Selective deposition of p-type Cu2O or conductive Cu thin film at 180∘C in air on a quartz glass substrate: Development of an aqueous spray solution using two-compartment electrolysis system

2020 ◽  
Vol 13 (03) ◽  
pp. 2051012
Author(s):  
Alina Uusiku ◽  
Hiroki Nagai ◽  
Mitsunobu Sato
Keyword(s):  
Thin Film ◽  
Spray Coating ◽  
Particle Sizes ◽  
Tetraacetic Acid ◽  
Quartz Glass Substrate ◽  
Cu Complex ◽  
Spray Solution ◽  
Cu Thin Film ◽  
P Type ◽  
Electrolysis System

A conductive Cu thin film with a thickness of 170[Formula: see text]nm, electrical resistivity of 8.9(2) [Formula: see text][Formula: see text]cm and adhesion strength of 12(7) MPa was fabricated at 180∘C in air. The spray solutions were prepared by electrolyzing Cu electrodes in an aqueous solution of ammonium formate, and then by adding ethylenediamine-N, N, N[Formula: see text], N[Formula: see text]-tetraacetic acid (EDTA). The surface morphology image of resultant Cu thin film, observed by a field emission scanning electron microscope, revealed Cu grains with particle sizes of ca. [Formula: see text][Formula: see text]nm. It was indicated that the Cu complex containing EDTA ligand in the spray solution plays important roles to (1) provide enough amount of carbon atoms as a reducing agent for phase transition of its coordinated Cu[Formula: see text] to crystalline Cu0 and (2) prevent the product from oxidation under atmospheric O2 during spray coating.

scholarly journals Highly-Conductive and Well-Adhered Cu Thin Film Fabricated on Quartz Glass by Heat Treatment of a Precursor Film Obtained Via Spray-Coating of an Aqueous Solution Involving Cu(II) Complexes

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 352 ◽  
Author(s):  
Philipus Hishimone ◽  
Hiroki Nagai ◽  
Masato Morita ◽  
Tetsuo Sakamoto ◽  
Mitsunobu Sato
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Quartz Glass ◽  
Gas Flow ◽  
Spray Coating ◽  
Far Infrared ◽  
Infrared Region ◽  
Precursor Film ◽  
Cu Thin Film ◽  
Resultant Film

A Cu thin film on a quartz glass substrate was fabricated by a wet process involving heat-treatment of a precursor film spray-coated with an aqueous ammonia solution containing Cu(HCOO)2∙4H2O and Cu(II) complex of ethylenediamine-N,N,N′N′-tetraacetic acid. The precursor film that formed on the substrate at 180 °C in air was heat-treated at 350 °C and post annealed at 400 °C by placing an identical-sized glass on top, under Ar gas flow in a tubular furnace. X-ray diffraction pattern of the resultant film showed only peaks of Cu. The resultant film of 100 nm thickness has an adhesion strength and electrical resistivity of 37(7) MPa and 3.8(6) × 10−5 Ω cm, respectively. The images of atomic force and field-emission scanning-electron microscopies revealed a film of well-connected Cu grains with an average surface roughness of 11 nm. The reflectance of the thin film is more than 90% in the far-infrared region. The film’s chemical composition was also examined by using Auger electron spectroscopy.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

scholarly journals A Multi Objective Evolutionary Algorithm for the Parameters Extraction of Organic Thin Film Transistors Models

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 939
Author(s):  
Rosario Schiano Lo Moriello ◽  
Davide Ruggiero ◽  
Leopoldo Angrisani ◽  
Enzo Caputo ◽  
Francesco de Pandi ◽  
...  
Keyword(s):  
Thin Film ◽  
Evolutionary Algorithm ◽  
Design Stage ◽  
Model Parameters ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
Multi Objective ◽  
Application Fields ◽  
Channel Lengths ◽  
P Type

Thanks to their peculiar features, organic transistors are proving to be a valuable alternative to traditional semiconducting devices in several application fields; however, before releasing their exploitation, simulating their behaviour through adequate circuital models could be advisable during the design stage of electronic circuits and/or boards. Consequently, accurately extracting the parameter value of those models is fundamental to developing useful libraries for hardware design environments. To face the considered problem, the authors present a method based on successive application of Single- and Multi-Objective Evolutionary Algorithm for the optimal tuning of model parameters of organic transistors on thin film (OTFT). In particular, parameters are first roughly estimated to assure the best fit with the experimental transfer characteristics; the estimates are successively refined through the multi-objective strategy by also matching the values of the experimental mobility. The performance of the method has been assessed by estimating the parameters value of both P-type and N-type OTFTs characterized by different values of channel lengths; the obtained results evidence that the proposed method can obtain suitable parameters values for all the considered channel lengths.

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type

scholarly journals Nanocrystal-Loaded Micelles for the Enhanced In Vivo Circulation of Docetaxel

Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4481
Author(s):  
Meng Cheng ◽  
Qiaoming Liu ◽  
Tiantian Gan ◽  
Yuanying Fang ◽  
Pengfei Yue ◽  
...  
Keyword(s):  
Thin Film ◽  
Retention Time ◽  
Blood Circulation ◽  
Crystalline State ◽  
Circulation System ◽  
Particle Sizes ◽  
High Pressure Homogenization ◽  
Rapid Dissolution ◽  
Efficient Route

Prolonging in vivo circulation has proved to be an efficient route for enhancing the therapeutic effect of rapidly metabolized drugs. In this study, we aimed to construct a nanocrystal-loaded micelles delivery system to enhance the blood circulation of docetaxel (DOC). We employed high-pressure homogenization to prepare docetaxel nanocrystals (DOC(Nc)), and then produced docetaxel nanocrystal-loaded micelles (DOC(Nc)@mPEG-PLA) by a thin-film hydration method. The particle sizes of optimized DOC(Nc), docetaxel micelles (DOC@mPEG-PLA), and DOC(Nc)@mPEG-PLA were 168.4, 36.3, and 72.5 nm, respectively. The crystallinity of docetaxel was decreased after transforming it into nanocrystals, and the crystalline state of docetaxel in micelles was amorphous. The constructed DOC(Nc)@mPEG-PLA showed good stability as its particle size showed no significant change in 7 days. Despite their rapid dissolution, docetaxel nanocrystals exhibited higher bioavailability. The micelles prolonged the retention time of docetaxel in the circulation system of rats, and DOC(Nc)@mPEG-PLA exhibited the highest retention time and bioavailability. These results reveal that constructing nanocrystal-loaded micelles may be a promising way to enhance the in vivo circulation and bioavailability of rapidly metabolized drugs such as docetaxel.

Organic solar cells employing magnetron sputtered p-type nickel oxide thin film as the anode buffer layer

2010 ◽  
Vol 94 (12) ◽  
pp. 2332-2336 ◽  
Author(s):  
Sun-Young Park ◽  
Hye-Ri Kim ◽  
Yong-Jin Kang ◽  
Dong-Ho Kim ◽  
Jae-Wook Kang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Nickel Oxide ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
Oxide Thin Film ◽  
Anode Buffer Layer ◽  
P Type ◽  
Type Nickel ◽  
Nickel Oxide Thin Film

scholarly journals p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Daiki Itohara ◽  
Kazato Shinohara ◽  
Toshiyuki Yoshida ◽  
Yasuhisa Fujita
Keyword(s):  
Thin Film ◽  
Arc Discharge ◽  
Thin Film Transistor ◽  
Chamber Pressure ◽  
Zno Nanoparticle ◽  
Zno Nps ◽  
Lower Chamber ◽  
Hall Effect Measurements ◽  
Particle Process ◽  
P Type

Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested, resulting in clear rectifying characteristics. The possibility of particle-process-based ZnO-NP electronics was confirmed.

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