scholarly journals InPAs Alloys Use for Electrical Engineering in Hard-radiation Environment

2021 ◽  
Vol 6 (1) ◽  
pp. 31-35
Author(s):  
Elza Khutsishvili ◽  
Nodar Kekelidze ◽  
Tengiz Qamushadze ◽  
Zurab Chubinashvili ◽  
Nana Kobulashvili ◽  
...  
Keyword(s):  
Electrical Engineering ◽  
Engineering Application ◽  
High Energy ◽  
Radiation Environment ◽  
Semiconductor Materials ◽  
Fast Neutrons ◽  
High Fluences ◽  
Hard Radiation ◽  
Radiation Resistant ◽  
New Generation

Effective functioning of electronics in high- radiation environment requires developing of novel semiconductor systems with radiation-tolerant properties. In given work, in search of semiconductor materials with immunity to radiation, investigations have been focused on InPxAs1-x alloys. Investigating of electrical and optical characteristics and physical processes, flowing in heavily irradiated InPxAs1-x alloys under high fluences of high-energy electrons and fast neutrons, let us create new generation of radiation-resistant semiconductor materials for electrical engineering application in hard-radiation environment.

RADIATION ISSUES IN THE NEW GENERATION OF HIGH ENERGY PHYSICS EXPERIMENTS

2004 ◽  
Vol 14 (02) ◽  
pp. 379-399 ◽  
Author(s):  
F. FACCIO
Keyword(s):  
High Energy Physics ◽  
Hadron Collider ◽  
Nuclear Research ◽  
Cmos Technology ◽  
High Energy ◽  
Radiation Environment ◽  
New Generation ◽  
Physics Experiments ◽  
Center For Nuclear Research ◽  
Energy Physics

With the construction of the Large Hadron Collider at the European Center for Nuclear Research (CERN), the radiation levels at large High Energy Physics (HEP) experiments are significantly increased with respect to past experience. The approach the HEP community is using to ensure radiation tolerance of the electronics installed in these new generation experiments is described. Particular attention is devoted to developments that led to original work: the estimate of the SEU rate in the complex LHC radiation environment and the use of hardness by design techniques to achieve radiation hardness of ASICs in a commercial CMOS technology.

scholarly journals Unravelling the secrets of the resistance of GaN to strongly ionising radiation

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Ionising Radiation ◽  
Atomistic Simulations ◽  
Extended Defects ◽  
Swift Heavy Ions ◽  
High Fluences ◽  
Radiation Resistant ◽  
Simulation And Experiment ◽  
Underlying Mechanisms ◽  
Radiation Hard

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.

Irradiation Induced Changes in Semiconducting Thin Films

2013 ◽  
Vol 341 ◽  
pp. 181-210 ◽  
Author(s):  
S.K. Tripathi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Heavy Ions ◽  
Semiconductor Device ◽  
High Energy ◽  
Device Fabrication ◽  
Electrical Performance ◽  
Radiation Environment ◽  
Extended Defects ◽  
Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

Radiation damage of BGO crystals due to low energy γ rays, high energy protons and fast neutrons

1983 ◽  
Vol 206 (1-2) ◽  
pp. 107-117 ◽  
Author(s):  
Masaaki Kobayashi ◽  
Kenjiro Kondo ◽  
Hiromi Hirabayashi ◽  
Shin-ichi Kurokawa ◽  
Mitsuhiko Taino ◽  
...  
Keyword(s):  
Radiation Damage ◽  
High Energy ◽  
Low Energy ◽  
Fast Neutrons ◽  
Γ Rays

Deep Levels Induced by High Fluence Proton Irradiation in Undoped GaAs Diodes

1997 ◽  
Vol 487 ◽  
Author(s):  
A Castaldini ◽  
A Cavallini ◽  
L Polenta ◽  
C Canali ◽  
F Nava ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
High Energy ◽  
Deep Levels ◽  
Induced Current ◽  
High Fluence ◽  
High Fluences ◽  
Electron Beam Induced Current ◽  
Insulating Liquid ◽  
Undoped Gaas ◽  
Scanning Electron

AbstractSemi-insulating liquid encapsulated Czochralski grown GaAs has been investigated after irradiation at high fluences of high-energy protons. Electron beam induced current observations of scanning electron microscopy evidenced a radiation stimulated ordering. An analysis has been carried out of the deep levels associated with defects as a function of the irradiation fluence, using complementary current transient spectroscopies. By increasing the irradiation fluence, the concentration of the native traps at 0.37 eV together with that of the EL2 defect significantly increases and, at the same time, two new electron traps at 0.15 eV and 0.18 eV arise and quickly increase in density.

scholarly journals Molecular Dynamics Analysis of SiC Single Crystal Materials

2018 ◽  
Vol 227 ◽  
pp. 01002
Author(s):  
Wei Li
Keyword(s):  
Molecular Dynamics ◽  
Single Crystal ◽  
State Density ◽  
Semiconductor Materials ◽  
Dynamics Analysis ◽  
Microscopic Mechanism ◽  
Element Doping ◽  
New Generation ◽  
Materials Studio ◽  
Semiconductor Conductivity

SiC is modeled as a new generation of semiconductor materials because of its excellent properties. The 6H-SiC is modeled by Materials Studio. The band and state density of 6H-SiC are analyzed. In addition, 6H-SiC Substrate, the AL element doping, from the microscopic mechanism, analyzed the 6H-SiC semiconductor conductivity.

scholarly journals The effects of the big storm events in the first half of 2015 on the radiation belts observed by EPT/PROBA-V

2016 ◽  
Vol 34 (1) ◽  
pp. 75-84 ◽  
Author(s):  
V. Pierrard ◽  
G. Lopez Rosson
Keyword(s):  
Charged Particle ◽  
High Resolution ◽  
Geomagnetic Storm ◽  
Energetic Particle ◽  
High Energy ◽  
Radiation Belts ◽  
Radiation Environment ◽  
Storm Event ◽  
Storm Events ◽  
Particle Radiation

Abstract. With the energetic particle telescope (EPT) performing with direct electron and proton discrimination on board the ESA satellite PROBA-V, we analyze the high-resolution measurements of the charged particle radiation environment at an altitude of 820 km for the year 2015. On 17 March 2015, a big geomagnetic storm event injected unusual fluxes up to low radial distances in the radiation belts. EPT electron measurements show a deep dropout at L > 4 starting during the main phase of the storm, associated to the penetration of high energy fluxes at L < 2 completely filling the slot region. After 10 days, the formation of a new slot around L = 2.8 for electrons of 500–600 keV separates the outer belt from the belt extending at other longitudes than the South Atlantic Anomaly. Two other major events appeared in January and June 2015, again with injections of electrons in the inner belt, contrary to what was observed in 2013 and 2014. These observations open many perspectives to better understand the source and loss mechanisms, and particularly concerning the formation of three belts.

Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials：properties, fabrication and applications

2021 ◽  
Author(s):  
Zhongxin Wang ◽  
Guodong Wang ◽  
Xintong Liu ◽  
Shouzhi Wang ◽  
Tailin Wang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Band Gap ◽  
Hot Spot ◽  
Wide Band ◽  
Aluminium Nitride ◽  
Semiconductor Materials ◽  
Two Dimensional ◽  
Wide Band Gap ◽  
Nitride Semiconductor ◽  
New Generation

Gallium nitride (GaN) and aluminium nitride (AlN), as the representatives of new generation of wide band gap semiconductor materials, have become a hot spot in the semiconductor field due to...

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