Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high-k gate dielectrics using x-ray photoelectron spectroscopy

2008 ◽  
Vol 93 (6) ◽  
pp. 062107 ◽  
Author(s):  
H. J. Oh ◽  
J. Q. Lin ◽  
S. J. Lee ◽  
G. K. Dalapati ◽  
A. Sridhara ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gate Dielectrics ◽  
Chemical Vapor ◽  
Interfacial Properties ◽  
X Ray ◽  
High K ◽  
Chemical Vapor Deposited

X-Ray Photoemission Study of Silicon Nitride-GaAs Interfaces in Relation with GaAs Mesfet Passivation

1987 ◽  
Vol 98 ◽  
Author(s):  
Patrick Alnot ◽  
J. Olivier ◽  
F. Wyczisk ◽  
J. F. Peray ◽  
R. Joubart
Keyword(s):  
Chemical Composition ◽  
Photoelectron Spectroscopy ◽  
Excitation Frequency ◽  
Chemical Vapor ◽  
Gaas Surface ◽  
Surface Pretreatment ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Plasma Excitation ◽  
Photoemission Study

ABSTRACTWe have studied the influence of different GaAs surface treatments on the chemical composition and electrical behavior of the Si 3 N4 -GaAs interface, where Si 3 N4 was plasma enhanced chemical vapor deposited (PECVD) onto the treated GaAs(100) substrate. The chemistry of the resulting interface has been studied by X-ray photoelectron spectroscopy (XPS). It has been demonstrated that the chemical composition of the Si 3 N4-GaAs interface is drastically dependent on GaAs surface pretreatment and r.f. plasma excitation frequency. Output-input powers characteristics have been measured on chemically treated planar MESFET after Si3N4. passivation.

Surface Modification of Chemical Vapor Deposited Diamond Induced by Power Ultrasound: An X-Ray Photoelectron Spectroscopy Study

2001 ◽  
Vol 4 (7) ◽  
pp. E29 ◽  
Author(s):  
Christiaan H. Goeting ◽  
Frank Marken ◽  
Anthony R. Osborn ◽  
Richard G. Compton ◽  
John S. Foord
Keyword(s):  
Surface Modification ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Spectroscopy Study ◽  
Power Ultrasound ◽  
X Ray ◽  
Chemical Vapor Deposited

Chemical Stability of Reactively Sputtered AlN with Plasma Enhanced Chemical Vapor Deposited SiO2 and SiNx

1994 ◽  
Vol 343 ◽  
Author(s):  
Jaeshin Cho ◽  
Naresh C. Saha
Keyword(s):  
Chemical Stability ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Etch Rate ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Nitride Film ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Wet Etch

ABSTRACTWe have studied the chemical stability of reactively sputtered aluminum nitride film with plasma-enhanced chemical vapor deposited SiO2 and SiNx films. It was found that the PECVD SiO2 film reacted with A1N to form aluminosilicate (3Al2O3·2SiO2) at the SiO2/A1N interface after annealing above 550°C. The presence of Al-0 bonds at the SiO2/AlN interface was verified with x-ray photoelectron spectroscopy and x-ray induced Auger electron spectroscopy. The formation of aluminosilicate resulted in significant decrease in the wet etch rate of A1N layer. For SiNx/AlN/Si layered structure, no interfacial reactions were detected at the SiNx/AlN interface after annealing up to 850°C. These results confirm the thermodynamic predictions on the mutual stability of SiNx/AlN and SiO2/AlN.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films

1999 ◽  
Vol 567 ◽  
Author(s):  
Renee Nieh ◽  
Wen-Jie Qi ◽  
Yongjoo Jeon ◽  
Byoung Hun Lee ◽  
Aaron Lucas ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Future Generation ◽  
Oxide Thickness ◽  
Layer Growth ◽  
X Ray ◽  
Bst Films

ABSTRACTBa0.5Sr0.5TiO3 (BST) is one of the high-k candidates for replacing SiO2 as the gate dielectric in future generation devices. The biggest obstacle to scaling the equivalent oxide thickness (EOT) of BST is an interfacial layer, SixOy, which forms between BST and Si. Nitrogen (N2) implantation into the Si substrate has been proposed to reduce the growth of this interfacial layer. In this study, capacitors (Pt/BST/Si) were fabricated by depositing thin BST films (50Å) onto N2 implanted Si in order to evaluate the effects of implant dose and annealing conditions on EOT. It was found that N2 implantation reduced the EOT of RF magnetron sputtered and Metal Oxide Chemical Vapor Deposition (MOCVD) BST films by ∼20% and ∼33%, respectively. For sputtered BST, an implant dose of 1×1014cm−;2 provided sufficient nitrogen concentration without residual implant damage after annealing. X-ray photoelectron spectroscopy data confirmed that the reduction in EOT is due to a reduction in the interfacial layer growth. X-ray diffraction spectra revealed typical polycrystalline structure with (111) and (200) preferential orientations for both films. Leakage for these 50Å BST films is on the order of 10−8 to 10−5 A/cm2—lower than oxynitrides with comparable EOTs.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

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