Compromising Effect on Development of Recrystallization Texture in Aluminium Sheet – A 2D MC Type Simulation –
2011 ◽
Vol 702-703
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pp. 655-658
Keyword(s):
The migration rates of C->Si, Si->C, and Si->Sj were assumed to be high and those of Si->Si and all other rates to be low. Here Si(i=1,2,3,4) is a variant of S orientation and C->Si means the growth of a cube grain into an Si grain. The textural development through grain coarsening was simulated as a function of the ratio of the high rate to the low one. The compromising effect surely promotes the development of the cube texture but its decisive development requires any asymmetry between C->Si and Si->C migration processes.
Keyword(s):
2013 ◽
Vol 585
◽
pp. 66-70
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Keyword(s):
2007 ◽
Vol 558-559
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pp. 229-234
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Keyword(s):
2005 ◽
Vol 495-497
◽
pp. 1213-1218
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2013 ◽
Vol 753
◽
pp. 293-296
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2005 ◽
Vol 105
◽
pp. 351-356
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Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates
1970 ◽
Vol 28
◽
pp. 456-457
Keyword(s):