Deposition, Recrystallization, and Epitaxy of Silicon, Germanium, and GaAs on Fibers and Metal Wires for Optoelectronic Device Applications

2002 ◽  
Vol 736 ◽  
Author(s):  
Michael G. Mauk ◽  
Bryan W. Feyock ◽  
Jeremy R. Balliet ◽  
Todd R. Ruffins
Keyword(s):  
Silicon Germanium ◽  
Semiconductor Device ◽  
Coupling Efficiency ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Optical Coupling ◽  
Device Applications ◽  
Metal Wires ◽  
Cladding Layers

ABSTRACTSemiconductor p-n junctions formed in a cylindrical geometry as concentric cladding layers surrounding a wire or fiber ‘substrate’ could have significant advantages for optoelectronic devices such as LEDs and solar cells, especially with regard to optical coupling efficiency and high-throughput manufacturing. Fiber-based semiconductor device components may also prove useful in conformable electronics or electrotextiles, and for giant -area flexible circuits. We describe techniques and results for chemical vapor deposition and melt coating to form 2- to 50-micron thick cladding layers of silicon or germanium on various types of fibers and refractory metals. These Ge or Si cladding layers can be recrystallized to achieve large (several millimeters or greater) grains oriented along the axis of the fiber. Additional GaAs cladding layers are grown on the recrystallized Ge or Si by vapor-phase epitaxy or metallic solution growth. p-n junctions are formed by diffusion or epitaxy. Light-sensitive diodes have been fabricated in these structures.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

InAs Quantum Dots for Optoelectronic Device Applications

2004 ◽  
Vol 829 ◽  
Author(s):  
K. Stewart ◽  
S. Barik ◽  
M. Buda ◽  
H. H. Tan ◽  
C. Jagadish
Keyword(s):  
Quantum Dots ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Organic Chemical ◽  
Group V ◽  
Inas Quantum Dots ◽  
Group Iii ◽  
Device Applications ◽  
Metal Organic

ABSTRACTIn this paper we discuss the growth of self-assembled InAs quantum dots (QDs) on both GaAs and InP substrates by low pressure Metal Organic Chemical Vapor Deposition. The influence of various growth parameters, such as the deposition time, the QD overlayer growth temperature, the V/III ratio and the group III and/or group V interdiffusion on QD formation are discussed and compared for the two systems. Stacking issues and preliminary results for an InAs/GaAs QD laser are also presented.

scholarly journals Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials

Research ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-35
Author(s):  
Ziwei Li ◽  
Boyi Xu ◽  
Delang Liang ◽  
Anlian Pan
Keyword(s):  
Light Emission ◽  
2D Materials ◽  
Scientific Discovery ◽  
Optoelectronic Devices ◽  
Polarized Light ◽  
Optoelectronic Device ◽  
Raman Shift ◽  
Novel Device ◽  
Device Applications ◽  
New Material

The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.

Al rich AlN/AlGaN Quantum Wells

2006 ◽  
Vol 955 ◽  
Author(s):  
Talal Mohammed Ahmad Al tahtamouni ◽  
Neeraj Nepal ◽  
Jingyu Lin ◽  
Hongxing Jiang
Keyword(s):  
Quantum Wells ◽  
Vapor Deposition ◽  
Quantum Confinement ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Peak Position ◽  
Emission Efficiency ◽  
Device Applications ◽  
Deep Ultraviolet

ABSTRACTTwo sets of AlN/AlxGa1−xN quantum wells (QW) have been grown by metalorganic chemical vapor deposition (MOCVD). The first set consists of five samples of AlN/AlxGa1−xN QWs with (x ∼ 0.65) with well width, Lw, varying from 1 to 3 nm. The second set consists of four samples of AlN/AlxGa1−xN with (Lw = 1.5 nm) with Al composition, x, varying from 0.70 to 0.85. Low temperature photoluminescence (PL) spectroscopy has been employed to study the Lw dependence of the PL spectral peak position, emission efficiency, and line width. Our results have shown that these AlN/AlGaN QW structures exhibit polarization fields of ∼ 4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with Lw between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on Lw yielded a linear relationship. The implications of our results on deep ultraviolet (UV) optoelectronic device applications are also discussed.

Quantum wires by direct laser fabrication

MRS Advances ◽  
2016 ◽  
Vol 1 (28) ◽  
pp. 2065-2069
Author(s):  
Anahita Haghizadeh ◽  
Haeyeon Yang
Keyword(s):  
Self Assembly ◽  
Quantum Wires ◽  
Optoelectronic Devices ◽  
Optoelectronic Device ◽  
Laser Fabrication ◽  
Growth Technique ◽  
Limited Success ◽  
Direct Laser ◽  
Device Applications ◽  
Direct Laser Fabrication

ABSTRACTFor optoelectronic device applications, quantum wires can be used as active media due to their unique physical properties. However, conventional approaches such as the self-assembly via the Stranski-Krastanov (S-K) growth technique have a limited success in their applications toward optoelectronic devices including photovoltaics and solar cells. A novel fabrication mechanism for quality quantum wires has been discovered. The laser fabricated nanowires semiconductor surfaces can have width and height as small as 30 and 5 nm, respectively while the density is one per 200 nm.

scholarly journals Studies of Parylene/Silicone-Coated Soft Bio-Implantable Optoelectronic Device

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 404 ◽  
Author(s):  
Gunchul Shin
Keyword(s):  
Fiber Optics ◽  
Optoelectronic Devices ◽  
Protective Layer ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Optoelectronic Device ◽  
Living Body ◽  
Biological Technology ◽  
Long Time

Optogenetics is a new neuroscience technology, consisting of biological technology that activates a nerve by light and engineering technology that transmits light to the nerve. In order to transmit light to the target nerve, fiber optics or light-emitting devices have been inserted into the living body, while the motions or emotions of freely moving animals can be controlled using a wirelessly operated optoelectronic device. However, in order to keep optoelectronic devices small in size and operational for a long time in vivo, the need for a thin but robust protective layer has emerged. In this paper, we developed a protective layer, consisting of Parylene and silicone that can protect soft optoelectronic devices inside saline solution for a long time. A chemical vapor deposited Parylene C film between the polydimethylsiloxane layers showed promising optical, mechanical, and water-barrier properties. We expect that these protective layers can be used as an encapsulation film on bio-implantable devices, including wireless optogenetic applications.

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