EFFECT OF MAGNESIUM-COATED BORON PARTICLES ON BURNING CHARACTERISTICS OF SOLID FUELS IN HIGH-SPEED CROSSFLOWS

Author(s):  
K. K. Pace ◽  
T. A. Jarymowycz ◽  
V. Yang ◽  
Kenneth K. Kuo
2003 ◽  
Vol 800 ◽  
Author(s):  
Kenneth K. Kuo ◽  
Grant A. Risha ◽  
Brian J. Evans ◽  
Eric Boyer

ABSTRACTNano-sized energetic metals and boron particles (with dimensions less than 100 nanometers) possess desirable combustion characteristics such as high heats of combustion and fast energy release rates. Because of their capability to enhance performance, various metals have been introduced in solid propellant formulations, gel propellants, and solid fuels. There are many advantages of incorporating nano-sized materials into fuels and propellants, such as: 1) shortened ignition delay; 2) shortened burn times, resulting in more complete combustion in volume-limited propulsion systems; 3) enhanced heat-transfer rates from higher specific surface area; 4) greater flexibility in designing new energetic fuel/propellants with desirable physical properties; 5) nano-particles can act as a gelling agent to replace inert or low-energy gellants; 6) nano-sized particles can also be dispersed into high-temperature zone for direct oxidation reaction and rapid energy release, and 7) enhanced propulsive performance with increased density impulse. In view of these advantages, numerous techniques have been developed for synthesizing nano-particles of different sizes and shapes. To reduce any possible hazards associated with the handling of nano-sized particles as well as unwanted particle oxidation, various passivation procedures have been developed. Some of these coating materials could enhance the ignition and combustion behavior, others could increase the compatibility of the particles with the surrounding material. Many researchers have been actively engaged in the characterization of the ignition and combustion behavior of nano-sized particles as well as the assessment of performance enhancement of propellants and fuels containing energetic nano-particles. For example, solid fuels could contain a significant percentage of nano-sized particles to increase the mass-burning rate in hybrid rocket motors, the regression rate of solid propellants can be increased by several times when nano-sized particles are incorporated into the formulation. Specifically, hybrid motor data showed that the addition of 13% energetic aluminum powders can increase the linear regression rate of solid HTPB-based fuel by 123% in comparison to the non-aluminized HTPB fuel at a moderate gaseous oxidizer mass flow rate. Strand burner studies of two identical solid propellant formulations (one with 18% regular aluminum powder and the other with 9% aluminum replaced by Alex® powder) showed that nano-sized particles can increase the linear burning rate of solid propellants by 100%. In addition to solid fuels and propellants, spray combustion of bipropellants has been conducted using gel propellants impregnated with nano-sized boron particles as the fuel in a rocket engine. High combustion efficiencies were obtained from burning nano-sized boron particles contained in a non-toxic liquid-fuel spray. Materials characterization such as chemical analyses to determine the active aluminum content, density measurements, and imaging using an electron microscope have been performed on both neat nano-sized particles and mixtures containing the energetic materials. In general, using energetic nano-sized particles as a new design parameter, propulsion performance of future propellants and fuels can be greatly enhanced.


2014 ◽  
Vol 684 ◽  
pp. 76-82
Author(s):  
Hong Yuan Wang ◽  
Yi Hua Xu ◽  
Xu Hu ◽  
Zhuo Xiong Zeng

Three-dimensional two-phase flow in the typical double downside 90°afterburning chamber of boron based ducted rocket is numerically simulated by means of Realizable turbulence model, one-step eddy-dissipation combustion mode1 and the ignition and combustion mode of boron particles of KING with considering the film moving effect in the high-speed flow. The results show that co-swirl and counter-swirl air in the double side of inlet enters into afterburning chamber to make mixture of air and gas more fully and combustion efficiency increases with the increase of swirl number. Boron particles and total combustion efficiency with co-swirl is higher than counter-swirl when the swirl number is less than 0.179. On the contrary, the counter-swirl is higher than co-swirl when the swirl number greater than 0.385, the co-swirl is balance to the counter-swirl when the swirl number is about 0.2; the ignition time of boron particles is reduced with swirling air, its minimum can be attained when swirl number is 0.385.


Author(s):  
E.D. Wolf

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.


Author(s):  
N. Yoshimura ◽  
K. Shirota ◽  
T. Etoh

One of the most important requirements for a high-performance EM, especially an analytical EM using a fine beam probe, is to prevent specimen contamination by providing a clean high vacuum in the vicinity of the specimen. However, in almost all commercial EMs, the pressure in the vicinity of the specimen under observation is usually more than ten times higher than the pressure measured at the punping line. The EM column inevitably requires the use of greased Viton O-rings for fine movement, and specimens and films need to be exchanged frequently and several attachments may also be exchanged. For these reasons, a high speed pumping system, as well as a clean vacuum system, is now required. A newly developed electron microscope, the JEM-100CX features clean high vacuum in the vicinity of the specimen, realized by the use of a CASCADE type diffusion pump system which has been essentially improved over its predeces- sorD employed on the JEM-100C.


Author(s):  
William Krakow

In the past few years on-line digital television frame store devices coupled to computers have been employed to attempt to measure the microscope parameters of defocus and astigmatism. The ultimate goal of such tasks is to fully adjust the operating parameters of the microscope and obtain an optimum image for viewing in terms of its information content. The initial approach to this problem, for high resolution TEM imaging, was to obtain the power spectrum from the Fourier transform of an image, find the contrast transfer function oscillation maxima, and subsequently correct the image. This technique requires a fast computer, a direct memory access device and even an array processor to accomplish these tasks on limited size arrays in a few seconds per image. It is not clear that the power spectrum could be used for more than defocus correction since the correction of astigmatism is a formidable problem of pattern recognition.


Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.


Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions


Author(s):  
Brian Cross

A relatively new entry, in the field of microscopy, is the Scanning X-Ray Fluorescence Microscope (SXRFM). Using this type of instrument (e.g. Kevex Omicron X-ray Microprobe), one can obtain multiple elemental x-ray images, from the analysis of materials which show heterogeneity. The SXRFM obtains images by collimating an x-ray beam (e.g. 100 μm diameter), and then scanning the sample with a high-speed x-y stage. To speed up the image acquisition, data is acquired "on-the-fly" by slew-scanning the stage along the x-axis, like a TV or SEM scan. To reduce the overhead from "fly-back," the images can be acquired by bi-directional scanning of the x-axis. This results in very little overhead with the re-positioning of the sample stage. The image acquisition rate is dominated by the x-ray acquisition rate. Therefore, the total x-ray image acquisition rate, using the SXRFM, is very comparable to an SEM. Although the x-ray spatial resolution of the SXRFM is worse than an SEM (say 100 vs. 2 μm), there are several other advantages.


Author(s):  
J. E. Johnson

In the early years of biological electron microscopy, scientists had their hands full attempting to describe the cellular microcosm that was suddenly before them on the fluorescent screen. Mitochondria, Golgi, endoplasmic reticulum, and other myriad organelles were being examined, micrographed, and documented in the literature. A major problem of that early period was the development of methods to cut sections thin enough to study under the electron beam. A microtome designed in 1943 moved the specimen toward a rotary “Cyclone” knife revolving at 12,500 RPM, or 1000 times as fast as an ordinary microtome. It was claimed that no embedding medium was necessary or that soft embedding media could be used. Collecting the sections thus cut sounded a little precarious: “The 0.1 micron sections cut with the high speed knife fly out at a tangent and are dispersed in the air. They may be collected... on... screens held near the knife“.


Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.


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