Transparent Transistors Based on Semiconducting Oxides

2003 ◽  
Vol 786 ◽  
Author(s):  
Y.W. Kwon ◽  
Y. Li ◽  
Y.W. Heo ◽  
M. Jones ◽  
Vijay ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Field Effect Transistors ◽  
Dielectric Strength ◽  
Charge Densities ◽  
Low Leakage ◽  
Active Layers ◽  
Low Leakage Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
High Conductance

ABSTRACTThe synthesis and properties of oxide-based thin film transistors (TFTs) is reported using pulsed laser deposition. The field effect transistors use ZnO as the channel material. Low leakage current density is achieved with amorphous (CeTb)MgAl11O19 (CTMA) serving as the gate oxide, whose dielectric strength is measured to be > 5MV/cm for structures fabricated on Indium Tin oxide (ITO) substrates. Capacitance-voltage properties show that n-type active layers are realized with undoped ZnO. Charge densities in undoped ZnO are measured to be 1018 to 1019 / cm3 using Hall measurement and CV plots. Current-voltage measurements for TFT operation are reported. Channel materials on patterned substrates show high conductance and modulation of channel conductance. C-V measurements with MOS structure using doped ZnO and ZnxMg1-xO will also be described. The properties of depletion mode TFTs fabricated with doped and undoped oxide channel will be discussed in detail.

A Study of Pt/AlN/6H-SiC MIS Structures for Device Applications

2000 ◽  
Vol 622 ◽  
Author(s):  
Margarita P. Thompson ◽  
Gregory W. Auner ◽  
Changhe Huang ◽  
James N. Hilfiker
Keyword(s):  
Plasma Source ◽  
Film Structure ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Current Voltage ◽  
Aln Film ◽  
Capacitance Voltage ◽  
Device Applications ◽  
Current Densities ◽  
Mis Structures

ABSTRACTAlN films with thicknesses from 53 to 79 nm were deposited on 6H-SiC substrates via Plasma Source Molecular Beam Epitaxy (PSMBE). The influence of deposition temperature on the growth mode and film roughness was assessed. The optical constants of the films in the range 0.73-8.75 eV were determined using spectroscopic ellipsometry. Pt/AlN/6H-SiC MIS structures were created and current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed at room temperature and at 250°C. Most of the MIS structures showed rectifying I-V characteristics regardless of growth temperature. A 120-nm-thick AlN film was deposited at 500°C. MIS structures created on this film showed a very low leakage current densities of 6×10−8 A/cm2. The dielectric constant of the film was estimated at approximately 9. The relation between film structure and electrical properties of the films is discussed.

STUDY OF ORGANIC THIN FILM TRANSISTOR WITH PHOTOPATTERNED GATE DIELECTRIC

2012 ◽  
Vol 26 (31) ◽  
pp. 1250204 ◽  
Author(s):  
HONGGUANG XU ◽  
FENG RAN ◽  
YUAN JI ◽  
JIMEI ZHANG ◽  
WENQING ZHU
Keyword(s):  
Indium Tin Oxide ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Dielectric Thickness ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Ito Glass

In order to investigate the feasibility of gating organic field-effect transistors (OFETs) using a photosensitive photoresist material, pentacene-based OFETs were fabricated on indium tin oxide (ITO) glass. The gate dielectric was found to be easily patterned by spin coating and UV exposure, and has an excellent surface roughness of 0.22 nm and good insulating properties, resulting in a low leakage current (49 nA at 2 MV/cm) at a dielectric thickness of 290 nm. The OFET with photopatterned gate dielectric exhibited good electric characteristics, including a high field-effect mobility of 0.15 cm2/Vs, a threshold voltage of -9.9 V, and on/off current ratio of ~104. The high matching of surface free energy between the gate dielectric and pentacene is proved to be contributed to the good performance of the device.

scholarly journals Гетеробарьерные варакторы с неоднородно легированными модулирующими слоями

2019 ◽  
Vol 45 (20) ◽  
pp. 51
Author(s):  
Н.А. Малеев ◽  
М.А. Бобров ◽  
А.Г. Кузьменков ◽  
А.П. Васильев ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Numerical Model ◽  
Leakage Current ◽  
Molecular Beam ◽  
Voltage Characteristic ◽  
Doping Profile ◽  
Published Data ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Inp Substrate ◽  
Capacitance Voltage

Optimal capacitance-voltage characteristic is critical for heterobarrier varactor diode (HBV) performance in terms of multiplication efficiency in mm- and sub-mm wave ranges. Numerical model of capacitance-voltage characteristics and leakage current for HBV with arbitrary heterostructure composition and doping profile was verified on published data and original experimental results. Designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded with non-uniformly doped n-InGaAs modulation layers was grown by molecular-beam epitaxy on InP substrate and test HBV diodes have been fabricated. Test HBV diodes demonstrate capacitance-voltage characteristics with cosine shape at bias voltage up to two volts, increased capacitance ratio and low leakage current values.

Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors

1987 ◽  
Vol 34 (8) ◽  
pp. 1650-1657 ◽  
Author(s):  
J. Baek ◽  
M.S. Shur ◽  
R.R. Daniels ◽  
D.K. Arch ◽  
J.K. Abrokwah ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Voltage ◽  
Capacitance Voltage

scholarly journals Effect of catalyst HF concentration on the electrical characteristics of ultra low-k materials

2012 ◽  
Vol 6 (2) ◽  
pp. 97-101 ◽  
Author(s):  
Zhi-Wei He ◽  
Shi-Qiu Zhu ◽  
Sheng-Li Wang ◽  
Zheng Qi ◽  
Yu-Yuan Guan
Keyword(s):  
Dielectric Constant ◽  
Sol Gel ◽  
Breakdown Field ◽  
Moisture Resistance ◽  
Electrical Characteristics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Sol Gel Process ◽  
Capacitance Voltage ◽  
Low K

The effects of catalyst HF concentration on the dielectric and electrical properties of SiOF films are discussed. From the current density-voltage and capacitance-voltage curves, we observed that the film catalyzed with the special concentration of HF (the ratio of HF/H2O = 1/5) shows good moisture resistance, low leakage current (10-11 A/cm2 at 1 MV/cm) and high breakdown field (6 MV/cm), which can be explained by the results of Fourier transform infrared spectra. The dielectric constant value is also very low and reaches about 1.75 after annealing at the temperature of 450?C. Therefore, the concentration of HF catalyst is an important factor in the sol-gel process.

Capacitance-Voltage Characterization of Pulsed Plasma Polymerized Allylamine Dielectrics

2002 ◽  
Vol 736 ◽  
Author(s):  
Yifan Xu ◽  
Paul Berger ◽  
Jai Cho ◽  
Richard B. Timmons
Keyword(s):  
Heat Treatment ◽  
Dielectric Constant ◽  
Film Deposition ◽  
Pulsed Plasma ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Heat Treated ◽  
Capacitance Voltage ◽  
Mobile Ions

ABSTRACTPolyallylamine films, deposited on Si wafers by radio frequency (RF) pulsed plasma polymerization (PPP), were employed as insulating layers of metal-insulator-semiconductor (MIS) capacitors. The insulating polymer films were deposited at substrate temperatures of 25°C and 100°C. Multiple frequency capacitance-voltage (C-V) measurements indicated that an in-situ heat treatment during film deposition increased the insulator dielectric constant. The dielectric constant, calculated from the C-V data, rose from 3.03 for samples with no heat treatment to 3.55 for samples with an in-situ heat treatment. For both sample sets, the I-V data demonstrate a low leakage current value (<20fA) up to 100V with an area of 0.0307 mm2, resulting in a current density of <0.65 pA/mm2. Hysteresis in the C-V curves with differing sweep directions was more pronounced for in-situ heat-treated samples indicative of positive mobile ions.

Boosting on Current Using Various Source Material for Dual Gate Tunnel Field Effect Transistor

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Priyadarshini N D ◽  
Nayana G H ◽  
P Vimala
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Source Material ◽  
Oxide Semiconductor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Dual Gate ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Tunnel Field Effect Transistors (TFET) have demonstrated to have likely applications in the cutting-edge low force and super low force semiconductors to substitute the conventional FETs. TFET will be able to provide steep inverse subthreshold swing slope also maintaining a low leakage current, making it an essential structure for limiting the power consumption in Metal Oxide Semiconductor FETs.In this paper, we are simulating different structures of TFET by varying source material to boost the ON current of the device. The different models are designed and simulated using Silvaco TCAD simulator and transfer characteristics are studied.

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