scholarly journals Temperature Effect on Al/p-CuInS2/SnO2(F) Schottky Diodes

2019 ◽  
Vol 9 (5) ◽  
pp. 4695-4701
Author(s):  
T. Ben Nasrallah ◽  
D. Mahboub ◽  
M. Jemai ◽  
S. Belgacem
Keyword(s):  
Grain Boundaries ◽  
Barrier Height ◽  
Current Density ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Secondary Phases ◽  
Inhomogeneity Correction ◽  
Semiconductor Contacts ◽  
Contact Characteristic ◽  
Parallel Conductance

In this paper, Schottky diodes (SDs) obtained by evaporated thin films of aluminum on pulverized p-CuInS2/SnO2:F have been studied using J-V-T characteristics in a temperature range of 200-340K. These characteristics show that aluminum acts as a rectifier metal-semiconductor contact. Characteristic variables of the Al/p-CuInS2/SnO2:F junctions, such as the current density, the serial resistance, the parallel conductance, the Schottky barrier height (SBH), and the ideality factor of the SD were obtained by fitting the J-V-T data using the Lambert function. Data analysis was conducted with the use of MATLAB. Results showed that n is greater than 1, which could be explained by the existence of inhomogeneities due to the grain boundaries in CuInS2. Through this analysis, one can see a good agreement between experimental and modeled data. The study has shown that the main contribution in the current conduction in such heterostructures is the thermionic emission (TE) supported by the recombination of the carriers. The last phenomenon appears mainly in the grain boundaries, which contain both intrinsic and extrinsic defects (secondary phases, segregated oxygen). An investigation of the J-V-T characteristics according to TE theory has demonstrated that the current density and the SBH increase while serial resistance, parallel conductance decrease with an increase in temperature. After an SBH inhomogeneity correction, the modified Richardson constant and the mean barrier height were found to be 120AK-2cm-2 and 1.29eV respectively. This kind of behavior has been observed in many metal-semiconductor contacts.

Comparative Study of Temperature Dependent Barrier Heights of Pd/ZnO Schottky Diodes Grown along Zn- and O-Faces

2012 ◽  
Vol 510-511 ◽  
pp. 265-270 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
Adnan Ali ◽  
M.A. Hasan
Keyword(s):  
Barrier Height ◽  
Deep Level ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Growth Conditions ◽  
Distribution Model ◽  
Metal Contacts ◽  
Temperature Dependent ◽  
Barrier Heights ◽  
Two Samples

In this study, the effect of polar face on Schottky barrier diodes has been investigated. Two samples of ZnO were grown hydrothermally under similar growth conditions. The Palladium (Pd) metal contacts of area 0.78 mm2were fabricated on both faces and were studied comprehensively using DLS-83 Deep Level Spectrometer over temperature range of 160K330K. The current-voltage (IV) measurements revealed that the ideality factor n and barrier height ϕBwere strongly temperature dependent for both faces (Zn and O-face) of ZnO, indicating that the thermionic emission is not the dominant process, which showed the inhomogenity in the barrier heights of grown samples. This barrier height inhomogenity was explained by applying Gaussian distribution model. The extrapolation of the linear ϕapverses n plot to n = 1 has given a homogeneous barrier height of approximately 0.88±0.01 eV and 0.76±0.01 eV for Zn and O-faces respectively. ϕapversus 1/T plot was drawn to obtain the values of mean barrier height for Zn and O-face (0.88±0.01 eV, 0.76±0.01 eV) and standard deviation (δs) (0.015±0.001 V, 0.014±0.001 V) at zero bais respectively. The value of δsfor the Zn-face is larger than O-face, showing that inhomogenity in the barrier heights is more in the sample grown along Zn-face as compared to the sample grown along O-face.

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

2013 ◽  
Vol 313-314 ◽  
pp. 270-274
Author(s):  
M. Faisal ◽  
M. Asghar ◽  
Khalid Mahmood ◽  
Magnus Willander ◽  
O. Nur ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Doping Concentration ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

AN ASSESSMENT ON ELECTRICAL CHARACTERIZATION OF Ni/n-Si SCHOTTKY RECTIFIERS WITH AND WITHOUT Ta2O5 INTERFACIAL OXIDE LAYER

2019 ◽  
Vol 26 (10) ◽  
pp. 1950073 ◽  
Author(s):  
N. NANDA KUMAR REDDY ◽  
P. ANANDA ◽  
V. K. VERMA ◽  
K. RAHIM BAKASH
Keyword(s):  
Schottky Barrier ◽  
Oxide Layer ◽  
Barrier Height ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Thermionic Emission ◽  
Mis Structure ◽  
Schottky Barrier Diodes ◽  
Mis Structures

We have fabricated Ni/[Formula: see text]-Si metal–semiconductor (MS) and Ni/Ta2O5/[Formula: see text]-Si metal-insulator–semiconductor (MIS) Schottky barrier diodes at room temperature and studied their current density–voltage (J–V) and capacitance–voltage (C–V) characteristic properties. The forward bias J–V characteristics of the fabricated MS and MIS devices have been evaluated with the help of the thermionic emission (TE) mechanism. Schottky barrier height (SBH) values of 0.73 and 0.84[Formula: see text]eV and ideality factor values of 1.75 and 1.46 are extracted using J–V measurements for MS and MIS Schottky barrier diodes without and with Ta2O5 interfacial oxide layer, respectively. It was noted that the incorporation of Ta2O5 interfacial oxide layer enhanced the value of SBH for the MIS device because this oxide layer produced the substantial barrier between Ni and [Formula: see text]-Si and this obtained barrier height value is better than the conventional metal/[Formula: see text]-Si (MS) Schottky diodes. The rectification ratio (RR) calculated at [Formula: see text][Formula: see text]V for the MS structure is found to be [Formula: see text] and the MIS structure is found to be [Formula: see text]. Using Chung’s method, the series resistance ([Formula: see text]) values are calculated using [Formula: see text]/[Formula: see text] vs I plot and are found to be 21,603[Formula: see text][Formula: see text] for the Ni/[Formula: see text]-Si (MS) and 5489[Formula: see text][Formula: see text] for the Ni/Ta2O5/[Formula: see text]-Si (MIS) structures, respectively. In addition, [Formula: see text] vs [Formula: see text] plot has been utilized to evaluate the series resistance ([Formula: see text]) values and are found to be 14,064[Formula: see text][Formula: see text] for the Ni/[Formula: see text]-Si (MS) and 2236[Formula: see text][Formula: see text] for the Ni/Ta2O5/[Formula: see text]-Si (MIS) structures, respectively. In conclusion, by analyzing the experimental results, it is confirmed that the good quality performance is observed in Ni/Ta2O5/[Formula: see text]-Si (MIS) type SBD when compared to Ni/[Formula: see text]-Si (MS) type SBD and can be accredited to the intentionally formed thin Ta2O5 interfacial oxide layer between Nickel and [Formula: see text]-type Si.

scholarly journals Туннельный ток во встречных диодах Шоттки, образованных контактами между вырожденным GaN n-типа и металлом

2018 ◽  
Vol 52 (6) ◽  
pp. 630
Author(s):  
И.О. Майборода ◽  
Ю.В. Грищенко ◽  
И.С. Езубченко ◽  
И.С. Соколов ◽  
И.А. Черных ◽  
...  
Keyword(s):  
Barrier Height ◽  
Potential Barrier ◽  
Current Density ◽  
Contact Area ◽  
Electron Tunneling ◽  
Schottky Diodes ◽  
Nonlinear Behavior ◽  
Free Carrier ◽  
Potential Barrier Height ◽  
Potential Barriers

AbstractThe nonlinear behavior of the I – V characteristics of symmetric contacts between a metal and degenerate n -GaN, which form oppositely connected Schottky diodes, is investigated at free-carrier densities from 1.5 × 10^19 to 2.0 × 10^20 cm^–3 in GaN. It is demonstrated that, at an electron density of 2.0 × 10^20 cm^–3, the conductivity between metal (chromium) and GaN is implemented via electron tunneling and the resistivity of the Cr–GaN contact is 0.05 Ω mm. A method for determining the parameters of potential barriers from the I – V characteristics of symmetric opposite contacts is developed. The effect of pronounced nonuniformity of the current density and voltage distributions over the contact area at low contact resistivity is taken into account. The potential-barrier height for Cr– n ^+-GaN contacts is found to be 0.47 ± 0.04 eV.

Characterization of Metal/Si1-xGex/Si Diodes Fabricated by Cryogenic Processing

1995 ◽  
Vol 379 ◽  
Author(s):  
L. He ◽  
E. Li ◽  
Z.Q. Shi ◽  
R.L. Jiang ◽  
J. L. Liu ◽  
...  
Keyword(s):  
Barrier Height ◽  
Room Temperature ◽  
Conduction Mechanism ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Nitrogen Atmosphere ◽  
Thin Layers ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Cryogenic Processing

ABSTRACTSchottky diodes were fabricated by evaporating metal thin layers on p-Si1-xGex by cryogenic processing. The cryogenic processing, with substrate temperature cooled to as low as 77K (LT), has been successfully used to enhance metal/III-V semiconductor Schottky barrier height[1]. The electrical characteristics of the diodes were investigated by current-voltage (IV) and current-temperature (I-T) measurements. In order to study the effect of silicide formation on diode characteristics, furnace annealing was performed in nitrogen atmosphere at 450°C and 550°C, respectively. Two kinds of samples with gemanium composition x of 0.17 and 0.20 were used. The electrical characteristics showed the barrier height фB decreased with the increase of the gemanium composition. The annealing temperatures up till to 550°C did not affect the I-V characteristics at room temperature, however, the conduction mechanism showed obvious difference comparing to the as-deposited diodes by I-V-T analysis. For Pd as Schottky metal, very similar results were obtained for the LT as-deposited diodes and the ordinary room temperature (RT) deposited diodes after 550° annealing, they both showed thermionic emission dominated conduction mechanism.

scholarly journals I-VCharacteristics of PtxCo1−x(x= 0.2, 0.5, and 0.7) Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-6
Author(s):  
M. Erkovan ◽  
E. Şentürk ◽  
Y. Şahin ◽  
M. Okutan
Keyword(s):  
Thin Films ◽  
Barrier Height ◽  
Ideality Factor ◽  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Native Oxide ◽  
Analysis Technique ◽  
Current Voltage ◽  
P Type

Three different chemical ratios of PtxCo1−xthin films were grown on p-type native oxide Si (100) by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V) measurements of metal-semiconductor (MS) Schottky diodes were carried out at room temperature. From theI-Vanalysis of the samples, ideality factor (n), barrier height (ϕ), and contact resistance values were determined by using thermionic emission (TE) theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from theI-Vcharacteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.

Parameter Extraction from the Reverse I-V and C-V Characteristics of an Epitaxial p-InP/Au Schottky Diode

1993 ◽  
Vol 318 ◽  
Author(s):  
A. Singh ◽  
P. Cova ◽  
R. A. Masut
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Parameter Extraction ◽  
Interface Layer ◽  
Least Square ◽  
Reverse Bias Voltage ◽  
Zero Bias ◽  
Current Voltage

ABSTRACTEpitaxial p-InP/Au Schottky diodes were fabricated by evaporation of Au onto Zn doped epitaxial layers of InP grown by MOVPE, on a highly doped InP substrate. The reverse current-voltage (Ir-Vr) and 1 MHz capacitance-voltage (C-V) characteristics of the Au/p-InP diodes were measured in the temperature range 220-393 K. At all temperatures, soft reverse current-voltage characteristics were observed, which may be due to the decrease in the effective Schottky barrier height (øbr) with the increase of Vr. The voltage dependence of the reverse current was well described in terms of the interface layer thermionic emission (ITE) model which incorporates the effects of applied reverse voltage drop and the transmission coefficient across the interface layer and image force lowering of the barrier height into the thermionic emission theory. A self consistent iteration and least square fitting technique was used to obtain the zero bias barrier height (øbo) and interface layer capacitance (Ci) from the Ir-Vr data. Both, the Ir-Vr and the C-V data were analyzed under the assumption of reverse bias voltage independence of the charge trapped in the interface states, which was supported by our experimental data. The values of øbo obtained from the C-V measurements agreed well with those obtained from the Ir-Vr data for a value of 0.45 AK−2cm−2 for the effective Richardson constant (Aeff).

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