Study of the effects of both film thickness and annealing time on CuxSyOz thin films for the possibility of usage as solar control coatings

Iron oxide thin films were prepared by spin-coating a gel solution of iron(III) nitrate dissolved in 2-methoxyethanol and acetylacetone on glass and quartz substrates. The film thickness was adjusted by changing the spinning rate of the spin coater. Annealing was carried out between 300 °C to 600 °C to investigate the phases present in the films. Viscosity of the main solution was found as 0.0035 Pa·s by viscosity measurement. TGA/DTA analyses showed that heat treatment should be done between 330 &degC and 440 °C in order to produce maghemite thin films. SEM studies showed that single layer thickness of the films were between 65 and 80 nm. The structural characteristics were evaluated by changing the experimental parameters which are annealing temperature, annealing time and thickness of the films. From the X-ray diffraction analysis, maghemite formation was observed with decreasing annealing temperature, annealing time and film thickness. TEM results verified the presence of the maghemite phase by electron diffraction and selected area electron diffraction (SAED) methods. According to UV-Vis results transmittance of the films decreases with increasing annealing temperature.

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Effect of sputter deposited Zn precursor film thickness and annealing time on the properties of Cu2ZnSnS4 thin films deposited by sequential reactive sputtering of metal targets

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2016.05.012 ◽

2016 ◽

Vol 52 ◽

pp. 38-45 ◽

Cited By ~ 9

Author(s):

Om Pal Singh ◽

Nadarajah Muhunthan ◽

Kuldeep Singh Gour ◽

Rahul Parmar ◽

Manas Dalai ◽

...

Keyword(s):

Thin Films ◽

Film Thickness ◽

Annealing Time ◽

Reactive Sputtering ◽

Precursor Film ◽

Sputter Deposited

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Microstructural Rearrangement in PZT(52/48) Thin Film Prepared By Reactive Cosputtering on Pt on Si(100)

MRS Proceedings ◽

10.1557/proc-280-513 ◽

1992 ◽

Vol 280 ◽

Author(s):

Woong Kil Choo ◽

Kwang Young Kim ◽

Hyo Jin Kim ◽

Sung Tae Kim

Keyword(s):

Thin Film ◽

Thin Films ◽

Dielectric Constant ◽

Film Thickness ◽

Annealing Time ◽

Annealing Temperature ◽

Experimental Conditions ◽

Pzt Thin Films ◽

Pzt Films ◽

Cubic Structure

ABSTRACTThe experimental conditions which render the exact stoichiometry of PZT(52/48) thin films deposited on Pt thin film on Si(100) by reactive cosputtering have been investigated. As-deposited PZT is amorphous containing α-PbO2 microcrystallites. As annealing temperature increases, the amorphous PZT films crystallize into pyrochlore and perovskite with pseudo-cubic structure in sequence. The perovskite PZT annealed above 750 °C evolves into a phase of morphotropic phase boundary. In the perovskite PZT thin films, the leakage current increases with annealing time. Also, the dielectric constant increases with film thickness and annealing temperature, which is discussed in conjunction with PZT/Pt interfacial morphology.

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Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

MRS Proceedings ◽

10.1557/proc-536-275 ◽

1998 ◽

Vol 536 ◽

Author(s):

A. B. Pevtsov ◽

N. A. Feoktistov ◽

V. G. Golubev

Keyword(s):

Thin Films ◽

Film Thickness ◽

Percolation Theory ◽

Nanocrystalline Silicon ◽

Spatial Light Modulators ◽

Light Emitting ◽

Light Modulators ◽

Silicon Thin Films ◽

Longitudinal Conductivity ◽

Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

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Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽

10.3390/coatings11050510 ◽

2021 ◽

Vol 11 (5) ◽

pp. 510

Author(s):

Yongqiang Pan ◽

Huan Liu ◽

Zhuoman Wang ◽

Jinmei Jia ◽

Jijie Zhao

Keyword(s):

Thin Films ◽

Film Thickness ◽

Deposition Rate ◽

Optical Constant ◽

Photoelectron Spectroscopy ◽

Linear Array ◽

Chemical Vapor ◽

Rf Plasma ◽

X Ray ◽

Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

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Emergence and Evolution of Crystallization in TiO2 Thin Films: A Structural and Morphological Study

Nanomaterials ◽

10.3390/nano11061409 ◽

2021 ◽

Vol 11 (6) ◽

pp. 1409

Author(s):

Ofelia Durante ◽

Cinzia Di Giorgio ◽

Veronica Granata ◽

Joshua Neilson ◽

Rosalba Fittipaldi ◽

...

Keyword(s):

Thin Films ◽

Film Thickness ◽

Transition Metal Oxides ◽

Annealing Temperature ◽

Morphological Properties ◽

Degree Of Crystallinity ◽

Tio2 Thin Films ◽

Force Microscopy ◽

Heat Treated ◽

Complementary Techniques

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250–1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.

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Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽

10.3390/coatings11010023 ◽

2020 ◽

Vol 11 (1) ◽

pp. 23

Author(s):

Weiguang Zhang ◽

Jijun Li ◽

Yongming Xing ◽

Xiaomeng Nie ◽

Fengchao Lang ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Grain Size ◽

Integrated Circuits ◽

Film Thickness ◽

Depth Range ◽

Micro Electro Mechanical Systems ◽

Si Substrates ◽

Sio2 Thin Film ◽

Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

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