WHY CAN SMART CUT® CHANGE THE FUTURE OF MICROELECTRONICS?

2000 ◽  
Vol 10 (01) ◽  
pp. 131-146 ◽  
Author(s):  
A. J. AUBERTON-HERVÉ ◽  
MICHEL BRUEL
Keyword(s):  
Semiconductor Industry ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Silicon Dioxide Layer ◽  
Material Development ◽  
Amorphous Silicon Dioxide ◽  
New Material ◽  
The One ◽  
Monocrystalline Film ◽  
Deposition Techniques

Deposition techniques like chemical vapor deposition (CVD) offer to the semiconductor industry the initial flexibility to deposit thin films of key materials on many kinds of substrates. The homoepitaxy or hetroepitaxy techniques using CVD or molecular beam epitaxy (MBE) add the flexibility to get a pure monocrystalline thin film but with a major limitation: the starting substrate has to be monocrystalline. The missing technology has always been the one which allows the growth of a thin monocrystalline film on any kind of substrate. Hydrogen induced splitting (known today as Smart Cut®), discovered at the LETI laboratory in 1991, provides a unique opportunity to get crystalline layers on any kind of substrate. Therefore, a new tool is offered to the semiconductor industry, for new material developments and new structures. This technique is in use in production today on a first application: silicon-on-insulator (SOI) wafers which consist of a monocrystalline film of silicon on a thin amorphous silicon dioxide layer, on top of a silicon wafer. We will discuss the SOI application of the Smart Cut® technology and present other recently demonstrated breakthroughs in new material development, including SiC, compound semiconductor or 3D structures.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

Microstructures of SiC and Si3N4 with fibrous inclusions

1986 ◽  
Vol 44 ◽  
pp. 492-493
Author(s):  
N. J. Tighe ◽  
J. Sun ◽  
R.-M. Hu
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Crack Deflection ◽  
Fiber Bundles ◽  
High Temperature Strength ◽  
Graphite Fiber ◽  
Triple Junctions ◽  
Transmission Electron ◽  
Compact Graphite ◽  
Deposition Techniques

Particles of BN,and C are added in amounts of 1 to 40% to SiC and Si3N4 ceramics in order to improve their mechanical properties. The ceramics are then processed by sintering, hot-pressing and chemical vapor deposition techniques to produce dense products. Crack deflection at the particles can increase toughness. However the high temperature strength and toughness are determined byphase interactions in the environmental conditions used for testing. Examination of the ceramics by transmission electron microscopy has shown that the carbon and boron nitride particles have a fibrous texture. In the sintered aSiC ceramic the carbon appears as graphite fiber bundles in the triple junctions and as compact graphite particles within some grains. Examples of these inclusions are shown in Fig. 1A and B.

scholarly journals The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Caihong Li ◽  
Juntong Zhu ◽  
Wen Du ◽  
Yixuan Huang ◽  
Hao Xu ◽  
...  
Keyword(s):  
Communication Systems ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Large Area ◽  
Optical Signals ◽  
Metal Dichalcogenides ◽  
One Step ◽  
The One ◽  
Charge Carrier Trapping ◽  
Sharp Interfaces

AbstractMonolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

scholarly journals Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 136
Author(s):  
Yiingqi Shang ◽  
Hongquan Zhang ◽  
Yan Zhang
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Wet Etching ◽  
Silicon Dioxide Layer ◽  
Etching Depth ◽  
Deep Cavity ◽  
Mask Layer ◽  
Layer Composite

Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion.

Enhancement of Breakdown Voltage in SOI MOSFET Using Buried p-Type Silicon

2021 ◽  
Author(s):  
Deivakani M ◽  
Sumithra M.G ◽  
Anitha P ◽  
Jenopaul P ◽  
Priyesh P. Gandhi ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Impact Ionization ◽  
Semiconductor Industry ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Physical Models ◽  
Oxide Semiconductor ◽  
Soi Mosfet ◽  
P Type ◽  
Conventional Device

Abstract Semiconductor industry is still looking for the enhancement of breakdown voltage in Silicon on Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Thus, in this paper, heavy n-type doping below the channel is proposed for SOI MOSFET. Simulation of SOI MOSFET is carried out using 2D TCAD physical simulator. In the conventional device, with no p-type doping is used at the bottom silicon layer. While, in proposed device, p-type doping of 1×1018 cm-3 is used. Physical models are used in the simulation to achieve realistic performance. The models are mobility model, impact ionization model and ohmic contact model. Using TCAD simulation, electron/hole current density, impact generation, recombination and breakdown phenomena are analyzed. It is found that the proposed with p-type doping of 1×1018 cm-3 for SOI MOSFET yields high breakdown voltage. In contrast to conventional device, 20% improvement in breakdown voltage is achieved for proposed device.

scholarly journals Self-organizing Systems in the Light of the Arrows of Orderedness, Symmetry, and Entropy

1970 ◽  
Vol 2 (2) ◽  
pp. 63-73
Author(s):  
György Darvas
Keyword(s):  
Second Law Of Thermodynamics ◽  
Local Symmetry ◽  
Evolution Of The Universe ◽  
Global Evolution ◽  
New Material ◽  
New Interpretation ◽  
The One ◽  
Global And Local ◽  
The Universe ◽  
Matter Energy

The paper makes an attempt to resolve two conceptual mingling: (a) the mingling of the two interpretations of the concept of orderedness applied in statistical thermodynamics and in symmetrology, and (b) the mingling of two interpretations of evolution applied in global and local processes. In conclusion, it formulates a new interpretation on the relation of the emergence of new material qualities in selforganizing processes on the one hand, and the evolution of the universe, on the other. The process of evolution is a sequence of emergence of new material qualities by self-organization processes, which happen in negligible small segments of the universe. Although thermodynamics looks at the universe as a closed (isolated) system, this holds for its outside boundaries only, while the universe has many subsystems inside, which are not isolated (closed), since they are in a permanent exchange of matter, energy, etc. with their environment (with the rest of the universe) through their open boundaries. Any ";;emergence";; takes place, i.e., all new qualities come into being just in these small open segments of the universe. The conditions to apply the second law of thermodynamics are not present here. Therefore, global evolution of the universe is the consequence of local symmetry decreases, local decreases of orderedness, and possible local decreases of entropy.

Chemical-vapor-deposition growth and characterization of epitaxial 3C–SiC films on SOI substrates with thin silicon top layers

2001 ◽  
Vol 16 (1) ◽  
pp. 24-27 ◽  
Author(s):  
C. K. Moon ◽  
H. J. Song ◽  
J. K. Kim ◽  
J. H. Park ◽  
S. J. Jang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Significant Shift ◽  
Misfit Dislocations ◽  
Chemical Vapor Deposition Growth ◽  
Hydrogen Flow ◽  
Soi Substrates ◽  
Sic Films

Epitaxial 3C–SiC films were grown by chemical vapor deposition on the silicon-on-insulator (SOI) substrates with 20–75-nm-thick Si top layers. A relatively low growth temperature of 1150 °C and a reduced hydrogen flow rate of 1 lpm during the precarbonization process was necessary to preserve the SOI structure and thereby obtain high-quality SiC films. The transmission electron microscopy observation of the SiC/SOI structures revealed high density of misfit dislocations in the SiC film, but no dislocation within the top Si layer. The x-ray-diffraction results did not show any significant shift of the (400) SiC peak position among the SiC/Si and the SiC/SOI samples. This strongly suggests that the Si top layer is not deformed during the SiC/SOI growth and the strain within the 3C–SiC layer is not critically affected by substituting the Si substrate with the SOI substrate, even when the Si top layer is as thin as 20 nm.

scholarly journals Novel Synthesis of Core-Shell Biomaterials from Polymeric Filaments with a Bioceramic Coating for Biomedical Applications

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 283 ◽  
Author(s):  
Catalina-Andreea Dascalu ◽  
Florin Miculescu ◽  
Aura-Catalina Mocanu ◽  
Andreea Elena Constantinescu ◽  
Tudor Mihai Butte ◽  
...  
Keyword(s):  
Tissue Engineering ◽  
Biomedical Applications ◽  
Thermoplastic Polyurethane ◽  
Shell Structures ◽  
Core Shell ◽  
Bovine Bone ◽  
Technological Parameters ◽  
Material Development ◽  
Pull Out ◽  
New Material

Bone tissue engineering is constantly in need of new material development with improved biocompatibility or mechanical features closer to those of natural bone. Other important factors are the sustainability, cost, and origin of the natural precursors involved in the technological process. This study focused on two widely used polymers in tissue engineering, namely polylactic acid (PLA) and thermoplastic polyurethane (TPU), as well as bovine-bone-derived hydroxyapatite (HA) for the manufacturing of core-shell structures. In order to embed the ceramic particles on the polymeric filaments surface, the materials were introduced in an electrical oven at various temperatures and exposure times and under various pressing forces. The obtained core-shell structures were characterized in terms of morphology and composition, and a pull-out test was used to demonstrate the particles adhesion on the polymeric filaments structure. Thermal properties (modulated temperature and exposure time) and the pressing force’s influence upon HA particles’ insertion degree were evaluated. More to the point, the form variation factor and the mass variation led to the optimal technological parameters for the synthesis of core-shell materials for prospect additive manufacturing and regenerative medicine applications.

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