scholarly journals Morphology and Phase Transformation of Copper/Aluminium Oxide Films

2018 ◽  
Vol 63 (5) ◽  
pp. 425 ◽  
Author(s):  
A. Panthawan ◽  
T. Kumpika ◽  
W. Sroila ◽  
E. Kantarak ◽  
W. Thongpan ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Atmospheric Pressure ◽  
Annealing Temperature ◽  
Aluminium Oxide ◽  
Single Step ◽  
Band Gaps ◽  
Oxygen Deficit ◽  
Annealing Temperatures ◽  
High Annealing ◽  
Deposited Films

Сopper aluminium oxide (CuAlO2) was successfully prepared within the single-step sparking process at the atmospheric pressure. The as-deposited films were then annealed at 400, 900, 1000, and 1100 ∘C in an oven. The results have shown that the annealing temperature has direct effect on the morphology, phase transformation, and optical properties. CuAlO2 in the delafossite phase was formed on the annealed films at temperatures higher than 900 ∘C. Furthermore, the energy band gaps of the annealed films were linearly increased from 3.3 to 3.8 eV with increasing the annealing temperature from 400 to 1100 ∘C due to a reduction of the oxygen deficit of films at high annealing temperatures.

EFFECT OF UNDERLAYERS ON THE STRESS OF CU FILMS PREPARED USING IONIZED METAL PLASMA

2002 ◽  
Vol 16 (01n02) ◽  
pp. 189-196 ◽  
Author(s):  
C. Y. LI ◽  
D. H. ZHANG ◽  
J. J. WU ◽  
D. X. QI ◽  
Y. QIAN ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Tensile Strain ◽  
Annealing Temperature ◽  
Abrupt Change ◽  
Lattice Mismatch ◽  
Cu Films ◽  
Annealing Temperatures ◽  
Metal Plasma ◽  
High Annealing ◽  
Cu Film

We investigated the effect of barrier metals, Ta, TaN and multi-stacked Ta/TaN , on the stress of the late deposited Cu film using ionised-metal plasma (IMP) technique. It was found that the stress of the IMP Cu film is sensitive to the strain or lattice mismatch of the barrier layer underneath. The nitrogen composition incorporated into Ta barrier layer causes tensile strain in the barrier and also the stress in the late deposited Cu film. The Cu film deposited on a multi-stacked Ta/TaN barrier showed the smallest stress due to relaxation of strain in the multi-layer barrier. In addition, the stress was also found sensitive to the annealing temperature. The abrupt change in the stress at high annealing temperatures coincides well with the formation of Cu 3 Si compound.

scholarly journals Effect of Annealing Temperature on CuInSe2/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
H. Abdullah ◽  
S. Habibi
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
Thin Film Solar Cells ◽  
X Ray ◽  
Annealing Temperatures ◽  
Pure Cu ◽  
Deposited Films

CuInSe2(CIS) thin films are successfully prepared by electron beam evaporation. Pure Cu, In, and Se powders were mixed and ground in a grinder and made into a pellet. The pallets were deposited via electron beam evaporation on FTO substrates and were varied by varying the annealing temperatures, at room temperature, 250°C, 300°C, and 350°C. Samples were analysed by X-ray diffractometry (XRD) for crystallinity and field-emission scanning electron microscopy (FESEM) for grain size and thickness. I-V measurements were used to measure the efficiency of the CuInSe2/ZnS solar cells. XRD results show that the crystallinity of the films improved as the temperature was increased. The temperature dependence of crystallinity indicates polycrystalline behaviour in the CuInSe2films with (1 1 1), (2 2 0)/(2 0 4), and (3 1 2)/(1 1 6) planes at 27°, 45°, and 53°, respectively. FESEM images show the homogeneity of the CuInSe2formed. I-V measurements indicated that higher annealing temperatures increase the efficiency of CuInSe2solar cells from approximately 0.99% for the as-deposited films to 1.12% for the annealed films. Hence, we can conclude that the overall cell performance is strongly dependent on the annealing temperature.

Effect of Annealing Temperature on Mechanical Properties of Cold Drawn Pearlitic Steel Wires

2006 ◽  
Vol 118 ◽  
pp. 31-34 ◽  
Author(s):  
Won Jong Nam ◽  
Hyung Rak Song ◽  
Kyung Tae Park
Keyword(s):  
Mechanical Properties ◽  
Tensile Strength ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Pearlitic Steel ◽  
High Annealing Temperature ◽  
Annealing Temperatures ◽  
Steel Wires ◽  
High Annealing

The effects of annealing temperature and annealing time on mechanical properties of cold drawn pearlitic steel wires containing 0.84wt% of silicon were investigated. Annealing treatment was performed on cold drawn steel wires for the temperature range of 200°C to 450°C with the different annealing time of 30sec, 1min, 15min and 1hr. The increase of tensile strength at the low annealing temperatures would be related with strain ageing behavior, while the decrease of tensile strength at the high annealing temperature is due to the spheroidization of cementite plates and the occurrence of recovery of the lamellar ferrite in the pearlite.

Thermal Stability and Mechanical Properties of Nanocrystalline L12 Al3Hf and (Al+12.5 at.%Zn)3Hf Prepared by MA and SPS

2004 ◽  
Vol 449-452 ◽  
pp. 809-812 ◽  
Author(s):  
Chang Won Kang ◽  
Hee Sup Jang ◽  
Seon Jin Kim
Keyword(s):  
Mechanical Properties ◽  
Thermal Stability ◽  
Fracture Toughness ◽  
Phase Transformation ◽  
Grain Growth ◽  
Annealing Temperature ◽  
Annealing Temperatures ◽  
Grain Sizes ◽  
Plasma Sintering ◽  
Spark Plasma

Thermal stability and mechanical properties of L12 Al3Hf and (Al+12.5 at.%Zn))3Hf synthesized by mechanical alloying(MA) and spark plasma sintering(SPS) were investigated. Nanocrystalline L12 phase was produced after MA for 8 and 10 hrs in Al3Hf and (Al+12.5 at.%Zn))3Hf powders, respectively. The grain sizes were reduced to about 10 nm in both systems after MA for 20 hrs. After SPS, L12 phase was maintained only in Zn added system. In (Al+12.5 at.%Zn))3Hf, L12 to D023 phase transformation was started at about 850°C and finished at about 1150°C Microhardness was decreased with increasing the annealing temperature while fracture toughness was increased due to the grain growth. Fracture toughness of (Al+12.5 at.%Zn))3Hf was greater than that of Al3Hf in all annealing temperatures. Fracture toughness of (Al+12.5 at.%Zn))3Hf after annealing at 1200°C was about 5.38 MPam1/2.

Effect of Annealing Treatments on Mg(Zr0.05Ti0.95)O3 Thin Films by Sol-Gel Method

2011 ◽  
Vol 216 ◽  
pp. 518-522
Author(s):  
Ching Fang Tseng ◽  
Chun Hung Lai ◽  
Chih Wen Lee
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Annealing Temperature ◽  
Substrate Surface ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Annealing Temperatures ◽  
Polycrystalline Microstructure ◽  
Deposited Films

Dielectric, Optical properties and microstructures of Mg(Zr0.05Ti0.95)O3 thin films prepared by sol-gel method on n-type Si(100) substrates at different annealing temperatures have been investigated. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited Mg(Zr0.05Ti0.95)O3 peaks orientation perpendicular to the substrate surface and the grain size with the increase in the annealing temperature. A dielectric constant of 7.4 and an optical bandgap of 3.7 were obtained for the prepared films.

NICKEL SILICIDATION ON POLYCRYSTALLINE SILICON GERMANIUM FILMS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4323-4326
Author(s):  
W. K. CHOI ◽  
K. L. PEY ◽  
H. B. ZHAO ◽  
T. OSIPOWICZ ◽  
Z. X. SHEN
Keyword(s):  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Annealing Temperature ◽  
Boundary Diffusion ◽  
Formation Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Range ◽  
Annealing Temperatures ◽  
High Annealing

The interfacial reactions of Ni with polycrystalline Si 0.8 Ge 0.2 films at a temperature range of 300-900°C by rapid thermal annealing for 60s are studied. The sheet resistances of the silicide films were relatively low at ~10 ohm/sq for samples annealed below 600°C. X-Ray diffraction results suggested the existence of low resistivity phase Ni(Si 1-x Ge x ) in the film. The significant increase in sheet resistance for films annealed at 700-900°C is probably due to the reduction in the density of Ni(Si 1-x Ge x ) as a result of fast Ni diffusion at high annealing temperatures. Fast grain boundary diffusion of Ni was suggested to cause the lowering of formation temperature of Ni(Si 1-x Ge x ) on polycrystalline Si 1-x Ge x films. Rutherford backscattering results showed that for films annealed at a temperature range of 300-600°C, Ni has reacted with the polycrystalline films. However, at an annealing temperature higher than 700°C, Ni diffused through the whole film.

scholarly journals Influence of annealing temperature on reversible resistive switching of WOx thin filmsdeposited on FTO substrate

2014 ◽  
Vol 17 (3) ◽  
pp. 12-18
Author(s):  
Tam Thi Bang Dao ◽  
Thang Bach Pham
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Monoclinic Phase ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Crystalline Morphology ◽  
Annealing Temperatures ◽  
High Annealing ◽  
Bipolar Type ◽  
Switching Characteristics

In this work, we investigated effects of the annealing temperature on the crystalline, morphology of sputtered WOx thin films. The resutls show that as-deposited WOx thin films and annealed WOxthin films at 300oC, 600oC in the air are in monoclinic phase. As the annealing temperature increases, crystallinity of WOx thin films enhances with high(200) orientation. FESEM images showed larger grain size, and denser films at high annealing temperatures. The reversible resistance switching characteristics of the Ag/WOx/FTO structure follows bipolar type, the switching ratio decreases as the crystallinity of WOx thin films increases under an the annealing treatment.

scholarly journals Phase transformation in tungsten oxide nanoplates as a function of post-annealing temperature and its electrochemical influence on energy storage

2020 ◽  
Vol 2 (10) ◽  
pp. 4689-4701 ◽  
Author(s):  
Shobhnath P. Gupta ◽  
Harishchandra H. Nishad ◽  
Sanjay D. Chakane ◽  
Suresh W. Gosavi ◽  
Dattatray J. Late ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Phase Transformation ◽  
Energy Storage ◽  
Electrochemical Performance ◽  
Tungsten Oxide ◽  
Annealing Temperature ◽  
Schematic Representation ◽  
Annealing Temperatures ◽  
Post Annealing ◽  
Post Annealing Temperature

The schematic representation exhibits phase transformation of WO3 nanoplates at various annealing temperatures confirmed by XRD and Raman spectra. The superior electrochemical performance is achieved by the mixed phase WO3 crystal structure.

Study on Phase Transformation Constitutive Behaviors of Shape Memory Alloy

2006 ◽  
Vol 324-325 ◽  
pp. 335-338 ◽  
Author(s):  
Bo Zhou ◽  
Sung Ho Yoon
Keyword(s):  
Phase Transformation ◽  
Stress State ◽  
Numerical Analysis ◽  
Annealing Temperature ◽  
External Stress ◽  
Transformation Model ◽  
Transformation Temperatures ◽  
Annealing Temperatures ◽  
Stress Free State ◽  
New Phase

Phase transformation temperatures of the SMA annealed at different annealing temperature were investigated through a series of DSC test. A new phase transformation model was proposed to predict the phase transformation and a numerical analysis was conducted to demonstrate the applicability of the new model. According to the result, phase transformation temperatures would be affected on annealing temperatures and the new phase transformation model would be applicable to predict the phase transformation under the stress-free state or the external stress state.

scholarly journals Optical and Structural Properties of Titanium Dioxide Films from and Starting Materials Annealed at Various Temperatures

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Shih-Chang Shei
Keyword(s):  
Refractive Index ◽  
Titanium Dioxide ◽  
Structural Properties ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
Starting Material ◽  
Transmittance Spectra ◽  
Titanium Dioxide Films ◽  
Annealing Temperatures ◽  
Deposited Films

We investigated the optical and structural properties of titanium dioxide films deposited from and starting materials by electron beam evaporation at annealing temperatures from to . We find that the refractive index of as-deposited films from starting material is higher than that of as-deposited films from starting material. In addition, during thermal annealing, the refractive index fluctuates slightly as compared with films from starting material. This should be attributed to the fact that the deposited molecules had a higher packing density, such that the film was denser. The transmittance spectra of films from starting material indicate that transmittance edge slightly shifts to longer wavelength with the annealing temperature increasing when compared with starting material, in which the transmittance spectra indicate that the transmittance edge strongly shifts to longer wavelength with the same annealing temperature increasing. These findings should be attributed to the absence of oxygen and scattering of rough surface.

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