scholarly journals Pedalium murex L.: Potential genetic resource for herbal medicine and mucilage

2021 ◽  
Author(s):  
Sujata Shekhar ◽  
Rajat Rathur ◽  
Rajat P Singh ◽  
Akhilesh Kumar
Keyword(s):  
Genetic Resource ◽  
Future Prospect ◽  
Growth Conditions ◽  
Reproductive Disorders ◽  
Pharmacological Profile ◽  
Traditional System ◽  
Vernacular Names ◽  
Botanical Description ◽  
Pedalium Murex ◽  
Environmental Requirement

Abstract Pedalium murex (Pedaliaceae), commonly known as large caltrops in English and bada gokharu in Hindi is an underutilized mucilaginous medicinal herb having multiple uses in traditional system of medicine. It is mainly used to cure reproductive disorders, like impotency in men, nocturnal emissions, gonorrhoea as well as leucorrhoea in women. It is also useful in the treatment of urinary and gastrointestinal tract disorders. The present paper deals with botanical identity, vernacular names, ecology, environmental requirement and growth conditions, origin and geographical distribution, morphological/botanical description, propagation and cultivation, usages as a source of food, mucilage, medicine and biodiesel, important Ayurvedic formulations, phytochemical and pharmacological profile, future prospect.

Phytochemistry, pharmacognosy and pharmacological profile of Abutilon indicum

2020 ◽  
Vol 5 (1) ◽  
pp. 7-11
Author(s):  
Jubilee R ◽  
Kaviarasu J ◽  
Kishore I ◽  
Keerthana S ◽  
Karthikayan N ◽  
...  
Keyword(s):  
Chemical Constituents ◽  
Research Work ◽  
Pharmacological Profile ◽  
Traditional System ◽  
The Family ◽  
Medicinal Properties ◽  
Abutilon Indicum

Abutilon indicum belongs to the family Malvaceae is known as Indian mallow commonly. The plant was traditionally claimed to possess many medicinal properties and was used in folklore and traditional system s of medicine like Ayurveda. It contains various chemical constituents like flavonoids, phenols, sterols, tannins etc. and was scientifically investigated for many activities like an immune stimulant, dieresis, anti-epileptic, anti-ulcer and anti-parasitic activities. This article reviews the research work that was performed on the plant to publish its phytochemistry, Pharmacognosy and Pharmacological profile of the plant.

Phyto-Pharmacological Profile of Wrightia tinctoria

2021 ◽  
pp. 301-308
Author(s):  
Niraj Kale ◽  
Sanket Rathod ◽  
Snehal More ◽  
Namdeo Shinde
Keyword(s):  
Health Care ◽  
Health Care System ◽  
Stem Bark ◽  
Present Review ◽  
Pharmacological Profile ◽  
Pharmacological Activities ◽  
Vernacular Names ◽  
Wrightia Tinctoria ◽  
Phytochemical Studies ◽  
Botanical Classification

Wrightia tinctoria is a medium sized ever green tree grows up to 18 m tall and to 20 cm which produces milky white latex from the leaves which is directly applied on inflammation. Since from ancient period this plant constantly been used as a source of medicine. This plant shows a very important component of the health care system in India. In ayurvedic system the drug activity of W.tinctoria is defined as titka, kashaya, rooksha, sita and katu. Various parts of this plant such as stem bark, leaves, flowers also seed have been known to have medicinal assets. Phytochemical studies have shown that it contains alkaloids, triterpenoids, steroids, flavonoids, phenolics, carbohydrates, lipids etc. Wrightia tinctoria has been allotted to have good analgesic, anti-inflammatory, anthelmintic, antiulcer, antidysentric, antidiabetic, anticancer, antipyretic activities as well as active in the treatment of psoriasis. The present review primed to describe the botanical classification, vernacular names, species, Pharmacognostical and Phytochemical Properties and pharmacological activities of the plant Wrightia tinctoria.

scholarly journals AN UPDATE ON PHARMACOLOGICAL PROFILE OF BOSWELLIA SERRATA

2019 ◽  
pp. 49-56
Author(s):  
Suneela Sunil Dhaneshwar
Keyword(s):  
Skin Diseases ◽  
Biological Properties ◽  
Current Status ◽  
Pharmacological Profile ◽  
Pharmacological Activities ◽  
Boswellia Serrata ◽  
Traditional System ◽  
Hexose Sugars ◽  
Wide Range ◽  
Urinary Disorder

Boswellia serrata (Burseraceae) is the most ancient and respected herbs in Ayurveda. In Unani system of medicine, oleo-gum resin of Boswellia serrata named Kundur played a prime ingredient role in modern quality perfumes. The gum is used as a remedy for treatment of illness especially skin diseases and rheumatism in Indian system of medicine (Sidha, Ayurvedic and Unani) for last diverse centuries. Salai guggul is one of the accepted drugs for various complaints such as dyspepsia, dysentery, lung diseases, urinary disorder, haemorrhoids and corneal ulcer in Unani system of medicine for the last several decades.The present article is aimed to provide an overview on various pharmacological activities of Boswellia serrata. The resin fraction of salai guggal is rich in boswellic acids and its essential oils that are composed of a mixture of mono, di and sesquiterpenes while gum fraction chiefly contains pentose and hexose sugars. The oleo-gum resin is quite popular among the practitioners of traditional system and possesses wide range of useful biological properties such as antiasthmatic, anticancer, antifungal, anticomplementary, antihyperlipidemic, antiinflammatory, antiarthritic, antirheumatic, antidiarrheal, antimicrobial, antifungal and analgesic.An exhaustive review of literature was performed using various databases on science direct, scopus, pubmed, google scholar and free patents online.This review is a sincere attempt to discuss and present the current status of pharmacological profile of Boswellia serrata.

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

Diffraction from arrays of antiphase boundaries in ordered III-V alloys

1987 ◽  
Vol 45 ◽  
pp. 312-313
Author(s):  
T. S. Kuan
Keyword(s):  
High Surface ◽  
Growth Conditions ◽  
Ternary Alloys ◽  
Local Growth ◽  
Antiphase Boundaries ◽  
Surface Mobility ◽  
Ordered Phases ◽  
Diffraction Patterns ◽  
Atomically Flat ◽  
Degree Of Order

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.

The value of Electron Microscope studies of imperfect natural diamonds

1990 ◽  
Vol 48 (4) ◽  
pp. 194-195
Author(s):  
J C Walmsley ◽  
A R Lang
Keyword(s):  
Electron Microscope ◽  
Classification Scheme ◽  
Natural Diamond ◽  
Sudden Change ◽  
Growth Conditions ◽  
Diamond Growth ◽  
Major Constituent ◽  
Natural Diamonds ◽  
Type Ia ◽  
Platelet Defects

Interest in the defects and impurities in natural diamond, which are found in even the most perfect stone, is driven by the fact that diamond growth occurs at a depth of over 120Km. They display characteristics associated with their origin and their journey through the mantle to the surface of the Earth. An optical classification scheme for diamond exists based largely on the presence and segregation of nitrogen. For example type Ia, which includes 98% of all natural diamonds, contain nitrogen aggregated into small non-paramagnetic clusters and usually contain sub-micrometre platelet defects on {100} planes. Numerous transmission electron microscope (TEM) studies of these platelets and associated features have been made e.g. . Some diamonds, however, contain imperfections and impurities that place them outside this main classification scheme. Two such types are described.First, coated-diamonds which possess gem quality cores enclosed by a rind that is rich in submicrometre sized mineral inclusions. The transition from core to coat is quite sharp indicating a sudden change in growth conditions, Figure 1. As part of a TEM study of the inclusions apatite has been identified as a major constituent of the impurity present in many inclusion cavities, Figure 2.

Role of the exosporial membrane in attachment and germination of C. sporogenes

1993 ◽  
Vol 51 ◽  
pp. 38-39
Author(s):  
B.J. Panessa-Warren ◽  
G.T. Tortora ◽  
J.B. Warren
Keyword(s):  
Enzymatic Degradation ◽  
Light Transmission ◽  
Extended Period ◽  
Growth Conditions ◽  
Clostridium Sporogenes ◽  
Radiation Chemical ◽  
Physical Trauma ◽  
Extended Contact ◽  
Cold Pressure

Some bacteria are capable of forming highly resistant spores when environmental conditions are not adequate for growth. Depending on the genus and species of the bacterium, these endospores are resistant in varying degrees to heat, cold, pressure, enzymatic degradation, ionizing radiation, chemical sterilants,physical trauma and organic solvents. The genus Clostridium, responsible for botulism poisoning, tetanus, gas gangrene and diarrhea in man, produces endospores which are highly resistant. Although some sporocides can kill Clostridial spores, the spores require extended contact with a sporocidal agent to achieve spore death. In most clinical situations, this extended period of treatment is not possible nor practical. This investigation examines Clostridium sporogenes endospores by light, transmission and scanning electron microscopy under various dormant and growth conditions, cataloging each stage in the germination and outgrowth process, and analyzing the role played by the exosporial membrane in the attachment and germination of the spore.

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

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