Process Characterization of Ultra-fine Tin Oxide Fibers Synthesis

2006 ◽  
Vol 951 ◽  
Author(s):  
Yu Wang ◽  
Idalia Ramos ◽  
Jorge J. Santiago-Avilés
Keyword(s):  
Tin Oxide ◽  
Precursor Solution ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
Rutile Structure ◽  
Sensor Applications ◽  
Process Characterization ◽  
Poly Ethylene ◽  
Physical Changes

ABSTRACTTin oxide (SnO2) with rutile structure is a wide-band gap semiconductor that has been used extensively in optoelectronic devices and sensors. A fibrous shape is especially favorable for the sensor applications. The authors synthesized micro-/nano- SnO2 fibers from a precursor solution of poly (ethylene oxide) (PEO), chloroform (CHCl3) and dimethyldineodecanoate tin (C22H44O4Sn) using electrospinning and metallorganics decomposition techniques. This paper uses Fourier-transform infrared spectroscopy, thermogravimetric and differential thermal analysis, and x-ray diffraction to reveal a series of chemical and physical changes from the starting chemicals to the final product of ultra-fine SnO2 fibers: the solvent CHCl3 evaporates during the electrospinning; the organic groups in PEO and C22H44O4Sn decompose with Sn-C bond in C22H44O4Sn replaced by Sn-O between 220 and 300°C, and transform into rutile structure between 300 and 380°C; the incipient rutile lattice develops into a relatively complete degree after sintering at higher temperatures up to 600°C.

scholarly journals Evolution of tin oxide (SnO2) nanostructures synthesized by hydrothermal method

2021 ◽  
Author(s):  
AJAY PRATAP SINGH GAHLOT ◽  
Rupali Pandey ◽  
Sandeep Singhania ◽  
Arijit choudhary ◽  
Amit Garg ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Gas Sensing ◽  
Hydrothermal Process ◽  
Lithium Ion ◽  
Precursor Solution ◽  
Wide Band ◽  
Sno2 Nanostructures ◽  
X Ray ◽  
Vis Spectroscopy ◽  
Wide Range

Abstract Tin oxide (SnO2), a versatile metal oxide due to its wide range of applications and its nature as an amphoteric oxide, has attracted researchers globally for many decades. Hydrothermal synthesis of wide band gap oxides with controllable nano shape and size is of primary attraction leading to myriad areas of applications such as electrodes in Lithium-ion batteries, gas sensing, photo-catalyst etc. to name a few. In this work, we have synthesized different types of nanostructures of Tin oxide through low temperature(180oC) Hydrothermal process by varying the concentration of its precursor solution (SnCl4.5H2O) from 0.0625M to 0.25M. The characterization of as -Synthesized SnO2 done using UV-Vis spectroscopy, Scanning Electron Microscopy (SEM), Energy Dispersive X ray (EDX) and X-Ray Diffraction (XRD) confirm synthesis of tin oxide and formation of various nanostructures as a function of concentration of the precursor solution. The evolution of various shapes of nanostructures has been discussed in light of existing theories.

Synthesis and characterization of homogeneous lead-substituted tin oxide with the (110) face of rutile structure

2000 ◽  
Vol 15 (10) ◽  
pp. 2076-2079
Author(s):  
Chika Nozaki ◽  
Takashi Yamada ◽  
Kenji Tabata ◽  
Eiji Suzuki
Keyword(s):  
Electron Microscopy ◽  
Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Synthesis And Characterization ◽  
X Ray Diffraction ◽  
Rutile Structure ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

Synthesis of a rutile-type lead-substituted tin oxide with (110) face was investigated. The characterization was performed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, infrared spectroscopy, x-ray photoelectron spectroscopy, and Brunauer–Emmett–Teller surface area measurements. The homogeneous rutile-type lead-substituted tin oxide was obtained until 4.1 mol% of tin was substituted with lead. The surface of obtained oxide had a homogeneously lead-substituted (110) face.

Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
J. Narayan ◽  
M. Razeghi
Keyword(s):  
Epitaxial Growth ◽  
Substrate Surface ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
High Quality ◽  
Microstructural Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*10 10cm−2 . The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

Stress origin and relaxation in epitaxial AlN thin films on SiC

2001 ◽  
Vol 696 ◽  
Author(s):  
Ravi Bathe ◽  
R.D. Vispute ◽  
Daniel Habersat ◽  
R. P. Sharma ◽  
T. Venkatesan ◽  
...  
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Highly Strained

AbstractWe have investigated the epitaxy, surfaces, interfaces, and defects in AlN thin films grown on SiC by pulsed laser deposition. The stress origin, evolution, and relaxation in these films is reported. The crystalline structure and surface morphology of the epitaxially grown AlN thin films on SiC (0001) substrates have been studied using x-ray diffraction (θ–2θ, ω, and Ψ scans) and atomic force microscopy, respectively. The defect analysis has been carried out by using Rutherford backscattering spectrometry and ion channeling technique. The films were grown at various substrate temperatures ranging from room temperature to 1100 °C. X-ray diffraction measurements show highly oriented AlN films when grown at temperatures of 750- 800 °C, and single crystals above 800 °C. The films grown in the temperature range of 950 °C to 1000 °C have been found to be highly strained, whereas the films grown above 1000 °C were found to be cracked along the crystallographic axes. The results of stress as a function of growth temperature, thermal mismatch, growth mode, and buffer layer thickness will be presented, and the implications of these results for wide band gap power electronics will be discussed.

PVP-Assisted Sb-Doped SnO2 Nanofibers Synthesized by Electrospinning Process

2016 ◽  
Vol 675-676 ◽  
pp. 150-153
Author(s):  
Somtop Santibenchakul ◽  
Suwan Chaiyasith ◽  
Wisanu Pecharapa
Keyword(s):  
Crystal Structure ◽  
Tin Oxide ◽  
Doping Concentration ◽  
Precursor Solution ◽  
Injection Rate ◽  
Electrospinning Process ◽  
X Ray Diffraction ◽  
Electrospinning Technique ◽  
X Ray ◽  
Sb Doping

Well-defined Sb-doped tin oxide (ATO) nanofibers were synthesized by electrospinning technique. Polyvinylpyrrolidone (PVP), SnCl4·5H2O and SbCl3 were chosen as suitable precursors for preparing ATO nanofibers. All of precursors were homogeneously dissolved with the mixture solvent of dimethylformamide (DMF) and absolute ethanol. Electrospinning process was carried out at applied voltage of 10 kV and distance between needle tip to aluminium foil collector was fixed at 10 cm. The injection rate of precursor solution was controlled at 0.5 ml/hr. The as-spun nanofibers were calcined at 600°C with heating rate of 5 °C/min in order to remove the PVP template and improve the crystallinity of ATO structure. Effect of Sb doping concentration on their crystal structure was investigated. The morphology and crystal structure of the electrospun fibers were analyzed by scanning electron microscope (SEM) and X-ray diffraction (XRD). In this work, the obtained ATO nanofibers had average range diameter from 150 to 350 nm with rough surface. Sb doping concentration in ATO nanofibers plays a key role on their network morphology. The excellent doping concentration of Sb that offered the continuous fibrous and porous ATO nanofibers was 7%.

Electrospun Tin Oxide Nanofibers with Different Precursor Solution

2011 ◽  
Vol 675-677 ◽  
pp. 275-278
Author(s):  
Xue Bai ◽  
Di Jia ◽  
Bo Wen Cheng ◽  
Wei Min Kang ◽  
Quan Xiang Li
Keyword(s):  
Crystal Structure ◽  
Tin Oxide ◽  
Precursor Solution ◽  
Average Diameter ◽  
Surface Element ◽  
Rutile Structure ◽  
Inorganic Hybrid ◽  
Hybrid Nanofibers ◽  
Electrospinning Method ◽  
Crystalline Forms

In this paper, electrospinning method was adopted to prepare tin oxide nanofibers membrane with three kinds of novel precursor solution PVP/C12H24O4Sn, PVP/ C4H10OSn and PVP/SnCl4. The morphology, surface element, thermal analysis and crystal structure of the fibers membrane were investigated by SEM, EDS, TG-DTA and XRD. The results showed that the organic/inorganic hybrid nanofibers with an average diameter of 300～700 nm can be obtained by electrospinning. But after calcined at 600°C, the loose and porous tin oxide nanofibers membrane with an average diameter of 100～250 nm can be obtained only by using PVP/SnCl4 as preceusor solution, moreover, it showed good fiber forming property. From XRD spectra, it was found that the rutile structure tin oxide finally obtained without other crystalline forms.

Studies on the Preparation and Properties of Sheet Ni-Doped ZnO

2011 ◽  
Vol 356-360 ◽  
pp. 435-438
Author(s):  
Ling Cao ◽  
Dai Zong An ◽  
Yan Xin Wang ◽  
Shan Shan He ◽  
Chuang Ju Dong
Keyword(s):  
Growth Parameters ◽  
Wide Band ◽  
Precipitation Method ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
Manipulation System ◽  
Doped Zno ◽  
Zno Crystal ◽  
Analysis System

ZnO is a direct wide band-gap Ⅱ-Ⅵ semiconductor material. For decades, ZnO has gained more and more attention as a wide band semiconductor. This paper introduced a modified homogeneous precipitation method to prepare sheet Ni-doped ZnO crystal. The preparation process was studied and the mechanism of this method was discussed. The properties of the sheet Ni-doped ZnO crystal and the effects of growth parameters on the quality of sheet Ni-doped ZnO crystal were studied using XTJ30-micro image manipulation system, thermal analysis system, X-ray diffraction. etc.

Electron Diffusion in ZnO Nanomaterial: An Ac Impedance Investigation

2011 ◽  
Vol 312-315 ◽  
pp. 393-398
Author(s):  
Roshidah Rusdi ◽  
Norlida Kamarulzaman ◽  
Mohamed Nor Sabirin ◽  
Zurina Osman ◽  
Azilah Abd Rahman
Keyword(s):  
Sol Gel ◽  
Wide Band ◽  
Ac Impedance ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
Electron Diffusion ◽  
Electron Conduction ◽  
Diffusion Characteristics ◽  
Zno Nanomaterials ◽  
Electrical Components

ZnO is a wide band gap semiconductor with many applications such as in solar cells, varistors, and other electrical components. The ZnO material was synthesized using a sol-gel method. The material was characterized using X-Ray diffraction (XRD) and scanning electron microscopy (SEM). The material is pure and single phase. Electron conduction in ZnO nanomaterials was done using alternating current (ac) impedance. The frequency ranges of the measurements used were 1x 10-3 Hz to 1x 106 Hz and the ac impedance measurements were done within a temperature range of 60oC to 100oC. Nyquist plots were drawn and bulk resistances were obtained. Subsequently, conductivity values were calculated and the diffusion characteristics were obtained. From further analysis of the conductivities with temperature, the diffusion of electrons in the material was studied. It was found that the conductivity increased with the increase of temperature which meant that the rate of diffusion of the electrons through the materials also increased. An Arrhenius relation was concluded for the electron diffusion in the ZnO nanomaterials.

scholarly journals Porphyrin-Functionalized Zinc Oxide Nanostructures for Sensor Applications

Sensors ◽  
2018 ◽  
Vol 18 (7) ◽  
pp. 2279 ◽  
Author(s):  
Mohammad Ekrami ◽  
Gabriele Magna ◽  
Zahra Emam-djomeh ◽  
Mohammad Saeed Yarmand ◽  
Roberto Paolesse ◽  
...  
Keyword(s):  
Hybrid Materials ◽  
Mechanical Energy ◽  
Dye Sensitized Solar Cells ◽  
Wide Band ◽  
Oxide Semiconductor ◽  
Zinc Oxide Nanostructures ◽  
Wide Band Gap ◽  
Sensing Properties ◽  
Sensor Applications ◽  
Zinc Oxides

Hybrid materials made of wide band gap semiconductors and dye molecules are largely studied mainly for photovoltaic applications. However, these materials also show interesting chemical sensitivity. Zinc oxides (ZnO) and porphyrins are good examples of a metal oxide semiconductor and a dye molecule that give rise to a hybrid material with such interesting properties. ZnO has been studied for sensors, optoelectronics, electronic devices, photo-anodes for dye-sensitized solar cells, and for mechanical energy harvesting. Porphyrins, on the other side, can be synthesized in order to mimic their roles in living systems such as oxygen transport and charge transfer for catalytic processes in animals and photosynthesis in plants. This paper provides a review of the chemical sensing properties of porphyrin-capped ZnO nanostructures. The methodologies to functionalize the ZnO surface with porphyrins are illustrated with emphasis on the relationships between the material preparation and its sensing properties. The development of sensors is described through the application of the hybrid materials to different transducers.

Nanostructure Assembly of Indium Sulphide Quantum Dots and Their Characterization

2008 ◽  
Vol 8 (2) ◽  
pp. 689-694 ◽  
Author(s):  
B. Vigneashwari ◽  
V. Ravichandran ◽  
P. Parameswaran ◽  
S. Dash ◽  
A. K. Tyagi
Keyword(s):  
Quantum Dots ◽  
Colloidal Suspension ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Hydrothermal Route ◽  
Wide Band Gap ◽  
X Ray ◽  
Glass Substrates ◽  
Series Of Experiments ◽  
Indium Sulphide

Nanocrystals (∼5 nm) of the semiconducting wide band gap material β-In2S3 obtained by chemical synthesis through a hydrothermal route were characterized for phase and compositional purity. These nanoparticles exhibited quantum confinement characteristics as revealed by a blue-shifted optical absorption. These quantum dots of β-In2S3 were electrically driven from a monodisperse colloidal suspension on to conducting glass substrates by Electophoretic Deposition (EPD) technique and nanostructural thin films were obtained. The crystalline and morphological structures of these deposits were investigated by X-ray diffraction and nanoscopic techniques. We report here that certain interesting nanostructural morphologies were observed in the two-dimensional quantum dot assemblies of β-In2S3. The effect of the controlling parameters on the cluster growth and deposit integrity was also systematically studied through a series of experiments and the results are reported here.

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