Evaluation of Spiral Inductors Embedded in Low Temperature Co-Fired Ceramic Substrates

2005 ◽  
Author(s):  
Woon Choi ◽  
Shintaro Ono ◽  
Seiichiro Yoshida ◽  
Hajime Tomokage
Keyword(s):  
Low Temperature ◽  
High Frequency ◽  
Experimental Result ◽  
Ceramic Substrates ◽  
High Frequency Structure Simulator ◽  
S Parameters ◽  
Test Elements ◽  
Spiral Inductors ◽  
Process Measurements ◽  
Q Factors

In order to obtain full information on the high frequency performance of embedded passive elements, we design test elements group (TEG) substrates and compare the simulation result with measured data. S-parameters of spiral inductors embedded in low temperature co-fired ceramic (LTCC) substrates are simulated using high frequency structure simulator (HFSS), microwave studio (MWS) and advanced design simulator (ADS). Then effective inductance and Q factors are calculated from S-parameters after de-embedding process. Measurements of S-parameters are performed using a vector network analyzer in the frequency range up to 15 GHz. The simulation result with dimensional data measured by laser microscope and X-lay microscope is in good agreement with the experimental result. It is suggested that the simulation results can be applied to the design of system-in-a-package (SiP) substrate directly without making TEG.

Development of High Permeability Core Materials for Embeddable Inductors in Flexible Organic Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
C. K. Liu ◽  
P. L. Cheng ◽  
S. Y. Y. Leung ◽  
T. W. Law ◽  
D. C. C. Lam
Keyword(s):  
Low Temperature ◽  
Sol Gel ◽  
Circuit Board ◽  
Organic Substrates ◽  
Circuit Boards ◽  
High Permeability ◽  
Electrical Measurements ◽  
Different Temperatures ◽  
Spiral Inductors ◽  
Ceramic Tape

AbstractCapacitors, resistors and inductors are surface mounted components on circuit boards, which occupy up to 70% of the circuit board area. For selected applications, these passives are packaged inside green ceramic tape substrates and sintered at temperatures over 700°C in a co-fired process. These high temperature processes are incompatible with organic substrates, and low temperature processes are needed if passives are to be embedded into organic substrates. A new high permeability dual-phase Nickel Zinc Ferrite (DP NZF) core fabricated using a low temperature sol-gel route was developed for use in embedded inductors in organic substrates. Crystalline NZF powder was added to the sol-gel precursor of NZF. The solution was deposited onto the substrates as thin films and heat-treated at different temperatures. The changes in the microstructures were characterized using XRD and SEM. Results showed that addition of NZF powder induced low temperature transformation of the sol-gel NZF phase to high permeability phase at 250°C, which is approximately 350°C lower than transformation temperature for pure NZF sol gel films. Electrical measurements of DP NZF cored two-layered spiral inductors indicated that the inductance increased by three times compared to inductors without the DP NZF cores. From microstructural observations, the increase is correlated with the changes in microstructural connectivity of the powder phase.

Separation of Water-Oil Emulsion Using Polyethersulfone Membranes Treated With High-Frequency Low-Temperature Plasma

2019 ◽  
Vol 23 (3) ◽  
pp. 746-754
Author(s):  
Dinar Dilshatovich Fazullin ◽  
Gennady Vitalievich Mavrin ◽  
Vladislav Olegovich Dryakhlov ◽  
Ildar Gilmanovich Shaikhiev ◽  
Irek Rashatovich Nizameyev
Keyword(s):  
Low Temperature ◽  
High Frequency ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Oil Emulsion

scholarly journals Couplinator: A simple computational tool for synthesis of multi-section coupled-line filter based on MPCM-TLM technique

2021 ◽  
pp. 1-10
Author(s):  
E. Faghand ◽  
S. Karimian ◽  
E. Mehrshahi ◽  
N. Karimian
Keyword(s):  
Comparative Analysis ◽  
Transmission Line ◽  
High Frequency ◽  
Computational Tool ◽  
Cad Tools ◽  
Coupled Line ◽  
High Frequency Structure Simulator ◽  
Transmission Line Method ◽  
Set Up ◽  
Planar Circuit

Abstract A new simple computational tool is proposed for the synthesis of multi-section coupled-line filters based on combined modified planar circuit method (MPCM) and transmission line method (TLM) analysis, referred to as MPCM-TLM. Due to its fundamentally simple architecture, the presented tool offers significantly faster optimization of coupled-line filters – for exactly the same initial simulation set-up – than other costly commercially-available tools, giving equally reliable results. Validity and accuracy of the proposed tool have been verified through the design of 3rd, 5th, and 7th order coupled-line filters and comparative analysis between results obtained from the proposed approach and the high-frequency structure simulator. A remarkable 99% time reduction in the analysis is recorded in the case of 7th order filter using the proposed tool, for almost identical results to HFSS. Therefore, it can be confidently claimed that the proposed technique can be used as a reliable alternative to existing complex, costly, processor-intensive CAD tools.

scholarly journals Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations

Energies ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1495
Author(s):  
Loris Pace ◽  
Nadir Idir ◽  
Thierry Duquesne ◽  
Jean-Claude De Jaeger
Keyword(s):  
High Frequency ◽  
Printed Circuit Board ◽  
Power Converters ◽  
Calibration Procedure ◽  
Circuit Board ◽  
Design System ◽  
Switching Speed ◽  
Parasitic Inductance ◽  
Frequency Converters ◽  
S Parameters

Due to the high switching speed of Gallium Nitride (GaN) transistors, parasitic inductances have significant impacts on power losses and electromagnetic interferences (EMI) in GaN-based power converters. Thus, the proper design of high-frequency converters in a simulation tool requires accurate electromagnetic (EM) modeling of the commutation loops. This work proposes an EM modeling of the parasitic inductance of a GaN-based commutation cell on a printed circuit board (PCB) using Advanced Design System (ADS®) software. Two different PCB designs of the commutation loop, lateral (single-sided) and vertical (double-sided) are characterized in terms of parasitic inductance contribution. An experimental approach based on S-parameters, the Cold FET technique and a specific calibration procedure is developed to obtain reference values for comparison with the proposed models. First, lateral and vertical PCB loop inductances are extracted. Then, the whole commutation loop inductances including the packaging of the GaN transistors are determined by developing an EM model of the device’s internal parasitic. The switching waveforms of the GaN transistors in a 1 MHz DC/DC converter are given for the different commutation loop designs. Finally, a discussion is proposed on the presented results and the development of advanced tools for high-frequency GaN-based power electronics design.

Comb Shaped Triple Band Microstrip Antenna for Wireless Communication

2021 ◽  
Vol 9 (4) ◽  
pp. 379-382
Keyword(s):  
Dielectric Constant ◽  
Wireless Communication ◽  
High Frequency ◽  
Microstrip Antenna ◽  
Return Loss ◽  
Experimental Results ◽  
High Frequency Structure Simulator ◽  
Frequency Structure ◽  
Triple Band

A comb shaped microstrip antenna is designed by loading rectangular slots on the patch of the antenna. The antenna resonating at three different frequencies f1 = 5.35 GHz, f2 = 6.19 GHz and f3= 8.15 GHz. The designed antenna is simulated on High Frequency Structure Simulator software [HFSS] and the antenna is fabricated using substrate glass epoxy with dielectric constant 4.4 having dimension of 8x4x0.16 cms. The antenna shows good return loss, bandwidth and VSWR. Experimental results are observed using Vector Analyzer MS2037C/2.

LOW-TEMPERATURE ION-PLASMA DEPOSITION TECHNOLOGY OF NANOSTRUCTURED FILMS OF ALUMINUM AND BORON NITRIDES

2021 ◽  
Vol 56 ◽  
pp. 97-107
Author(s):  
M. S. Zayats ◽  
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
High Frequency ◽  
Plasma Deposition ◽  
Heating Temperature ◽  
Substrate Heating ◽  
Ion Plasma ◽  
Technological Cycle ◽  
Physical And Chemical

A low-temperature (substrate heating temperature up to 400 °C) ion-plasma technology for the formation of nanostructured AlN and BN films by the method of high-frequency reactive magnetron sputtering of the corresponding targets has been developed (the modernized installation "Cathode-1M"), which has in its technological cycle the means of physical and chemical modification, which allow to purposefully control the phase composition, surface morphology, size and texture of nanocrystalline films. The possibility of using the method of high-frequency magnetron sputtering for deposition of transparent hexagonal BN films in the nanoscale state on quartz and silicon substrates is shown. Atomic force microscopy (AFM) has shown that AlN films can have an amorphous or polycrystalline surface with grain sizes of approximately 20-100 nm, with the height of the nanoparticles varying from 3 to 10 nm and the degree of surface roughness from 1 to 10 nm. It was found that the dielectric penetration of polycrystalline AlN films decreases from 10 to 3.5 at increased frequencies from 25 Hz to 1 MHz, and the peak tangent of the dielectric loss angle reaches 0.2 at 10 kHz. Such features indicate the existence of spontaneous polarization of dipoles in the obtained AlN films. Interest in dielectric properties in AlN / Si structures it is also due to the fact that there are point defects, such as nitrogen vacancies and silicon atoms, which diffuse from the silicon substrate during synthesis and play an important role in the dielectric properties of AlN during the formation of dipoles. The technology makes it possible, in a single technological cycle, to produce multilayer structures modified for specific functional tasks with specified characteristics necessary for the manufacture of modern electronics, optoelectronics and sensorics devices. It should also be noted that the technology of magnetron sputtering (installation "Cathode-1M") is highly productive, energetically efficient and environmentally friendly in comparison with other known technologies for creating semiconductor structures and allows them to be obtained with minimal changes in the technological cycle.

Analysis and Optimization of Conformal Patch Excited Wideband DRA of Several Shapes

Frequenz ◽  
2018 ◽  
Vol 72 (5-6) ◽  
pp. 197-208 ◽  
Author(s):  
Pramod Kumar ◽  
Santanu Dwari ◽  
Shailendra Singh ◽  
Ashok Kumar ◽  
N. K. Agrawal ◽  
...  
Keyword(s):  
Comparative Analysis ◽  
Frequency Spectrum ◽  
High Frequency ◽  
Unit Volume ◽  
Experimental Results ◽  
Impedance Bandwidth ◽  
High Frequency Structure Simulator ◽  
Triangular Shape ◽  
Operating Band ◽  
Peak Gain

AbstractIn this paper various shapes of DR antennas excited by common feed have been proposed and successfully implemented for wideband applications. Proposed structures are Hemispherical, Arrow-shaped and Triangular DRA, while common excited feed is inverted trapezoidal conformal patch. These shapes of DR offer significant optimization in several parameters such as impedance bandwidth, peak gain and bandwidth per unit volume of the antenna. By using inverted trapezoidal patch feed mechanism an impedance bandwidth (VSWR<2) of about 63 % for hemispherical shape, 66 % for arrow shape, and 72 % for triangular shape DRA has been achieved with maximum bandwidth per unit volume. Proposed wideband DRAs i. e. triangular, hemispherical, and arrow shapes of DR antennas cover almost complete C-band (4 GHz–8 GHz) frequency spectrum of microwave. The average peak gain within the operating band for hemispherical, arrow, and triangular shape DRA are about 5, 5.4, and 5.5 dB respectively. A comparative analysis of proposed structures for various antenna parameters has been analyzed by HFSS (High-Frequency Structure Simulator) and validated by experimental results.

scholarly journals Design of a Compact CPW-Fed Monopole Antenna With Asymmetrical Hexagonal Slot Loaded Ground Structure for C/X/Ku Band Applications

2020 ◽  
Vol 16 (1) ◽  
pp. 15-22
Author(s):  
Ajay Kumar Dwivedi ◽  
Brijesh Mishra ◽  
Vivek Singh ◽  
Pramod Narayan Tripathi ◽  
Ashutosh Kumar Singh
Keyword(s):  
High Frequency ◽  
Ground Plane ◽  
Directional Pattern ◽  
Ultra Wideband ◽  
Impedance Bandwidth ◽  
Ground Structure ◽  
High Frequency Structure Simulator ◽  
Performance Matrix ◽  
Novel Design ◽  
Ku Band

AbstractA novel design of ultra-wideband CPW-fed compact monopole patch antenna is presented in the article. The size of the antenna is 22 × 18 × 1.6 mm and it operates well over an ultra-wideband frequency range 4.86–13.66 GHz (simulated) and 4.93–13.54 GHz (measured) covering C, X and partial Ku band applications. The proposed design consists of a defected ground plane and U-shape radiating patch along with two square shape parasitic patches in order to achieve the ultra-wideband (UWB) operations. The performance matrix is validated through measured results that indicate the wide impedance bandwidth (93.2 %) with maximum gain of 4 dBi with nearly 95 % of maximum radiation efficiency; moreover, the 3D gain pattern manifests approximately omni-directional pattern of the proposed design. The prototype has been modelled using HFSS (High Frequency Structure Simulator-18) by ANSYS, fabricated and tested using vector network analyser E5071C.

scholarly journals MINKOWSKI LOOP ANTENNA FOR 5G MOBILE COMMUNICATION

2021 ◽  
Vol 5 (9) ◽  
Author(s):  
Debasish Dash ◽  
Mrunal A Marihal ◽  
Dr. H. V. Kumaraswamy ◽  
Dr K. Sreelakshmi
Keyword(s):  
High Frequency ◽  
System Capacity ◽  
Regular Pattern ◽  
Fractal Structures ◽  
High Frequency Structure Simulator ◽  
The Core ◽  
Fifth Generation ◽  
High System ◽  
4G Lte ◽  
Cellular Technology

5G or fifth generation of cellular technology, is the successor of 4G LTE. It focusses on high date rate, high system capacity cheaper cost. Although it is still a maturing technology, the countries around the world have already stared implementing of on experimented basis. Massive connectivity is at the core of 5G and thus aim to get different components around us connected to each other. The paper focusses on minkowski loops fractal structures till 2nd iteration making a simpler and cheaper antenna for 5G application of cellular technology. The main feature of this antenna is that it occupied the same space as a regular pattern antenna, but offers a far bigger length for radiation. The resonant frequency taken is 30GHz. The substrate taken is RT-Duriod 6006 with dielectric constant 6.45. The antenna has been designed, simulated and analyzed using the software high frequency structure simulator.

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