Laser Rapid Sintering of Metallo-Organic Derived Oxide Films

1990 ◽  
Vol 201 ◽  
Author(s):  
Rong-Fuh Louh ◽  
Relva C. Buchanan
Keyword(s):  
Oxide Films ◽  
Film Surface ◽  
Processing Parameters ◽  
Probe Laser ◽  
Sintering Process ◽  
Spatial Grain ◽  
Rapid Sintering ◽  
Compositional Variations ◽  
Film Substrate ◽  
Deposited Film

AbstractOxide films of ZrO2, Y2O3, yttria stabilized zirconia (YSZ), and high Tc superconducting YBa2Cu3O7-x and Bi-Sr-Ca-Cu-O films were produced by spin coating metallo-organic precursors onto Si, ZrO2 and MgO single crystal substrates. Densification of these oxide films, after pyrolysis of organic constituents, was achieved by scanning a Nd:YAG laser beam across the film surface. Surface morphology, microstructures, spatial grain size distribution, compositional variations, defects and physical properties of laser sintered films were characterized using SEM, EDS, TEM, SIMS, XRD and 4-point electrical resistivity probe. Laser processing parameters, deposited film thickness and organic burn-off showed strong influences on the film densification behavior. This paper focuses on pursuing optimum conditions for obtaining dense, uniform sintered patterns in oxide films and on understanding the film-substrate interaction and dynamics of nucleation and growth via the laser rapid sintering process.

Parallel Glide: A Fundamentally Different Type of Dislocation Motion in Ultrathin Metal Films

2003 ◽  
Vol 779 ◽  
Author(s):  
T. John Balk ◽  
Gerhard Dehm ◽  
Eduard Arzt
Keyword(s):  
Thermal Cycling ◽  
Grain Boundaries ◽  
Film Surface ◽  
Metal Films ◽  
Geometric Constraints ◽  
Film Stress ◽  
Diffusional Creep ◽  
Creep Model ◽  
Substrate Interface ◽  
Film Substrate

AbstractWhen confronted by severe geometric constraints, dislocations may respond in unforeseen ways. One example of such unexpected behavior is parallel glide in unpassivated, ultrathin (200 nm and thinner) metal films. This involves the glide of dislocations parallel to and very near the film/substrate interface, following their emission from grain boundaries. In situ transmission electron microscopy reveals that this mechanism dominates the thermomechanical behavior of ultrathin, unpassivated copper films. However, according to Schmid's law, the biaxial film stress that evolves during thermal cycling does not generate a resolved shear stress parallel to the film/substrate interface and therefore should not drive such motion. Instead, it is proposed that the observed dislocations are generated as a result of atomic diffusion into the grain boundaries. This provides experimental support for the constrained diffusional creep model of Gao et al.[1], in which they described the diffusional exchange of atoms between the unpassivated film surface and grain boundaries at high temperatures, a process that can locally relax the film stress near those boundaries. In the grains where it is observed, parallel glide can account for the plastic strain generated within a film during thermal cycling. One feature of this mechanism at the nanoscale is that, as grain size decreases, eventually a single dislocation suffices to mediate plasticity in an entire grain during thermal cycling. Parallel glide is a new example of the interactions between dislocations and the surface/interface, which are likely to increase in importance during the persistent miniaturization of thin film geometries.

scholarly journals Modern Biodegradable Plastics—Processing and Properties Part II

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2523
Author(s):  
Janusz W. Sikora ◽  
Łukasz Majewski ◽  
Andrzej Puszka
Keyword(s):  
Water Vapor ◽  
Rotational Speed ◽  
Corn Starch ◽  
Potato Starch ◽  
Reference Sample ◽  
Film Surface ◽  
Barrier Properties ◽  
Processing Parameters ◽  
Biodegradable Plastics ◽  
Film Blowing

Four different plastics were tested: potato starch based plastic (TPS-P)–BIOPLAST GF 106/02; corn starch based plastic (TPS-C)–BioComp BF 01HP; polylactic acid (polylactide) plastic (PLA)—BioComp BF 7210 and low density polyethylene, trade name Malen E FABS 23-D022; as a petrochemical reference sample. Using the blown film extrusion method and various screw rotational speeds, films were obtained and tested, as a result of which the following were determined: breaking stress, strain at break, static and dynamic friction coefficient of film in longitudinal and transverse direction, puncture resistance and strain at break, color, brightness and gloss of film, surface roughness, barrier properties and microstructure. The biodegradable plastics tested are characterized by comparable or even better mechanical strength than petrochemical polyethylene for the range of film blowing processing parameters used here. The effect of the screw rotational speed on the mechanical characteristics of the films obtained was also demonstrated. With the increase in the screw rotational speed, the decrease of barrier properties was also observed. No correlation between roughness and permeability of gases and water vapor was shown. It was indicated that biodegradable plastics might be competitive for conventional petrochemical materials used in film blowing niche applications where cost, recyclability, optical and water vapor barrier properties are not critical.

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

Exotic Doping for Zno Thin Films: Possibility of Monolithic Optical Integrated Circuit

1999 ◽  
Vol 574 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tamaki Shimura ◽  
Toshifumi Wakano ◽  
Atsushi Ashida ◽  
Taichiro Ito
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Nonlinear Optic ◽  
Integrated Circuit ◽  
Film Surface ◽  
Zno Thin Films ◽  
Process Window ◽  
Electro Optic ◽  
Film Substrate ◽  
Optical Integrated Circuit

AbstractWe propose the application of ZnO:X (X = Li, Mg, N, In, Al, Mn, Gd, Yb etc.) films for a monolithic Optical Integrated Circuit (OIC). Since ZnO exhibits excellent piezoelectric effect and has also electro-optic and nonlinear optic effects and the thin films are easily obtained, it has been studied as one of the important thin film wave guide materials especially for an acoustooptic device[1]. In terms of electro-optic and nonlinear optic effects, however, LiNbO3 or LiTaO3 is superior to ZnO. The most important issue of thin film waveguide using such ferroelectrics is optical losses at the film/substrate interface and the film surface, because the process window to control the surface morphology is very narrow due to their high deposition temperature. Since ZnO can be grown at extremely low temperature, the roughness at the surface and the interface is expected to be minimized. This is the absolute requirement especially for waveguide using a blue or ultraviolet laser. Recently, lasing at the wavelength of ultraviolet, ferroelectric and antiferromagnetic behaviors of ZnO doped with various exotic elements (exotic doping) have been reported. This paper discusses the OIC application of ZnO thin films doped with exotic elements.

Growth defects in GaN films on sapphire: The probable origin of threading dislocations

1996 ◽  
Vol 11 (3) ◽  
pp. 580-592 ◽  
Author(s):  
X. J. Ning ◽  
F. R. Chien ◽  
P. Pirouz ◽  
J. W. Yang ◽  
M. Asif Khan
Keyword(s):  
Substrate Surface ◽  
Film Surface ◽  
Biaxial Compression ◽  
Threading Dislocations ◽  
Burgers Vector ◽  
Growth Defects ◽  
Surface Steps ◽  
Probable Origin ◽  
Film Substrate ◽  
Gan Buffer Layer

Single crystal GaN films with a wurtzite structure were grown on the basal plane of sapphire. A high density of threading dislocations parallel to the c-axis crossed the film from the interface to the film surface. They were found to have a predominantly edge character with a Burgers vector. In addition, dislocation hal-loops, elongated along the c-axis of GaN, were also found on the prism planes. These dislocations had a mostly screw character with a [0001] Burgers vector. Substrate surface steps with a height of were found to be accommodated by localized elastic bending of GaN (0001)GaN planes in the vicinity of the film/substrate interface. Observations show that the region of the film, with a thickness of ∼100 nm, adjacent to the interface is highly defective. This region is thought to correspond to the low-temperature GaN “buffer” layer which is initially grown on the sapphire substrate. Based on the experimental observations, a model for the formation of the majority threading dislocations in the film is proposed. The analysis of the results leads us to conclude that the film is under residual biaxial compression.

Characteristics of Selective Lpcvd W Films By Silicon Reduction

1986 ◽  
Vol 71 ◽  
Author(s):  
R. V. Joshi ◽  
D. A. Smith
Keyword(s):  
Crystal Structure ◽  
Grain Size ◽  
Annealing Temperature ◽  
Film Surface ◽  
Silicide Formation ◽  
X Ray ◽  
Tungsten Hexafluoride ◽  
Deposited Film ◽  
Deposited Films ◽  
Oxygen Impurities

AbstractThe characteristics of Selective LPCVD tungsten films produced by silicon reduction of tungsten hexafluoride are presented. The tungsten films deposited using Si(100), Si(111) and polysilicon undoped and doped substrates are analyzed by X-RAY, TEM, RBS, AES, SIMS and SEM. The as deposited bcc tungsten films are polycrystalline with a grain size 80 - 100Å. The effect of annealing temperature and time on the crystal structure of films was studied. Tungsten reacts to form tungsten silicide at 600°C. The silicide grain size is of the order of 100 - 200Å at 600°C and increases gradually to 400 - 500Å at 1000°C. The oxygen impurities in the film retard the silicide formation further at 1000°C. Silicon from the substrate out-diffuses to the film surface and reacts with the presence of oxygen impurities in the annealing ambient to form Si-O at 1000°C. As deposited film resistivities of 130-140 micro-ohm-cm are achieved reproducibly and reach 60-70 micro-ohm-cm after 1000°C annealing in nitrogen or argon ambient. The impurities H, C, O and F are found in the as deposited films.

Preparation of Foam Glass Ceramics from Phosphorus Slag

2010 ◽  
Vol 105-106 ◽  
pp. 600-603 ◽  
Author(s):  
Ben Xu ◽  
Kai Ming Liang ◽  
J.W. Cao ◽  
Y.H. Li
Keyword(s):  
Glass Powder ◽  
Foam Glass ◽  
Glass Ceramics ◽  
Processing Parameters ◽  
Treatment Temperature ◽  
Homogeneous Distribution ◽  
Sintering Process ◽  
Foaming Agent ◽  
Foaming Temperature ◽  
Foam Glass Ceramics

Phosphorus slag could be used to prepare wollastonite glass ceramics. With the aid of incorporated foaming agent, foam glass ceramics can be obtained via the sintering of the slag-based glass. After the glass powder reacted with graphite, macro-size pores with homogeneous distribution were formed. The level of porosity of the fabricated foams was controlled by varying heat treatment temperature and amount of foaming agent. It was found that the preferential processing parameters for producing foam glass ceramics were foaming temperature of 1000°C with holding time of 10 min and 1 wt. % of graphite. In this case, the porosity reached about 80%. The results show that dominant crystalline phase is wollastonite, and the high compression strength results from the crystallization of glass during sintering process.

scholarly journals MATERIAL AND THERMAL ANALYSIS OF LASER SINTERTED PRODUCTS

2013 ◽  
Vol 7 (1) ◽  
pp. 15-19 ◽  
Author(s):  
Radovan Hudák ◽  
Martin Šarik ◽  
Róbert Dadej ◽  
Jozef Živčák ◽  
Daniela Harachová
Keyword(s):  
Thermal Analysis ◽  
Heat Stress ◽  
Thermal Stresses ◽  
Processing Parameters ◽  
Sintering Process ◽  
Input Processing ◽  
Thermal Simulations ◽  
The Impact ◽  
Selection Of

Abstract Thermal analysis of laser processes can be used to predict thermal stresses and consequently deformation in a completed part. Analysis of temperature is also the basic for feedback of laser processing parameters in manufacturing. The quality of laser sintered parts greatly depends on proper selection of the input processing parameters, material properties and support creation. In order to relatively big heat stress in the built part during sintering process, the thermal simulation and thermal analysis, which could help better understand and solve the issue of parts deformations is very important. Main aim of presented work is to prepare input parameters for thermal simulations by the use of RadTherm software (Thermoanalytics Inc., USA), directly during the sintering process and after the process and find out the impact of the heat stress on a final shape and size of the prototype. Subsequently, an annealing process of constructed products after DMLS could be simulated and specified.

Characterization of spray-pyrolized superconducting YBaCuO thin films on single-crystal MgO by transmission electron microscopy

1990 ◽  
Vol 5 (8) ◽  
pp. 1605-1611 ◽  
Author(s):  
S. J. Golden ◽  
H. Isotalo ◽  
M. Lanham ◽  
J. Mayer ◽  
F. F. Lange ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Single Crystal ◽  
Processing Parameters ◽  
Transmission Electron ◽  
Film Substrate ◽  
Mgo Substrate

Superconducting YBaCuO thin films have been fabricated on single-crystal MgO by the spray-pyrolysis of nitrate precursors. The effects on the superconductive behavior of processing parameters such as time and temperature of heat treatment and film thickness were investigated. The superconductive behavior was found to be strongly dependent on film thickness. Films of thickness 1 μm were found to have a Tc of 67 K while thinner films showed appreciably degraded properties. Transmission electron microscopy studies have shown that the heat treatments necessary for the formation of the superconductive phase (for example, 950 °C for 30 min) also cause a substantial degree of film-substrate interdiffusion. Diffusion distances for Cu in the MgO substrate and Mg in the film were found to be sufficient to explain the degradation of the superconductive behavior in films of thickness 0.5 μm and 0.2 μm. From the concentration profiles obtained by EDS analysis diffusion coefficients at 950 °C for Mg into the YBaCuO thin film and for Cu into the MgO substrate were evaluated as 3 × 10−19 m2/s and 1 × 10−17 m2/s, respectively.

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