EFFECT OF UNDERLAYERS ON THE STRESS OF CU FILMS PREPARED USING IONIZED METAL PLASMA

2002 ◽  
Vol 16 (01n02) ◽  
pp. 189-196 ◽  
Author(s):  
C. Y. LI ◽  
D. H. ZHANG ◽  
J. J. WU ◽  
D. X. QI ◽  
Y. QIAN ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Tensile Strain ◽  
Annealing Temperature ◽  
Abrupt Change ◽  
Lattice Mismatch ◽  
Cu Films ◽  
Annealing Temperatures ◽  
Metal Plasma ◽  
High Annealing ◽  
Cu Film

We investigated the effect of barrier metals, Ta, TaN and multi-stacked Ta/TaN , on the stress of the late deposited Cu film using ionised-metal plasma (IMP) technique. It was found that the stress of the IMP Cu film is sensitive to the strain or lattice mismatch of the barrier layer underneath. The nitrogen composition incorporated into Ta barrier layer causes tensile strain in the barrier and also the stress in the late deposited Cu film. The Cu film deposited on a multi-stacked Ta/TaN barrier showed the smallest stress due to relaxation of strain in the multi-layer barrier. In addition, the stress was also found sensitive to the annealing temperature. The abrupt change in the stress at high annealing temperatures coincides well with the formation of Cu 3 Si compound.

Effect of Annealing Temperature on Mechanical Properties of Cold Drawn Pearlitic Steel Wires

2006 ◽  
Vol 118 ◽  
pp. 31-34 ◽  
Author(s):  
Won Jong Nam ◽  
Hyung Rak Song ◽  
Kyung Tae Park
Keyword(s):  
Mechanical Properties ◽  
Tensile Strength ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Pearlitic Steel ◽  
High Annealing Temperature ◽  
Annealing Temperatures ◽  
Steel Wires ◽  
High Annealing

The effects of annealing temperature and annealing time on mechanical properties of cold drawn pearlitic steel wires containing 0.84wt% of silicon were investigated. Annealing treatment was performed on cold drawn steel wires for the temperature range of 200°C to 450°C with the different annealing time of 30sec, 1min, 15min and 1hr. The increase of tensile strength at the low annealing temperatures would be related with strain ageing behavior, while the decrease of tensile strength at the high annealing temperature is due to the spheroidization of cementite plates and the occurrence of recovery of the lamellar ferrite in the pearlite.

scholarly journals Morphology and Phase Transformation of Copper/Aluminium Oxide Films

2018 ◽  
Vol 63 (5) ◽  
pp. 425 ◽  
Author(s):  
A. Panthawan ◽  
T. Kumpika ◽  
W. Sroila ◽  
E. Kantarak ◽  
W. Thongpan ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Atmospheric Pressure ◽  
Annealing Temperature ◽  
Aluminium Oxide ◽  
Single Step ◽  
Band Gaps ◽  
Oxygen Deficit ◽  
Annealing Temperatures ◽  
High Annealing ◽  
Deposited Films

Сopper aluminium oxide (CuAlO2) was successfully prepared within the single-step sparking process at the atmospheric pressure. The as-deposited films were then annealed at 400, 900, 1000, and 1100 ∘C in an oven. The results have shown that the annealing temperature has direct effect on the morphology, phase transformation, and optical properties. CuAlO2 in the delafossite phase was formed on the annealed films at temperatures higher than 900 ∘C. Furthermore, the energy band gaps of the annealed films were linearly increased from 3.3 to 3.8 eV with increasing the annealing temperature from 400 to 1100 ∘C due to a reduction of the oxygen deficit of films at high annealing temperatures.

STUDY OF Cu DIFFUSION IN Cu/TaN/SiO2/Si MULTILAYER STRUCTURES

2001 ◽  
Vol 08 (05) ◽  
pp. 527-532 ◽  
Author(s):  
D. H. ZHANG ◽  
S. W. LOH ◽  
C. Y. LI ◽  
P. D. FOO ◽  
JOSEPH XIE ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Copper Film ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Cu Films ◽  
Cu Film ◽  
Different Temperatures ◽  
Metal Organic ◽  
Barrier Metal ◽  
Organic Chemical Vapor Deposition

This paper reports the effect of a flash copper layer, sandwiched between a copper film deposited by metal-organic chemical vapor deposition (MOCVD) and a TaN barrier metal, on copper diffusion through TaN barrier to Si substrate after rapid thermal annealing at different temperatures. It is found that for the structure of CVD Cu/TaN/SiO 2/ Si , which has no flash Cu layer, Cu could diffuse through the 25-nm-thick TaN barrier layer at an annealing temperature of 600°Cfor 180 s. However, by incorporating a flash Cu layer between the CVD Cu film and the TaN barrier, Cu diffusion can be significantly reduced. In addition to Cu , the out-diffusion of Si and oxygen, and the interaction between them can also be reduced by the incorporated flash Cu layer, due likely to the change of the crystallographic orientation of the CVD Cu films.

NICKEL SILICIDATION ON POLYCRYSTALLINE SILICON GERMANIUM FILMS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4323-4326
Author(s):  
W. K. CHOI ◽  
K. L. PEY ◽  
H. B. ZHAO ◽  
T. OSIPOWICZ ◽  
Z. X. SHEN
Keyword(s):  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Annealing Temperature ◽  
Boundary Diffusion ◽  
Formation Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Range ◽  
Annealing Temperatures ◽  
High Annealing

The interfacial reactions of Ni with polycrystalline Si 0.8 Ge 0.2 films at a temperature range of 300-900°C by rapid thermal annealing for 60s are studied. The sheet resistances of the silicide films were relatively low at ~10 ohm/sq for samples annealed below 600°C. X-Ray diffraction results suggested the existence of low resistivity phase Ni(Si 1-x Ge x ) in the film. The significant increase in sheet resistance for films annealed at 700-900°C is probably due to the reduction in the density of Ni(Si 1-x Ge x ) as a result of fast Ni diffusion at high annealing temperatures. Fast grain boundary diffusion of Ni was suggested to cause the lowering of formation temperature of Ni(Si 1-x Ge x ) on polycrystalline Si 1-x Ge x films. Rutherford backscattering results showed that for films annealed at a temperature range of 300-600°C, Ni has reacted with the polycrystalline films. However, at an annealing temperature higher than 700°C, Ni diffused through the whole film.

scholarly journals Influence of annealing temperature on reversible resistive switching of WOx thin filmsdeposited on FTO substrate

2014 ◽  
Vol 17 (3) ◽  
pp. 12-18
Author(s):  
Tam Thi Bang Dao ◽  
Thang Bach Pham
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Monoclinic Phase ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Crystalline Morphology ◽  
Annealing Temperatures ◽  
High Annealing ◽  
Bipolar Type ◽  
Switching Characteristics

In this work, we investigated effects of the annealing temperature on the crystalline, morphology of sputtered WOx thin films. The resutls show that as-deposited WOx thin films and annealed WOxthin films at 300oC, 600oC in the air are in monoclinic phase. As the annealing temperature increases, crystallinity of WOx thin films enhances with high(200) orientation. FESEM images showed larger grain size, and denser films at high annealing temperatures. The reversible resistance switching characteristics of the Ag/WOx/FTO structure follows bipolar type, the switching ratio decreases as the crystallinity of WOx thin films increases under an the annealing treatment.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

Structural Changes of UHV Deposited Titanium Thin Films in Presence of Oxygen Flow and Temperature

2011 ◽  
Vol 110-116 ◽  
pp. 1094-1098
Author(s):  
Haleh Kangarlou ◽  
Mehdi Bahrami Gharahasanloo ◽  
Akbar Abdi Saray ◽  
Reza Mohammadi Gharabagh
Keyword(s):  
Room Temperature ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Oxygen Flow ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Titanium Thin Films ◽  
Deposition Angle ◽  
Ti Films

Ti films of same thickness, and near normal deposition angle, and same deposition rate were deposited on glass substrates, at room temperature, under UHV conditions. Different annealing temperatures as 393K, 493K and 593K with uniform 8 cm3/sec, oxygen flow, were used for producing titanium oxide layers. Their nanostructures were determined by AFM and XRD methods. Roughness of the films changed due to annealing process. The gettering property of Ti and annealing temperature can play an important role in the nanostructure of the films.

scholarly journals Experimental Investigation on Micro Deep Drawing of Stainless Steel Foils with Different Microstructural Characteristics

2021 ◽  
Vol 34 (1) ◽  
Author(s):  
Jingwei Zhao ◽  
Tao Wang ◽  
Fanghui Jia ◽  
Zhou Li ◽  
Cunlong Zhou ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Deep Drawing ◽  
Annealing Temperature ◽  
Localized Deformation ◽  
Microstructural Characteristics ◽  
Height Profile ◽  
Annealing Temperatures ◽  
Micro Deep Drawing ◽  
Profile Distribution

AbstractIn the present work, austenitic stainless steel (ASS) 304 foils with a thickness of 50 µm were first annealed at temperatures ranging from 700 to 1100 ℃ for 1 h to obtain different microstructural characteristics. Then the effects of microstructural characteristics on the formability of ASS 304 foils and the quality of drawn cups using micro deep drawing (MDD) were studied, and the mechanism involved was discussed. The results show that the as-received ASS 304 foil has a poor formability and cannot be used to form a cup using MDD. Serious wrinkling problem occurs on the drawn cup, and the height profile distribution on the mouth and the symmetry of the drawn cup is quite non-uniform when the annealing temperature is 700 ℃. At annealing temperatures of 900 and 950 ℃, the drawn cups are both characterized with very few wrinkles, and the distribution of height profile, symmetry and mouth thickness are uniform on the mouths of the drawn cups. The wrinkling becomes increasingly significant with a further increase of annealing temperature from 950 to 1100 ℃. The optimal annealing temperatures obtained in this study are 900 and 950 ℃ for reducing the generation of wrinkling, and therefore improving the quality of drawn cups. With non-optimized microstructure, the distribution of the compressive stress in the circumferential direction of the drawn foils becomes inhomogeneous, which is thought to be the cause of the occurrence of localized deformation till wrinkling during MDD.

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