SEM in-situ Study of Electromigaration Induced Degradation Processes in Embedded Copper Interconnects

2002 ◽  
Author(s):  
Eckhard Langer ◽  
Moritz Andreas Meyer ◽  
Ehrenfried Zschech ◽  
Marko Herrmann
Keyword(s):  
Ion Beam ◽  
Void Formation ◽  
Preparation Technique ◽  
In Situ Experiment ◽  
Constant Growth Rate ◽  
Cross Sectional ◽  
Agglomeration Process ◽  
Custom Made ◽  
In Situ Investigation

Abstract In this paper an experimental set-up is presented that allows the Scanning Electron Microscope (SEM) in-situ investigation of electromigration phenomena in fully embedded copper interconnect structures, both from a top-down and from a cross-sectional perspective. The condition that the interconnects under test are fully embedded during the in-situ experiment is achieved using a Focussed Ion Beam (FIB) preparation technique. A SEM is equipped with a custom-made heating stage. During the experiment the void formation, growth and agglomeration process can be observed. Post-mortem cross-section analysis after the interconnect failure reveals e.g. a relationship between the microstructure of the copper contact and the non-constant growth rate of the voids.

Hydrogen-plasma etching of ion beam deposited c-BN films: An in situ investigation of the surface with electron spectroscopy

2000 ◽  
Vol 88 (10) ◽  
pp. 5597-5604 ◽  
Author(s):  
P. Reinke ◽  
P. Oelhafen ◽  
H. Feldermann ◽  
C. Ronning ◽  
H. Hofsäss
Keyword(s):  
Plasma Etching ◽  
Electron Spectroscopy ◽  
Ion Beam ◽  
Hydrogen Plasma ◽  
In Situ Investigation

Thermal stability of Pt nanowires manufactured by Ga+ focused ion beam (FIB)

2003 ◽  
Vol 777 ◽  
Author(s):  
B.J. Inkson ◽  
G. Dehm
Keyword(s):  
Thermal Stability ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wire Surface ◽  
Cross Sectional ◽  
Partial Crystallization ◽  
Fcc Structure ◽  
Thermal Stability Of ◽  
Pt Nanowires

AbstractPt nanowires have been produced by FIB deposition of Pt thin films in a commercial Ga+ focused ion beam (FIB) system, followed by cross-sectional sputtering to form electron transparent Pt nanowires. The thermal stability of amorphous FIB manufactured Pt wires has been investigated by in-situ thermal cycling in a TEM. The Pt wires are stable up to 580-650°C where partial crystallization is observed in vacuum. Facetted nanoparticles grow on the wire surface, growing into free space by surface diffusion and minimising contact area with the underlying wire. The particles are fcc Pt with some dissolved Ga. Continued heating results in particle spheroidization, coalescence and growth, retaining the fcc structure.

Orientational and Microstructural Evolution During Epitaxial Growth of Cu on Si(001) by Sputter Deposition

1992 ◽  
Vol 280 ◽  
Author(s):  
I. Hashim ◽  
B. Park ◽  
H. A. Atwater
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
High Energy ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTEpitaxial Cu thin films have been grown on H-terminated Si(OOl) substrates at room temperature by D.C. ion-beam sputter deposition in ultrahigh vacuum. The development of orientation and microstructure during epitaxial growth from the initial stages of Cu growth up to Cu thicknesses of few hundred nm has been investigated. Analysis by in-situ reflection high energy electron diffraction, thin film x-ray diffraction, and plan-view and cross-sectional transmission electron microscopy indicates that the films are well textured with Cu(001)∥ Si(001) and Cu[100]∥ Si[110]. Interestingly, it is found that a distribution of orientations occurs at the early stages of Cu epitaxy on Si(001) surface, and that a (001) texture emerges gradually with increasing Cu thickness. The effect of silicide formation and deposition conditions on the crystalline quality of Cu epitaxy is also discussed.

A Preparation Method of Diamond Specimens Using an Advanced FIB Microscopy for Micro and Nanoanalysis

2012 ◽  
Vol 531-532 ◽  
pp. 592-595
Author(s):  
Yi Qing Chen ◽  
Feng Zai Tang ◽  
Liang Chi Zhang
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Polycrystalline Diamond ◽  
Specimen Preparation ◽  
Atomic Lattice ◽  
Cross Sectional ◽  
Site Specific ◽  
Dual Beam

This paper reports the specimen preparation using an advanced dual beam focused ion beam (FIB) technique for bulk polycrystalline diamond (PCD) composites after dynamic friction polishing (DFP). The technique adapted allows for precisely processing diamond materials at the specific polishing track sites of PCD surface, from which large cross-sectional specimens for SEM/EDS/Raman microanalysis could be successfully created. In addition, an in-situ lift-out method was developed to prepare the site-specific HRTEM specimens which were thin enough for imaging the atomic lattice of diamond and for conducting EELS analysis.

scholarly journals In-Situ Control of Defect Dynamics By Ellipsometry During Ion Implantation – Evolution of Disorder and Cavity Structure in Single-Crystalline Ge During Implantation of Sb Ions

2020 ◽  
Author(s):  
Tivadar Lohner ◽  
Attila Németh ◽  
Zsolt Zolnai ◽  
Benjamin Kalas ◽  
Alekszej Romanenko ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Structural Damage ◽  
Damage Accumulation ◽  
Volume Fraction ◽  
Layer Structure ◽  
Ion Beam ◽  
Void Formation ◽  
High Volume ◽  
Cavity Structure

Abstract Ion implantation has been a key technology in microelectronics and generally, for the controlled surface modification of materials for tribology, biocompatibility, corrosion resistance and many more. In this work in-situ spectroscopic ellipsometry was used for accurately tracking and on-line evaluating the accumulation of voids and damage in crystalline Ge during implantation of 200-keV Sb+ ions at a total fluence of 1016 cm− 2 using an ion flux of 2.1 × 1012 cm− 2s− 1. The phases of damage accumulation were identified using unique optical multi-layer models describing the layer structure and composition. The formation of initial partial disorder was followed by complete amorphization and void formation occurring at the fluence of 1 × 1015 cm− 2, reaching a high volume fraction of voids and a layer thickness of ≈ 200 nm by the end of the process. This agrees with numerical simulations and results of complementary measurements including ion beam analysis and electron microscopy. The developed in-situ method for controlling the dynamics of structural damage accumulation is a versatile ion-implantation tool for avoiding adverse void formation and for controlled evolution of subsurface nanocavities or cellular surface texture alike.

scholarly journals Applicability of Cross-Sectional Borehole Deformation Method (CBDM) to Measure Rock Stress Changes through Laboratory and In-Situ Experiment

2012 ◽  
Vol 128 (3) ◽  
pp. 134-139
Author(s):  
Yuzo OBARA ◽  
Toru YOSHINAGA ◽  
Takuya SHIN ◽  
Minami KATAOKA ◽  
Tatsuya YOKOYAMA
Keyword(s):  
Rock Stress ◽  
In Situ Experiment ◽  
Deformation Method ◽  
Cross Sectional ◽  
Stress Changes

In Situ Investigation of the Palladium Silicon Reaction

1984 ◽  
Vol 37 ◽  
Author(s):  
D. A. Smith ◽  
P. A. Psaras ◽  
I. J. Fishert ◽  
K. N. Tu
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Volume Changes ◽  
Cross Sectional ◽  
Compound Formation ◽  
Transmission Electron ◽  
In Situ Investigation ◽  
Hillock Formation ◽  
Elastic Strains

AbstractPalladium has been deposited on {1001 and t1111 oriented silicon wafers and also on polysilicon. Cross-sectional specimens for transmission electron microscopy were prepared and heated in-situ. The interfaces between silicide and silicon were rough and the volume changes accompanying heating and compound formation caused elastic strains in the substrates and in one case hillock formation in the products.

scholarly journals Nanomechanical testing of freestanding polymer films: in situ tensile testing and Tg measurement

2021 ◽  
Author(s):  
Nathan R. Velez ◽  
Frances I. Allen ◽  
Mary Ann Jones ◽  
Jenn Donohue ◽  
Wei Li ◽  
...  
Keyword(s):  
Polymer Films ◽  
Tensile Testing ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Small Scale ◽  
Specimen Preparation ◽  
In Situ Tem ◽  
Preparation Technique ◽  
Characterization Methods

Abstract A method for small-scale testing and imaging of freestanding, microtomed polymer films using a push-to-pull device is presented. Central to this method was the development of a sample preparation technique which utilized solvents at cryogenic temperatures to transfer and deposit delicate thin films onto the microfabricated push-to-pull devices. The preparation of focused ion beam (FIB)-milled tensile specimens enabled quantitative in situ TEM tensile testing, but artifacts associated with ion and electron beam irradiation motivated the development of a FIB-free specimen preparation method. The FIB-free method was enabled by the design and fabrication of oversized strain-locking push-to-pull devices. An adaptation for push-to-pull devices to be compatible with an instrumented nanoindenter expanded the testing capabilities to include in situ heating. These innovations provided quantitative mechanical testing, postmortem TEM imaging, and the ability to measure the glass transition temperature, via dynamic mechanical analysis, of freestanding polymer films. Results for each of these mentioned characterization methods are presented and discussed in terms of polymer nanomechanics. Graphic Abstract

Morphological and structural study of integrated circuits using XTEM and HREM

1990 ◽  
Vol 48 (4) ◽  
pp. 630-631
Author(s):  
L.M. Bharadwaj ◽  
L.M. Gantcheva ◽  
S. Simov ◽  
G. Balossier ◽  
J. Faure ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Ion Beam ◽  
Etching Rate ◽  
Glass Plate ◽  
Region Of Interest ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Cross Sectional ◽  
Mechanical Preparation

There is increasing interest in the use of cross-sectional transmission electron microscopy (XTEM) to understand fundamental and technological problems associated with fabrication of integrated circuit (IC). This is because with XTEM it is possible to obtain exact morphological configuration and structure at atomic level of different layers and interfaces. For the study of a MOS device we used slightly modified XTEM specimen preparation technique than reported by other authors. To monitor region of interest during mechanical preparation two techniques were used as illustrated in Fig.1. First by glueing two slabs (10 × 4 mm2) of wafer each exactly identical in terms of geometrical dimension and device features and second by glueing a transparent glass plate on the top of wafer. The epoxy has higher ion beam etching rate than other materials so to obtain uniform thinning, ion beam was centered slightly away from the epoxy line . The thinned specimens were observed under Philips CM-30 electron microscope.

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