Blue Photoluminescence of (ZnO)0.92(InN)0.08

MRS Advances ◽  
2016 ◽  
Vol 2 (5) ◽  
pp. 277-282 ◽  
Author(s):  
Koichi Matsushima ◽  
Kazuya Iwasaki ◽  
Nanoka Miyahara ◽  
Daisuke Yamashita ◽  
Hyunwoong Seo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Visible Spectrum ◽  
Atomic Layer ◽  
Lattice Parameter ◽  
Optical Absorption Coefficient ◽  
Entire Visible Spectrum ◽  
High Optical Absorption ◽  
High Optical Absorption Coefficient ◽  
Tunable Band Gap ◽  
Blue Photoluminescence

ABSTRACTWe have fabricated ZnInON (ZION), which is a pseudo-binary alloy of wurtzite ZnO and wurtzite InN and has a tunable band gap over the entire visible spectrum and a high optical absorption coefficient of 105 cm-1. ZION films grow two dimensionally at Ts = room temperature (RT) and 150°C, whereas they grow three dimensionally at Ts = 250 and 450°C. These films at RT and 150°C show a step-terrace structure with the step height of 0.27 nm, which corresponds to the height of a single-atomic-layer step and the half length of the c-lattice parameter of ZION. ZION film has the same a-lattice parameter of 0.325 nm as ZnO and a longer c-lattice parameter of 0.536 nm, indicating the coherent growth of ZION films on ZnO templates. ZION film grown at RT shows blue (2.89 and 3.08 eV) photoluminescence at RT.

Interface effect on electronic and optical properties of antimonene/GaAs van der Waals heterostructures

2017 ◽  
Vol 5 (37) ◽  
pp. 9687-9693 ◽  
Author(s):  
Ning Wang ◽  
Dan Cao ◽  
Jun Wang ◽  
Pei Liang ◽  
Xiaoshuang Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Van Der Waals ◽  
Band Alignment ◽  
Optical Absorption Coefficient ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Visible Light Range ◽  
High Optical Absorption ◽  
High Optical Absorption Coefficient

Antimonene/GaAs van der Waals heterostructures exhibit a type-II band alignment and a high optical absorption coefficient in the visible-light range.

scholarly journals Spatial multiplexing holographic combiner for glasses-free augmented reality

Nanophotonics ◽  
2020 ◽  
Vol 9 (9) ◽  
pp. 3003-3010
Author(s):  
Jiacheng Shi ◽  
Wen Qiao ◽  
Jianyu Hua ◽  
Ruibin Li ◽  
Linsen Chen
Keyword(s):  
Augmented Reality ◽  
Large Scale ◽  
Motion Parallax ◽  
Visible Spectrum ◽  
Physical World ◽  
Spatial Multiplexing ◽  
White Balance ◽  
Full Color ◽  
Entire Visible Spectrum ◽  
3D Scene

AbstractGlasses-free augmented reality is of great interest by fusing virtual 3D images naturally with physical world without the aid of any wearable equipment. Here we propose a large-scale spatial multiplexing holographic see-through combiner for full-color 3D display. The pixelated metagratings with varied orientation and spatial frequency discretely reconstruct the propagating lightfield. The irradiance pattern of each view is tailored to form super Gaussian distribution with minimized crosstalk. What’s more, spatial multiplexing holographic combiner with customized aperture size is adopted for the white balance of virtually displayed full-color 3D scene. In a 32-inch prototype, 16 views form a smooth parallax with a viewing angle of 47°. A high transmission (>75%) over the entire visible spectrum range is achieved. We demonstrated that the displayed virtual 3D scene not only preserved natural motion parallax, but also mixed well with the natural objects. The potential applications of this study include education, communication, product design, advertisement, and head-up display.

scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Molecular Precursors ◽  
Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

RECENT DEVELOPMENTS ON 3D INTEGRATION OF METALLIC SET ONTO CMOS PROCESS FOR MEMORY APPLICATION

2012 ◽  
Vol 11 (04) ◽  
pp. 1240024 ◽  
Author(s):  
N. JOUVET ◽  
M. A. BOUNOUAR ◽  
S. ECOFFEY ◽  
C. NAUENHEIM ◽  
A. BEAUMONT ◽  
...  
Keyword(s):  
Room Temperature ◽  
Memory Cell ◽  
Atomic Layer ◽  
Cmos Process ◽  
3D Integration ◽  
Simulation Tools ◽  
Layer Deposition ◽  
Recent Developments ◽  
Sram Memory ◽  
Electrical Characterizations

This work presents a nanodamascene process for a CMOS back-end-of-line fabrication of metallic single electron transistor(SET), together with the use of simulation tools for the development of a SET SRAM memory cell. We show room temperature electrical characterizations of SETs fabricated on CMOS with relaxed dimensions, and simulations of a SET SRAM memory cell. Using their physical characteristics achievable through the use of atomic layer deposition, it will be demonstrated that it has the potential to operate at temperature up to 398 K, and that power consumption is less than that of equivalent circuit in advanced CMOS technologies. In order to take advantage of both low power SETs and high CMOS drive efficiency, a hybrid 3D SET CMOS circuit is proposed.

scholarly journals Rhodanine-based dyes absorbing in the entire visible spectrum

2017 ◽  
Vol 4 (6) ◽  
pp. 1024-1028 ◽  
Author(s):  
Rafael Sandoval-Torrientes ◽  
Joaquín Calbo ◽  
David García-Fresnadillo ◽  
José Santos ◽  
Enrique Ortí ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dft Calculations ◽  
Electrochemical Characterizations ◽  
Visible Spectrum ◽  
Electronic And Optical Properties ◽  
Entire Visible Spectrum

A series of new broad-absorbing rhodanine-fluorene dyes conjugated with triarylamines are presented. Spectroscopic and electrochemical characterizations, along with theoretical DFT calculations, unveil the electronic and optical properties of the dyes.

Direct Nanoscale Patterning by Atomic Manipulation

1995 ◽  
Vol 380 ◽  
Author(s):  
Craig T. Salling
Keyword(s):  
Scanning Tunneling Microscope ◽  
Room Temperature ◽  
Atomic Layer ◽  
Sample Surface ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Nanoscale Patterning ◽  
Direct Patterning ◽  
Scale Structures ◽  
Atomic Manipulation

ABSTRACTThe ability to create atomic-scale structures with the scanning tunneling microscope (STM) plays an important role in the development of a future nanoscale technology. I briefly review the various modes of STM-based fabrication and atomic manipulation. I focus on using a UHV-STM to directly pattern the Si(001) surface by atomic manipulation at room temperature. By carefully adjusting the tip morphology and pulse voltage, a single atomic layer can be removed from the sample surface to define features one atom deep. Segments of individual dimer rows can be removed to create structures with atomically straight edges and with lateral features as small as one dimer wide. Trenches ∼3 nm wide and 2–3 atomic layers deep can be created with less stringent control of patterning parameters. Direct patterning provides a straightforward route to the fabrication of nanoscale test structures under UHV conditions of cleanliness.

ZnO Schottky Nanodiodes Processed From Plasma-Enhanced Atomic Layer Deposition at Near Room Temperature

2018 ◽  
Vol 65 (10) ◽  
pp. 4513-4519
Author(s):  
Mei Shen ◽  
Triratna P. Muneshwar ◽  
Kenneth C. Cadien ◽  
Ying Yin Tsui ◽  
Douglas W. Barlage
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Layer Deposition

Material and optical properties of GaAs grown on (001) Ge/Si pseudo-substrate

2004 ◽  
Vol 809 ◽  
Author(s):  
Yves Chriqui ◽  
Ludovic Largeau ◽  
Gilles Patriarche ◽  
Guillaume Saint-Girons ◽  
Sophie Bouchoule ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
High Speed ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Lattice Parameter ◽  
Photoluminescence Intensity ◽  
High Quality ◽  
Light Emitting ◽  
Thermal Expansion Coefficients

ABSTRACTOne of the major challenges during recent years was to achieve the compatibility of III-V semiconductor epitaxy on silicon substrates to combine opto-electronics with high speed circuit technology. However, the growth of high quality epitaxial GaAs on Si is not straightforward due to the intrinsic differences in lattice parameters and thermal expansion coefficients of the two materials. Moreover, antiphase boundaries (APBs) appear that are disadvantageous for the fabrication of light emitting devices. Recently the successful fabrication of high quality germanium layers on exact (001) Si by chemical vapor deposition (CVD) was reported. Due to the germanium seed layer the lattice parameter is matched to the one of GaAs providing for excellent conditions for the subsequent GaAs growth. We have studied the material morphology of GaAs grown on Ge/Si PS using atomic layer epitaxy (ALE) at the interface between Ge and GaAs. We present results on the reduction of APBs and dislocation density on (001) Ge/Si PS when ALE is applied. The ALE allows the reduction of the residual dislocation density in the GaAs layers to 105 cm−2 (one order of magnitude as compared to the dislocation density of the Ge/Si PS). The optical properties are improved (ie. increased photoluminescence intensity). Using ALE, light emitting diodes based on strained InGaAs/GaAs quantum well as well as of In(Ga)As quantum dots on an exactly oriented (001) Ge/Si pseudo-substrate were fabricated and characterized.

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