Photo-induced Dissociation and Optical Cross Section of Si-H and S-H Complexes in GaAs and AlGaAs

2002 ◽  
Vol 719 ◽  
Author(s):  
M. Barbé ◽  
F. Bailly ◽  
J. Chevallier ◽  
S. Silvestre ◽  
D. Loridant-Bernard ◽  
...  

AbstractIn GaAs, (Si,H) complexes are efficiently dissociated at 300 K by photons with energies above 3.5 eV. Their optical cross-section is 10-19-10-18 cm2. This dissociation is the result of an electronic excitation of the Si-H bond of the complex from a bonding state to an antibonding state. (Si,H) and (S,H) complexes in AlGaAs alloys are also dissociated under UV illumination with optical cross-sections similar to GaAs. In passivated 2D AlGaAs-GaAs heterostructures, the evolution of the extra sheet carrier concentration at low photon densities presents a loss of free carriers attributed to the filling of surface states. In AlGaAs and in 2D AlGaAs-GaAs heterostructures, the replacement of hydrogen by deuterium in the complexes shows that the (Si,D) and (S,D) complexes are significantly more stable than the (Si,H) and (S,H) complexes as previously found in GaAs:Si,H.

1980 ◽  
Vol 58 (10) ◽  
pp. 1518-1523 ◽  
Author(s):  
E. Grant Jones

Cross sections are reported for reactions of Kr+ with Kr at collision energies below 50 eV (cm) to excite the KrI resonance radiation from the 5s[3/2]10 and 5s′[1/2]10 levels. Reaction occurs by the transfer of translational energy into internal energy and each reaction is characterized by a kinetic energy threshold. Significant effects on the cross section are observed arising from variation of the J-state of the reacting Kr+ beam. The reactions are interpreted as collisional excitation occurring by means of a potential energy curve crossing in the short-range interaction region.


2014 ◽  
Vol 41 (2) ◽  
pp. 160-167 ◽  
Author(s):  
Natalia Kijek ◽  
Alicja Chruścińska

Abstract The so-called thermal “cleaning” applied in thermoluminescence analysis allows distinguishing TL signal originating from different traps of comparable thermal depths. Here, the detailed study on the suitability of a similar approach — which can be called optical “cleaning” — for the analysis of OSL process has been carried out by means of computer modelling. The optical “cleaning” is realized by short optical stimulation applied directly after irradiation. It turns out that this approach does not help to separate signals related to various traps having similar optical cross-section (OCS) values. For some sets of trap parameters, sufficiently good reconstruction of the trap optical cross-sections can be achieved by the analysis of the conventional OSL curve obtained directly after sample irradiation, while the OSL curve analysis after “cleaning” does not provide any additional data. For other cases the analysis of both curves with and without “cleaning” leads to optical cross-section values different from those assumed in the model, but just in such situations the optical “cleaning” can be helpful. The differences between the OSL components of the conventional curve and the one obtained after “cleaning” can be used as indicators of an incompatibility of the trap parameters obtained from the OSL analysis with their actual values.


Author(s):  
J. P. Colson ◽  
D. H. Reneker

Polyoxymethylene (POM) crystals grow inside trioxane crystals which have been irradiated and heated to a temperature slightly below their melting point. Figure 1 shows a low magnification electron micrograph of a group of such POM crystals. Detailed examination at higher magnification showed that three distinct types of POM crystals grew in a typical sample. The three types of POM crystals were distinguished by the direction that the polymer chain axis in each crystal made with respect to the threefold axis of the trioxane crystal. These polyoxymethylene crystals were described previously.At low magnifications the three types of polymer crystals appeared as slender rods. One type had a hexagonal cross section and the other two types had rectangular cross sections, that is, they were ribbonlike.


Author(s):  
R.D. Leapman ◽  
P. Rez ◽  
D.F. Mayers

Microanalysis by EELS has been developing rapidly and though the general form of the spectrum is now understood there is a need to put the technique on a more quantitative basis (1,2). Certain aspects important for microanalysis include: (i) accurate determination of the partial cross sections, σx(α,ΔE) for core excitation when scattering lies inside collection angle a and energy range ΔE above the edge, (ii) behavior of the background intensity due to excitation of less strongly bound electrons, necessary for extrapolation beneath the signal of interest, (iii) departures from the simple hydrogenic K-edge seen in L and M losses, effecting σx and complicating microanalysis. Such problems might be approached empirically but here we describe how computation can elucidate the spectrum shape.The inelastic cross section differential with respect to energy transfer E and momentum transfer q for electrons of energy E0 and velocity v can be written as


Author(s):  
Xudong Weng ◽  
Peter Rez

In electron energy loss spectroscopy, quantitative chemical microanalysis is performed by comparison of the intensity under a specific inner shell edge with the corresponding partial cross section. There are two commonly used models for calculations of atomic partial cross sections, the hydrogenic model and the Hartree-Slater model. Partial cross sections could also be measured from standards of known compositions. These partial cross sections are complicated by variations in the edge shapes, such as the near edge structure (ELNES) and extended fine structures (ELEXFS). The role of these solid state effects in the partial cross sections, and the transferability of the partial cross sections from material to material, has yet to be fully explored. In this work, we consider the oxygen K edge in several oxides as oxygen is present in many materials. Since the energy window of interest is in the range of 20-100 eV, we limit ourselves to the near edge structures.


Author(s):  
P.A. Crozier

Absolute inelastic scattering cross sections or mean free paths are often used in EELS analysis for determining elemental concentrations and specimen thickness. In most instances, theoretical values must be used because there have been few attempts to determine experimental scattering cross sections from solids under the conditions of interest to electron microscopist. In addition to providing data for spectral quantitation, absolute cross section measurements yields useful information on many of the approximations which are frequently involved in EELS analysis procedures. In this paper, experimental cross sections are presented for some inner-shell edges of Al, Cu, Ag and Au.Uniform thin films of the previously mentioned materials were prepared by vacuum evaporation onto microscope cover slips. The cover slips were weighed before and after evaporation to determine the mass thickness of the films. The estimated error in this method of determining mass thickness was ±7 x 107g/cm2. The films were floated off in water and mounted on Cu grids.


Author(s):  
Stanley J. Klepeis ◽  
J.P. Benedict ◽  
R.M Anderson

The ability to prepare a cross-section of a specific semiconductor structure for both SEM and TEM analysis is vital in characterizing the smaller, more complex devices that are now being designed and manufactured. In the past, a unique sample was prepared for either SEM or TEM analysis of a structure. In choosing to do SEM, valuable and unique information was lost to TEM analysis. An alternative, the SEM examination of thinned TEM samples, was frequently made difficult by topographical artifacts introduced by mechanical polishing and lengthy ion-milling. Thus, the need to produce a TEM sample from a unique,cross-sectioned SEM sample has produced this sample preparation technique.The technique is divided into an SEM and a TEM sample preparation phase. The first four steps in the SEM phase: bulk reduction, cleaning, gluing and trimming produces a reinforced sample with the area of interest in the center of the sample. This sample is then mounted on a special SEM stud. The stud is inserted into an L-shaped holder and this holder is attached to the Klepeis polisher (see figs. 1 and 2). An SEM cross-section of the sample is then prepared by mechanically polishing the sample to the area of interest using the Klepeis polisher. The polished cross-section is cleaned and the SEM stud with the attached sample, is removed from the L-shaped holder. The stud is then inserted into the ion-miller and the sample is briefly milled (less than 2 minutes) on the polished side. The sample on the stud may then be carbon coated and placed in the SEM for analysis.


The work of multilayer glass structures for central and eccentric compression and bending are considered. The substantiation of the chosen research topic is made. The description and features of laminated glass for the structures investigated, their characteristics are presented. The analysis of the results obtained when testing for compression, compression with bending, simple bending of models of columns, beams, samples of laminated glass was made. Overview of the types and nature of destruction of the models are presented, diagrams of material operation are constructed, average values of the resistance of the cross-sections of samples are obtained, the table of destructive loads is generated. The need for development of a set of rules and guidelines for the design of glass structures, including laminated glass, for bearing elements, as well as standards for testing, rules for assessing the strength, stiffness, crack resistance and methods for determining the strength of control samples is emphasized. It is established that the strength properties of glass depend on the type of applied load and vary widely, and significantly lower than the corresponding normative values of the strength of heat-strengthened glass. The effect of the connecting polymeric material and manufacturing technology of laminated glass on the strength of the structure is also shown. The experimental values of the elastic modulus are different in different directions of the cross section and in the direction perpendicular to the glass layers are two times less than along the glass layers.


Author(s):  
Frank Altmann ◽  
Jens Beyersdorfer ◽  
Jan Schischka ◽  
Michael Krause ◽  
German Franz ◽  
...  

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.


2012 ◽  
Vol 27 (2) ◽  
pp. 264-269 ◽  
Author(s):  
Christian Lorbach ◽  
Ulrich Hirn ◽  
Johannes Kritzinger ◽  
Wolfgang Bauer

Abstract We present a method for 3D measurement of fiber cross sectional morphology from handsheets. An automated procedure is used to acquire 3D datasets of fiber cross sectional images using an automated microtome and light microscopy. The fiber cross section geometry is extracted using digital image analysis. Simple sample preparation and highly automated image acquisition and image analysis are providing an efficient tool to analyze large samples. It is demonstrated that if fibers are tilted towards the image plane the images of fiber cross sections are always larger than the true fiber cross section geometry. In our analysis the tilting angles of the fibers to the image plane are measured. The resulting fiber cross sectional images are distorted to compensate the error due to fiber tilt, restoring the true fiber cross sectional shape. We use an approximated correction, the paper provides error estimates of the approximation. Measurement results for fiber wall thickness, fiber coarseness and fiber collapse are presented for one hardwood and one softwood pulp.


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