Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation

2019 ◽  
Vol 963 ◽  
pp. 827-831 ◽  
Author(s):  
Matthaeus Albrecht ◽  
Tobias Erlbacher ◽  
Anton Bauer ◽  
Lothar Frey
Keyword(s):  
Power Supply ◽  
Propagation Delay ◽  
Logic Circuits ◽  
Implantation Dose ◽  
Channel Mobility ◽  
Propagation Delay Time ◽  
The Impact ◽  
Channel Properties ◽  
Input Level ◽  
Effective Channel

In this work, the impact of a shallow aluminum channel implantation on the channel properties of SiC p-MOSFETs and digital SiC CMOS devices is investigated. For this purpose, p-MOSFETs, CMOS inverters and ring oscillators with different channel implantation doses were fabricated and electrically characterized. The threshold voltage of the resulting p-MOSFETs was shifted from-5 V to-3.6 V whereas the effective channel mobility was slightly decreased from 11.8 cm2/Vs to 10.2 cm2/Vs for a p-MOSFET channel implantation dose of 2∙1013 cm-2 compared to the non-implanted channel. The resulting p-MOSFETs enable SiC CMOS logic circuits to operate with a 5 V power supply and to satisfy 5 V TTL input level specification over the whole temperature range of 25°C to 400°C. Furthermore the propagation delay time of inverters was reduced by 80% at 25°C and 40% at 400°C compared to inverters without p-MOSFET channel implantation.

Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs

2016 ◽  
Vol 858 ◽  
pp. 821-824 ◽  
Author(s):  
Matthaeus Albrecht ◽  
Tobias Erlbacher ◽  
Anton J. Bauer ◽  
Lothar Frey
Keyword(s):  
Threshold Voltage ◽  
Doping Concentration ◽  
Drain Current ◽  
Transfer Characteristic ◽  
Propagation Delay ◽  
Channel Mobility ◽  
Propagation Delay Time ◽  
Respective Field ◽  
Channel Lengths ◽  
The Impact

In this work, the impact of the n-well doping concentration on the channel mobility and threshold voltage of p-MOSFETs and their applications in CMOS-devices is evaluated. For this purpose lateral p-channel MOSFETs with different channel lengths (L = 800 μm, 10 μm, 5 μm, and 3 μm) and doping concentrations (ND = 1015 cm-3 and 8·1015 cm-3) were fabricated and the respective field-effect mobility was extracted from the transfer-characteristics. Comparable to n-MOSFETs the mobility of p-MOSFETs was found to be the highest for the lowest doping concentration in the channel and the absolute value of the threshold voltage increases with increasing doping concentration [4]. To investigate its suitability for CMOS applications, inverters with different doping concentrations for n-MOSFET (NA = 1015 cm-3 and 1017 cm-3) und p-MOSFET (ND = 1015 cm-3 and 8·1015 cm-3) were built. For logic levels of 0 V and 10 V, the voltage transfer characteristic with the highest input ranges was obtained for a low p-MOSFET and a high n-MOSFET doping concentration. The lowest propagation delay time could be achieved with a low p-MOSFET and a low n-MOSFET doping concentration. At room temperature as well as at high temperatures T = 573 K the drain current of p-MOSFETs with channel lengths below 3 μm is hampered by the series resistance of the source and drain region which limits the performance of CMOS devices.

scholarly journals Quaternary regenerative CMOS logic circuits with high-impedance output state

2005 ◽  
Vol 18 (3) ◽  
pp. 505-514
Author(s):  
Dusanka Bundalo ◽  
Branimir Ðordjevic ◽  
Zlatko Bundalo
Keyword(s):  
Computer Simulation ◽  
Computer Simulations ◽  
Delay Time ◽  
Propagation Delay ◽  
Logic Circuits ◽  
Output State ◽  
High Impedance ◽  
Multiple Valued Logic ◽  
Propagation Delay Time ◽  
Simulation Results

Principles and possibilities of synthesis and design of quaternary multiple valued regenerative CMOS logic circuits with high-impedance output state are de- scribed and proposed in the paper. Two principles of synthesis and implementation of CMOS regenerative quaternary multiple-valued logic circuits with high-impedance output state are proposed and described: the simple circuits with smaller number of transistors, and the buffer/driver circuits with decreased propagation delay time. The schemes of such logic circuits are given and analyzed by computer simulations. Some of computer simulation results confirming descriptions and conclusions are also given in the paper.

scholarly journals Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1150
Author(s):  
Yoanlys Hernandez ◽  
Bernhard Stampfer ◽  
Tibor Grasser ◽  
Michael Waltl
Keyword(s):  
Delay Time ◽  
Propagation Delay ◽  
Operating Conditions ◽  
Physical Models ◽  
Stable Operation ◽  
Reliability Models ◽  
Bias Temperature Instability ◽  
Propagation Delay Time ◽  
Aging Mechanisms ◽  
The Impact

All electronic devices, in this case, SiC MOS transistors, are exposed to aging mechanisms and variability issues, that can affect the performance and stable operation of circuits. To describe the behavior of the devices for circuit simulations, physical models which capture the degradation of the devices are required. Typically compact models based on closed-form mathematical expressions are often used for circuit analysis, however, such models are typically not very accurate. In this work, we make use of physical reliability models and apply them for aging simulations of pseudo-CMOS logic inverter circuits. The model employed is available via our reliability simulator Comphy and is calibrated to evaluate the impact of bias temperature instability (BTI) degradation phenomena on the inverter circuit’s performance made from commercial SiC power MOSFETs. Using Spice simulations, we extract the propagation delay time of inverter circuits, taking into account the threshold voltage drift of the transistors with stress time under DC and AC operating conditions. To achieve the highest level of accuracy for our evaluation we also consider the recovery of the devices during low bias phases of AC signals, which is often neglected in existing approaches. Based on the propagation delay time distribution, the importance of a suitable physical defect model to precisely analyze the circuit operation is discussed in this work too.

Impact of Channel Mobility Improvement Using Boron Diffusion on Different Power MOSFETs Voltage Classes

2017 ◽  
Vol 897 ◽  
pp. 537-540
Author(s):  
Victor Soler ◽  
Maria Cabello ◽  
Maxime Berthou ◽  
Josep Montserrat ◽  
José Rebollo ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Pin Diode ◽  
Boron Diffusion ◽  
Oxide Formation ◽  
Interface Quality ◽  
Channel Mobility ◽  
Power Mosfets ◽  
The Impact ◽  
Effective Channel ◽  
Drift Layer

SiC planar VDMOS of three voltages ratings (1.7kV, 3.3kV and 4.5kV) have been fabricated using a Boron diffusion process into the thermal gate oxide for improving the SiO2/SiC interface quality. Experimental results show a remarkable increase of the effective channel mobility which increases the device current capability, especially at room temperatures. At high temperatures, the impact of the Boron treatment is lower since the major contribution of the drift layer to the on-resistance. In addition, the intrinsic body diode characteristics approximate to that of an ideal PiN diode, and the blocking capability is not compromised by the use of Boron for the gate oxide formation.

scholarly journals Multiple-valued cmos logic circuits with high-impedance output state

2002 ◽  
Vol 15 (3) ◽  
pp. 371-383 ◽  
Author(s):  
Dusanka Bundalo ◽  
Zlatko Bundalo ◽  
Branimir Djordjevic
Keyword(s):  
Computer Simulation ◽  
Propagation Delay ◽  
Logic Circuits ◽  
Interface Circuits ◽  
Output State ◽  
High Impedance ◽  
Multiple Valued Logic ◽  
Propagation Delay Time ◽  
Simulation Results ◽  
Logic Systems

Principles and possibilities of synthesis and design of bus interface circuits with high-impedance output state in multiple-valued logic systems are described and proposed in the paper. The general principles for implementation of such circuits are considered first. Then the methods for synthesis and design of logic circuits with high-impedance output state in multiple-valued CMOS logic systems with any logic basis are proposed and described. Two principles of synthesis and implementation of CMOS multiple-valued logic circuits with high-impedance output state are proposed and described: the simple circuits with smaller number of transistors, and the buffer/driver circuits with decreased propagation delay time. As an example, the schemes of such CMOS multiple-valued logic circuits with the logic basis of 5 (quaternary multiple-valued logic circuits) are given and analyzed by computer simulations. Some of computer simulation results confirming descriptions and conclusions are also given in the paper.

scholarly journals Uninterruptible Power Supply Improves Precision and External Validity of Telomere Length Measurement via qPCR

2020 ◽  
Vol 1 ◽  
Author(s):  
Waylon J. Hastings ◽  
Dan T.A. Eisenberg ◽  
Idan Shalev
Keyword(s):  
Telomere Length ◽  
Power Supply ◽  
External Validity ◽  
High Performance ◽  
Epidemiological Studies ◽  
Storage Conditions ◽  
Amplification Efficiency ◽  
Uninterruptible Power Supply ◽  
Uninterruptible Power ◽  
The Impact

Abstract Technical challenges associated with telomere length (TL) measurements have prompted concerns regarding their utility as a biomarker of aging. Several factors influence TL assessment via qPCR, the most common measurement method in epidemiological studies, including storage conditions and DNA extraction method. Here, we tested the impact of power supply during the qPCR assay. Momentary fluctuations in power can affect the functioning of high-performance electronics, including real-time thermocyclers. We investigated if mitigating these fluctuations by using an uninterruptible power supply (UPS) influenced TL assessment via qPCR. Samples run with a UPS had significantly lower standard deviation (p < 0.001) and coefficient of variation (p < 0.001) across technical replicates than those run without a UPS. UPS usage also improved exponential amplification efficiency at the replicate, sample, and plate levels. Together these improvements translated to increased performance across metrics of external validity including correlation with age, within-person correlation across tissues, and correlation between parents and offspring.

scholarly journals The Utilization of Digital Platforms for Marketing in the Nigerian Entertainment and Media (E&M) Industry: Prospects and Challenges

2018 ◽  
Vol 5 (1) ◽  
pp. 60
Author(s):  
Nelson Obinna Omenugha
Keyword(s):  
Power Supply ◽  
Global Perspective ◽  
The Internet ◽  
National Bureau ◽  
Network Infrastructure ◽  
Digital Platforms ◽  
The Government ◽  
Analogue To Digital ◽  
Economic Need ◽  
The Impact

The National Bureau of Statistics recently announced that the entertainment and media (E&M) industry in Nigeria recorded growth of 1.86% to 12.81%; contributing N54bn to the country’s GDP. The industry’s revenue is projected to reach an estimated $8.5bn in 2018, from $4bn in 2013, with internet as one of the key drivers (PwC report, 2016, p.14). This comes at a time when Nigeria’s economy has shrunk by 2.24% since 2015 and receded by 0.18% from the previous quarter. Therefore, this study unpacks the possibilities and challenges of the impact of e-marketing tools on the growth of the Nigerian E&M industry. E-marketing tools provide “a unique combination of powerful capabilities for marketers” (Parsons et al., 2015). E-marketing suitability for the E&M industry lies in its lower capital demand, and a convenient and online means of disseminating marketing messages across a heterogeneous population at an unlimited geographical space. E-marketing is a reality in Nigeria as a study by Mathew, Ogedebe & Ogedebe (2013, p. 549) shows that “Many Nigerians who used (sic) the internet as one form of communication or another are bombarded daily with advertisements of products and services from industries in the country.” This reality has brought a shift from mechanical to electronic and from analogue to digital; ultimately impacting the marketing realms. The internet enables these electronic/digital platforms; which marketers (E&M industry) and customers (content consumers) rely on to effectively reach and receive communication content and feedback respectively.  However, this study examined the challenges that have possibly hindered the full realization of the e-marketing tools of the Nigerian E&M industry and noted among others; poor power supply and unreliable network infrastructure in the country. There is also an increased customer expectation, security, content copyright and privacy issues as well as the challenge of compliance demand in the industry as influenced by ever dynamic digital boundaries. There is a huge economic need for the Nigerian government to live up to its obligation and enhance power supply and boost network infrastructure. The Nigerian E&M industry needs to continually integrate different digital platforms to reach targets and attract more content consumers. Both the government and industry should increasingly learn and bring a global perspective that can help the nation adapt to the constantly changing digital environment.

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