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
The Other ◽  
Field Range ◽  
Anisotropic Dielectric ◽  
Dielectric Nonlinearity ◽  
La Doped

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.

Mechanical deflection of cantilever microbeams: A new technique for testing the mechanical properties of thin films

1988 ◽  
Vol 3 (5) ◽  
pp. 931-942 ◽  
Author(s):  
T. P. Weihs ◽  
S. Hong ◽  
J. C. Bravman ◽  
W. D. Nix
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Single Layer ◽  
Beam Theory ◽  
New Technique ◽  
Young’S Moduli ◽  
Silicon Micromachining ◽  
A New Technique

The mechanical deflection of cantilever microbeams is presented as a new technique for testing the mechanical properties of thin films. Single-layer microbeams of Au and SiO2 have been fabricated using conventional silicon micromachining techniques. Typical thickness, width, and length dimensions of the beams are 1.0,20, and 30 μm, respectively. The beams are mechanically deflected by a Nanoindenter, a submicron indentation instrument that continuously monitors load and deflection. Using simple beam theory and the load-deflection data, the Young's moduli and the yield strengths of thin-film materials that comprise the beams are determined. The measured mechanical properties are compared to those obtained by indenting similar thin films supported by their substrate.

Microstructure and Dielectric Properties of LixTixNi1-2xO Thin Films

2008 ◽  
Vol 368-372 ◽  
pp. 1817-1819
Author(s):  
Cui Hua Zhao ◽  
Bo Ping Zhang ◽  
Yong Liu ◽  
Song Jie Li
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Co Doping ◽  
Grain Sizes ◽  
Uniform Microstructure ◽  
Coating Method ◽  
High Dielectric

LixTixNi1-2xO (x =0, 10 and 20 at. %) thin films with 200 nm in thickness were deposited on Pt/Ti/SiO2/Si (100) by a sol-gel spin-coating method. All samples have a uniform microstructure. The grain sizes grew from 100 nm to 300 nm by co-doping Li and Ti. The LiTiNiO thin films consist of NiO, NiTiO3 and Li2NiO2, while the Li-free thin films consist of NiO, NiTiO3 and NiTi0.99O3. The dielectric properties of the LiTiNiO thin films improved obviously by co-doping Li and Ti, but excess Li increases the amount of Li2NiO2 phase and decreases the dielectric properties. The dielectric constants at 100 Hz for the Li0.1Ti0.1Ni0.8O and Li0.2Ti0.2Ni0.6O thin films are 506 and 388 respectively. Appropriate co-doping contents of Li and Ti are important to obtain a high dielectric property.

TiO2 and ZnO Water Sol Preparation by Sol–Gel Method and Application on Polyester Fabric of Antistatic Finishing

2011 ◽  
Vol 331 ◽  
pp. 270-274 ◽  
Author(s):  
Yan Yan Chu ◽  
Qing Wang ◽  
Shi Zhong Cui
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Sol Gel ◽  
Physical And Mechanical Properties ◽  
Polyester Fabric ◽  
Pure Tio2 ◽  
The Other ◽  
Baking Process ◽  
Result Show ◽  
The Stability

Abstract：Pure TiO2 water sol, pure ZnO water sol and three compound TiO2/ZnO water sols are prepared under low temperature. Then the padding and baking process is used to put the functional sol liquid on the fabric. SEM is use to analyzed the change of surface feature and the result show that all of the water sol except pure ZnO water sol liquid formed a thin film on the fiber The stability of pure ZnO water sol is the best one and the pure TiO2 water sol is the worst one at temperature of 15°C. The compound water sols stabilities are between these two water sols and with the more amount of ZnO, the stability last longer. Both mole of TiO2 and ZnO with the rate of 5 to 5 and 7 to 3 display the best antistatic behavior, but the washing fastnesses are not good. After treatment, the moisture regain displays most dramatically changes; the next one is whiteness of fabric, but the other physical and mechanical properties have a little change.

Adhesion and Dielectric Strength of Ultra-Low Dielectric Constant PTFE Thin Films

1997 ◽  
Vol 476 ◽  
Author(s):  
C.T. Rosenmaver ◽  
J. W. Bartz ◽  
J. Hammes
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Strength ◽  
Low Dielectric Constant ◽  
Thermal Treatments ◽  
Test Results ◽  
Low Dielectric ◽  
Metal Insulator Metal ◽  
Thickness Standard ◽  
High Dielectric

AbstractPrevious work has demonstrated the potential of polytetrafluoroethylene (PTFE) thin films for ULSI applications. The films are deposited from PTFE nanoemulsions. They have an ultra-low dielectric constant of 1.7 to 2.0, a leakage current of less than 1.0 nA/cm2 @ 0.2 MV/cm and a dielectric strength of from 0.5 to 2.4 MV/cm. They are thermally stable (isothermal weight loss < 1.0 %/hr at 450 °C), uniform (thickness standard deviation < 2%), and have excellent gap-fill properties (viscosity of 1.55 cP and surface tension of 18 mN/m). The films are inert with respect to all known semiconductor process chemicals, yet they are easily etched in an oxygen plasma.This paper discusses the processing technology that has been developed to process PTFE films with these properties. Specifically, it addresses two recent discoveries: 1) Good adhesion of spin-coated PTFE to SiO2 surfaces; and 2) high dielectric strength of PTFE thin films spin-coat deposited onto rigid substrates. The adhesion-promoting and thermal treatments necessary to produce these properties are detailed. Stud pull test results and test results from metal-insulator-metal (MIM) capacitor structures are given.

Deposition energy dependence in cluster-assembled thin film densities

2005 ◽  
Vol 908 ◽  
Author(s):  
Kristoffer Meinander ◽  
Tina Clauss ◽  
Kai Nordlund
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Molecular Dynamics ◽  
Energy Dependence ◽  
Computer Simulations ◽  
Cluster Atom ◽  
Cu Nanoclusters ◽  
Deposition Energy

AbstractMechanical properties of thin films grown by nanocluster deposition are highly dependent on the energy at which the clusters are deposited. Using molecular dynamics computer simulations we have quantitatively studied variations in the properties of copper thin films grown by deposition of Cu nanoclusters, at energies ranging from 5 meV to 10 eV per cluster atom, on a Cu (100) substrate.

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