scholarly journals Low-voltage 0.35-/mi cmos wideband operational transconductance amplifier

2002 ◽  
Vol 15 (3) ◽  
pp. 361-369
Author(s):  
Lyes Bouzerara ◽  
Mohand Belaroussi
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Output Impedance ◽  
Power Supply Voltage ◽  
Gain Bandwidth ◽  
Current Mirrors ◽  
Transconductance Amplifier ◽  
Cascade Structure ◽  
Feedback Frequency ◽  
High Output Impedance

A low voltage CMOS wideband operational Tran conductance amplifier (OTA) using regulated cascade structure with an active positive feedback frequency-dependent current mirrors and feed forward techniques, is presented and analyzed. Such techniques stand as a powerful method of gain bandwidth, output impedance and phase margin enhancements. In this paper, an efficient implementation of a high output impedance current mirror is used in the design of an OTA by means of the regulated cascade circuits. This amplifier operates at ?1.25 V power supply voltage, exhibits a voltage gain of 68 dB, and provides a gain bandwidth product of 166 MHz. It drives a capacitive load of 1.6 pF and gives a power dissipation of 8.5 mW. The predicted performance is verified by simulations using HSPICE tool with 0.35 /itm CMOS TSMC parameters.

scholarly journals Low-voltage, low-power and high gain cmosota using active positive feedback with feed forward and FDCM techniques

2002 ◽  
Vol 15 (1) ◽  
pp. 93-101
Author(s):  
Lyes Bouzerara ◽  
Tahar Belaroussi ◽  
Boualem Amirouche
Keyword(s):  
Positive Feedback ◽  
Low Voltage ◽  
Supply Voltage ◽  
Phase Margin ◽  
Current Mirror ◽  
Power Supply Voltage ◽  
Gain Bandwidth ◽  
Frequency Dependent ◽  
Feed Forward ◽  
Current Mirrors

A low voltage, high dc gain and wideband load compensated cas code operational transconductance amplifier (OTA), using an active positive feedback with feed forward technique and frequency-dependent current mirrors (FDCM), is presented and analyzed. Such techniques stand as a powerful method of gain bandwidth and phase margin enhancements. In this paper, a frequency-dependent current mirror, whose input impedance increases with frequency, is used to form the feed forward path at the input of the current mirror with a feed forward capacitor. By using these techniques, the gain bandwidth product of the amplifier is improved from 115 MHz to 194 MHz, the phase margin is also improved from 85? to 95? and the gain is enhanced from 11 dB to 93 dB. This amplifier operates at 2.5 V power supply voltage drives a capacitive load of 1pF and gives a power dissipation of 7 mW. The predicted performance is verified by simulations using HSPICE tool with 0.8 fim CMOS AMS parameters.

scholarly journals Challenges of <i>V</i><i><sub>DD</sub></i> scaling for analog circuits: an amplifier

2005 ◽  
Vol 3 ◽  
pp. 377-381
Author(s):  
A. Bargagli-Stoffi ◽  
J. Sauerbrey ◽  
J. Wang ◽  
D. Schmitt-Landsiedel
Keyword(s):  
Power Supply ◽  
Analog Circuits ◽  
Low Voltage ◽  
Supply Voltage ◽  
Analog Design ◽  
Power Supply Voltage ◽  
Current Mirrors ◽  
Satisfactory Performance ◽  
Transconductance Amplifier ◽  
The Many

Abstract. With the shrinking of the device dimensions, the power supply voltage value is continuously decreasing. Since the threshold voltage value does not decrease as much as the power supply and the drain source saturation voltage becomes an important fraction of the power supply, many amplifier architectures are no more suitable for modern processes. A transconductance amplifier based on current mirrors is analyzed highlighting the main challenges of a low-voltage analog design. Among the many proposed amplifier architectures, a topology based on current mirrors has been chosen as the most promising to operate with low voltages. Simulations with 90nm CMOS prove the feasibility of circuit operation with satisfactory performance at an operating power supply voltage as low as 0.6V.

scholarly journals Design techniques for low-voltage analog integrated circuits

2017 ◽  
Vol 68 (4) ◽  
pp. 245-255 ◽  
Author(s):  
Matej Rakús ◽  
Viera Stopjaková ◽  
Daniel Arbet
Keyword(s):  
Integrated Circuits ◽  
Low Voltage ◽  
Supply Voltage ◽  
Building Blocks ◽  
Cmos Process ◽  
Mos Transistors ◽  
Power Supply Voltage ◽  
Current Mirrors ◽  
Moderate Inversion ◽  
Design Techniques

AbstractIn this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or current mirrors designed using these approaches are able to operate with the power supply voltage of 600 mV (or even lower), which is the key feature towards integrated systems for modern portable applications.

A Low-Voltage Low-Power Resistor-Based Current Mirror and Its Applications

2017 ◽  
Vol 26 (11) ◽  
pp. 1750180 ◽  
Author(s):  
Leila Safari ◽  
Shahram Minaei
Keyword(s):  
Output Voltage ◽  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Input Voltage ◽  
Cmos Technology ◽  
Current Mirror ◽  
Output Impedance ◽  
High Cmrr ◽  
High Output Impedance

In this paper, a CMOS resistor-based current mirror (RBCM) aimed to be used in low-voltage applications is presented. The main features of the proposed current mirror are very low input voltage requirement (a few mV), low output voltage requirement, high output impedance and simple circuitry. The core structure of the proposed RBCM consists of three transistors (excluding bias circuitry) and two low value grounded resistors. The proposed circuit alleviates the need for cascode structures which are conventionally used to boost the output impedance and linearity. SPICE simulations using 0.18[Formula: see text][Formula: see text]m CMOS technology parameters under supply voltage of 0.9[Formula: see text]V are reported which show input and output voltage requirements of 40[Formula: see text]mV and 0.1[Formula: see text]V respectively, low THD of 1.2%, [Formula: see text] of 496[Formula: see text][Formula: see text], [Formula: see text] of 1[Formula: see text]M[Formula: see text], [Formula: see text]3[Formula: see text]dB bandwidth of 181[Formula: see text]MHz and power dissipation of 154[Formula: see text][Formula: see text]W. A high CMRR differential amplifier and a high performance current difference circuit as applications of the proposed RBCM are given. The proposed RBCM is very useful in tackling restrictions of modern technologies such as reduced supply voltage and transistors low intrinsic output impedance.

scholarly journals Self-Biased and Supply-Voltage Scalable Inverter-Based Operational Transconductance Amplifier with Improved Composite Transistors

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 935
Author(s):  
Luis Henrique Rodovalho ◽  
Cesar Ramos Rodrigues ◽  
Orazio Aiello
Keyword(s):  
Power Consumption ◽  
Power Efficiency ◽  
Low Voltage ◽  
Supply Voltage ◽  
Voltage Gain ◽  
Gain Bandwidth ◽  
Operational Transconductance Amplifiers ◽  
Transconductance Amplifier ◽  
Technology Process ◽  
The Impact

This paper deals with a single-stage single-ended inverter-based Operational Transconductance Amplifiers (OTA) with improved composite transistors for ultra-low-voltage supplies, while maintaining a small-area, high power-efficiency and low output signal distortion. The improved composite transistor is a combination of the conventional composite transistor and forward-body-biasing to further increase voltage gain. The impact of the proposed technique on performance is demonstrated through post-layout simulations referring to the TSMC 180 nm technology process. The proposed OTA achieves 54 dB differential voltage gain, 210 Hz gain–bandwidth product for a 10 pF capacitive load, with a power consumption of 273 pW with a 0.3 V power supply, and occupies an area of 1026 μm2. For a 0.6 V voltage supply, the proposed OTA improves its voltage gain to 73 dB, and achieves a 15 kHz gain–bandwidth product with a power consumption of 41 nW.

scholarly journals Multifunction Current Differencing Cascaded Transconductance Amplifier (MCDCTA) and Its Application to Current-Mode Multiphase Sinusoidal Oscillator

2015 ◽  
Vol 66 (5) ◽  
pp. 241-249 ◽  
Author(s):  
Chunhua Wang ◽  
Hairong Lin
Keyword(s):  
Active Element ◽  
Low Voltage ◽  
Current Mode ◽  
Output Impedance ◽  
Oscillation Condition ◽  
Transconductance Amplifier ◽  
Sinusoidal Oscillator ◽  
High Output Impedance ◽  
Processing Circuit ◽  
High Output

AbstractIn this study, a new versatile active element, namely multifunction current differencing cascaded transconductance amplifier (MCDCTA), is proposed. This device which adopts a simple configuration enjoys the performances of low-voltage, low-input and high-output impedance, wide bandwidth etc. It simplifies the design of the current-mode analog signal processing circuit greatly, especially the design of high-order filter and oscillator circuits. Moreover, an example as a new current-mode multiphase sinusoidal oscillator (MSO) using MCDCTA is described in this paper. The proposed oscillator, which employs only one MCDCTA and minimum grounded passive elements, is easy to be realized. It can provide random n (n being odd or even) output current signals and these output currents are equally spaced in phase all at high output impedance terminals. Its oscillation condition and the oscillation frequency can be adjusted independently, linearly and electronically by controlling the bias currents of MCDCTA. The operation of the proposed oscillator has been testified through PSPICE simulation and experimental results.

COMPOSITE TRANSISTOR CELL USING DYNAMIC BODY BIAS FOR HIGH GAIN AND LOW-VOLTAGE APPLICATIONS

2014 ◽  
Vol 23 (08) ◽  
pp. 1450108 ◽  
Author(s):  
VANDANA NIRANJAN ◽  
ASHWANI KUMAR ◽  
SHAIL BALA JAIN
Keyword(s):  
Low Power ◽  
Large Scale ◽  
Low Voltage ◽  
Supply Voltage ◽  
High Gain ◽  
Signal Frequency ◽  
Output Impedance ◽  
Self Cascode ◽  
Intrinsic Gain ◽  
Body Bias

In this work, a new composite transistor cell using dynamic body bias technique is proposed. This cell is based on self cascode topology. The key attractive feature of the proposed cell is that body effect is utilized to realize asymmetric threshold voltage self cascode structure. The proposed cell has nearly four times higher output impedance than its conventional version. Dynamic body bias technique increases the intrinsic gain of the proposed cell by 11.17 dB. Analytical formulation for output impedance and intrinsic gain parameters of the proposed cell has been derived using small signal analysis. The proposed cell can operate at low power supply voltage of 1 V and consumes merely 43.1 nW. PSpice simulation results using 180 nm CMOS technology from Taiwan Semiconductor Manufacturing Company (TSMC) are included to prove the unique results. The proposed cell could constitute an efficient analog Very Large Scale Integration (VLSI) cell library in the design of high gain analog integrated circuits and is particularly interesting for biomedical and instrumentation applications requiring low-voltage low-power operation capability where the processing signal frequency is very low.

scholarly journals Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product

2017 ◽  
Vol 15 ◽  
pp. 115-121
Author(s):  
Sehoon Park ◽  
Xuan-Quang Du ◽  
Markus Grözing ◽  
Manfred Berroth
Keyword(s):  
Group Delay ◽  
Supply Voltage ◽  
Input Voltage ◽  
Power Supply Voltage ◽  
Gain Bandwidth ◽  
Chip Area ◽  
Limiting Amplifier ◽  
Inductive Peaking ◽  
Bicmos Technology ◽  
Sige Bicmos

Abstract. This paper presents the design of a limiting amplifier with 1-to-3 fan-out implementation in a 0.13 µm SiGe BiCMOS technology and gives a detailed guideline to determine the circuit parameters of the amplifier for optimum high-frequency performance based on simplified gain estimations. The proposed design uses a Cherry-Hooper topology for bandwidth enhancement and is optimized for maximum group delay flatness to minimize phase distortion of the input signal. With regard to a high integration density and a small chip area, the design employs no passive inductors which might be used to boost the circuit bandwidth with inductive peaking. On a RLC-extracted post-layout simulation level, the limiting amplifier exhibits a gain-bandwidth-product of 14.6 THz with 56.6 dB voltage gain and 21.5 GHz 3 dB bandwidth at a peak-to-peak input voltage of 1.5 mV. The group delay variation within the 3 dB bandwidth is less than 0.5 ps and the power dissipation at a power supply voltage of 3 V including output drivers is 837 mW.

A High-Speed Fully Differential Telescopic Op-Amp for Active Filter Designs in V2X Applications

2021 ◽  
Author(s):  
Furkan Barin ◽  
Ertan Zencir
Keyword(s):  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Active Filter ◽  
Ultra Wideband ◽  
Two Stage ◽  
Fully Differential ◽  
Op Amp ◽  
Current Mirrors ◽  
Design Techniques

In this paper, an ultra-wideband fully differential two-stage telescopic 65-nm CMOS op-amp is presented, which uses low-voltage design techniques such as level shifter circuits and low-voltage cascode current mirrors. The designed op-amp consists of two stages. While the telescopic first stage provides high speed and low swing, the second stage provides high gain and large swing. Common-mode feedback circuits (CMFB), which contain five transistors OTA and sensing resistors, are used to set the first-stage output to a known value. The designed two-stage telescopic operational amplifier has 41.04[Formula: see text]dB lower frequency gain, 1.81[Formula: see text]GHz gain-bandwidth product (GBW) and 51.9∘ phase margin under 5[Formula: see text]pF load capacitance. The design consumes a total current of 11.9[Formula: see text]mA from a 1.2-V supply voltage. Presented fully differential two-stage telescopic op-amp by using low-voltage design techniques is suitable for active filter in vehicle-to-everything (V2X) applications with 120[Formula: see text][Formula: see text]m[Formula: see text]m layout area.

scholarly journals Current mode approach: High performance 0.35 μm CMOS class AB push-pull current amplifier

2003 ◽  
Vol 16 (2) ◽  
pp. 195-204
Author(s):  
Lyes Bouzerara ◽  
Mohand Belaroussi
Keyword(s):  
High Performance ◽  
Supply Voltage ◽  
Current Mode ◽  
Current Gain ◽  
Design Parameters ◽  
Power Supply Voltage ◽  
Current Amplifier ◽  
Class Ab ◽  
Current Mirrors ◽  
General Circuits

A very high bandwidth class AB (Push-Pull) current amplifier using the compensation resistor technique is presented and analyzed. Such technique stands as a powerful method of bandwidth enhancement for general circuits using CMOS current mirrors. The proposed bandwidth is enhanced from 675 MHz for the uncompensated current amplifier to 745MHz for the compensated one without affecting the current gain and other design parameters such as power consumption and output swing. The circuit exhibits a current gain of 20 dB and consumes 1.48 mW for ?2.5V power supply voltage. All simulation results were performed using Hspice tool with 0.35^m CMOS TSMC parameters.

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