The phase problem for X-ray specular reflectivity from thin films: A new approach

A new approach, based on reciprocal-space vectors (RSVs), is developed to determine Bravais lattice types and accurate lattice parameters of epitaxial thin films by high-resolution X-ray diffractometry. The lattice parameters of single-crystal substrates are employed as references to correct the systematic experimental errors of RSVs of thin films. The general procedure is summarized, involving correction of RSVs, derivation of the raw unit cell, and subsequent conversion to the Niggli unit cell and the Bravais unit cell by matrix calculation. Two methods of this procedure are described: in three-dimensional reciprocal space and in six-dimensionalG6space. The estimation of standard error in the lattice parameters derived by this new approach is discussed. The whole approach is illustrated by examples of experimental data. The error of the best result is 0.0006 Å for the lattice parameter of indium tin oxide film. This new RSV method provides a practical and concise route to the crystal structure study of epitaxial thin films and could also be applied to the investigation of surface and interface structures.

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Electrochromic Performance of V2O5 Thin Films Grown by Spray Pyrolysis

Materials ◽

10.3390/ma13173859 ◽

2020 ◽

Vol 13 (17) ◽

pp. 3859 ◽

Cited By ~ 3

Author(s):

Kyriakos Mouratis ◽

Valentin Tudose ◽

Cosmin Romanitan ◽

Cristina Pachiu ◽

Oana Tutunaru ◽

...

Keyword(s):

Thin Films ◽

Spray Deposition ◽

Cost Effective ◽

Active Surface ◽

X Ray Diffraction ◽

Large Area ◽

New Approach ◽

X Ray ◽

Area Deposition ◽

Scanning Electron

A new approach regarding the development of nanostructured V2O5 electrochromic thin films at low temperature (250 °C), using air-carrier spray deposition and ammonium metavanadate in water as precursor is presented. The obtained V2O5 films were characterized by X-ray diffraction, scanning electron microscopy and Raman spectroscopy, while their electrochromic response was studied using UV-vis absorption spectroscopy and cyclic voltammetry. The study showed that this simple, cost effective, suitable for large area deposition method can lead to V2O5 films with large active surface for electrochromic applications.

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X-Ray and ultraviolet photoelectron spectroscopy studies of Uranium(iv),(v) and(vi) exposed to H2O-plasma under UHV conditions

Dalton Transactions ◽

10.1039/d0dt03562a ◽

2021 ◽

Author(s):

Ghada El Jamal ◽

Thomas Gouder ◽

Rachel Eloirdi ◽

Mats Jonsson

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Surface Characteristics ◽

Ultraviolet Photoelectron Spectroscopy ◽

Oxidative Dissolution ◽

New Approach ◽

X Ray ◽

Spectroscopy Studies

We report surface characteristics of UO2, U2O5 and UO3 thin films after exposure to gas plasmas: a new approach of the oxidative dissolution problem.

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New Approach on Quantification of Porosity of Thin Films via Electron-Excited X-ray Spectra

Analytical Chemistry ◽

10.1021/acs.analchem.6b00847 ◽

2016 ◽

Vol 88 (14) ◽

pp. 7083-7090 ◽

Cited By ~ 28

Author(s):

Erik Ortel ◽

Andreas Hertwig ◽

Dirk Berger ◽

Pasquale Esposito ◽

Andrea M. Rossi ◽

...

Keyword(s):

Thin Films ◽

New Approach ◽

X Ray

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New approach in the monitoring and characterization of titanium nitride thin films

Journal of Materials Research ◽

10.1557/jmr.1999.0062 ◽

1999 ◽

Vol 14 (2) ◽

pp. 436-441 ◽

Cited By ~ 35

Author(s):

S. Logothetidis ◽

E. I. Meletis ◽

G. Kourouklis

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Ex Situ ◽

New Approach ◽

X Ray ◽

Plasma Energy

In situ and ex situ spectroscopic ellipsometry (SE), Raman spectroscopy (RS), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) have been used to study the stoichiometry and characterize TiNx thin films deposited by magnetron sputtering at various stoichiometries. In situ SE can provide parameters, such as the plasma energy, that can be utilized for monitoring of the film stoichiometry. Besides plasma energy, optical phonon position in RS was also found to be a sensitive probe of TiNx stoichiometry as detected by RS, XPS, and ex situ SE. Under these conditions, AES faces difficulties for reliable film characterization, and the complementary use of other techniques is required for determining the exact film stoichiometry.

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Nondestructive Characterization of Multilayer Thin Films by X-ray Reflectivity

Advances in X-ray Analysis ◽

10.1154/s0376030800017730 ◽

1994 ◽

Vol 38 ◽

pp. 139-143

Author(s):

T. C. Huang

Keyword(s):

Thin Films ◽

Layer Structure ◽

Annealing Effect ◽

Multilayer Thin Films ◽

X Ray ◽

Si Substrates ◽

Specular Reflectivity ◽

Reflectivity Data ◽

Nondestructive Characterization

Abstract The X-ray reflectivity technique was used to study the annealing effect on layer structure of Ta/FeMn/NiFe/Cu/NiFe/Ta multilayer thin films on Si substrates. High-resolution specular reflectivity data were collected and analyzed by least-squares refinement. Results on layer thickness, density and roughness were obtained and correlated with the magnetic properties of the films.

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The Precipitation of Si in AlCuSi Thin Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100070618 ◽

1973 ◽

Vol 31 ◽

pp. 34-35 ◽

Cited By ~ 1

Author(s):

R. M. Anderson

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Heat Treatment ◽

Solid Solution ◽

Integrated Circuit ◽

Copper Film ◽

Solution Concentration ◽

X Ray ◽

Silicon Thin Films ◽

Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

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Analysis of electroless nickel thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100086854 ◽

1991 ◽

Vol 49 ◽

pp. 510-511 ◽

Cited By ~ 1

Author(s):

C. W. Price ◽

E. F. Lindsey

Keyword(s):

Thin Films ◽

Inertial Confinement Fusion ◽

Electroless Nickel ◽

Inertial Confinement ◽

Plating Bath ◽

X Ray ◽

Nickel Thin Films ◽

Nickel Deposits ◽

Confinement Fusion ◽

Thickness Measurements

Thickness measurements of thin films are performed by both energy-dispersive x-ray spectroscopy (EDS) and x-ray fluorescence (XRF). XRF can measure thicker films than EDS, and XRF measurements also have somewhat greater precision than EDS measurements. However, small components with curved or irregular shapes that are used for various applications in the the Inertial Confinement Fusion program at LLNL present geometrical problems that are not conducive to XRF analyses but may have only a minimal effect on EDS analyses. This work describes the development of an EDS technique to measure the thickness of electroless nickel deposits on gold substrates. Although elaborate correction techniques have been developed for thin-film measurements by x-ray analysis, the thickness of electroless nickel films can be dependent on the plating bath used. Therefore, standard calibration curves were established by correlating EDS data with thickness measurements that were obtained by contact profilometry.

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Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100134922 ◽

1990 ◽

Vol 48 (2) ◽

pp. 264-265

Author(s):

D. R. Liu ◽

S. S. Shinozaki ◽

R. J. Baird

Keyword(s):

Thin Film ◽

Thin Films ◽

Monte Carlo Simulation ◽

Monte Carlo ◽

Compound Semiconductors ◽

Energy Dispersive Analysis ◽

X Ray ◽

Metastable Alloys ◽

Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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