Low Density Titanium Alloys by Non-Equilibrium Processing.

1995 ◽  
Vol 400 ◽  
Author(s):  
D.M.J. Wilkes ◽  
P.S. Goodwin ◽  
C.M. Ward-Close ◽  
K. Bagnall ◽  
J. Steeds
Keyword(s):  
Solid Solution ◽  
High Resolution ◽  
Solid Solutions ◽  
Lattice Parameter ◽  
Argon Atmosphere ◽  
Low Density ◽  
Equilibrium Solubility ◽  
High Resolution Tem ◽  
High Vapour Pressure ◽  
Clean Atmosphere

AbstractHigh levels of Mg solid solution in Ti have been achieved by mechanical alloying in a clean atmosphere. The equilibrium solubility of magnesium in titanium is very low and processing of these alloys by conventional routes is not possible due to the high vapour pressure of Mg and alloys of Ti and Mg have only been previously achieved by vapour quenching.Contamination during milling was avoided by processing under a high purity argon atmosphere in sealed vials. Lattice parameter measurements and SEM observations suggested that complete solid solutions were achieved in alloys up to 24wt% Mg after 48h milling. For one alloy this was confirmed by high resolution TEM which showed extremely fine Ti grains in which Mg was homogeneously distributed with no clustering or precipitation.

Metastable Solid Solutions of Impurities in Silicon

1981 ◽  
Vol 7 ◽  
Author(s):  
J. S. Williams ◽  
K. T. Short
Keyword(s):  
High Resolution ◽  
Solid Solutions ◽  
Impurity Concentration ◽  
Rutherford Backscattering ◽  
Equilibrium Solubility ◽  
Furnace Annealing ◽  
Strain Effects ◽  
Crystal Boundary ◽  
Silicon Lattice ◽  
Supersaturated Solid Solutions

ABSTRACTHigh resolution Rutherford backscattering and channeling techniques have been used to investigate the formation and stability of supersaturated solid solutions of As, Sb, In, Pb, Tℓ and Bi implants in (100) silicon. In all cases nearsubstitutional solid solubilities far exceeding maximum equilibrium solubility limits can be achieved by furnace annealing at temperatures ≤ 600°C. Details of the recrystallisation process indicate that the maximum impurity concentration which can be incorporated onto silicon lattice sites may be controlled by impurity size and associated strain effects at the amorphous-crystal boundary during epitaxial regrowth.

Synthesis of ZrO2–Y6WO12 solid solution powders by a polymerized complex method

1998 ◽  
Vol 13 (4) ◽  
pp. 939-943 ◽  
Author(s):  
Junfeng Ma ◽  
Masahiro Yoshimura ◽  
Masato Kakihana ◽  
Masatomo Yashima
Keyword(s):  
Solid Solution ◽  
Crystallite Size ◽  
Surface Area ◽  
Solid Solutions ◽  
Lattice Parameter ◽  
Cubic Phase ◽  
Complex Method ◽  
Amorphous Precursor ◽  
Fine Powders ◽  
Polymerized Complex Method

A series of solid solutions (1 − x) ZrO2 · xY0.857 W0.143 O1.714 (1/7Y6WO12) of metastable cubic phase were synthesized at 800 °C through a polymerized complex method. Lattice parameter a0 of solid solutions varies linearly with Y0.857 W0.143 O1.714 content (x). Crystallization began to occur above 400 °C from amorphous precursor to yield at 800 °C fine powders of 6–10 nm and 19–40 m2/g for crystallite size and surface area, respectively.

Orientation relationship and interfacial structure between Nbsolid solution precipitates and α-Nb5Si3 intermetallics

2009 ◽  
Vol 24 (1) ◽  
pp. 192-197 ◽  
Author(s):  
G.M. Cheng ◽  
Y.X. Tian ◽  
L.L. He
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
Transmission Electron Microscopy ◽  
Stress Concentration ◽  
High Resolution ◽  
Orientation Relationship ◽  
Interfacial Structure ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
High Resolution Tem

The orientation relationship (OR) and the interfacial structure between Nb solid solution (Nbss) precipitates and α-Nb5Si3 intermetallics have been investigated by transmission electron microscopy (TEM). The OR between Nbss and α-Nb5Si3 was determined by selected-area electron diffraction analyses as (222)Nb//(002)α and . High-resolution TEM images of the Nbss/α-Nb5Si3 interface were presented. Steps existed at the interface that acted as centers of stress concentration and released the distortion of lattices to decrease the interfacial energy. In addition, the interfacial models were proposed based on the observed OR to describe the atomic matching of the interface. The distribution of alloying elements at the Nbss/α-Nb5Si3 interface has also been investigated, and Hf was enriched at the interface to strengthen the grain boundary.

A Comparison of Calculated and Experimental Hrtem Images for Twinned Boron Carbide

1987 ◽  
Vol 97 ◽  
Author(s):  
Mark L. Miller ◽  
Ian D. R. Mackinnon
Keyword(s):  
High Resolution ◽  
Boron Carbide ◽  
Structural Model ◽  
Twin Plane ◽  
Low Density ◽  
Structure Model ◽  
White Spots ◽  
High Resolution Tem ◽  
Direct Inter ◽  
Periodic Continuation

ABSTRACTHigh resolution TEM images of boron carbide (B13C2) have been recorded and compared with images calculated using the multislice method as implemented by M. A. O'Keefe in the SHRLI programs. Images calculated for the [010] zone, using machine parameters for the JEOL 2000FX AEM operating at 200 keV, indicate that for the structure model of Will et al., the optimum defocus image can be interpreted such that white spots correspond to B12 icosahedra for thin specimens and to low density channels through the structure adjacent to the direct inter-icosahedral bonds for specimens of intermediate thickness (-40 > t > -100 nm). With this information, and from the symmetry observed in the TEM images, it is likely that the (101) twin plane passes through the center of icosahedron located at the origin. This model was tested using the method of periodic continuation. Resulting images compare favorably with experimental images, thus supporting the structural model. The introduction of a (101) twin plane through the origin creates distortions to the icosahedral linkages as well as to the intra-icosahedral bonding. This increases the inequivalence of adjacent icosahedral sites along the twin plane, and thereby increases the likelihood of bipolaron hopping.

Skeletal elements of crinoid echinoderms: High-resolution structural and microanalytical results

1983 ◽  
Vol 41 ◽  
pp. 194-195
Author(s):  
D. F. Blake ◽  
L. F. Allard ◽  
D. R. Peacor
Keyword(s):  
High Resolution ◽  
Marine Invertebrates ◽  
Sea Urchins ◽  
Structural Features ◽  
Sea Stars ◽  
High Resolution Tem ◽  
Relationship Of ◽  
The Relationship ◽  
Insight Into

Echinodermata is a phylum of marine invertebrates which has been extant since Cambrian time (c.a. 500 m.y. before the present). Modern examples of echinoderms include sea urchins, sea stars, and sea lilies (crinoids). The endoskeletons of echinoderms are composed of plates or ossicles (Fig. 1) which are with few exceptions, porous, single crystals of high-magnesian calcite. Despite their single crystal nature, fracture surfaces do not exhibit the near-perfect {10.4} cleavage characteristic of inorganic calcite. This paradoxical mix of biogenic and inorganic features has prompted much recent work on echinoderm skeletal crystallography. Furthermore, fossil echinoderm hard parts comprise a volumetrically significant portion of some marine limestones sequences. The ultrastructural and microchemical characterization of modern skeletal material should lend insight into: 1). The nature of the biogenic processes involved, for example, the relationship of Mg heterogeneity to morphological and structural features in modern echinoderm material, and 2). The nature of the diagenetic changes undergone by their ancient, fossilized counterparts. In this study, high resolution TEM (HRTEM), high voltage TEM (HVTEM), and STEM microanalysis are used to characterize tha ultrastructural and microchemical composition of skeletal elements of the modern crinoid Neocrinus blakei.

High-resolution EM study of submicrometer-grained Al-Mg solid solution alloys

1995 ◽  
Vol 53 ◽  
pp. 524-525
Author(s):  
Z. Horita ◽  
D. J. Smith ◽  
M. Furukawa ◽  
M. Nemoto ◽  
R. Z. Valiev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
High Resolution ◽  
Grain Boundaries ◽  
Energy State ◽  
High Energy ◽  
Grain Structure ◽  
Boundary Structure ◽  
Solid Solution Alloy ◽  
Average Grain Size

It is possible to produce metallic materials with submicrometer-grained (SMG) structures by imposing an intense plastic strain under quasi-hydrostatic pressure. Studies using conventional transmission electron microscopy (CTEM) showed that many grain boundaries in the SMG structures appeared diffuse in nature with poorly defined transition zones between individual grains. The implication of the CTEM observations is that the grain boundaries of the SMG structures are in a high energy state, having non-equilibrium character. It is anticipated that high-resolution electron microscopy (HREM) will serve to reveal a precise nature of the grain boundary structure in SMG materials. A recent study on nanocrystalline Ni and Ni3Al showed lattice distortion and dilatations in the vicinity of the grain boundaries. In this study, HREM observations are undertaken to examine the atomic structure of grain boundaries in an SMG Al-based Al-Mg alloy.An Al-3%Mg solid solution alloy was subjected to torsion straining to produce an equiaxed grain structure with an average grain size of ~0.09 μm.

Design of a Field-Emission Gun for the Phillips CM20/STEM microscope

1990 ◽  
Vol 48 (2) ◽  
pp. 100-101
Author(s):  
P.M. Mul ◽  
B.J.M. Bormans ◽  
L. Schaap
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Analytical Electron Microscopy ◽  
Emission Region ◽  
Attractive Alternative ◽  
Electron Holography ◽  
Field Emitter ◽  
Field Emitters ◽  
Resolution Electron ◽  
High Resolution Tem

The first Field Emission Guns (FEG) on TEM/STEM instruments were introduced by Philips in 1977. In the past decade these EM400-series microscopes have been very successful, especially in analytical electron microscopy, where the high currents in small probes are particularly suitable. In High Resolution Electron Holography, the high coherence of the FEG has made it possible to approach atomic resolution.Most of these TEM/STEM systems are based on a cold field emitter (CFE). There are, however, a number of disadvantages to CFE’s, because of their very small emission region: the maximum current is limited (a strong disadvantage for high-resolution TEM imaging) and the emission is unstable, requiring special measures to reduce the strong FEG-induced noise. Thermal field emitters (TFE), i.e. a zirconiated field emitter source operating in the thermal or Schottky mode, have been shown to be a viable and attractive alternative to CFE’s. TFE’s have larger emission regions, providing much higher maximum currents, better stability, and reduced sensitivity to vacuum conditions as well as mechanical and electrical interferences.

High-Temperature Instability of A Cr2Nb-Nb(Cr) Microlaminate Composite

1996 ◽  
Vol 54 ◽  
pp. 374-375
Author(s):  
M. Larsen ◽  
R.G. Rowe ◽  
D.W. Skelly
Keyword(s):  
Heat Treatment ◽  
Solid Solution ◽  
High Temperature ◽  
Elevated Temperatures ◽  
Aircraft Engine ◽  
Lattice Parameter ◽  
Microstructural Stability ◽  
Elevated Temperature Strength ◽  
Cross Sectional ◽  
Bcc Structure

Microlaminate composites consisting of alternating layers of a high temperature intermetallic compound for elevated temperature strength and a ductile refractory metal for toughening may have uses in aircraft engine turbines. Microstructural stability at elevated temperatures is a crucial requirement for these composites. A microlaminate composite consisting of alternating layers of Cr2Nb and Nb(Cr) was produced by vapor phase deposition. The stability of the layers at elevated temperatures was investigated by cross-sectional TEM.The as-deposited composite consists of layers of a Nb(Cr) solid solution with a composition in atomic percent of 91% Nb and 9% Cr. It has a bcc structure with highly elongated grains. Alternating with this Nb(Cr) layer is the Cr2Nb layer. However, this layer has deposited as a fine grain Cr(Nb) solid solution with a metastable bcc structure and a lattice parameter about half way between that of pure Nb and pure Cr. The atomic composition of this layer is 60% Cr and 40% Nb. The interface between the layers in the as-deposited condition appears very flat (figure 1). After a two hour, 1200 °C heat treatment, the metastable Cr(Nb) layer transforms to the Cr2Nb phase with the C15 cubic structure. Grain coarsening occurs in the Nb(Cr) layer and the interface between the layers roughen. The roughening of the interface is a prelude to an instability of the interface at higher heat treatment temperatures with perturbations of the Cr2Nb grains penetrating into the Nb(Cr) layer.

Study of Tip-Surface Interactions in Scanning Tunneling Microscopy (STM) by Reflection Electron Microscopy (REM)

1990 ◽  
Vol 48 (1) ◽  
pp. 320-321
Author(s):  
W. Lo ◽  
J.C.H. Spence ◽  
M. Kuwabara
Keyword(s):  
High Resolution ◽  
Elastic Strain ◽  
Tunneling Current ◽  
Surface Damage ◽  
Surface Interactions ◽  
Graphite Surface ◽  
Scanning Tunneling ◽  
Large Area ◽  
Tunneling Microscopy ◽  
High Resolution Tem

Work on the integration of STM with REM has demonstrated the usefulness of this combination. The STM has been designed to replace the side entry holder of a commercial Philips 400T TEM. It allows simultaneous REM imaging of the tip/sample region of the STM (see fig. 1). The REM technique offers nigh sensitivity to strain (<10−4) through diffraction contrast and high resolution (<lnm) along the unforeshortened direction. It is an ideal technique to use for studying tip/surface interactions in STM.The elastic strain associated with tunnelling was first imaged on cleaved, highly doped (S doped, 5 × 1018cm-3) InP(110). The tip and surface damage observed provided strong evidence that the strain was caused by tip/surface contact, most likely through an insulating adsorbate layer. This is consistent with the picture that tunnelling in air, liquid or ordinary vacuum (such as in a TEM) occurs through a layer of contamination. The tip, under servo control, must compress the insulating contamination layer in order to get close enough to the sample to tunnel. The contaminant thereby transmits the stress to the sample. Elastic strain while tunnelling from graphite has been detected by others, but never directly imaged before. Recent results using the STM/REM combination has yielded the first direct evidence of strain while tunnelling from graphite. Figure 2 shows a graphite surface elastically strained by the STM tip while tunnelling (It=3nA, Vtip=−20mV). Video images of other graphite surfaces show a reversible strain feature following the tip as it is scanned. The elastic strain field is sometimes seen to extend hundreds of nanometers from the tip. Also commonly observed while tunnelling from graphite is an increase in the RHEED intensity of the scanned region (see fig.3). Debris is seen on the tip and along the left edges of the brightened scan region of figure 4, suggesting that tip abrasion of the surface has occurred. High resolution TEM images of other tips show what appear to be attached graphite flakes. The removal of contamination, possibly along with the top few layers of graphite, seems a likely explanation for the observed increase in RHEED reflectivity. These results are not inconsistent with the “sliding planes” model of tunnelling on graphite“. Here, it was proposed that the force due to the tunnelling probe acts over a large area, causing shear of the graphite planes when the tip is scanned. The tunneling current is then modulated as the planes of graphite slide in and out of registry. The possiblity of true vacuum tunnelling from the cleaned graphite surface has not been ruled out. STM work function measurements are needed to test this.

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

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