External Alignment Marks Technique for Front-to-Back Side Alignment Using Single-Side Mask Aligner

2017 ◽  
Vol 41 (6) ◽  
pp. 627-634 ◽  
Author(s):  
H. Abdollahi ◽  
F. Samaeifar ◽  
A. Afifi ◽  
M.R. Aliahmadi
2014 ◽  
Vol 27 ◽  
pp. 1-4
Author(s):  
S. Brabender ◽  
K. Kolander ◽  
K.T. Kallis ◽  
H.L. Fiedler

This work presents a cost-effective and simple possibility to outperform the potential of a standard single side mask aligner. The limited functionality is extended to the capability of back side alignment with minimal effort without additional knowledge and integration of new process technologies. The whole presented process flow performs without the necessity of additional equipment as infrared back side wafer alignment kits or additional etching processes or clamps and brackets. The result is a front to back side alignment process with satisfactory deviation.


2021 ◽  
Vol 2021 ◽  
pp. 1-14
Author(s):  
Liancheng Yin ◽  
Peiyi Yang ◽  
Keming Mao ◽  
Qian Liu

Remote sensing image scene classification is a hot research area for its wide applications. More recently, fusion-based methods attract much attention since they are considered to be an useful way for scene feature representation. This paper explores the fusion-based method for remote sensing image scene classification from another viewpoint. First, it is categorized as front side fusion mode, middle side fusion mode, and back side fusion mode. For each fusion mode, the related methods are introduced and described. Then, classification performances of the single side fusion mode and hybrid side fusion mode (combinations of single side fusion) are evaluated. Comprehensive experiments on UC Merced, WHU-RS19, and NWPU-RESISC45 datasets give the comparison result among various fusion methods. The performance comparisons of various modes, and interactions among different fusion modes are also discussed. It is concluded that (1) fusion is an effective way to improve model performance, (2) back side fusion is the most powerful fusion mode, and (3) method with random crop+multiple backbone+average achieves the best performance.


Author(s):  
Thomas Brunschwiler ◽  
Arvind Sridhar ◽  
Chin Lee Ong ◽  
Gerd Schlottig

An overview of the thermal management landscape with focus on heat dissipation from 3D chip stacks is provided in this study. Evolutionary and revolutionary topologies, such as single-side, dual-side and, finally, volumetric heat removal, are benchmarked with respect to a high-performance three-tier chip stack with an aggregate power dissipation of 672 W. The thermal budget of 50 K can be maintained by three topologies, namely, 1) dual-side cooling, implemented by a thermally active interposer, 2) interlayer cooling with 4-port fluid delivery and drainage at 100 kPa pressure drop, and 3) a hybrid approach combining interlayer with embedded back-side cooling. Of all the heat-removal concepts, interlayer cooling is the only approach that scales with the number of dies in the chip stack and hence, enables extreme 3D integration. However, the required size of the microchannels competes with the requirement of low TSV heights and pitches. A scaling study was performed to derive the TSV pitch that is compatible with cooling channels to dissipate 150 W/cm2 per tier. An active IC area of 4 cm2 was considered, which had to be implemented on the varying tier count in the stack. A cuboid form factor of 2 mm × 4 mm × 2.55 mm results from a die count of 50. The resulting microchannels of 2 mm length allow small hydraulic diameters and thus a very high TSV density of 1837 1/mm2. The accumulated heat flux and the volumetric power dissipation are as high as 7.5 kW/cm2 and 29kW/cm3, respectively.


Author(s):  
M. H. Rhee ◽  
W. A. Coghlan

Silicon is believed to be an almost perfectly brittle material with cleavage occurring on {111} planes. In such a material at room temperature cleavage is expected to occur prior to any dislocation nucleation. This behavior suggests that cleavage fracture may be used to produce usable flat surfaces. Attempts to show this have failed. Such fractures produced in semiconductor silicon tend to occur on planes of variable orientation resulting in surfaces with a poor surface finish. In order to learn more about the mechanisms involved in fracture of silicon we began a HREM study of hardness indent induced fractures in thin samples of oxidized silicon.Samples of single crystal silicon were oxidized in air for 100 hours at 1000°C. Two pieces of this material were glued together and 500 μm thick cross-section samples were cut from the combined piece. The cross-section samples were indented using a Vicker's microhardness tester to produce cracks. The cracks in the samples were preserved by thinning from the back side using a combination of mechanical grinding and ion milling.


2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.


2019 ◽  
Author(s):  
Yan Wang ◽  
Sagar Udyavara ◽  
Matthew Neurock ◽  
C. Daniel Frisbie

<div> <div> <div> <p> </p><div> <div> <div> <p>Electrocatalytic activity for hydrogen evolution at monolayer MoS2 electrodes can be enhanced by the application of an electric field normal to the electrode plane. The electric field is produced by a gate electrode lying underneath the MoS2 and separated from it by a dielectric. Application of a voltage to the back-side gate electrode while sweeping the MoS2 electrochemical potential in a conventional manner in 0.5 M H2SO4 results in up to a 140-mV reduction in overpotential for hydrogen evolution at current densities of 50 mA/cm2. Tafel analysis indicates that the exchange current density is correspondingly improved by a factor of 4 to 0.1 mA/cm2 as gate voltage is increased. Density functional theory calculations support a mechanism in which the higher hydrogen evolution activity is caused by gate-induced electronic charge on Mo metal centers adjacent the S vacancies (the active sites), leading to enhanced Mo-H bond strengths. Overall, our findings indicate that the back-gated working electrode architecture is a convenient and versatile platform for investigating the connection between tunable electronic charge at active sites and overpotential for electrocatalytic processes on ultrathin electrode materials.</p></div></div></div><br><p></p></div></div></div>


Author(s):  
J.S. McMurray ◽  
C.M. Molella

Abstract Root cause for failure of 90 nm body contacted nFETs was identified using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). The failure mechanism was identified using both cross sectional imaging and imaging of the active silicon - buried oxide (BOX) interface in plan view. This is the first report of back-side plan view SCM and SSRM data for SOI devices. This unique plan view shows the root cause for the failure is an under doped link up region between the body contacts and the active channel of the device.


Author(s):  
K. Dickson ◽  
G. Lange ◽  
K. Erington ◽  
J. Ybarra

Abstract This paper describes the use of Electron Beam Absorbed Current (EBAC) mapping performed from the back side of the device as a means of locating metallization defects on flip chip 45nm SOI technology.


Author(s):  
Jamey Moss ◽  
Sam Subramanian ◽  
Vince Soorholtz ◽  
Michael Thomas ◽  
Mark Gerber ◽  
...  

Abstract Several hundred units were subjected to autoclave stress as part of the qualification of a new fast static RAM. Many units failed after autoclave stress, and these parts recovered after conventional depotting using nitric acid and a hot plate. Based on the recovery of the units, the failures were determined to be fuse-related because the nitric acid cleared the fuse cavities during depotting. Chemical analysis after thermally extracting the die from the package revealed an antimony-rich material in failing fuse cavities. Source of the antimony was linked to antimony trioxide added to the plastic package as a fire retardant. However, it was unclear whether the antimony-rich material caused the failure or if it was an artifact of thermal depotting. A new approach that did not thermally or chemically alter the fuse cavities was employed to identify the failing fuses. This approach used a combination of back-side grinding, dimpling, and back-side microprobing. The antimony-rich material found in the fuse cavity was confirmed using SEM and TEM-based EDS analysis, and it is believed to be a major contributing factor to fuse failures. However, it is unclear whether the short was caused by the antimony-rich material or by a reaction between that material and residual aluminum (oxide) left in the fuse cavity after the laser blows.


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