A Wide-Range Variation-Resilient Physically Unclonable Function in 28 nm

2020 ◽  
Vol 55 (3) ◽  
pp. 817-825
Author(s):  
Zhen-Yu Liang ◽  
Hao-Hsuan Wei ◽  
Tsung-Te Liu
Keyword(s):  
Wide Range ◽  
Range Variation ◽  
28 Nm

A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications

2020 ◽  
pp. 1-18
Author(s):  
Florent Torres ◽  
Eric Kerhervé ◽  
Andreia Cathelin ◽  
Magali De Matos
Keyword(s):  
Power Amplifier ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Fully Depleted ◽  
Technology Roadmap ◽  
Wide Range ◽  
28 Nm ◽  
Soi Cmos

Abstract This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) technology and targeting SoC implementation for 5 G applications. Fine-grain wide range power control with more than 10 dB tuning range is enabled by body biasing feature while the design improves voltage standing wave ratio (VSWR) robustness, stability and reverse isolation by using optimized 90° hybrid couplers and capacitive neutralization on both stages. Maximum power gain of 32.6 dB, PAEmax of 25.5% and Psat of 17.9 dBm are measured while robustness to industrial temperature range and process spread is demonstrated. Temperature-induced performance variation compensation, as well as amplitude-to-phase modulation (AM-PM) optimization regarding output power back-off, are achieved through body-bias node. This PA exhibits an International Technology Roadmap for Semiconductors figure of merit (ITRS FOM) of 26 925, the highest reported around 30 GHz to authors' knowledge.

scholarly journals Halogen Bonding in the Complexes of Brominated Electrophiles with Chloride Anions: From a Weak Supramolecular Interaction to a Covalent Br–Cl Bond

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1075
Author(s):  
Cody Loy ◽  
Matthias Zeller ◽  
Sergiy V. Rosokha
Keyword(s):  
Bond Strength ◽  
Halogen Bond ◽  
Covalent Bond ◽  
Halogen Bonding ◽  
Halogen Bonds ◽  
Nucleophilic Reaction ◽  
X Ray ◽  
Wide Range ◽  
Judicious Choice ◽  
Range Variation

The wide-range variation of the strength of halogen bonds (XB) not only facilitates a variety of applications of this interaction, but it also allows examining the relation (and interconversion) between supramolecular and covalent bonding. Herein, the Br…Cl halogen bonding in a series of complexes of bromosubstituted electrophiles (R-Br) with chloride anions were examined via X-ray crystallographic and computational methods. Six co-crystals showing such bonding were prepared by evaporation of solutions of R-Br and tetra-n-propylammonium chloride or using Cl− anions released in the nucleophilic reaction of 1,4-diazabicyclo[2.2.2]octane with dichloromethane in the presence of R-Br. The co-crystal comprised networks formed by 3:3 or 2:2 halogen bonding between R-Br and Cl−, with the XB lengths varying from 3.0 Å to 3.25 Å. Analysis of the crystallographic database revealed examples of associations with substantially longer and shorter Br…Cl separations. DFT computations of an extended series of R–Br…Cl− complexes confirmed that the judicious choice of brominated electrophile allows varying halogen Br…Cl bond strength and length gradually from the values common for the weak intermolecular complexes to that approaching a fully developed covalent bond. This continuity of halogen bond strength in the experimental (solid-state) and calculated associations indicates a fundamental link between the covalent and supramolecular bonding.

scholarly journals Translocation of cyanogenic glycosides in rubber tree crown clones resistant to South American leaf blight

2012 ◽  
Vol 47 (7) ◽  
pp. 906-912 ◽  
Author(s):  
Larissa Alexandra Cardoso Moraes ◽  
Adônis Moreira ◽  
Everton Rabelo Cordeiro ◽  
Vicente Haroldo de Figueiredo Moraes
Keyword(s):  
Rubber Tree ◽  
Leaf Blight ◽  
South American ◽  
Cyanogenic Glycosides ◽  
Tree Crown ◽  
Tissue Layer ◽  
Wide Range ◽  
Cyanogenic Potential ◽  
Range Variation

The objective of this work was to assess the possible transport of cyanogenic glycosides from leaves of rubber tree crown clones (Hevea spp.) resistant to South American leaf blight to the trunk of the panel clones in which they are grafted. The cyanogenic potential (HCNp) of the crown clones was determined in the trunk bark, at different distances from the cambium, and its gradient was evaluated along the trunk. The correlation between the HCNp of the crown leaves and that of the trunk bark was also evaluated. HCNp determined in leaves showed a wide range variation in the species studied as crown clones, with the lowest values registered in H. nitida clones, and the highest ones in H. rigidifolia. In the trunk bark, the tissue layer nearer the cambium showed higher HCNp values. A positive basipetal gradient was observed along the trunk, i.e., there was an increase in HCNp from the apex toward the base. Although the grafted crowns influence the cyanogenic potential of the trunk bark of panel clones, the absence of correlation between the HCNp of the leaves and trunk bark indicates that the crown is not the main source of the cyanogenic glycosides found in the trunk.

Recent Applications of High Resolution Electron Microscopy to Crystalline Arrays of Virus Particles

1978 ◽  
Vol 36 (3) ◽  
pp. 470-482 ◽  
Author(s):  
R.W. Horne
Keyword(s):  
Electron Microscopy ◽  
Image Processing ◽  
Analytical Techniques ◽  
Staining Technique ◽  
High Resolution Electron Microscopy ◽  
Optical Diffraction ◽  
Full Potential ◽  
Virus Particles ◽  
Resolution Electron ◽  
Wide Range

The technique of surrounding virus particles with a neutralised electron dense stain was described at the Fourth International Congress on Electron Microscopy, Berlin 1958 (see Home & Brenner, 1960, p. 625). For many years the negative staining technique in one form or another, has been applied to a wide range of biological materials. However, the full potential of the method has only recently been explored following the development and applications of optical diffraction and computer image analytical techniques to electron micrographs (cf. De Hosier & Klug, 1968; Markham 1968; Crowther et al., 1970; Home & Markham, 1973; Klug & Berger, 1974; Crowther & Klug, 1975). These image processing procedures have allowed a more precise and quantitative approach to be made concerning the interpretation, measurement and reconstruction of repeating features in certain biological systems.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Application of TEM to Deformation, Wear, and Fracture of Ceramics

1974 ◽  
Vol 32 ◽  
pp. 472-473
Author(s):  
B. J. Hockey
Keyword(s):  
Wear Resistance ◽  
High Temperature ◽  
Mechanical Behavior ◽  
Brittle Materials ◽  
High Temperature Strength ◽  
Wide Range ◽  
Corrosive Environments ◽  
Further Development

Ceramics, such as Al2O3 and SiC have numerous current and potential uses in applications where high temperature strength, hardness, and wear resistance are required often in corrosive environments. These materials are, however, highly anisotropic and brittle, so that their mechanical behavior is often unpredictable. The further development of these materials will require a better understanding of the basic mechanisms controlling deformation, wear, and fracture.The purpose of this talk is to describe applications of TEM to the study of the deformation, wear, and fracture of Al2O3. Similar studies are currently being conducted on SiC and the techniques involved should be applicable to a wide range of hard, brittle materials.

Observation of Atom Rows in Thorium Pyromellitate Using a Field Emission STEM

1977 ◽  
Vol 35 ◽  
pp. 80-81
Author(s):  
H. Todokoro ◽  
S. Nomura ◽  
T. Komoda
Keyword(s):  
Field Emission ◽  
Amorphous Carbon ◽  
Carbon Film ◽  
Dark Field Image ◽  
Dark Field ◽  
Amorphous Carbon Film ◽  
Atomic Size ◽  
Wide Range ◽  
A Chain

It is interesting to observe polymers at atomic size resolution. Some works have been reported for thorium pyromellitate by using a STEM (1), or a CTEM (2,3). The results showed that this polymer forms a chain in which thorium atoms are arranged. However, the distance between adjacent thorium atoms varies over a wide range (0.4-1.3nm) according to the different authors.The present authors have also observed thorium pyromellitate specimens by means of a field emission STEM, described in reference 4. The specimen was prepared by placing a drop of thorium pyromellitate in 10-3 CH3OH solution onto an amorphous carbon film about 2nm thick. The dark field image is shown in Fig. 1A. Thorium atoms are clearly observed as regular atom rows having a spacing of 0.85nm. This lattice gradually deteriorated by successive observations. The image changed to granular structures, as shown in Fig. 1B, which was taken after four scanning frames.

Development of a conical anode Fe-gun for low voltage SEM

1988 ◽  
Vol 46 ◽  
pp. 978-979
Author(s):  
T. Miyokawa ◽  
S. Norioka ◽  
S. Goto
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Low Voltage ◽  
Irradiation Damage ◽  
Cold Cathode ◽  
Virtual Source ◽  
Source Position ◽  
Electrostatic Lens ◽  
Electrostatic Lenses ◽  
Wide Range

Field emission SEMs (FE-SEMs) are becoming popular due to their high resolution needs. In the field of semiconductor product, it is demanded to use the low accelerating voltage FE-SEM to avoid the electron irradiation damage and the electron charging up on samples. However the accelerating voltage of usual SEM with FE-gun is limited until 1 kV, which is not enough small for the present demands, because the virtual source goes far from the tip in lower accelerating voltages. This virtual source position depends on the shape of the electrostatic lens. So, we investigated several types of electrostatic lenses to be applicable to the lower accelerating voltage. In the result, it is found a field emission gun with a conical anode is effectively applied for a wide range of low accelerating voltages.A field emission gun usually consists of a field emission tip (cold cathode) and the Butler type electrostatic lens.

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