A new look at the influences of load, grain size and grain boundaries on the room temperature hardness of ceramics

1998 ◽  
Vol 16 (4-6) ◽  
pp. 331-335 ◽  
Author(s):  
A. Krell
Author(s):  
L. S. Lin ◽  
G. W. Levan ◽  
S. M. Russell ◽  
C. C. Law

Recent efforts at P&W have shown that the addition of cobalt to binary NiAl results in an appreciable increase in room temperature ductility. One version of this ternary alloy, designated VIM A, has a composition of Ni-30 at.% Al-35 at.% Co. The addition of 0.5 at.% Hf to this alloy (designated VIM AH) results in an improvement in yield strength at 760°C. Room temperature properties were not found to be significantly affected by the Hf addition. This discussion will focus on the microstructures of alloys VIM A and VIM AH and their relationship to the mechanical properties observed in compression at room temperature and 760°C.The addition of hafnium reduced the grain size of VIM AH alloy. After room temperature compression, both alloys show an ordered bcc (B2) matrix and precipitates which are distributed primarily along grain boundaries. These precipitates were identified by microdiffraction to be ordered fcc (L12) gamma prime for VIM A and hexagonal (A3) for VIM AH.


Author(s):  
L. S. Lin ◽  
G. W. Levan ◽  
S. M. Russell ◽  
C. C. Law

AEM examinations of a NiAlCo alloy of composition Ni-29 at.% Al-21 at.% Co after room temperature compression show that the microstructure consists of a twinned tetragonal matrix (L10, marked A in Figure 1a) and ordered fcc gamma prime precipitates (L12, marked B in Figure 1a) along grain boundaries. The compressive yield strengths of this alloy at room temperature and 760°C are 754 MPa and 163 MPa respectively. It also has superior room temperature ductility as compared to binary NiAl. An addition of 5 at.% Ti at the expense of Ni was made to this alloy in order to increase the yield strengths. The quarternary alloy shows compressive yield strengths of 976 MPa and 403 MPa at room temperature and 760°C, respectively, indicating that the Ti addition is having the desired effect.Comparison of the microstructures of the two alloys after room temperature compression (Figures la and lb) shows that the Ti containing alloy has a smaller grain size. X-ray diffraction data indicate that the gamma prime volume fraction increases from 10% to 20% as the result of the Ti addition. Titanium was also found to stabilize the B2 matrix (marked A in Figure lb) as no tetragonal L10 phase was found. All precipitates along grain boundaries were identified by micro-diffraction to be gamma prime.


1993 ◽  
Vol 309 ◽  
Author(s):  
E.G. Colgan ◽  
K.P. Rodbell ◽  
D.R. Vigliotti

AbstractThe Cu distribution in AI(Cu) thin films has been examined in blanket and patterned samples as a function of annealing. The Cu concentration in the Al grains, measured at room temperature, closely follows the solubility at the anneal temperature when a high cooling rate is used (-100 or -200°C/min) from the annealing temperature. With fine lines, the room temperature Cu concentration follows the solubility at the anneal temperature only at low anneal temperatures, ≤350°C. With higher temperatureannealing, >400°C, the room temperature Cu concentration in the Al grains was substantially less than the solubility at the anneal temperature. These differences are attributed to the smaller grain size in fine lines, which reduces the distance to grain boundaries. With blanket films, the Θ-phase (Al2Cu) precipitate morphology depends on the Al grain size and annealing temperature. With small Al grains (100-300 nm), the Θ particles are small (100-200 nm) and round whereas with large Al grains (0.5-2μm), the precipitates are long and irregularly shaped. The morphology of the Θ precipitates is constrained by the Al grain size. With fine lines, having a bamboo structure, the Θ precipitates are “wedge” shaped along grain boundaries or span the width of the line. The electromigration lifetime was found to depend strongly on the heat treatment used, an increase of 3X in lifetime was obtained for samples rapidly cooled from a temperature above the solvus curve as compared with samples subjected to additional aging at low temperatures. This is believed to be dueto the different concentrations of Cu in solution and to the size and distribution of Θparticles in the patterned lines.


2013 ◽  
Vol 1543 ◽  
pp. 93-98 ◽  
Author(s):  
Tsung-ta E. Chan ◽  
Rama Venkatasubramanian ◽  
James M. LeBeau ◽  
Peter Thomas ◽  
Judy Stuart ◽  
...  

ABSTRACTGrain boundaries are known to be able to impede phonon transport in the material. In the thermoelectric application, this phenomenon could help improve the figure-of-merit (ZT) and enhance the thermal to electrical conversion. Bi2Te3 based alloys are renowned for their high ZT around room temperature but still need improvements, in both n- and p-type materials, for the resulting power generation devices to be more competitive. To implement high density of grain boundaries into the bulk materials, a bottom-up approach is employed in this work: consolidations of nanocrystalline powders into bulk disks. Nanocrystalline powders are developed by high energy cryogenic mechanical alloying that produces Bi(Sb)Te(Se) alloy powders with grain size in the range of 7 to 14 nm, which is about 25% finer compared to room temperature mechanical alloying. High density of grain boundaries are preserved from the powders to the bulk materials through optimized high pressure hot pressing. The consolidated bulk materials have been characterized by X-ray diffraction and transmission electron microscope for their composition and microstructure. They mainly consist of grains in the scale of 100 nm with some distributions of finer grains in both types of materials. Preliminary transport property measurements show that the thermal conductivity is significantly reduced at and around room temperature: about 0.65 W/m-K for the n-type BiTe(Se) and 0.85 W/m-K for the p-type Bi(Sb)Te, which are attributed to increased phonon scattering provided by the nanostructure and therefore enhanced ZT about 1.35 for the n-type and 1.21 for the p-type are observed. Detailed transport properties, such as the electrical resistivity, Seebeck coefficient and power factor as well as the resulting ZT as a function of temperature will be described.


1996 ◽  
Vol 11 (9) ◽  
pp. 2128-2130 ◽  
Author(s):  
Minoru Furukawa ◽  
Zenji Horita ◽  
Minoru Nemoto ◽  
Ruslan Z. Valiev ◽  
Terence G. Langdon

The Zn–22% Al eutectoid alloy is capable of exhibiting very high superplastic elongations, in excess of 2000% in tension, when the grain size is in the range of ∼ 1–10 μm. This paper describes the fabrication of a submicrometer grain size in the Zn–22% Al alloy by subjecting the samples to intense plastic straining in torsion under high pressure (∼5 GPa) at room temperature. Observations after straining revealed a heterogeneous microstructure with grain sizes in the range of ∼0.1–0.5 μm. As a result of the low melting temperature of the alloy, the high internal stresses introduced by torsion straining are relaxed and the grain boundaries are close to an equilibrium configuration.


Author(s):  
Ernest L. Hall ◽  
Lee E. Rumaner ◽  
Mark G. Benz

The intermetallic compound Nb3Sn is a type-II superconductor of interest because it has high values of critical current density Jc in high magnetic fields. One method of forming this compound involves diffusion of Sn into Nb foil containing small amounts of Zr and O. In order to maintain high values of Jc, it is important to keep the grain size in the Nb3Sn as small as possible, since the grain boundaries act as flux-pinning sites. It has been known for many years that Zr and O were essential to grain size control in this process. In previous work, we have shown that (a) the Sn is transported to the Nb3Sn/Nb interface by liquid diffusion along grain boundaries; (b) the Zr and O form small ZrO2 particles in the Nb3Sn grains; and (c) many very small Nb3Sn grains nucleate from a single Nb grain at the reaction interface. In this paper we report the results of detailed studies of the Nb3Sn/Nb3Sn, Nb3Sn/Nb, and Nb3Sn/ZrO2 interfaces.


Author(s):  
H. Lin ◽  
D. P. Pope

During a study of mechanical properties of recrystallized B-free Ni3Al single crystals, regularly spaced parallel traces within individual grains were discovered on the surfaces of thin recrystallized sheets, see Fig. 1. They appeared to be slip traces, but since we could not find similar observations in the literature, a series of experiments was performed to identify them. We will refer to them “traces”, because they contain some, if not all, of the properties of slip traces. A variety of techniques, including the Electron Backscattering Pattern (EBSP) method, was used to ascertain the composition, geometry, and crystallography of these traces. The effect of sample thickness on their formation was also investigated.In summary, these traces on the surface of recrystallized Ni3Al have the following properties:1.The chemistry and crystallographic orientation of the traces are the same as the bulk. No oxides or other second phases were observed.2.The traces are not grooves caused by thermal etching at previous locations of grain boundaries.3.The traces form after recrystallization (because the starting Ni3Al is a single crystal).4.For thicknesses between 50 μm and 720 μm, the density of the traces increases as the sample thickness decreases. Only one set of “protrusion-like” traces is visible in a given grain on the thicker samples, but multiple sets of “cliff-like” traces are visible on the thinner ones (See Fig. 1 and Fig. 2).5.They are linear and parallel to the traces of {111} planes on the surface, see Fig. 3.6.Some of the traces terminate within the interior of the grains, and the rest of them either terminate at or are continuous across grain boundaries. The portion of latter increases with decreasing thickness.7.The grain size decreases with decreasing thickness, the decrease is more pronounced when the grain size is comparable with the thickness, Fig. 4.8.Traces also formed during the recrystallization of cold-rolled polycrystalline Cu thin sheets, Fig. 5.


2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].


2020 ◽  
Vol 39 (1) ◽  
pp. 136-145 ◽  
Author(s):  
Sojiro Uemura ◽  
Shiho Yamamoto Kamata ◽  
Kyosuke Yoshimi ◽  
Sadahiro Tsurekawa

AbstractMicrostructural evolution in the TiC-reinforced Mo–Si–B-based alloy during tensile creep deformation at 1,500°C and 137 MPa was investigated via scanning electron microscope-backscattered electron diffraction (SEM-EBSD) observations. The creep curve of this alloy displayed no clear steady state but was dominated by the tertiary creep regime. The grain size of the Moss phase increased in the primary creep regime. However, the grain size of the Moss phase was found to remarkably decrease to <10 µm with increasing creep strain in the tertiary creep regime. The EBSD observations revealed that the refinement of the Moss phase occurred by continuous dynamic recrystallization including the transformation of low-angle grain boundaries to high-angle grain boundaries. Accordingly, the deformation of this alloy is most likely to be governed by the grain boundary sliding and the rearrangement of Moss grains such as superplasticity in the tertiary creep regime. In addition, the refinement of the Moss grains surrounding large plate-like T2 grains caused the rotation of their surfaces parallel to the loading axis and consequently the cavitation preferentially occurred at the interphases between the end of the rotated T2 grains and the Moss grains.


Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 607
Author(s):  
A. I. Alateyah ◽  
Mohamed M. Z. Ahmed ◽  
Yasser Zedan ◽  
H. Abd El-Hafez ◽  
Majed O. Alawad ◽  
...  

The current study presents a detailed investigation for the equal channel angular pressing of pure copper through two regimes. The first was equal channel angular pressing (ECAP) processing at room temperature and the second was ECAP processing at 200 °C for up to 4-passes of route Bc. The grain structure and texture was investigated using electron back scattering diffraction (EBSD) across the whole sample cross-section and also the hardness and the tensile properties. The microstructure obtained after 1-pass at room temperature revealed finer equiaxed grains of about 3.89 µm down to submicrons with a high density of twin compared to the starting material. Additionally, a notable increase in the low angle grain boundaries (LAGBs) density was observed. This microstructure was found to be homogenous through the sample cross section. Further straining up to 2-passes showed a significant reduction of the average grain size to 2.97 µm with observable heterogeneous distribution of grains size. On the other hand, increasing the strain up to 4-passes enhanced the homogeneity of grain size distribution. The texture after 4-passes resembled the simple shear texture with about 7 times random. Conducting the ECAP processing at 200 °C resulted in a severely deformed microstructure with the highest fraction of submicron grains and high density of substructures was also observed. ECAP processing through 4-passes at room temperature experienced a significant increase in both hardness and tensile strength up to 180% and 124%, respectively.


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