All-carbocycle hydrocarbon thermosets with high thermal stability and robust mechanical strength for low-k interlayer dielectrics

2021 ◽  
Author(s):  
Yudi Feng ◽  
Ke Jin ◽  
Jia Guo ◽  
Changchun Wang
Keyword(s):  
Thermal Stability ◽  
Mechanical Strength ◽  
Dielectric Materials ◽  
High Thermal Stability ◽  
Thermal Stabilities ◽  
Interlayer Dielectric ◽  
Interlayer Dielectrics ◽  
Low Permittivity ◽  
Low K

The development of modern microelectronic industry calls for low permittivity interlayer dielectric materials with excellent thermal stabilities, robust mechanical strength and matching processability. Traditionally, it is difficult to fabricate materials...

An investigation of ultra low-k dielectrics with high thermal stability for integration in memory devices

2007 ◽  
Vol 84 (11) ◽  
pp. 2582-2586 ◽  
Author(s):  
E. Hong ◽  
S. Demuynck ◽  
Q.T. Le ◽  
M. Baklanov ◽  
L. Carbonell ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Thermal Stability ◽  
Memory Devices ◽  
Low K

Designing Ultra Low-k Dielectric Materials for Ease of Patterning

2010 ◽  
Vol 1249 ◽  
Author(s):  
George Andrew Antonelli ◽  
Gengwei Jiang ◽  
Mandyam Sriram ◽  
Kaushik Chattopadhyay ◽  
Wei Guo ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Beam ◽  
Plasma Reactor ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Interlayer Dielectric ◽  
Inductively Coupled ◽  
Inductively Coupled Plasma Reactor ◽  
Low K

AbstractOrganosilicate materials with dielectric constants (k) ranging from 3.0 to 2.2 are in production or under development for use as interlayer dielectric materials in advanced interconnect logic technology. The dielectric constant of these materials is lowered through the addition of porosity which lowers the film density, making the patterning of these materials difficult. The etching kinetics and surface roughening of a series of low-k dielectric materials with varying porosity and composition were investigated as a function of ion beam angle in a 7% C4F8/Ar chemistry in an inductively-coupled plasma reactor. A similar set of low-k samples were patterned in a single damascene scheme. With a basic understanding of the etching process, we will show that it is possible to proactively design a low-k material that is optimized for a given patterning. A case study will be used to illustrate this point.

Via-Profile Controlled, Porous Low-k/ Cu DDIs with High Thermal Stability

2005 ◽  
Author(s):  
H. Ohtake ◽  
S. Saito ◽  
M. Tagami ◽  
M. Tada ◽  
M. Abe ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Thermal Stability ◽  
Low K

Flexible polyarylene ether nitrile containing pendant carboxyl groups/Eu(III) fluorescent films with high thermal stability and mechanical strength

2011 ◽  
Vol 65 (23-24) ◽  
pp. 3450-3453 ◽  
Author(s):  
Hailong Tang ◽  
Zhen Ma ◽  
Jian Yang ◽  
Jiachun Zhong ◽  
Rui Zhao ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Mechanical Strength ◽  
High Thermal Stability ◽  
Carboxyl Groups ◽  
Polyarylene Ether Nitrile

Thermal stability and structural evolution of low-K Fluorinated amorphous carbon during thermal annealing

1998 ◽  
Vol 511 ◽  
Author(s):  
Hongning Yang ◽  
Douglas J. Tweet ◽  
Yanjun Ma ◽  
Tue Nguyen ◽  
David R. Evans ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Thermal Annealing ◽  
Structural Evolution ◽  
Fluorine Concentration ◽  
Interlayer Dielectric ◽  
Profound Impact ◽  
Initial Stage ◽  
Stress Changes ◽  
Low K

ABSTRACTHighly crosslinked a-F:C films can undergo a significant change after thermal annealing, where the film expands by ∼3%, the density reduces by ∼10% and the internal stress changes from compressive to tensile. The loss of fluorine concentration and the reduction of CF. are accompanied by the transition of (C-C, sp3) to (C=C, sp2) groups. After annealing, the dielectric constant is reduced and the leakage current increases slightly. Most importantly, these changes occur only at the initial stage of annealing. After the initial annealing, the a-F:C film tends to be thermally stable and retains reasonably good electrical properties as a low-k interlayer dielectric. The profound impact of these results on Cu/a-F:C integration will be briefly discussed.

scholarly journals The Evolution of Organosilicon Precursors for Low-k Interlayer Dielectric Fabrication Driven by Integration Challenges

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 4827
Author(s):  
Nianmin Hong ◽  
Yinong Zhang ◽  
Quan Sun ◽  
Wenjie Fan ◽  
Menglu Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Data Storage ◽  
Integrated Circuit ◽  
Porous Silica ◽  
Dielectric Materials ◽  
Interlayer Dielectric ◽  
Damascene Process ◽  
Key Issues ◽  
Deposition Processes ◽  
Low K

Since the application of silicon materials in electronic devices in the 1950s, microprocessors are continuously getting smaller, faster, smarter, and larger in data storage capacity. One important factor that makes progress possible is decreasing the dielectric constant of the insulating layer within the integrated circuit (IC). Nevertheless, the evolution of interlayer dielectrics (ILDs) is not driven by a single factor. At first, the objective was to reduce the dielectric constant (k). Reduction of the dielectric constant of a material can be accomplished by selecting chemical bonds with low polarizability and introducing porosity. Moving from silicon dioxide, silsesquioxane-based materials, and silica-based materials to porous silica materials, the industry has been able to reduce the ILDs’ dielectric constant from 4.5 to as low as 1.5. However, porous ILDs are mechanically weak, thermally unstable, and poorly compatible with other materials, which gives them the tendency to absorb chemicals, moisture, etc. All these features create many challenges for the integration of IC during the dual-damascene process, with plasma-induced damage (PID) being the most devastating one. Since the discovery of porous materials, the industry has shifted its focus from decreasing ILDs’ dielectric constant to overcoming these integration challenges. More supplementary precursors (such as Si-C-Si structured compounds), deposition processes (such as NH3 plasma treatment), and post porosity plasma protection treatment (P4) were invented to solve integration-related challenges. Herein, we present the evolution of interlayer dielectric materials driven by the following three aspects, classification of dielectric materials, deposition methods, and key issues encountered and solved during the integration phase. We aim to provide a brief overview of the development of low-k dielectric materials over the past few decades.

scholarly journals The effect of temperature on the growth of pox viruses in the chick embryo

1961 ◽  
Vol 59 (4) ◽  
pp. 457-470 ◽  
Author(s):  
H. S. Bedson ◽  
K. R. Dumbell
Keyword(s):  
Thermal Stability ◽  
Chick Embryo ◽  
High Thermal Stability ◽  
Effect Of Temperature ◽  
Maximum Temperature ◽  
Thermal Stabilities ◽  
Ceiling Temperature ◽  
Potential Use ◽  
Vaccinia Strain

The ‘ceiling temperature’ of a pox virus has been defined as the maximum temperature (to the nearest 0·5° C.) of incubation at and below which that virus will grow and produce pocks on the chorioallantois of 12-day-old chick embryos, and above which no pocks appear.Ceiling temperatures have been estimated for: alastrim (2 strains), 37·5° C.; variola major (2 strains), 3·8° C.; ectromelia (3 strains) and monkey pox (1 strain), 39°C.; cowpox (2 strains), 40°C. Five strains of vaccinia and two of rabbit pox were all capable of pock formation at 40·5° C. Above this temperature difficulty was encountered because many embryos died. But the ceiling temperature for two strains of vaccinia and one strain of rabbit pox was probably 41° C. The Utrecht strain of rabbit pox produced some lesions at 41·5° C.—the highest temperature used.The ceiling temperatures of the viruses used were not correlated with their thermal stabilities at 55°C.in vitro. Thus vaccinia strain, Lederle-7 N, had a high ceiling temperature and a low thermal stability, while variola major had a low ceiling temperature and a high thermal stability. For this reason ceiling temperatures and thermal stability are regarded as distinct characters.In experiments with twelve of the seventeen viruses of which the ceiling temperatures had been determined, the virulence for the chick embryo was then measured. It was found that, in general, the higher the ceiling temperature of a virus the greater was its virulence for the chick embryo.The presentation of these results is followed by a brief discussion of their significance and potential use.

New, thermally stable, rigid polyurethane foams based on polyols obtained using morpholine-2,3-dione derivatives

2018 ◽  
Vol 54 (4) ◽  
pp. 719-741 ◽  
Author(s):  
Iwona Zarzyka ◽  
Anita Bialkowska ◽  
Tomasz Paczesniak ◽  
Wieslaw Fracz ◽  
Dorota Majda
Keyword(s):  
Thermal Stability ◽  
Mechanical Strength ◽  
Operating Temperature ◽  
Polyurethane Foams ◽  
High Thermal Stability ◽  
Thermally Stable ◽  
Insulating Materials ◽  
Research Results ◽  
Rigid Polyurethane Foams

In this work, the research results of the synthesis and properties of the polyols with the oxamidoester group, obtained in the reaction of N-substituted morpholine-2,3-dione derivatives with excess of alkylene carbonates have been presented. Using these derivatives as polyol components, rigid foamed polyurethane materials of high thermal stability and mechanical strength have been obtained. New polyurethane foams obtained using hydroxypropyl morpholine-2,3-dione derivatives can be used as heat-insulating materials of operating temperature as high as 150°C.

Novel Materials as Interlayer Low-K Dielectrics for CMOS Interconnect Applications

2011 ◽  
Vol 110-116 ◽  
pp. 5380-5383
Author(s):  
Tejas R. Naik ◽  
Veena R. Naik ◽  
Nisha P. Sarwade
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Novel Materials ◽  
Low Dielectric ◽  
Processing Properties ◽  
New Generation ◽  
Low K

Scaling down the integrated circuits has resulted in the arousal of number of problems like interaction between interconnect, crosstalk, time delay etc. These problems can be overcome by new designs and by use of corresponding novel materials, which may be a solution to these problems. In the present paper we try to put forward very recent development in the use of novel materials as interlayer dielectrics (ILDs) having low dielectric constant (k) for CMOS interconnects. The materials presented here are porous and hybrid organo-inorganic new generation interlayer dielectric materials possessing low dielectric constant and better processing properties.

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