Investigation on the interface trap characteristics in a p-channel GaN MOSFET through temperature-dependent subthreshold slope analysis

2021 ◽  
Author(s):  
Jiabo Chen ◽  
Zhihong Liu ◽  
Haiyong Wang ◽  
Xiaoxiao Zhu ◽  
Dan Zhu ◽  
...  
Keyword(s):  
Energy Distribution ◽  
Room Temperature ◽  
Energy Levels ◽  
Interface Trap ◽  
Subthreshold Slope ◽  
Temperature Dependent ◽  
Subthreshold Region ◽  
Simple Method ◽  
Characterization Methods ◽  
Slope Analysis

Abstract In this paper, a simple method based on subthreshold slopes was proposed to investigate the interface trap characteristics in a p-channel GaN MOSFET with a p-GaN/AlGaN/GaN structure on Si. The energy distribution of the interface trap density has been extracted from the analysis of the transfer characteristics in the subthreshold region of operation. The interface trap densities and respective energy distribution at both room temperature and 150 ℃ were also calculated from the ac conductance measurements at corresponding applied biases. Both characterization methods show similar results of trap densities and energy levels.

scholarly journals Temperature-Dependent Photoluminescence of Manganese Halide with Tetrahedron Structure in Anti-Perovskites

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3310
Author(s):  
Yijie Xia ◽  
Shuaishuai Du ◽  
Pengju Huang ◽  
Luchao Wu ◽  
Siyu Yan ◽  
...  
Keyword(s):  
Energy Level ◽  
Recombination Rate ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Energy Levels ◽  
Radiative Recombination Rate ◽  
Temperature Dependent ◽  
Recombination Rates ◽  
Increasing Temperature ◽  
Temperature Dependent Photoluminescence

The temperature-dependent photoluminescence (PL) properties of an anti-perovskite [MnBr4]BrCs3 sample in the temperature range of 78–500 K are studied in the present work. This material exhibits unique performance which is different from a typical perovskite. Experiments showed that from room temperature to 78 K, the luminous intensity increased as the temperature decreased. From room temperature to 500 K, the photoluminescence intensity gradually decreased with increasing temperature. Experiments with varying temperatures repeatedly showed that the emission wavelength was very stable. Based on the above-mentioned phenomenon of the changing photoluminescence under different temperatures, the mechanism is deduced from the temperature-dependent characteristics of excitons, and the experimental results are explained on the basis of the types of excitons with different energy levels and different recombination rates involved in the steady-state PL process. The results show that in the measured temperature range of 78–500 K, the steady-state PL of [MnBr4]BrCs3 had three excitons with different energy levels and recombination rates participating. The involved excitons with the highest energy level not only had a high radiative recombination rate, but a high non-radiative recombination rate as well. The excitons at the second-highest energy level had a similar radiative recombination rate to the lowest energy level excitons and a had high non-radiative recombination rate. These excitons made the photoluminescence gradually decrease with increasing temperature. This may be the reason for this material’s high photoluminescence efficiency and low electroluminescence efficiency.

Optical and Electrical Properties of Low to Highly-Degenerate InN Films

2003 ◽  
Vol 798 ◽  
Author(s):  
D. B. Haddad ◽  
H. Dai ◽  
R. Naik ◽  
C. Morgan ◽  
V. M. Naik ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Energy Levels ◽  
Shallow Donor ◽  
Optical And Electrical Properties ◽  
Electrical Measurements ◽  
Temperature Dependent ◽  
Hall Effect Measurements ◽  
Lower Temperature ◽  
Different Levels

ABSTRACTThe optical and electrical properties of InN films with different levels of carrier concentrations have been investigated. Hall effect measurements at room temperature show that the InN films are n-type with carrier concentration, ne, ranging from ∼ 7 ×1017 cm-3 to ∼ 3 × 1020 cm-3 and corresponding mobility, //, of ∼ 1300 to 50 cm2V-1S-1. Optical absorption spectra of these films show a bandgap absorption edge ∼ 0.6 eV for the InN sample with the lowest ne, and 1.5 eV for the InN sample with the highest ne. However, after corrections for the degeneracy effects, all samples show an intrinsic Eg ∼ (0.60 ± 0.05) eV. Temperature dependent (5 – 600 K) electrical measurements show that ne is nearly independent of temperature below 300 K, perhaps due to the presence of donor energy levels resonating with the InN conduction band. However, all the samples show an exponential increase in ne above 300 K due to excitation of other shallow donor like sources. Mobility versus temperature graph shows a maximum ∼ 200 K for InN film with ne = 7 × 1017 cm-3 and moves towards lower temperature with increasing ne.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

scholarly journals Thermochromic aggregation-induced dual phosphorescence via temperature-dependent sp3-linked donor-acceptor electronic coupling

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Tao Wang ◽  
Zhubin Hu ◽  
Xiancheng Nie ◽  
Linkun Huang ◽  
Miao Hui ◽  
...  
Keyword(s):  
Excited State ◽  
Room Temperature ◽  
Electronic Coupling ◽  
Temperature Dependent ◽  
Molecular Systems ◽  
Donor And Acceptor ◽  
Theoretical Investigations ◽  
Donor Acceptor ◽  
And Control ◽  
Two Temperature

AbstractAggregation-induced emission (AIE) has proven to be a viable strategy to achieve highly efficient room temperature phosphorescence (RTP) in bulk by restricting molecular motions. Here, we show that by utilizing triphenylamine (TPA) as an electronic donor that connects to an acceptor via an sp3 linker, six TPA-based AIE-active RTP luminophores were obtained. Distinct dual phosphorescence bands emitting from largely localized donor and acceptor triplet emitting states could be recorded at lowered temperatures; at room temperature, only a merged RTP band is present. Theoretical investigations reveal that the two temperature-dependent phosphorescence bands both originate from local/global minima from the lowest triplet excited state (T1). The reported molecular construct serves as an intermediary case between a fully conjugated donor-acceptor system and a donor/acceptor binary mix, which may provide important clues on the design and control of high-freedom molecular systems with complex excited-state dynamics.

scholarly journals Local ferroelectric polarization switching driven by nanoscale distortions in thermoelectric $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aastha Vasdev ◽  
Moinak Dutta ◽  
Shivam Mishra ◽  
Veerpal Kaur ◽  
Harleen Kaur ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Direct Evidence ◽  
Temperature Dependent ◽  
Force Microscopy ◽  
Ferroelectric Domains ◽  
Pdf Analysis ◽  
Ferroelectric Transition Temperature

AbstractA remarkable decrease in the lattice thermal conductivity and enhancement of thermoelectric figure of merit were recently observed in rock-salt cubic SnTe, when doped with germanium (Ge). Primarily, based on theoretical analysis, the decrease in lattice thermal conductivity was attributed to local ferroelectric fluctuations induced softening of the optical phonons which may strongly scatter the heat carrying acoustic phonons. Although the previous structural analysis indicated that the local ferroelectric transition temperature would be near room temperature in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te , a direct evidence of local ferroelectricity remained elusive. Here we report a direct evidence of local nanoscale ferroelectric domains and their switching in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te using piezoeresponse force microscopy(PFM) and switching spectroscopy over a range of temperatures near the room temperature. From temperature dependent (250–300 K) synchrotron X-ray pair distribution function (PDF) analysis, we show the presence of local off-centering distortion of Ge along the rhombohedral direction in global cubic $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te . The length scale of the $${\text {Ge}}^{2+}$$ Ge 2 + off-centering is 0.25–0.10 Å near the room temperatures (250–300 K). This local emphatic behaviour of cation is the cause for the observed local ferroelectric instability, thereby low lattice thermal conductivity in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te .

Atomistic prediction on the configuration- and temperature-dependent dielectric constant of Be0.25Mg0.75O superlattice as a high-κ dielectric layer

2021 ◽  
Author(s):  
Gyuseung Han ◽  
In Won Yeu ◽  
Kun Hee Ye ◽  
Seung-Cheol Lee ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dft Calculations ◽  
Bond Length ◽  
Dielectric Layer ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Temperature Dependent ◽  
High Dielectric

Through DFT calculations, a Be0.25Mg0.75O superlattice having long apical Be–O bond length is proposed to have a high bandgap (>7.3 eV) and high dielectric constant (∼18) at room temperature and above.

scholarly journals Synthesis and characterization of a new ZIF-67@MgAl2O4 nanocomposite and its adsorption behaviour

RSC Advances ◽  
2021 ◽  
Vol 11 (22) ◽  
pp. 13245-13255
Author(s):  
Mehdi Davoodi ◽  
Fatemeh Davar ◽  
Mohammad R. Rezayat ◽  
Mohammad T. Jafari ◽  
Mehdi Bazarganipour ◽  
...  
Keyword(s):  
Room Temperature ◽  
Magnesium Aluminate ◽  
Synthesis And Characterization ◽  
Magnesium Aluminate Spinel ◽  
Adsorption Behaviour ◽  
Zeolitic Imidazolate Framework ◽  
Simple Method

New nanocomposite of zeolitic imidazolate framework-67@magnesium aluminate spinel (ZIF-67@MgAl2O4) has been fabricated by a simple method at room temperature with different weight ratios.

scholarly journals EPR Spectra of Sintered Cd1−xCrxTe Powdered Crystals with Various Cr Content

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3449
Author(s):  
Ireneusz Stefaniuk ◽  
Werner Obermayr ◽  
Volodymyr D. Popovych ◽  
Bogumił Cieniek ◽  
Iwona Rogalska
Keyword(s):  
Curie Temperature ◽  
Room Temperature ◽  
Integral Intensity ◽  
Resonance Field ◽  
Epr Spectra ◽  
Paramagnetic Resonance ◽  
Simple Method ◽  
Paramagnetic Curie Temperature ◽  
Cr Content ◽  
Electron Paramagnetic

In this paper, we show a simple method of producing ferromagnetic materials with a Curie temperature above room temperature. The electron paramagnetic resonance (EPR) spectra of Cd1−xCrxTe (0.002 < x < 0.08) were measured with a dependence on temperature (82 K < T < 381 K). Obtained EPR lines were fitted to a Lorentz-shaped curve. The temperature dependencies of the parameters of the EPR lines, such as the peak-to-peak linewidth (Hpp), the intensity (A), as well as the resonance field (Hr), were studied. Ferromagnetism was noticed in samples at high temperatures (near room temperature). For a sample with a nominal concentration of chrome of x = 0.05, a very strong intrinsic magnetic field is observed. The value of the effective gyromagnetic factor for this sample is ge = 30 at T = 240 K. An increase of chrome concentration above x = 0.05 reduces the ferromagnetic properties considerably. Analysis of the temperature dependencies of the integral intensity of EPR spectra was carried out using the Curie–Weiss law and the paramagnetic Curie temperature was obtained.

Temperature-induced structural phase transitions in RERhSn (RE = Y, Gd-Tm, Lu)

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Simon Engelbert ◽  
Rolf-Dieter Hoffmann ◽  
Jutta Kösters ◽  
Steffen Klenner ◽  
Rainer Pöttgen
Keyword(s):  
Rare Earth ◽  
Phase Transitions ◽  
Driving Force ◽  
Room Temperature ◽  
Structural Phase ◽  
Structural Phase Transitions ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray

Abstract The structures of the equiatomic stannides RERhSn with the smaller rare earth elements Y, Gd-Tm and Lu were reinvestigated on the basis of temperature-dependent single crystal X-ray diffraction data. GdRhSn crystallizes with the aristotype ZrNiAl at 293 and 90 K. For RE = Y, Tb, Ho and Er the HP-CeRuSn type (approximant with space group R3m) is already formed at room temperature, while DyRhSn adopts the HP-CeRuSn type below 280 K. TmRhSn and LuRhSn show incommensurate modulated variants with superspace groups P31m(1/3; 1/3; γ) 000 (No. 157.1.23.1) (γ = 3/8 for TmRhSn and γ = 2/5 for LuRhSn). The driving force for superstructure formation (modulation) is a strengthening of Rh–Sn bonding. The modulation is expressed in a 119Sn Mössbauer spectrum of DyRhSn at 78 K through line broadening.

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