THE STUDY OF THE ELECTROPHYSICAL PROPERTIES OF A COMPOSITE MEMRISTOR-DIODE CROSSBAR AS A BASIS OF THE NEUROPROCESSOR HARDWARE IMPLEMENTATION

2020 ◽  
Vol 6 (3) ◽  
pp. 93-109
Author(s):  
Alexander D. Pisarev ◽  
Alexander N. Busygin ◽  
Andrey N. Bobylev ◽  
Alexey A. Gubin ◽  
Sergey Yu. Udovichenko
Keyword(s):  
Signal Processing ◽  
Electrophysical Properties ◽  
Discrete Elements ◽  
Voltage Bias ◽  
Current Voltage ◽  
Positive Voltage ◽  
New Association ◽  
Parasitic Currents ◽  
First Time ◽  
Self Learning

The aim of this article lies in checking the efficiency of memory and logic matrices. Achieving this has required producing a composite memristor-diode crossbar and studying its electrophysical properties. For these purposes, the authors have made a measuring bench, which consists of a composite memristor-diode crossbar, control peripheral circuitry, based on discrete elements with CMOS logic, and Keithley SourceMeter 2400. The silicon junction p-Si/n-Si has been chosen because its electrical properties better suit the Zenner diode’s requirements compared to the p-Si/ZnO junction. The memristor-diode crossbar with the TiN/Ti0,93Al0,07Ox/p-Si/n-Si/W structure was made with implementation of a new diode. The results show that the crossbar cell with a p-Si/n-Si diode has better rectifying properties in comparison with a p-Si/ZnOx diode, because the current in the crossbar cell with positive voltage bias is much higher than with negative voltage bias. Strong rectifying properties of the cell are necessary for the functioning of diode logic in the logic matrix and for memristor state recording in the logic and memory matrices. The study of electrophysical properties of the composite memristor-diode crossbar, measurement of current-voltage characteristics of the diode and composite memristor-diode crossbar cell and signal processing were performed. The signal processing was performed in the following modes: addition of output impulses of neurons and their routing to synapses of other neurons; multiplication of number matrix by vector, performed in the memory matrix with weighing and totalling of signals; and associative self-learning. For the first time, the generation of a new association (new knowledge) in the composite memristor-diode crossbar has been shown, as opposed to associative self-learning in existing hardware neural networks with discrete-memristors-based synapses. The change of crossbar cell’s output current caused by parasitic currents through adjacent cells has been determined. The results show that the control over Zenner diode characteristics allows reducing the power consumption of the composite crossbar. Obtained electrophysical characteristics prove the efficiency of the composite memristor-diode crossbar, intended for production of the memory and logic matrices.

Hot-point probe measurements of N-type and P-type ZnO films

2017 ◽  
Vol 34 (1) ◽  
pp. 30-34 ◽  
Author(s):  
Benedict Wen-Cheun Au ◽  
Kah-Yoong Chan ◽  
Yew-Keong Sin ◽  
Zi-Neng Ng
Keyword(s):  
Low Cost ◽  
Zno Films ◽  
Content Type ◽  
Conductivity Type ◽  
Current Voltage ◽  
Positive Voltage ◽  
Soldering Iron ◽  
P Type ◽  
First Time ◽  
Probe Measurements

Purpose This paper aims to develop a low-cost hot-point which can facilitate the conductivity type of N-type and P-type zinc oxide (ZnO) films. In this study, a diode was made out of the N-type and P-type ZnO films, and current-voltage (I-V) characteristic measurements were conducted. Design/methodology/approach A low-cost hot-point probe consists of a soldering iron station, digital multimeter and a pair of probes. The setup is adopted to identify N-type and P-type ZnO films. In particular, P-type films have been deployed for the first time. Findings Hot-point probe setup has been successfully developed. Measurements of N-type films give a positive voltage reading, whereas P-type films give a negative voltage reading. The measured voltage dominates at 1 per cent for N-type Ga and at 15 per cent for P-type Na. I-V characteristics of the fabricated diode showed a similar trend to the conventional diode. Research limitations/implications N-type has been often attempted. However, P-type has rarely been attempted because of the self-compensation effect in ZnO. There is a need to verify the conductivity type of ZnO films, especially P-type, as P-type films are not stable. The hot-point probe setup serves as a quick means to verify P-type ZnO films. Originality/value To the best of the authors’ understanding, this verification tool was developed and deployed to verify the N-type and P-type ZnO films. The P-type films are coated on top of the N-type films for diode I-V measurements.

scholarly journals Биоморфный нейропроцессор – прототип компьютера нового поколения, являющегося носителем искусственного интеллекта. Часть 2

2021 ◽  
Vol 14 (1) ◽  
pp. 68-79
Author(s):  
С.Ю. Удовиченко ◽  
А.Д. Писарев ◽  
А.Н. Бусыгин ◽  
А.Н. Бобылев
Keyword(s):  
Neural Network ◽  
Binary Code ◽  
Digital Information ◽  
Electrical Model ◽  
Input And Output ◽  
New Knowledge ◽  
New Association ◽  
Hardware Neural Network ◽  
First Time ◽  
Self Learning

Во входном и выходном устройствах биоморфного нейропроцессора происходят первичная и конечная обработка информации. Представлены результаты по сжатию на входе цифровой информации и ее кодированию в импульсы, а также по декодированию информации об активации нейронов на выходе в цифровой двоичный код. Представлена реализация аппаратной нейросети процессора на основе оригинальной биоморфной электрической модели нейрона. Приведены результаты SPICE-моделирования и экспериментального исследования процессов обработки сигналов в режимах маршрутизации выходных импульсов нейронов на синапсы других нейронов в логической матрице, скалярного умножения матрицы чисел на вектор, а также ассоциативного самообучения в запоминающей матрице. Впервые продемонстрирована генерация новой ассоциации (нового знания) как в компьютерном моделировании, так и в изготовленном мемристорно-диодном кроссбаре, в отличие от самообучения в существующих аппаратных нейросетях с синапсами на базе дискретных мемристоров. Primary and ultimate information processing takes place in the input and output devices of the biomorphic neuroprocessor. The results are presented on the compression of digital information at the input and its coding into pulses, as well as on the decoding of information about the activation of neurons at the output into a digital binary code. An implementation of a hardware neural network of a processor based on an original biomorphic electrical model of a neuron is presented. The results of SPICE modeling and experimental research of signal processing processes in the modes of routing neuron output pulses to synapses of other neurons in a logical matrix, scalar multiplication of a matrix of numbers by a vector, and associative selflearning in a memory matrix are presented. For the first time, the generation of a new association (new knowledge) was demonstrated both in computer simulation and in a fabricated memristor-diode crossbar, in contrast to self-learning in existing hardware neural networks with synapses based on discrete memristors.

scholarly journals APPLYING OF ACTIVITIES MANAGEMENT BASED ON SELF-LEARNING

2018 ◽  
Vol 1 ◽  
pp. 29-38 ◽  
Author(s):  
Valerii Samsonkin ◽  
Valerii Druz’ ◽  
Albert Feldman
Keyword(s):  
Quality Management ◽  
Technological Process ◽  
Human Activities ◽  
System Approach ◽  
Human Operator ◽  
Statistical Regularity ◽  
Effective Management ◽  
The Individual ◽  
First Time ◽  
Self Learning

The article is devoted to a brief presentation and application in practice of an effective management way of human activities and human-technical communities one. This way was called Method of statistical regularity (Method of self-organizing processes). In fact, this is a system approach. For the first time, the application of this approach is shown on the example of quality management of the technological process. Practical management is shown using an algorithm. The effectiveness of the author's system approach is explained by the consideration of the final result of the activity as a goal and a system-forming factor of activity, taking into account the individual features of the management object, real statistics of activity. The system approach described in the article is a universal devise of management. It can be used and already used to manage individual functions of the enterprise, the process, the human operator, the community

Direct Current Voltage Bias Effect on Laser-Induced Switching Bistability in VO$_{2}$-Based Device

2012 ◽  
Vol 5 (10) ◽  
pp. 102201 ◽  
Author(s):  
Giwan Seo ◽  
Bong-Jun Kim ◽  
Jeongyong Choi ◽  
Yong Wook Lee ◽  
Hyun-Tak Kim
Keyword(s):  
Direct Current ◽  
Bias Effect ◽  
Voltage Bias ◽  
Current Voltage ◽  
Direct Current Voltage

Effect of Hydrogen Treatment on Room -Temperature Electric-Field Induced Properties in Narrow-Gap ZnCdHgTe Thin Films

2004 ◽  
Vol 813 ◽  
Author(s):  
Galina M. Khlyap ◽  
Petro G. Sydorchuk ◽  
Jacek Polit
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Hydrogen Treatment ◽  
Narrow Gap ◽  
Glass Substrates ◽  
Semiconductor Thin Films ◽  
Visible Wavelength Range ◽  
Current Voltage ◽  
Before And After ◽  
First Time

ABSTRACTThe effect of hydrogen treatment on room temperature electric properties of narrow-gap semiconductor thin films ZnxCdyHg1−z−yTe (0 < x < 0.50, 0.20 < y < 0.40) is investigated for the first time. ZnCdHgTe films of 2 – 5 [.proportional]m thickness were grown on glass substrates by pulsed laser deposition technique. As-grown films were thermally treated in the flow of molecular H2 at 200°C during 24 hours. Comparison between electric characteristics measured before and after hydrogenation showed sufficient changes of the film resistance and appearance of photosensitivity in the visible wavelength range. Study of current-voltage characteristics of the films revealed appearance and significant change of diode-like properties.

Colloidal CuInS2 Based Nanocrystals /TiO2 Nanotube Arrays Composite Solar Cells Fabrication and Testing

2012 ◽  
Vol 1409 ◽  
Author(s):  
Vanga R. Reddy ◽  
William Wilson ◽  
Rick Eyi ◽  
Jiang Wu ◽  
M. O. Manasreh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Cost ◽  
Electrochemical Anodization ◽  
Nanotube Arrays ◽  
Properties And Characterization ◽  
Self Organized ◽  
Current Voltage ◽  
Junction Type ◽  
Photovoltaic Technologies ◽  
First Time

ABSTRACTTo develop alternative and low cost photovoltaic technologies we have synthesized CuInS2 nanocrystals with tunable optical properties and characterization was carried out thoroughly with TEM, SEM, EDAX and XRD. Furthermore large self-organized arrays of TiO2 nanotubes were fabricated on Ti foil followed by simple electrochemical anodization technique and characterized their structure by SEM and then for the first time coupled both the nanocrystals and nanotubes to form a p-n junction type photovoltaic device. The current-voltage (I-V) characteristics of photovoltaic cells were measured to test the proof of concept. Some preliminary experiments showed that device generates some current upon illumination. However, in our case we fabricated a device without sandwiching any buffer or barrier layers in between nanocrystals and nanotube arrays. We have been optimizing our solar cells efficiency by improving quality of nanotubes and nanocrystals. Some of the interesting finding are presented and discussed.

scholarly journals Study of the Electrophysical Properties of Composite Varistors Based on Zinc Oxide and Polymer (Polyaniline)

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
Sajedeh Mohammadi Aref ◽  
Hassan Bidadi ◽  
Shamestan Hasanli
Keyword(s):  
Activation Energy ◽  
Zinc Oxide ◽  
Temperature Dependence ◽  
Experimental Work ◽  
Threshold Voltage ◽  
Nonlinear Behavior ◽  
Polymer Content ◽  
Electrophysical Properties ◽  
Current Voltage ◽  
Current Voltage Characteristics

In this experimental work, current-voltage characteristics of composite varisrors prepared on the base of zinc oxide with different weight percentages of polyaniline and temperature dependence of the samples characteristics have been studied. The activation energy of donor levels as well as the existence of hysteresis loop has been investigated. The comparison of experimental results shows that by increasing the polymer percentage in the varistor structure as long as the nonlinear behavior is conserved, the threshold voltage increases. This comparison also indicates that increasing the polymer content in the varistor structure causes the temperature dependence of threshold voltage to decrease. It is also concluded that, by the increase of polymer content in the varistor structure, the activation energy of donor levels and the hysteresis value are increased.

scholarly journals HETERO TRANSITIONS BASED ON - TlGaSe2 - - CuInSe2

2021 ◽  
Author(s):  
A.Ch. Matiyev ◽  
R.T. Uspazhiev
Keyword(s):  
Relaxation Time ◽  
Current Voltage ◽  
Wide Range ◽  
The Law ◽  
First Time ◽  
Kinetics Of

The current-voltage and lux-ampere characteristics, as well as the photovoltage spectra and the lux dependence of the photovoltage in the gate and photodiode modes of the p-TlGaSe2 - p-CuInSe2 heterojunction obtained for the first time are studied. It was found that this heterostructure has a pronounced diode character. The I - V characteristic of the structure under study is characterized by the fact that at low voltages it obeys well the law I ~ exp (eU / βkT). The photovoltage spectrum covers a wide range of wavelengths (0.55 - 1.85 µm). In this case, pronounced maxima are observed at λ = 0.59 and λ = 0.95 μm. The relaxation time τ determined from the kinetics of the photo-voltage in the valve mode is ~ 20 μs.

Smart Heterostructures Based on Solid Solution ZnCdHgTe

2003 ◽  
Vol 785 ◽  
Author(s):  
Galina M. Khlyap ◽  
Petro G. Sydorchuk ◽  
Jacek Polit ◽  
Macej Oszwaldowsky
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Spectral Range ◽  
Room Temperature ◽  
Signal Frequency ◽  
Applied Bias ◽  
Current Voltage ◽  
Wide Range ◽  
Capacitance Voltage ◽  
First Time

ABSTRACTCurrent – voltage (IVC) and capacitance – voltage (CVC) of heterostructures (Cd, Zn)Te/ZnCdHgTe are studied for the first time. Thin films ZnxCdyHg1-x-yTe were grown on monocrystalline (111) CdTe and ZnTe substrates by PLE technology. Deposition was carried out on substrates held at temperatures near 290 K. The thickness of investigated films was estimated to be about 5 μm. Electric characteristics of the as-grown structures were examined under T = 77–290 K in the wide range of applied bias. All investigated samples have demonstrated diode-like IVC and CVC under test signal frequency f = 1 kHz. Heterostructures CdTe/ZnCdHgTe have exhibited a room temperature photosensitivity in spectral range 0.50–0.65 μm.

scholarly journals Investigation on Potential-Induced Degradation in a 50 MWp Crystalline Silicon Photovoltaic Power Plant

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Jingsheng Huang ◽  
Hongtao Li ◽  
Yaojie Sun ◽  
He Wang ◽  
Hong Yang
Keyword(s):  
Power Plant ◽  
Crystalline Silicon ◽  
Standard Test ◽  
Photovoltaic Power ◽  
Positive Voltage ◽  
Degradation Pattern ◽  
Performance Deterioration ◽  
One Year ◽  
P Type ◽  
First Time

The regular performance deterioration of P-type crystalline silicon solar modules and module strings caused by potential-induced degradation in a photovoltaic power plant was found in the field. The PID-affected solar modules dismounted from the photovoltaic power plant were further investigated systematically in the laboratory. For the first time, we found that the neutral point of voltage in a module string moved forward to the positive pole for a PID-affected module string as time goes on. Even if low positive voltage is applied to a PID-prone module, it could cause PID. The thermographic and electroluminescence (EL) images of a PID-affected module string also exhibit a regular degradation pattern. This is in good agreement with the measured power loss of the dismounted solar modules under standard test conditions. The results obtained in this paper show that the maximum power degradation rate of solar modules was as high as 53.26% after only one year of operation because of PID in the field. Due to the vast amount of solar modules and incomplete recovery, this is a terrible catastrophe for the owner of a power plant and module producer.

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