Improved 4H-SiC N-MOSFET Interface Passivation by Combining N2O Oxidation with Boron Diffusion

2017 ◽  
Vol 897 ◽  
pp. 352-355 ◽  
Author(s):  
Maria Cabello ◽  
Victor Soler ◽  
Narcis Mestres ◽  
Josep Montserrat ◽  
José Rebollo ◽  
...  
Keyword(s):  
Field Effect ◽  
High Mobility ◽  
Channel Length ◽  
Boron Diffusion ◽  
High Concentration ◽  
Interface Quality ◽  
Electrical Analysis ◽  
Interface Passivation ◽  
Very High ◽  
Peak Field

A new oxide configuration for the development of high mobility 4H-SiC lateral MOSFETs is proposed in this work. The oxide is composed by a rapid thermal oxidation (RTO) in N2O environment, a Boron diffusion into the SiO2 and a PECVD TEOS deposited oxide, in order to improve the interface quality. The obtained MOSFETs show very high peak field effect mobilities ranging from 80 up to more than 170 cm2V-1s-1 in MOSFETs with higher channel length than the tested transistors. The physical (SIMS) and electrical analysis of the oxide and SiC surface reveals that the Boron has not diffused into the SiC. This is most probably due to the high concentration of Nitrogen at the interface generated during the N2O oxidation.

High Mobility a-Si:H TFT Fabricated by Hot Wire Chemical Vapor Deposition

2010 ◽  
Vol 1245 ◽  
Author(s):  
Chun-Yuan Hsueh ◽  
Chieh-Hung Yang ◽  
Si-Chen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
High Mobility ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Hot Wire ◽  
Low Threshold ◽  
Hydrogenated Amorphous ◽  
Very High

AbstractThe hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) having a very high field-effect mobility of 1.76 cm2/V-s and a low threshold voltage of 2.43 V have been fabricated successfully using the hot wire chemical vapor deposition (HWCVD).

scholarly journals Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors

2017 ◽  
Vol 29 (36) ◽  
pp. 1702523 ◽  
Author(s):  
Hu Chen ◽  
Michael Hurhangee ◽  
Mark Nikolka ◽  
Weimin Zhang ◽  
Mindaugas Kirkus ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Semiconducting Polymers ◽  
Very High

Nanocrystalline Silicon TFTs With 50 nm Thick Deposited Channel Layer, 10 cm2/Vs Electron Mobility and 108 On/Off Current Ratio

2001 ◽  
Vol 664 ◽  
Author(s):  
Robert B. Min ◽  
Sigurd Wagner
Keyword(s):  
Field Effect ◽  
High Mobility ◽  
Nanocrystalline Silicon ◽  
Channel Length ◽  
High Electron ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Gate Structure ◽  
Electron Field ◽  
Top Gate Structure

ABSTRACTThin film transistors were made using 50 nm thick directly deposited nanocrystalline silicon channel layers. The transistors have coplanar top gate structure. The nanocrystalline silicon was deposited from discharges in silane, hydrogen and silicon tetrafluoride. The transistors combine a high electron field effect mobility of ∼ 10 cm2/Vs with a low “off” current of ∼ 10−14 A per µm of channel length, and an “on”/“off” current ratio of ∼ 108. This result shows that directly deposited silicon can combine high mobility with low “off” currents.

All-Semiconducting Nanotube Networks: Towards High Performance Printed Nanoelectronics

2011 ◽  
Vol 1283 ◽  
Author(s):  
N. Rouhi ◽  
D. Jain ◽  
K. Zand ◽  
P. J. Burke
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Critical Issue ◽  
Channel Length ◽  
Junction Resistance ◽  
Semiconducting Nanotubes ◽  
Ink Formulation

ABSTRACTIn this work, we present progress towards devices fabrication using all semiconducting nanotubes as the starting material. Individual nanotubes are known to have intrinsic mobility of more than 10,000 cm2/V-s but using a network of nanotubes will decrease this mobility because of tube-tube screening effect and junction resistance. Here we are using solution-based deposition of purified 99% semiconducting single-walled nanotubes as the channel in field effect transistors. DC analysis of devices’ characterization shows a high mobility, more than 50 cm2/Vs, and good on/off ratio in the range of more than 103 and 104. A critical issue is the ink formulation and dependence of electronic properties on the nanotube density after deposition. In addition, the channel length also plays an important role in controlling both mobility and on/off ratio.

Ground water quality of selected areas of Punjab and Sind Provinces, Pakistan: Chemical and microbiological aspects

2019 ◽  
Author(s):  
Chem Int
Keyword(s):  
Ionic Concentration ◽  
Chloride Ions ◽  
Potassium Ions ◽  
Ammonium Ions ◽  
High Concentration ◽  
Phosphate Ions ◽  
Sodium Magnesium ◽  
Very High ◽  
Microbiological Aspects

The assessment of groundwater is essential for the estimation of suitability of water for safe use. An attempt has been made to study the groundwater of selected areas of Punjab (Sheikhupura & Sahiwal) and Sindh (Sindh, Jawar Dharki and Dharki), Pakistan. The results indicate that pH, color and odor were all within limits of WHO that is pH ranges 6.5–8.5, colorless and odorless, respectively. The high values of suspended solids were observed in the Sindh-1 and Dharki samples. Microbiologically only Sahiwal and Jawar Dharki were found fit for drinking purpose. Trace metals analysis of Sheikhupura-1 and Sindh-1 showed that values do not fall within limits of WHO for Iron. The ionic concentration analysis showed that high bicarbonate (HCO3-), ions are present in the samples of Sahiwal and Dharki; Sindh-1 and Jawar Dharki samples showed very high concentration for chloride ions, all samples were satisfactory level for sulphate (SO42-), sodium, magnesium and phosphate ions except samples of Sindh-1 and Jawar Dharki. High concentration of calcium and potassium ions was observed in samples of Sindh-1, while all other samples were found fit for drinking purposes in respect of nitrate, nitrite and ammonium ions. The high concentration of Fluoride was found only in Sheikhupura-2 samples.

scholarly journals Near quantitative synthesis of urea macrocycles enabled by bulky N-substituent

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yingfeng Yang ◽  
Hanze Ying ◽  
Zhixia Li ◽  
Jiang Wang ◽  
Yingying Chen ◽  
...  
Keyword(s):  
High Efficiency ◽  
Molecular Structures ◽  
High Yield ◽  
Kinetic Control ◽  
High Concentration ◽  
Weak Association ◽  
Quantitative Synthesis ◽  
Thermodynamic Stabilization ◽  
Discrete Structures ◽  
Very High

AbstractMacrocycles are unique molecular structures extensively used in the design of catalysts, therapeutics and supramolecular assemblies. Among all reactions reported to date, systems that can produce macrocycles in high yield under high reaction concentrations are rare. Here we report the use of dynamic hindered urea bond (HUB) for the construction of urea macrocycles with very high efficiency. Mixing of equal molar diisocyanate and hindered diamine leads to formation of macrocycles with discrete structures in nearly quantitative yields under high concentration of reactants. The bulky N-tert-butyl plays key roles to facilitate the formation of macrocycles, providing not only the kinetic control due to the formation of the cyclization-promoting cis C = O/tert-butyl conformation, but also possibly the thermodynamic stabilization of macrocycles with weak association interactions. The bulky N-tert-butyl can be readily removed by acid to eliminate the dynamicity of HUB and stabilize the macrocycle structures.

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

Small-volume vitrification and rapid warming yield high survivals of one-cell rat embryos in cryotubes

2021 ◽  
Author(s):  
Yasuyoshi Fukuda ◽  
Misako Higashiya ◽  
Takahiro Obata ◽  
Keita Basaki ◽  
Megumi Yano ◽  
...  
Keyword(s):  
Cooling Rate ◽  
Small Volume ◽  
Sucrose Solution ◽  
High Concentration ◽  
Rat Embryos ◽  
Low Concentrations ◽  
Intracellular Ice Formation ◽  
Intracellular Ice ◽  
Warming Rate ◽  
Very High

Abstract To cryopreserve cells, it is essential to avoid intracellular ice formation during cooling and warming. One way to achieve this is to convert the water inside the cells into a non-crystalline glass. It is currently believed that to accomplish this vitrification, the cells must be suspended in a very high concentration (20–40%) of a glass-inducing solute, and subsequently cooled very rapidly. Herein, we report that this belief is erroneous with respect to the vitrification of one-cell rat embryos. In the present study, one-cell rat embryos were vitrified with 5 μL of EFS10 (a mixture of 10% ethylene glycol, 27% Ficoll, and 0.45 M sucrose) in cryotubes at a moderate cooling rate, and warmed at various rates. Survival was assessed according to the ability of the cells to develop into blastocysts and to develop to term. When embryos were vitrified at a 2,613 °C/min cooling rate and thawed by adding 1 mL of sucrose solution (0.3 M, 50 °C) at a warming rate of 18,467 °C/min, 58.1 ± 3.5% of the EFS10-vitrified embryos developed into blastocysts, and 50.0 ± 4.7% developed to term. These rates were similar to those of non-treated intact embryos. Using a conventional cryotube, we achieved developmental capabilities in one-cell rat embryos by rapid warming that were comparable to those of intact embryos, even using low concentrations (10%) of cell-permeating cryoprotectant and at low cooling rates.

High mobility BaSnO3 films and field effect transistors on non-perovskite MgO substrate

2016 ◽  
Vol 109 (26) ◽  
pp. 262102 ◽  
Author(s):  
Juyeon Shin ◽  
Young Mo Kim ◽  
Youjung Kim ◽  
Chulkwon Park ◽  
Kookrin Char
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Mgo Substrate

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

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