scholarly journals ULPD and CPTL Pull-Up Stages for Differential Cascode Voltage Switch Logic

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Avireni Srinivasulu ◽  
Madugula Rajesh
Keyword(s):  
Low Power ◽  
Propagation Delay ◽  
Vlsi Implementation ◽  
Model Parameters ◽  
Cmos Process ◽  
Ultra Low Power ◽  
Pass Transistor ◽  
Simulation Results ◽  
Parasitic Effects ◽  
Power Diode

Two new structures for Differential Cascode Voltage Switch Logic (DCVSL) pull-up stage are proposed. In conventional DCVSL structure, low-to-high propagation delay is larger than high-to-low propagation delay this could be brought down by using DCVSL-R. Promoting resistors in DCVSL-R structure increase the parasitic effects and unavoidable delay and it also occupies more area on the chip (Turker et al., 2011). In order to minimize these problems, a new Ultra-Low-Power Diode (ULPD) structures in place of resistors have been suggested. This provides the minimum parasitic effects and reduces area on the chip. Second proposed circuit uses Complementary Pass Transistor Logic (CPTL) structure, which provides complementary outputs. This contributes an alternate circuit for conventional DCVSL structure. The performances of the proposed circuits are examined using Cadence and the model parameters of a 180 nm CMOS process. The simulation results of these two circuits are compared and presented. These circuits are found to be suitable for VLSI implementation.

scholarly journals FAST LOW POWER FREQUENCY SYNTHESIS APPLICATIONS BY USING A DCVSL DELAY CELL

2015 ◽  
pp. 220-225
Author(s):  
N. KUMAR BABU ◽  
P. SASIBALA
Keyword(s):  
Low Power ◽  
High Speed ◽  
Schmitt Trigger ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Model Parameters ◽  
Cmos Process ◽  
Ultra Low Power ◽  
Delay Cell ◽  
Parasitic Effects

In this paper, we proposed two new structures for differential cascode voltage switch logic (DCVSL) pull-up stage. In conventional DCVSL structure these lies a drawback i.e. low-to-high propagation delay is larger than high-to-low propagation delay which could be reduced by using DCVSL-R. Using resistors in DCVSL-R structure, parasitic effects are coming into picture and it occupies more area on the chip [1]. To minimize these problems we propose a new Ultra Low Power Diode (ULPD) structures in place of resistors. This provides the minimum parasitic effects and occupies less area on the chip. Second one uses Complementary Pass Transistor Logic (CPTL) structure, which provides complementary outputs. This is an alternate circuit for conventional DCVSL structure. The performances of the proposed circuits are examined using cadence and model parameters of a 180nm CMOS process. This simulation result of the two circuits is presented and is compared. These circuits are suitable for VLSI implementation. Secondly, we proposed two new CMOS Schmitt trigger circuits. These Schmitt trigger circuits are evaluated both analytically and numerically with the sources from proposed ULPD ring oscillators. The hysteresis curves of the circuits are presented. The Schmitt triggers introduced here are most suitable for high speed applications. The proposed circuits havebeen designed in TSMC-0.18μm 1.8v CMOS technology and analyzed using spectre from cadence Design systems at 50MHz and 103MHz.

scholarly journals Quasi-Adiabatic SRAM Based Silicon Physical Unclonable Function

2020 ◽  
Vol 1 (5) ◽  
Author(s):  
Yasuhiro Takahashi ◽  
Hiroki Koyasu ◽  
S. Dinesh Kumar ◽  
Himanshu Thapliyal
Keyword(s):  
Low Power ◽  
Radio Frequency Identification ◽  
Supply Voltage ◽  
Electronic Devices ◽  
Random Access ◽  
Cmos Process ◽  
Physical Unclonable Function ◽  
Ultra Low Power ◽  
Measurement Results ◽  
Simulation Results

Abstract Silicon Physical Unclonable Function (PUF) is a general hardware security primitive for security vulnerabilities. Recently, Quasi-adiabatic logic based physical unclonable function (QUALPUF) has ultra low-power dissipation; hence it is suitable to implement in low-power portable electronic devices such radio frequency identification (RFID) and wireless sensor networks (WSN), etc. In this paper, we present a design of 4-bit QUALPUF which is based on static random access memory (SRAM) for low-power portable electronic devices and then shows the post-layout simulation and measurement results. To evaluate the uniqueness and reliability, the 4-bit QUALPUF is implemented in 0.18 $$\upmu$$ μ m standard CMOS process with 1.8 V supply voltage. The 4-bit QUALPUF occupies 58.7$$\times$$ × 15.7 $$\upmu \mathrm {m}^{2}$$ μ m 2 of layout area. The post-layout simulation results illustrate that the uniqueness calculated from the inter-die HDs of the 4-bit QUALPUF is 47.58%, the average reliability is 95.10%, and the the energy dissipation is 29.73 fJ/cycle/bit. The functional measurement results of the fabricated chip are the same as the post-layout simulation results.

scholarly journals An Ultra-Low-Power K-Band 22.2 GHz-to-26.9 GHz Current-Reuse VCO Using Dynamic Back-Gate-Biasing Technique

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 889
Author(s):  
Xiaoying Deng ◽  
Peiqi Tan
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Back Gate ◽  
Ultra Low Power ◽  
Current Reuse ◽  
K Band

An ultra-low-power K-band LC-VCO (voltage-controlled oscillator) with a wide tuning range is proposed in this paper. Based on the current-reuse topology, a dynamic back-gate-biasing technique is utilized to reduce power consumption and increase tuning range. With this technique, small dimension cross-coupled pairs are allowed, reducing parasitic capacitors and power consumption. Implemented in SMIC 55 nm 1P7M CMOS process, the proposed VCO achieves a frequency tuning range of 19.1% from 22.2 GHz to 26.9 GHz, consuming only 1.9 mW–2.1 mW from 1.2 V supply and occupying a core area of 0.043 mm2. The phase noise ranges from −107.1 dBC/HZ to −101.9 dBc/Hz at 1 MHz offset over the whole tuning range, while the total harmonic distortion (THD) and output power achieve −40.6 dB and −2.9 dBm, respectively.

scholarly journals A 2.1 GHz, 210 μW, —189 dBc/Hz DCO with Ultra Low Power DCC Scheme

Electronics ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 805
Author(s):  
Shi Zuo ◽  
Jianzhong Zhao ◽  
Yumei Zhou
Keyword(s):  
Low Power ◽  
Current Efficiency ◽  
Phase Noise ◽  
Duty Cycle ◽  
Semiconductor Manufacturing ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Cmos Process ◽  
Ultra Low Power ◽  
Measured Phase

This article presents a low power digital controlled oscillator (DCO) with an ultra low power duty cycle correction (DCC) scheme. The DCO with the complementary cross-coupled topology uses the controllable tail resistor to improve the tail current efficiency. A robust duty cycle correction (DCC) scheme is introduced to replace self-biased inverters to save power further. The proposed DCO is implemented in a Semiconductor Manufacturing International Corporation (SMIC) 40 nm CMOS process. The measured phase noise at room temperature is −115 dBc/Hz at 1 MHz offset with a dissipation of 210 μμW at an oscillating frequency of 2.12 GHz, and the resulin figure-of-merit is s −189 dBc/Hz.

scholarly journals A 0.3 V Rail-to-Rail Ultra-Low-Power OTA with Improved Bandwidth and Slew Rate

2021 ◽  
Vol 11 (2) ◽  
pp. 19
Author(s):  
Francesco Centurelli ◽  
Riccardo Della Sala ◽  
Pietro Monsurrò ◽  
Giuseppe Scotti ◽  
Alessandro Trifiletti
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Process ◽  
Slew Rate ◽  
Large Signal ◽  
Output Stage ◽  
Ultra Low Power ◽  
Input Stage ◽  
Rail To Rail

In this paper, we present a novel operational transconductance amplifier (OTA) topology based on a dual-path body-driven input stage that exploits a body-driven current mirror-active load and targets ultra-low-power (ULP) and ultra-low-voltage (ULV) applications, such as IoT or biomedical devices. The proposed OTA exhibits only one high-impedance node, and can therefore be compensated at the output stage, thus not requiring Miller compensation. The input stage ensures rail-to-rail input common-mode range, whereas the gate-driven output stage ensures both a high open-loop gain and an enhanced slew rate. The proposed amplifier was designed in an STMicroelectronics 130 nm CMOS process with a nominal supply voltage of only 0.3 V, and it achieved very good values for both the small-signal and large-signal Figures of Merit. Extensive PVT (process, supply voltage, and temperature) and mismatch simulations are reported to prove the robustness of the proposed amplifier.

scholarly journals A 219-µW ultra-low power low-noise amplifier for IEEE 802.15.4 based battery powered, portable, wearable IoT applications

2021 ◽  
Vol 3 (4) ◽  
Author(s):  
S. Chrisben Gladson ◽  
Adith Hari Narayana ◽  
V. Thenmozhi ◽  
M. Bhaskar
Keyword(s):  
Low Power ◽  
Ieee 802.15.4 ◽  
Low Voltage ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Cmos Process ◽  
Process Technology ◽  
Ultra Low Power ◽  
Power Mode ◽  
Noise Amplifier

AbstractDue to the increased processing data rates, which is required in applications such as fifth-generation (5G) wireless networks, the battery power will discharge rapidly. Hence, there is a need for the design of novel circuit topologies to cater the demand of ultra-low voltage and low power operation. In this paper, a low-noise amplifier (LNA) operating at ultra-low voltage is proposed to address the demands of battery-powered communication devices. The LNA dual shunt peaking and has two modes of operation. In low-power mode (Mode-I), the LNA achieves a high gain ($$S21$$ S 21 ) of 18.87 dB, minimum noise figure ($${NF}_{min.}$$ NF m i n . ) of 2.5 dB in the − 3 dB frequency range of 2.3–2.9 GHz, and third-order intercept point (IIP3) of − 7.9dBm when operating at 0.6 V supply. In high-power mode (Mode-II), the achieved gain, NF, and IIP3 are 21.36 dB, 2.3 dB, and 13.78dBm respectively when operating at 1 V supply. The proposed LNA is implemented in UMC 180 nm CMOS process technology with a core area of $$0.40{\mathrm{ mm}}^{2}$$ 0.40 mm 2 and the post-layout validation is performed using Cadence SpectreRF circuit simulator.

Low Power Arithmetic Circuit Design for Multimedia Applications

2016 ◽  
pp. 252-282
Author(s):  
Senthil C. Pari
Keyword(s):  
Low Power ◽  
High Performance ◽  
Design Method ◽  
Propagation Delay ◽  
Arithmetic Circuit ◽  
Noise Margin ◽  
Binary Arithmetic ◽  
Pass Transistor ◽  
Circuit Family ◽  
Logic Level

The objective of this chapter is to describe the various designed arithmetic circuit for an application of multimedia circuit that can be used in a high-performance or mobile microprocessor with a particular set of optimisation criteria. The aim of this chapter is to describe the design method of binary arithmetic especially using by CMOS and Pass Transistor Logic technique. The pass transistor techniques are reduced the noise margin for small circuit, which can be explained in this chapter. This chapter further describe the types of arithmetic and its techniques. The technique design principle procedure should make the following decisions: circuit family (complementary static CMOS, pass-transistor, or Shannon Theorem based); type of arithmetic to be used. The decisions on the designed logic level significantly affect the propagation delay, area and power dissipation.

scholarly journals A Novel 8T Cell-Based Subthreshold Static RAM for Ultra-Low Power Platform Applications

Electronics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 928 ◽  
Author(s):  
Taehoon Kim ◽  
Sivasundar Manisankar ◽  
Yeonbae Chung
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Cost Effective ◽  
Operating Mode ◽  
Sleep Mode ◽  
Cmos Process ◽  
Operating Voltage ◽  
Cross Point ◽  
Ultra Low Power ◽  
Static Ram

Subthreshold SRAMs profit various energy-constrained applications. The traditional 6T SRAMs exhibit poor cell stability with voltage scaling. To this end, several 8T to 16T cell designs have been reported to improve the stability. However, they either suffer one of disturbances or consume large bit-area overhead. Furthermore, some cell options have a limited write-ability. This paper presents a novel 8T static RAM for reliable subthreshold operation. The cell employs a fully differential scheme and features cross-point access. An adaptive cell bias for each operating mode eliminates the read disturbance and enlarges the write-ability as well as the half-select stability in a cost-effective small bit-area. The bit-cell also can support efficient bit-interleaving. To verify the SRAM technique, a 32-kbit macro incorporating the proposed cell was implemented with an industrial 180 nm low-power CMOS process. At 0.4 V and room temperature, the proposed cell achieves 3.6× better write-ability and 2.6× higher dummy-read stability compared with the commercialized 8T cell. The 32-kbit SRAM successfully operates down to 0.21 V (~0.27 V lower than transistor threshold voltage). At its lowest operating voltage, the sleep-mode leakage power of entire SRAM is 7.75 nW. Many design results indicate that the proposed SRAM design, which is applicable to an aggressively-scaled process, might be quite useful in realizing cost-effective robust ultra-low voltage SRAMs.

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