Optimization of Cupric Chloride Subtractive Etching for Cu High Density Interconnects

2018 ◽  
Vol 2018 (1) ◽  
pp. 000640-000646 ◽  
Author(s):  
Alexander Lambert ◽  
Goutham Issac ◽  
Ashish Salunke ◽  
Luwen Lu ◽  
Oliver Chyan
Keyword(s):  
Etch Rate ◽  
Printed Circuit Boards ◽  
Underlying Mechanism ◽  
Cupric Chloride ◽  
Current Standard ◽  
Engineering Controls ◽  
Monitoring Strategies ◽  
Vis Spectroscopy ◽  
Current Monitoring ◽  
Etch Profile

Abstract The continuously increasing demand for innovation in the miniaturization of microelectronics has driven the need for ever more precise fabrication strategies for device packaging, especially for printed circuit boards (PCBs). Subtractive copper etching is a fundamental step in this processes, requiring very precise control of etch rate and etch profile. Cu etching baths are typically monitored with several parameters including oxidation-reduction potential, conductivity, and specific gravity. However, the etch rate and etch profile can be difficult to control even under strict engineering controls of those monitoring parameters. The mechanism of acidic cupric chloride etching, regeneration and recovery is complex, and the current monitoring strategies can have difficulty controlling the complex interlocking chemical equilibria. We report that thin-film UV-Vis spectroscopy has the capability to effectively monitor the complex changes to the etch bath. UV-Vis also reveals various underlying mechanism reasons for etch bath behavior and illuminates the roles of H+ and Cl− to the etch bath while also providing a means to monitor the Cl−. Furthermore, UV-Vis can be utilized to improve current monitoring strategies, as it can identify and predict etching behavior that the current standard methodologies may have difficulty predicting.

scholarly journals Need for establishing integrated programs to monitor endocrine active compounds

2003 ◽  
Vol 75 (11-12) ◽  
pp. 2435-2444 ◽  
Author(s):  
H. Segner
Keyword(s):  
Weight Of Evidence ◽  
Reproductive Disorders ◽  
Integrated Monitoring ◽  
Active Compounds ◽  
Monitoring Programs ◽  
Monitoring Strategies ◽  
Effect Monitoring ◽  
Integrated Programs ◽  
Basic Biology ◽  
Current Monitoring

Environmental monitoring programs on endocrine active compounds (EACs) have been used to document the level of exposure and to assess the possible association to the occurrence of developmental and reproductive disorders in wildlife. The establishment of causal links between exposure and effect data, however, was found to be difficult due to, for example, the presence of confounding factors or limited understanding of EAC mechanisms and interactions, but also because of conceptual and methodological limitations of current monitoring strategies. In order to provide plausibility of an EAC etiology for a developmental or reproductive alteration in a wildlife population, integrated monitoring programs are needed that will use a combination of complementary approaches: methods for a targeted search for suspected EACs in an environmental mixture, analysis of internal EAC doses instead of external EAC concentrations, utilization of mechanism-based end-points in bioanalytical and effect monitoring, investigation of the basic biology and physiology of wildlife sentinel species, laboratory replication of field effects, as well as consideration of epidemiological and weight-of-evidence criteria in the design and data evaluation of monitoring programs.

Dry Etching of PZT Films in an Ecr Plasma

1993 ◽  
Vol 310 ◽  
Author(s):  
Barbara Charlet ◽  
Kerrie E. Davies
Keyword(s):  
Surface Roughness ◽  
High Temperature ◽  
Low Temperature ◽  
Bias Voltage ◽  
Etch Rate ◽  
Effect Of Temperature ◽  
Ecr Plasma ◽  
Microwave Reactor ◽  
Pzt Films ◽  
Etch Profile

AbstractPZT films were etched in an ECR microwave reactor with RF polarization.The etch rate was evaluated using various gas mixtures including combinations of two of the following: C12, NF3, SF6 and HBr. The etch rate was measured as a function of the percentage of one gas in the mixture. Other parameters investigated included gas pressure, bias voltage on the electrode and substrate temperature.Results of the effect of temperature show that etch rates are higher on high temperature substrates than on low temperature substrates. A mixture of C12 and SF2 provided a PZT etch rate of 750 Å / min on a substrate, at approximately 100 °C. We evaluated the resultant etch profile and surface roughness

scholarly journals Optimizing Trap Characteristics to Monitor the Leaffooted Bug Leptoglossus zonatus (Heteroptera: Coreidae) in Orchards

Insects ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 358
Author(s):  
Houston Wilson ◽  
Jessica Maccaro ◽  
Kent Daane
Keyword(s):  
Monitoring System ◽  
Crop Yield ◽  
Surface Texture ◽  
Tree Canopy ◽  
Subsequent Work ◽  
Yield And Quality ◽  
Economic Thresholds ◽  
Monitoring Strategies ◽  
Yellow Traps ◽  
Current Monitoring

The leaffooted bug, Leptoglossus zonatus (Heteroptera: Coreidae), has become a key pest of almonds, pistachios, and pomegranates in California. Adults and nymphs directly feed on nuts and fruits, which reduces crop yield and quality and can facilitate pathogen infections. Current monitoring strategies require growers to actively sample the tree canopy, with no economic thresholds being developed for this pest. To improve monitoring of L. zonatus, a three-year study was conducted to identify an optimal trap. A hanging cross-vane panel trap was identified as the best trap type in Year 1, and subsequent work in Years 1–3 focused on refining its use by modifying surface texture and color. Results indicated that coating trap surfaces with the lubricant fluon improved trap catching ability, and adults were most frequently recovered in yellow traps. A hanging cross-vane panel trap with these features could serve as the basis for the development of a new monitoring system for this pest in orchards, which could be improved further if semiochemical lures will be developed.

Dry Etching Issues in the Integration of Ferroelectric Thin Film Capacitors

1996 ◽  
Vol 433 ◽  
Author(s):  
G. E. Menk ◽  
S. B. Desu ◽  
W. Pan ◽  
D. P. Vijay
Keyword(s):  
Thin Film ◽  
Etch Rate ◽  
Large Scale ◽  
Random Access ◽  
Ferroelectric Thin Film ◽  
Underlying Mechanism ◽  
Dry Etching ◽  
Fatigue Properties ◽  
Thin Film Capacitors ◽  
Etch Rates

AbstractDry etching is an area that demands a great deal of attention in the large scale integration of ferroelectric thin film capacitors for nonvolatile random access memory applications. In this review, we discuss some of the issues relating to the etching of the ferroelectric films, patterning of the electrodes, device damage caused by the etch process and post-etch residue problems. An etch process that can provide high etch rates and good etch anisotropy for the current candidate ferroelectrics including Pb(Zr, Ti)O3 and layered structure SrBi2Ta2O9 thin films using environmentally benign gases such as hydrochlorofluorocarbons is presented. The etch mechanism for both of these materials was determined to rely substantially on ion bombardment effects. For example, PZT films were etched anisotropically at rates of up to 60 nm/min using CHCIFCF3 gas under high rf power and low gas pressure conditions. Problems remain with respect to the acrosswafer differential etch rates observed when more than one phase is present in the material (e.g., amorphous/pyrochlore + perovskite phases in PZT). Damage caused by the etch process which can lead to changes in device characteristics, including hysteresis and fatigue properties, and the underlying mechanism that causes the damage are discussed. O2 was found to be a suitable etch gas for etching the conductive oxide electrode material RuO2. However, an anomaly in the etch rate was detected upon introduction of a small amount of fluorine containing gas: addition of 2% of CF3CFH2 gas to the O2 plasma increases the etch rate by a factor of four. This can be taken advantage of in obtaining high etch selectivity between the electrode and ferroelectric layers.

scholarly journals Recommendations for Haemodynamic and Neurological Monitoring in Repair of Acute Type A Aortic Dissection

2011 ◽  
Vol 2011 ◽  
pp. 1-14 ◽  
Author(s):  
Deborah K. Harrington ◽  
Aaron M. Ranasinghe ◽  
Anwar Shah ◽  
Tessa Oelofse ◽  
Robert S. Bonser
Keyword(s):  
Aortic Dissection ◽  
Type A ◽  
Review Article ◽  
Experimental Techniques ◽  
Acute Type ◽  
Current Standard ◽  
Type A Aortic Dissection ◽  
Monitoring Strategies ◽  
Complex Patients ◽  
Cerebral Malperfusion

During treatment of acute type A aortic dissection there is potential for both pre- and intra-operative malperfusion. There are a number of monitoring strategies that may allow for earlier detection of potentially catastrophic malperfusion (particularly cerebral malperfusion) phenomena available for the anaesthetist and surgeon. This review article sets out to discuss the benefits of the current standard monitoring techniques available as well as desirable/experimental techniques which may serve as adjuncts in the monitoring of these complex patients.

Investigation of Gaas Deep Etching by Using Reactive Ion Etching Technique

1991 ◽  
Vol 240 ◽  
Author(s):  
Kuen-Sane Din ◽  
Gou-Chung Chi
Keyword(s):  
Etch Rate ◽  
Etch Depth ◽  
Etching Technique ◽  
Deep Etching ◽  
Plasma Resistance ◽  
Initial Stage ◽  
Long Time ◽  
Critical Requirement ◽  
Inducing Surface ◽  
Etch Profile

ABSTRACTRIE is an important technique in obtaining anisotropie etch profile. This is a critical requirement for very deep etching which needs long etch duration. Among many factors which affect RIE characteristics in deep etching, the following are most concerned: (1) the etch mask: needs suitable plasma resistance without significant plasma attack for extended etch time; (2) Long time stability in etch rate and surface conditions for the sample; (3) Etch profile: should be anisotropie with tolerable undercut In this work, CCl2F2 and SiCl4 were used with CCl2F2 as the main etchant. Ar was used in the initial stage for sputtering away surface residues prior to actual etching was performed. Three types of etch masks were prepared and their performance such as plasma was investigated. Multilayer metal etch mask has very low etch rate in plasma and its etch rate selectivity is around 300. The etch selectivities of GaAs to Si3N4 and to photoresist are 35 and 23, respectively. Etch mask can be chosen depending on the thickness of etch mask and the required GaAs etch depth. The etch rate of GaAs was found significantly increased when metal mask was applied. While PR mask is easier for inducing surface coating.

Characterization of Films Formed during the Corrosion of Copper in Dilute Solutions of Cupric Chloride

1995 ◽  
Vol 390 ◽  
Author(s):  
L. H. Walsh ◽  
N. B. Feilchenfeld
Keyword(s):  
Grain Size ◽  
Etch Rate ◽  
Reaction Rate ◽  
Surface Film ◽  
Reaction Rates ◽  
Cupric Chloride ◽  
Copper Corrosion ◽  
Near Surface ◽  
Microelectronics Industry

ABSTRACTMicrostructural differences in copper deposited by four techniques commonly used in the microelectronics industry were previously reported. Grain size, preferred orientation, and near surface chemistry were considered. [1] Prediction of the reaction rates were made based on these differences and then correlated with actual measurements. [2] In aerobic conditions the grain size dictated the reaction rate, the smaller the size the faster the rate.[3] The composition of the surface film formed during etching was examined. The trends in chemical concentrations on the surface film vary for each sample, but the relative constituent amounts correlate to the grain size of the original copper samples. Thus, there is further evidence that during exposure to aqueous solutions of cupric chloride, copper corrosion, in terms of both etch rate and film composition, is dictated by grain size of the original copper and not other microstructural factors.

Development of Multiple-Step SOI DRIE Process for Superior Notch Reduction at Buried Oxide

2011 ◽  
Vol 254 ◽  
pp. 148-151
Author(s):  
Praveen Kumar Sampath ◽  
Muhamad Khairi Bin Safari ◽  
Lee Kian Ng ◽  
Ranganathan Nagarajan
Keyword(s):  
Etch Rate ◽  
Etch Depth ◽  
Buried Oxide ◽  
High Etch Rate ◽  
Etch Profile ◽  
Multiple Step

A novel two step etch process using the Bosch-etch mechanism to prevent notching on an SOI wafer is presented. The first etch step is used to attain the maximum etch depth with high etch rate and stop before the buried oxide (BOX). Followed by the second etch step with lower etch rate and tuned to soft land on the BOX to etch the remaining depth. In addition to that it is tailored to also provide a tapered etch profile which is beneficial in reducing the notch if over etching occurs.

scholarly journals Magnolol Induces the Extrinsic/Intrinsic Apoptosis Pathways and Inhibits STAT3 Signaling-Mediated Invasion of Glioblastoma Cells

Life ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1399
Author(s):  
Po-Fu Yueh ◽  
Yuan-Hao Lee ◽  
Chun-Yu Fu ◽  
Chun-Bin Tung ◽  
Fei-Ting Hsu ◽  
...  
Keyword(s):  
Nuclear Translocation ◽  
Underlying Mechanism ◽  
Intrinsic Apoptosis ◽  
Current Standard ◽  
Migration Ability ◽  
Invasion And Migration ◽  
Anticancer Properties ◽  
Stat3 Signaling ◽  
Apoptosis Pathways ◽  
And Migration

Glioblastoma multiforme (GBM) is the most common form of malignant brain tumor, with poor prognosis; the efficacy of current standard therapy for GBM remains unsatisfactory. Magnolol, an herbal medicine from Magnolia officinalis, exhibited anticancer properties against many types of cancers. However, whether magnolol suppresses GBM progression as well as its underlying mechanism awaits further investigation. In this study, we used the MTT (3-(4,5-Dimethylthiazol-2-yl)-2,5-Diphenyltetrazolium Bromide) assay, apoptosis marker analysis, transwell invasion and wound-healing assays to identify the effects of magnolol on GBM cells. We also validated the potential targets of magnolol on GBM with the GEPIA (Gene Expression Profiling Interactive Analysis) and Western blotting assay. Magnolol was found to trigger cytotoxicity and activate extrinsic/intrinsic apoptosis pathways in GBM cells. Both caspase-8 and caspase-9 were activated by magnolol. In addition, GEPIA data indicated the PKCδ (Protein kinase C delta)/STAT3 (Signal transducer and activator of transcription 3) signaling pathway as a potential target of GBM. Magnolol effectively suppressed the phosphorylation and nuclear translocation of STAT3 in GBM cells. Meanwhile, tumor invasion and migration ability and the associated genes, including MMP-9 (Matrix metalloproteinase-9) and uPA (Urokinase-type plasminogen activator), were all diminished by treatment with magnolol. Taken together, our results suggest that magnolol-induced anti-GBM effect may be associated with the inactivation of PKCδ/STAT3 signaling transduction.

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