Micron-Level Actuators for Thermal Management of Microelectronic Devices

2007 ◽  
Author(s):  
Nurhak Erbas ◽  
Oktay Baysal
Keyword(s):  
Thermal Management ◽  
Power Dissipation ◽  
Transfer Rate ◽  
Operating Temperature ◽  
Electronic Devices ◽  
Synthetic Jet ◽  
Two Dimensional ◽  
Microelectronic Devices ◽  
Higher Power ◽  
Membrane Oscillations

Failure rates of electronic equipment depend on the operating temperature. Although demand for more effective cooling of electronic devices has increased in the last decades because of the microminiaturization in device sizes accompanied by higher power dissipation levels, there is still a challenge for engineers to attain improved reliability of thermal management for intermediate and low-heat-flux systems. In the present study, an innovative alternative method is proposed and a computational parametric study has been conducted. A single microchip is placed in a two-dimensional channel. Different synthetic jet configurations are designed as actuators in order to investigate their effectiveness for thermal management. The effect is that the actuator enhances mixing by imparting momentum to the channel flow thus manipulating the temperature field in a positive manner. The best control is achieved when the actuator is placed midway of the chip length and increasing the throat height. Also, using nozzle-like throat geometry increases the heat transfer rate from the microchip surface. Doubling the number of the actuators, optimally placing them, and phasing their membrane oscillations all improve the cooling.

Thermal Issues in Next Generation Integrated Circuits

2003 ◽  
Author(s):  
Siva Gurrum ◽  
Shivesh Suman ◽  
Yogendra Joshi ◽  
Andrei Fedorov
Keyword(s):  
Integrated Circuits ◽  
Thermal Management ◽  
Power Dissipation ◽  
High Performance ◽  
Electronic Devices ◽  
Heat Removal ◽  
Current Generation ◽  
Fundamental Limits ◽  
Convection Boundary ◽  
And Performance

Effective cooling of electronic chips is crucial for reliability and performance of electronic devices. Steadily increasing power dissipation in both devices and interconnects motivate the investigation of chip-centric thermal management as opposed to traditional package-centric solutions. In this work, we explore the fundamental limits for heat removal from a model chip for various configurations. Temperature rise when the chip is embedded in an infinite solid is computed for different thermal conductivities of the medium to pin down the best that can be achieved with conduction based thermal management. Next, a chip attached to a spreader plate with convection boundary condition on top was considered. A brief review of interface thermal resistances and partitioning of overall thermal resistance is presented for current generation microprocessors. Based upon the analysis it is concluded that far-term cooling solutions might necessitate integration with chip/interconnect-stack to meet the challenges. In addition, this would require concurrent thermal and electrical design/fabrication of future high-performance microprocessors.

scholarly journals Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1471
Author(s):  
Kun Yang ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Wenlong Yu ◽  
Tao Han
Keyword(s):  
Power Dissipation ◽  
Large Scale ◽  
Electronic Devices ◽  
Charge Storage ◽  
Two Dimensional ◽  
Large Scale Preparation ◽  
Two Dimensional Materials ◽  
Non Volatile Memory ◽  
Scale Preparation ◽  
Volatile Memory

Two-dimensional materials with atomic thickness have become candidates for wearable electronic devices in the future. Graphene and transition metal sulfides have received extensive attention in logic computing and sensing applications due to their lower power dissipation, so that their processes have been relatively mature for large-scale preparation. However, there are a few applications of two-dimensional materials in storage, which is not in line with the development trend of integration of storage and computing. Here, a charge storage quasi-non-volatile memory with a lanthanum incorporation high-k dielectric for next-generation memory devices is proposed. Thanks to the excellent electron capture capability of LaAlO3, the MoS2 memory exhibits a very comprehensive information storage capability, including robust endurance and ultra-fast write speed of 1 ms approximately. It is worth mentioning that it exhibits a long-term stable charge storage capacity (refresh time is about 1000 s), which is 105 times that of the dynamic random access memory (refresh time is on a milliseconds timescale) so that the unnecessary power dissipation greatly reduces caused by frequent refresh. In addition, its simple manufacturing process makes it compatible with various current two-dimensional electronic devices, which will greatly promote the integration of two-dimensional electronic computing.

scholarly journals A High-Gain CNTFET-Based LNA Developed Using a Compact Design-Oriented Device Model

Electronics ◽  
2021 ◽  
Vol 10 (22) ◽  
pp. 2835
Author(s):  
Paolo Crippa ◽  
Giorgio Biagetti ◽  
Claudio Turchetti ◽  
Laura Falaschetti ◽  
Davide Mencarelli ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
High Gain ◽  
Superior Performance ◽  
Device Model ◽  
Higher Power ◽  
Rf Devices ◽  
Compact Design

Recently, carbon nanotube field-effect transistors (CNTFETs) have attracted wide attention as promising candidates for components in the next generation of electronic devices. In particular CNTFET-based RF devices and circuits show superior performance to those built with silicon FETs since they are able to obtain higher power-gain and cut-off frequency at lower power dissipation. The aim of this paper is to present a compact, design-oriented model of CNTFETs that is able to ease the development of a complete amplifier. As a case study, the detailed design of a high-gain CNTFET-based broadband inductorless LNA is presented.

AUTONOMOUS HEAT SUPPORT SYSTEM OF ELECTRONIC BLOCKS OF SPACE APPLIANCES

2018 ◽  
pp. 72-78
Author(s):  
A. V. Gorbunov ◽  
Yu. A. Zhukov ◽  
E. V. Korotkov ◽  
A. V. Lekanov ◽  
V. G. Porpylev ◽  
...  
Keyword(s):  
Thermal Regime ◽  
Autonomous System ◽  
Supply Voltage ◽  
Operating Temperature ◽  
Electronic Devices ◽  
Space Technology ◽  
Structural Scheme ◽  
Spacecraft Design ◽  
Temperature Controlled ◽  
Operating Temperature Range

The vast majority of electronic devices on-Board Russian spacecraft is placed on a temperature-controlled mounting surface is ON, however, in some tasks there is a necessity to place a separate electronic units out thermostated panels on remote spacecraft design. The article presents an autonomous system of providing thermal regime of electronic blocks of spacecraft and objects of space technology that require maintaining the operating temperature and are unable to be installed on the thermostatic landing surfaces of spacecraft. The proposed autonomous system of providing thermal regime can operate autonomously in the extended operating temperature range of the installation surface from -80 to +80 °C when the supply voltage changes in the range from 75 to 550% of the nominal value. The review of the existing solutions is presented, the substantiation of the proposed decision is given, the structural scheme of autonomous system of providing thermal regime is given and its description and an example of application is given.

scholarly journals A thin, deformable, high-performance supercapacitor implant that can be biodegraded and bioabsorbed within an animal body

2021 ◽  
Vol 7 (2) ◽  
pp. eabe3097
Author(s):  
Hongwei Sheng ◽  
Jingjing Zhou ◽  
Bo Li ◽  
Yuhang He ◽  
Xuetao Zhang ◽  
...  
Keyword(s):  
High Performance ◽  
Electronic Devices ◽  
Form Factors ◽  
Time Frame ◽  
Water Soluble ◽  
Two Dimensional ◽  
Medical Electronics ◽  
Thin Structure ◽  
Shed Light

It has been an outstanding challenge to achieve implantable energy modules that are mechanically soft (compatible with soft organs and tissues), have compact form factors, and are biodegradable (present for a desired time frame to power biodegradable, implantable medical electronics). Here, we present a fully biodegradable and bioabsorbable high-performance supercapacitor implant, which is lightweight and has a thin structure, mechanical flexibility, tunable degradation duration, and biocompatibility. The supercapacitor with a high areal capacitance (112.5 mF cm−2 at 1 mA cm−2) and energy density (15.64 μWh cm−2) uses two-dimensional, amorphous molybdenum oxide (MoOx) flakes as electrodes, which are grown in situ on water-soluble Mo foil using a green electrochemical strategy. Biodegradation behaviors and biocompatibility of the associated materials and the supercapacitor implant are systematically studied. Demonstrations of a supercapacitor implant that powers several electronic devices and that is completely degraded after implantation and absorbed in rat body shed light on its potential uses.

scholarly journals Exfoliation in a low boiling point solvent and electrochemical applications of MoO3

2020 ◽  
Vol 11 ◽  
pp. 662-670
Author(s):  
Matangi Sricharan ◽  
Bikesh Gupta ◽  
Sreejesh Moolayadukkam ◽  
H S S Ramakrishna Matte
Keyword(s):  
Energy Storage ◽  
Electrode Material ◽  
Electronic Devices ◽  
High Specific Capacitance ◽  
Two Dimensional ◽  
Energy Storage Devices ◽  
Intrinsic Nature ◽  
Storage Devices ◽  
Scan Rate ◽  
First Time

MoO3 is a versatile two-dimensional transition metal oxide having applications in areas such as energy storage devices, electronic devices and catalysis. To efficiently utilize the properties of MoO3 arising from its two-dimensional nature exfoliation is necessary. In this work, the exfoliation of MoO3 is carried out in 2-butanone for the first time. The achieved concentration of the dispersion is about 0.57 mg·mL−1 with a yield of 5.7%, which are the highest values reported to date. These high values of concentration and yield can be attributed to a favorable matching of energies involved in exfoliation and stabilization of MoO3 nanosheets in 2-butanone. Interestingly, the MoO3 dispersion in 2-butanone retains its intrinsic nature even after exposure to sunlight for 24 h. The composites of MoO3 nanosheets were used as an electrode material for supercapacitors and showed a high specific capacitance of 201 F·g−1 in a three-electrode configuration at a scan rate of 50 mV·s−1.

Heat Transfer and Thermal Stress Analysis of an Optoelectronic Package

1991 ◽  
Vol 113 (3) ◽  
pp. 258-262 ◽  
Author(s):  
J. G. Stack ◽  
M. S. Acarlar
Keyword(s):  
Heat Transfer ◽  
Thermal Management ◽  
Power Dissipation ◽  
Point Of View ◽  
Optical Data ◽  
Data Link ◽  
Element Analysis ◽  
Thermally Induced ◽  
Temperature Changes ◽  
Induced Stresses

The reliability and life of an Optical Data Link transmitter are inversely related to the temperature of the LED. It is therefore critical to have efficient packaging from the point of view of thermal management. For the ODL® 200H devices, it is also necessary to ensure that all package seals remain hermetic throughout the stringent military temperature range requirements of −65 to +150°C. For these devices, finite element analysis was used to study both the thermal paths due to LED power dissipation and the thermally induced stresses in the hermetic joints due to ambient temperature changes

Sign in / Sign up

Export Citation Format

Share Document