scholarly journals Low noise low power readout circuit for soft X ray detection

2003 ◽  
Vol 1 (03) ◽  
Author(s):  
A. Cerdeira-Estrada ◽  
A. De Luca ◽  
A. Cuttin ◽  
R. Mutihac
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Theoretical Calculations ◽  
Silicon Detector ◽  
Low Noise ◽  
Experimental Results ◽  
X Rays ◽  
Readout Circuit ◽  
X Ray ◽  
Low Power Cmos

A new low power CMOS ASIC for the detection of X-rays was optimized for low power and low noise. Theoretical calculations and optimizations are presented and compared with experimental results. Noise as low as 120+25*Cin [pF] ENC rms was obtained including a silicon detector of 1.3 pF and 0.3nA of leakage. The power consumption is less than 100 W. Other circuit parameters are also shown.

scholarly journals A low-power CMOS ASIC for X-ray Silicon Drift Detectors low-noise pulse processing

2014 ◽  
Vol 9 (03) ◽  
pp. C03036-C03036 ◽  
Author(s):  
M Ahangarianabhari ◽  
G Bertuccio ◽  
D Macera ◽  
P Malcovati ◽  
M Grassi ◽  
...  
Keyword(s):  
Low Power ◽  
Low Noise ◽  
Noise Pulse ◽  
X Ray ◽  
Pulse Processing ◽  
Low Power Cmos ◽  
Silicon Drift Detectors

SURFACE AND INTERFACE STRAINS REVEALED BY X-RAY DIFFRACTION

1999 ◽  
Vol 06 (06) ◽  
pp. 963-966 ◽  
Author(s):  
KOICHI AKIMOTO ◽  
TAKASHI EMOTO ◽  
YUYA ISHIKAWA ◽  
AYAHIKO ICHIMIYA
Keyword(s):  
Silicon Substrate ◽  
Strain Field ◽  
Theoretical Calculations ◽  
Incident Angle ◽  
Experimental Results ◽  
Lattice Expansion ◽  
X Rays ◽  
X Ray Diffraction ◽  
Strain Fields ◽  
X Ray

We measured strain fields near semiconductor surface by X-ray diffraction. The diffraction geometry was using the extremely asymmetric Bragg-case bulk reflection of a small incident angle to the surface and a large angle exiting from the surface. The incident angle of the X-rays was set near critical angle of total reflection by tuning X-ray energy of synchrotron radiation. The X-ray intensity of the silicon substrate 311 reflection was measured to study a Si(111) surface in the ultrahigh vacuum chamber. A clean Si (111)-(7 × 7) surface was found to give a sharper X-ray diffraction peak than that of the native oxide/Si(111) system. By comparison of experimental results and theoretical calculations, it was concluded that the thin silicon oxide film itself gives strong strain fields to the silicon substrates of lattice expansion toward the [311] direction. The strain fields at the Al- and Ag- induced [Formula: see text] surface reconstruction on the Si(111) substrate were also measured. By comparison of experimental results and theoretical calculations, Al-induced reconstruction was suggested to give a strain field to the silicon substrate of lattice expansion toward the [311] direction, whereas Ag-induced reconstruction was suggested to give a strain field to the silicon substrate of lattice compression toward the [311] direction.

K shell X-ray intensity ratios, K-Li, K-L, and K-M vacancy transfer probabilities of Ba and Tl following internal conversion process

2014 ◽  
Vol 92 (11) ◽  
pp. 1489-1493 ◽  
Author(s):  
P.V. Sreevidya ◽  
S.B. Gudennavar ◽  
Daisy Joseph ◽  
S.G. Bubbly
Keyword(s):  
Beta Decay ◽  
Internal Conversion ◽  
Experimental Results ◽  
Conversion Process ◽  
X Rays ◽  
X Ray ◽  
Multichannel Analyser ◽  
Intensity Ratios

K shell X-rays of barium and thallium following internal conversion decay in Cs137 and Hg203, respectively, were detected using a Si(Li) X-ray detector coupled to PC-based 8k multichannel analyser employing the method suggested earlier by our group. The K shell X-ray intensity ratios and vacancy transfer probabilities for thallium and barium were calculated. The obtained results are compared with theoretical, semiempirical, and others’ experimental results obtained via photoionization as well as decay processes. The effects of beta decay and internal conversion on X-ray emission probabilities are discussed.

scholarly journals A 60 GHz fully differential LNA in 90 nm CMOS technology

2013 ◽  
Vol 6 (2) ◽  
pp. 109-113 ◽  
Author(s):  
Andrea Malignaggi ◽  
Amin Hamidian ◽  
Georg Boeck
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Transmission Lines ◽  
Noise Figure ◽  
Design Procedure ◽  
Cmos Technology ◽  
High Gain ◽  
Low Noise ◽  
60 Ghz ◽  
Fully Differential

The present paper presents a fully differential 60 GHz four stages low-noise amplifier for wireless applications. The amplifier has been optimized for low-noise, high-gain, and low-power consumption, and implemented in a 90 nm low-power CMOS technology. Matching and common-mode rejection networks have been realized using shielded coplanar transmission lines. The amplifier achieves a peak small-signal gain of 21.3 dB and an average noise figure of 5.4 dB along with power consumption of 30 mW and occupying only 0.38 mm2pads included. The detailed design procedure and the achieved measurement results are presented in this work.

scholarly journals Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 973
Author(s):  
Marco Crescentini ◽  
Cinzia Tamburini ◽  
Luca Belsito ◽  
Aldo Romani ◽  
Alberto Roncaglia ◽  
...  
Keyword(s):  
Low Power ◽  
Power Supply ◽  
First Generation ◽  
Negative Resistance ◽  
Low Noise ◽  
Strain Sensors ◽  
Current Conveyors ◽  
Ultra Low Power ◽  
Active Elements ◽  
Low Power Cmos

This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator.

scholarly journals A HIGH-PERFORMANCE AND LOW-POWER DELAY BUFFER

2013 ◽  
pp. 78-82
Author(s):  
GOPALA KRISHNA.M ◽  
UMA SANKAR.CH ◽  
NEELIMA. S ◽  
KOTESWARA RAO.P
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Vlsi Design ◽  
Flip Flop ◽  
Ring Counter ◽  
Double Edge ◽  
Low Power Cmos ◽  
Cmos Vlsi

In this paper, presents circuit design of a low-power delay buffer. The proposed delay buffer uses several new techniques to reduce its power consumption. Since delay buffers are accessed sequentially, it adopts a ring-counter addressing scheme. In the ring counter, double-edge-triggered (DET) flip-flops are utilized to reduce the operating frequency by half and the C-element gated-clock strategy is proposed. Both total transistor count and the number of clocked transistors are significantly reduced to improve power consumption and speed in the flip-flop. The number of transistors is reduced by 56%-60% and the Area-Speed-Power product is reduced by 56%-63% compared to other double edge triggered flip-flops. This design is suitable for high-speed, low-power CMOS VLSI design applications.

scholarly journals Micrometer-resolution imaging using MÖNCH: towards G2-less grating interferometry

2016 ◽  
Vol 23 (6) ◽  
pp. 1462-1473 ◽  
Author(s):  
Sebastian Cartier ◽  
Matias Kagias ◽  
Anna Bergamaschi ◽  
Zhentian Wang ◽  
Roberto Dinapoli ◽  
...  
Keyword(s):  
High Resolution ◽  
Silicon Detector ◽  
Limiting Factor ◽  
X Rays ◽  
X Ray ◽  
Charge Cloud ◽  
High Resolution Images ◽  
Resolution Imaging ◽  
Hybrid Silicon ◽  
Small Pixel

MÖNCH is a 25 µm-pitch charge-integrating detector aimed at exploring the limits of current hybrid silicon detector technology. The small pixel size makes it ideal for high-resolution imaging. With an electronic noise of about 110 eV r.m.s., it opens new perspectives for many synchrotron applications where currently the detector is the limiting factor,e.g.inelastic X-ray scattering, Laue diffraction and soft X-ray or high-resolution color imaging. Due to the small pixel pitch, the charge cloud generated by absorbed X-rays is shared between neighboring pixels for most of the photons. Therefore, at low photon fluxes, interpolation algorithms can be applied to determine the absorption position of each photon with a resolution of the order of 1 µm. In this work, the characterization results of one of the MÖNCH prototypes are presented under low-flux conditions. A custom interpolation algorithm is described and applied to the data to obtain high-resolution images. Images obtained in grating interferometry experiments without the use of the absorption grating G2are shown and discussed. Perspectives for the future developments of the MÖNCH detector are also presented.

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