Low Profile and Large Size WLCSP in IoT Applications

2019 ◽  
Vol 2019 (1) ◽  
pp. 000327-000332
Author(s):  
Tom Tang ◽  
Kuei Hsiao Kuo ◽  
Victor Lin ◽  
Kelly Chen ◽  
J.Y. Chen ◽  
...  
Keyword(s):  
High Performance ◽  
Wafer Level ◽  
Joint Reliability ◽  
Large Size ◽  
Low Profile ◽  
Chip Scale Package ◽  
Iot Devices ◽  
Small Form Factor ◽  
Board Level ◽  
Board Level Reliability

Abstract Recently, Wafer Level Chip Scale Package (WLCSP) Package is being rapidly adopted in Internet of Things (IoT) and consumer mobile electronics due to its low profile, small form factor and relatively easy assembly process. WLCSP with large die size becomes the trend in fulfilling high performance product demands. However, the solder joint reliability performances of WLCSP is the key challenge and becomes critical as increasing die size, especially the size is larger than 6 × 6 mm2. There is also growing interest in low profile WLCSP packages to less than 300 microns, especially when they are placed in a limited space inside IoT devices. Thin wafers are fragile and must be supported over their full dimensions to prevent cracking and breakage. An increasingly popular approach to thin wafer handling involves grinding and taping thin wafers with in-line machines. A specific carry tape have been also developed for transferring thin wafers after thinning. In this paper, WLCSP board level reliability for both large die size and low profile was studied, a test vehicle used for the large WLCSP package testing has 350um ball pitch and fully populated array. In addition to board level reliability test simulation and data collection, processing challenges were discussed, as well as processing solutions for thin wafer handling.

Board Level Reliability Enhancement for A Double-bump Wafer Level Chip Scale Package

2004 ◽  
Vol 1 (2) ◽  
pp. 64-71 ◽  
Author(s):  
Xiaowu Zhang ◽  
E. H. Wong ◽  
Mahadevan K. Iyer
Keyword(s):  
Solder Joint ◽  
Design Guidelines ◽  
Wafer Level ◽  
Element Analysis ◽  
Chip Scale Package ◽  
Form Design ◽  
Parametric Studies ◽  
Reliability Enhancement ◽  
Board Level ◽  
Board Level Reliability

This paper presents a nonlinear finite element analysis on board level solder joint reliability enhancement of a double-bump wafer level chip scale package (CSP). A viscoplastic constitutive relation is adopted for the solders to account for its time and temperature dependence in thermal cycling. The fatigue life of solder joint is estimated by the modified Coffin-Manson equation, which has been verified by experimental results using one of the double-bump wafer level CSP packages as the test vehicle. A series of parametric studies were performed by changing the Sn/Ag inner bump size (UBM pad size and standoff height), the eutectic Sn/Pb external solder joint size (pad size and standoff height), pitch, die thickness, and the encapsulant thickness. The results obtained from the modeling are useful to form design guidelines for board level reliability enhancement of the wafer level CSP packages.

Package Qualification Envelope for 22FDX® Technology

2019 ◽  
Vol 2019 (1) ◽  
pp. 000169-000175
Author(s):  
Christian Klewer ◽  
Frank Kuechenmeister ◽  
Jens Paul ◽  
Dirk Breuer ◽  
Bjoern Boehme ◽  
...  
Keyword(s):  
Flip Chip ◽  
Silicon On Insulator ◽  
Wafer Level ◽  
Characterization Methods ◽  
Fully Depleted ◽  
Individual Market ◽  
The Individual ◽  
Key Aspects ◽  
Board Level ◽  
Board Level Reliability

Abstract This article describes the methodology used to derive the 22FDX® Fully-Depleted Silicon-On-Insulator (FDSOI) Chip Package Interaction (CPI) qualification envelope. In the first part it is discussed how the individual market segments influence the technology features and offerings, including BEOL stacks and package types. In the following, the criteria used for the selection of BEOL stacks, die and package sizes and the interconnect type for the qualification envelope are summarized and explained. The three CPI qualification stages and related characterization methods are presented. CPI test structures used in the envelope are reported and their placement on the technology qualification vehicles (TQV) is outlined on the basis of flip chip TQV. Finally, the paper presents the passing 22FDX® package and board level reliability results obtained for wire bond, flip chip, as well as wafer level fan-in and fan-out package technologies. Key aspects of the individual qualifications are reported.

SiP(System in Package) Solutions with Wafer Level Packaging Technology

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 002226-002253 ◽  
Author(s):  
In Soo Kang ◽  
Jong Heon (Jay) Kim
Keyword(s):  
Embedded System ◽  
High Performance ◽  
Low Cost ◽  
Wafer Level ◽  
Molding Compound ◽  
Wafer Level Packaging ◽  
Ic Packaging ◽  
Chip Size ◽  
Bonding Technology ◽  
Small Form Factor

In mobile application, the WLP technology has been developing to make whole package size almost same as chip size. However, the I/O per chip unit area has increased so that it gets difficult to realize ideal pad pitch for better reliability. Recently, to achieve the thin and small size, high performance and low cost semiconductor package, Embedding Die and Fanout Technologies have been suggested and developed based on wafer level processing. In this work, as a solution of system in package, wafer level embedded package and fanout technology will be reviewed. Firstly, Wafer level embedded System in Package (WL-eSiP) which has daughter chip (small chip) embedded inside mother chip (bigger chip) without any special substrate has been suggested and developed. To realize wafer level embedded system in package (WL-eSiP), wafer level based new processes like wafer level molding for underfilling and encapsulation by molding compound without any special substrate have been applied and developed, including high aspect ratio Cu bumping, mold thinning and chip-to-wafer flipchip bonding. Secondly, Fan-out Package is considered as alternative package structure which means merged package structure of WLCSP (wafer level chip size package) and PCB process. We can make IC packaging widen area for SIP(System in Package) or 3D package. In addition, TSV and IPD are key enabling technology to meet market demands because TSV interconnection can provide wider bandwidth and high transmission speed due to vertical one compared to wire bonding technology and IPD can provide higher performance, more area saving to be assembled and small form factor compared to discrete passive components.

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