scholarly journals Tuning The Crystallographic Structure And Morphology Of Nanocrystalline CaB6 Films Deposited By DC Magnetron Sputtering

2015 ◽  
Vol 60 (2) ◽  
pp. 897-901 ◽  
Author(s):  
L. Zhang ◽  
G. Zhao ◽  
H. Liu ◽  
G. Min ◽  
H. Yu
Keyword(s):  
Grain Size ◽  
Magnetron Sputtering ◽  
Energy Dispersive Spectrometer ◽  
Argon Pressure ◽  
Raman Shift ◽  
Crystallographic Structure ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Crystallite Sizes

Abstract Through changing the argon pressure, CaB6 films with different crystallographic orientation and morphology on glass substrates were prepared by direct current (DC) magnetron sputtering method. The film textures, crystallite sizes, composition and morphology were investigated by a spectrum of characterizing techniques in terms of X-ray diffraction (XRD), field emission scanning electron microscopy with energy dispersive spectrometer (FESEM-EDS), atomic force microscopy (AFM), Raman shift spectroscopy. The influence of argon pressure on microstructure was studied. The average grain size increased with the argon pressure increasing from 0.8 Pa to 1.5 Pa. Meanwhile, the dominant crystal face changed from (110) to (100). Then the grain size decreased when the argon pressure increased to 2.0 Pa. The surface morphology evolved from typical cauliflower-like nanocrystalline clusters to faceted rectangular pyramids. It was found that considerable amount of argon atoms were trapped in the films. The formation process of CaB6 films was also analyzed in this paper.

AlSb THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING AND ANNEALING

2008 ◽  
Vol 22 (14) ◽  
pp. 2275-2283 ◽  
Author(s):  
WEIDONG CHEN ◽  
LIANGHUAN FENG ◽  
ZHI LEI ◽  
JINGQUAN ZHANG ◽  
FEFE YAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Efficiency ◽  
Dark Conductivity ◽  
Aluminum Antimonide ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Grain Size ◽  
P Type ◽  
20 Nm

Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates. The sputtering target consists of aluminum and antimony, and the area ratio of Al to Sb is 7:3, which is derived from research into the relationship between the deposition rates of both the metals and sputtering power. XRD and AFM measurements show that the as-deposited films are amorphous, but become polycrystalline with an average grain size of about 20 nm after annealing in an argon atmosphere. From optical absorption measurements of annealed AlSb films, a band gap of 1.56 eV has been demonstrated. Hall measurements show that the films are p-type semiconductors. The temperature dependence of dark conductivity tested in vacuum displays a linear lnσ to 1/T curve, which indicates a conductivity activation energy of around 0.61 eV.

scholarly journals Co/Cu/Co Pseudo Spin-Valve System Prepared by Magnetron Sputtering with Different Argon Pressure

2015 ◽  
Vol 644 ◽  
pp. 211-214 ◽  
Author(s):  
A.V. Svalov ◽  
A.N. Sorokin ◽  
P.A. Savin ◽  
Alfredo García-Arribas ◽  
A. Fernández ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Spin Valve ◽  
Spin Rotation ◽  
Argon Pressure ◽  
Dc Magnetron Sputtering ◽  
Soft Layer ◽  
Valve System ◽  
Magnetic Layers ◽  
Moderate Field ◽  
The Difference

Thin Co films were fabricated by DC magnetron sputtering. The effect of argon pressure on the microstructure, surface morphology and magnetic properties of the samples was systematically studied. It was found that with the increase of argon pressure, the sharpness of the crystalline texture of the samples declines, the roughness of film surfaces and the coercivity of the films increase. Based on these results, a Co/Cu/Co pseudo spin-valve system was designed and the corresponding structures were fabricated. The difference in coercivity of magnetic layers was obtained by deposition of the Co layers at different Ar pressures. Change of the resistance of this trilayer is induced at a moderate field by the spin rotation in the soft layer with lower coercivity.

Nanohardness of DC Magnetron Sputtered W – C Coatings as a Function of Composition and Residual Stresses

2015 ◽  
Vol 662 ◽  
pp. 107-110 ◽  
Author(s):  
Michal Novák ◽  
František Lofaj ◽  
Petra Hviščová ◽  
Rudolf Podoba ◽  
Marián Haršáni ◽  
...  
Keyword(s):  
Residual Stress ◽  
Residual Stresses ◽  
Magnetron Sputtering ◽  
Linear Increase ◽  
Indentation Modulus ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Compressive Stresses ◽  
Deposition Parameters

The effects of residual stresses in thin W-C based coatings were investigated with the aim to find their influence on nanohardness and indentation modulus. Ten samples of W-C based coatings were deposited on microslide glass substrates using DC magnetron sputtering at the identical deposition parameters. Their thickness was in the range from 500 to 600 nm. The residual stresses in the coatings varied from 1.5 GPa up to 4.4 GPa. Increase of residual stress caused linear increase of HITfrom 16 to 19.5 GPa. This increase was only the result of the compressive stresses. EITof the studied coatings was not sensitive to residual stresses and corresponded to 185 GPa ± 15 GPa.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Structural, Morphological and Adhesion Properties of Cofeb Thin Films Deposited by DC Magnetron Sputtering

2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Crystalline Structure ◽  
Glass Substrate ◽  
Intrinsic Stress ◽  
Dc Magnetron Sputtering ◽  
Adhesion Properties ◽  
Sputtering Power

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.

Structural and Morphological Studies of Cadmium Sulfide Nanostructures

2013 ◽  
Vol 795 ◽  
pp. 228-232 ◽  
Author(s):  
Abdulwahab S.Z. Lahewil ◽  
Y. Al-Douri ◽  
U. Hashim ◽  
Naser Mahmoud Ahmed
Keyword(s):  
Grain Size ◽  
Cadmium Sulfide ◽  
Spin Coating ◽  
Sol Gel ◽  
Theoretical Data ◽  
Glass Substrates ◽  
Morphological Studies ◽  
Average Grain Size ◽  
Cds Nanostructures ◽  
Semiconductor Properties

Cadmium sulfide (CdS) nanostructures were prepared with different spin coating speed 1000 and 3000 rpm and molarities of Cd:S to be 1.2 to 0.01 mol/L using sol-gel spin coating technique. It is found that the average grain size of CdS nanostructures deposited on glass substrates at 1000 and 3000 rpm is 43 to 4 nm respectively. The effect of grain size on the semiconductor properties are in agreement with experimental and theoretical data.

scholarly journals Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

2017 ◽  
Vol 35 (1) ◽  
pp. 173-180 ◽  
Author(s):  
A. Kavitha ◽  
R. Kannan ◽  
S. Rajashabala
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Physical Properties ◽  
Dc Magnetron Sputtering ◽  
Target Power ◽  
Reactive Gases ◽  
Hot Filament ◽  
Diode Mode

AbstractThe present paper describes the effect of target power on the properties of Ti thin films prepared by DC magnetron sputtering with (triode mode) and without (diode mode) supported discharge. The traditional diode magnetron sputtering with an addition of a hot filament has been used to sustain the discharge at a lower pressure. The effect of target power (60, 80, 100 and 120 W) on the physical properties of Ti thin films has been studied in diode and triode modes. XRD studies showed that the Ti thin films prepared at a target power up to 100 W in diode mode were amorphous in nature. The Ti thin films exhibited crystalline structure at much lower target power of 80 W with a preferred orientation along (0 0 2) plane. The grain size of Ti thin films prepared in triode mode increased from 64 nm to 80 nm, whereas in diode mode, the grain size increased from 2 nm to 5 nm. EDAX analysis confirmed that the incorporation of reactive gases was lower in triode mode compared to diode mode. The electrical resistivity of Ti thin films deposited in diode mode was found to be 85 µΩ⋅cm (target power 120 W). The electrical resistivity of Ti thin films in triode mode was found to be deceased to 15.2 µΩ⋅cm (target power 120 W).

Self-Diffusion as A Limiting Factor of a-SiGe Crystallization

1997 ◽  
Vol 469 ◽  
Author(s):  
F. Edelman ◽  
T. Raz ◽  
Y. Komem ◽  
P. Werner ◽  
W. Beyer ◽  
...  
Keyword(s):  
Grain Size ◽  
Nanocrystalline Structure ◽  
Limiting Factor ◽  
In Situ Tem ◽  
Large Area ◽  
Self Diffusion ◽  
Glass Substrates ◽  
Vacancy Generation ◽  
Nonequilibrium Vacancy ◽  
Average Grain Size

ABSTRACTHighly doped (∼1018 to 1021cm−3) polycrystalline Si1-xGex films, crystallized from amorphous (a) state at relative low temperatures, are prospective materials in a variety of applications, such as liquid-crystal displays, solar cells and integrated thermoelectric sensors on large-area glass substrates. Since the nature of the grains in the crystallized film defines properties such as carrier mobility, the nucleation and growth process of the a-SiGe films is of fundamental interest. We have studied the crystallization of undoped and highly doped (B or Ga) amorphous SiGe films. The films were deposited by RFCVD or molecular beam on oxidized (001)Si and for TEM study on cleaved NaCl. The incubation time and grain growth rate were studied by means of in situ TEM using a heating stage. The crystallization process in undoped SiGe followed Avrami relationship. An average grain size between 0.1 and 2μm was observed. However, the highly p-doped (with B or Ga) SiGe films crystallized to a stable nanocrystalline structure (grain size <10nm). The process of the a-SiGe crystallization is explained on the basis of self-diffusion. During the first stage, the nucleation of crystals is accompanied with nonequilibrium vacancy generation at the amorphous/crystalline interface. During the second stage, the growth of crystals takes place by vacancy outdiffusion which is hindered by B and Ga interaction with vacancies.

Influence of the Distance between Target and Substrate on the Properties of TGZO Films Prepared by DC Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 572-575 ◽  
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang ◽  
Ai Ping Zhou
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Transmittance ◽  
Xrd Patterns ◽  
Deposited Films

Ti-Ga co-doped ZnO thin films (TGZO) have been successfully prepared on glass substrates by DC magnetron sputtering at room temperature. The X-ray diffraction (XRD) patterns show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The distance between target and substrate was varied from 41 to 75 mm. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 75 to 46 mm. However, as the distance decreases further, the electrical resistivity increases. It is obtained that the lowest resistivity is 2.0610-4cm when the distance between target and substrate is 46 mm. In the visible region, the TGZO films show a high average transmittance of above 90 %.

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