Study of Porous Organic Ultra Low K Materials After Treatment With Various Etching and Cleaning Plasma

2004 ◽  
Author(s):  
Dong Lu ◽  
Vanissa Lim ◽  
B. Ramana Murthy ◽  
Rakesh Kumar ◽  
Du An Yan ◽  
...  
Keyword(s):  
Film Thickness ◽  
Critical Role ◽  
Interface Roughness ◽  
Surface Roughening ◽  
Structure And Property ◽  
Atomic Force ◽  
Plasma Treatments ◽  
Silk Films ◽  
Process Compatibility ◽  
Low K

Abstract In the selection of ultra low k materials, process compatibility is a very important factor. Plasma processing plays a critical role in enhanced interconnect integration. It is therefore important to study plasma interaction with the ultra low k materials and its effects on the structure and property of these materials. X-ray reflectivity (XRR) measurement can be used to measure film thickness, density and interface roughness, which are important parameters to check for after plasma treatments. In the current study, porous SiLK (p-SiLK) was treated with various plasmas, such as O2, O2/N2, H2/N2, CH2F2/Ar and CF4/O2. XRR results indicate that the density of the p-SiLK films remains unchanged after various plasma treatments. Surface roughening occurs during the plasma treatments, accompanied by the decrease in film thickness. Plasma-induced surface roughening was also observed using atomic force microscope (AFM). Such roughening is more severe for plasma treatments using oxygen-containing plasmas. FTIR analysis indicates that the chemical structure of the p-SiLK films is not significantly affected by plasma treatment. It is reasonable to conclude that oxidation of the surface plays a major role in the plasma-induced change in surface roughness and film thickness.

Application of AFP in Resolving Systematic Issue in Wafer Fabrication

2013 ◽  
Author(s):  
Hui Peng Ng ◽  
Ghim Boon Ang ◽  
Chang Qing Chen ◽  
Alfred Quah ◽  
Angela Teo ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Failure Mechanisms ◽  
Critical Role ◽  
Electrical Characterization ◽  
Process Technology ◽  
Atomic Force ◽  
Defect Localization ◽  
Non Volatile Memory ◽  
Visual Failure

Abstract With the evolution of advanced process technology, failure analysis is becoming much more challenging and difficult particularly with an increase in more erratic defect types arising from non-visual failure mechanisms. Conventional FA techniques work well in failure analysis on defectively related issue. However, for soft defect localization such as S/D leakage or short due to design related, it may not be simple to identify it. AFP and its applications have been successfully engaged to overcome such shortcoming, In this paper, two case studies on systematic issues due to soft failures were discussed to illustrate the AFP critical role in current failure analysis field on these areas. In other words, these two case studies will demonstrate how Atomic Force Probing combined with Scanning Capacitance Microscopy were used to characterize failing transistors in non-volatile memory, identify possible failure mechanisms and enable device/ process engineers to make adjustment on process based on the electrical characterization result. [1]

scholarly journals The Effect of Film Thickness and Content on Film Formation from PS/ Nanocomposites Prepared by Dip-Coating Method

2012 ◽  
Vol 2012 ◽  
pp. 1-17 ◽  
Author(s):  
M. Selin Sunay ◽  
Onder Pekcan ◽  
Saziye Ugur
Keyword(s):  
Film Thickness ◽  
Elevated Temperatures ◽  
Film Formation ◽  
Fluorescence Emission ◽  
Dip Coating ◽  
Atomic Force ◽  
Annealing Step ◽  
Coating Method ◽  
Fluorescence Emission Intensity ◽  
Dip Coating Method

Steady-state fluorescence (SSF) technique in conjunction with UV-visible (UVV) technique and atomic force microscope (AFM) was used for studying film formation from TiO2covered nanosized polystyrene (PS) latex particles (320 nm). The effects of film thickness and TiO2content on the film formation and structure properties of PS/TiO2composites were studied. For this purpose, two different sets of PS films with thicknesses of 5 and 20 μm were prepared from pyrene-(P-) labeled PS particles and covered with various layers of TiO2using dip-coating method. These films were then annealed at elevated temperatures above glass transition temperature () of PS in the range of 100–280°C. Fluorescence emission intensity, from P and transmitted light intensity, were measured after each annealing step to monitor the stages of film formation. The results showed that film formation from PS latexes occurs on the top surface of PS/TiO2composites and thus developed independent of TiO2content for both film sets. But the surface morphology of the films was found to vary with both TiO2content and film thickness. After removal of PS, thin films provide a quite ordered porous structure while thick films showed nonporous structure.

Effect of Water Temperature, pH Value, and Film Thickness on the Wettability Behaviour of Copper Surfaces Coated with Copper Using EB-PVD Technique

2019 ◽  
Vol 60 ◽  
pp. 124-141 ◽  
Author(s):  
Naser Ali ◽  
Joao Amaral Teixeira ◽  
Abdulmajid Addali
Keyword(s):  
Surface Roughness ◽  
Contact Angle ◽  
Film Thickness ◽  
Water Temperature ◽  
Ph Value ◽  
Surface Wettability ◽  
Copper Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Static Contact

This research investigates the effect of surface roughness, water temperature, and pH value on the wettability behaviour of copper surfaces. An electron beam physical vapour deposition technique was used to fabricate 25, 50, and 75 nm thin films of copper on the surface of copper substrates. Surface topographical analysis, of the uncoated and coated samples, was performed using an atomic force microscopy device to observe the changes in surface microstructure. A goniometer device was then employed to examine the surface wettability of the samples by obtaining the static contact angle between the liquid and the attached surface using the sessile drops technique. Waters of pH 4, 7, and 9 were employed as the contact angle testing fluids at a set of fixed temperatures that ranged from 20°C to 60°C. It was found that increasing the deposited film thickness reduces the surface roughness of the as-prepared copper surfaces and thus causing the surface wettability to diverge from its initial hydrophobic nature towards the hydrophilic behaviour region. A similar divergence behaviour was seen with the rise in temperature of water of pH 4, and 9. In contrast, the water of pH 7, when tested on the uncoated surface, ceased to reach a contact angle below 90o. It is believed that the observed changes in surface wettability behaviour is directly linked to the liquid temperature, pH value, surface roughness, along with the Hofmeister effect between the water and the surface in contact.

Structuring of Silicon Wafer Surfaces on the Sub-100 nm Scale by Hydrogen Plasma Treatments

2003 ◽  
Vol 788 ◽  
Author(s):  
R. Job ◽  
Y. Ma ◽  
A. G. Ulyashin
Keyword(s):  
Hydrogen Plasma ◽  
Structural Defects ◽  
Process Conditions ◽  
Force Microscopy ◽  
Czochralski Silicon ◽  
Atomic Force ◽  
Nano Structures ◽  
Plasma Treatments ◽  
The Impact ◽  
Wafer Surfaces

ABSTRACTHydrogen plasma treatments applied on standard Czochralski silicon (Cz Si) wafers cause a structuring of the surface regions on the sub-100 nm scale, i.e. a thin ‘nano-structured’ Si layer is created up to a depth of ∼ 150 nm. The formation of the ‘nano-structures’ and their evolution in dependence on the process conditions was studied. The impact of post-hydrogenation annealing on the morphology of the structural defects was studied up to 1200 °C. The H-plasma treated and annealed samples were analyzed at surface and sub-surface regions by scanning electron microscopy (SEM), atomic force microscopy (AFM), and μ-Raman spectroscopy.

Advances in Test Wafer Reclaim Technology – Wet Stripping Porous Low-k Films with No Substrate Damage

2009 ◽  
Vol 145-146 ◽  
pp. 339-342 ◽  
Author(s):  
Mark Robson ◽  
Kristin A. Fletcher ◽  
Ping Jiang ◽  
Michael B. Korzenski ◽  
A. Upham ◽  
...  
Keyword(s):  
Film Thickness ◽  
Etch Rate ◽  
Oxide Growth ◽  
Semiconductor Processing ◽  
Related Cost ◽  
Increasing Demand ◽  
Wet Etch ◽  
Low K

In semiconductor processing, test wafers are used as particle monitors, film thickness monitors for deposition and oxide growth measurements, dry/wet etch rate monitors, CMP monitors, as well as characterizing new and existing equipment and processes. Depending on fab size and capacity, monthly test wafer usage can be tens of thousands or more. Due to the ever increasing demand for silicon between the IC and solar markets and the high cost of 300mm wafers, chip manufacturers are increasing their efforts to reduce overall spending on silicon - currently by far the largest non equipment related cost [1]. One approach taken by many chip makers is the concept of extending the usable life of test wafers by re-using them as many times as possible through a reclaim process.

scholarly journals The description of friction of silicon MEMS with surface roughness: virtues and limitations of a stochastic Prandtl–Tomlinson model and the simulation of vibration-induced friction reduction

2010 ◽  
Vol 1 ◽  
pp. 163-171 ◽  
Author(s):  
W Merlijn van Spengen ◽  
Viviane Turq ◽  
Joost W M Frenken
Keyword(s):  
Surface Roughness ◽  
Critical Role ◽  
Measurement Data ◽  
Friction Model ◽  
Friction Reduction ◽  
Atomic Scale ◽  
Mems Devices ◽  
Tomlinson Model ◽  
Atomic Force ◽  
On Chip

We have replaced the periodic Prandtl–Tomlinson model with an atomic-scale friction model with a random roughness term describing the surface roughness of micro-electromechanical systems (MEMS) devices with sliding surfaces. This new model is shown to exhibit the same features as previously reported experimental MEMS friction loop data. The correlation function of the surface roughness is shown to play a critical role in the modelling. It is experimentally obtained by probing the sidewall surfaces of a MEMS device flipped upright in on-chip hinges with an AFM (atomic force microscope). The addition of a modulation term to the model allows us to also simulate the effect of vibration-induced friction reduction (normal-force modulation), as a function of both vibration amplitude and frequency. The results obtained agree very well with measurement data reported previously.

Direct Measurement of Ion Beam Induced, Nanoscale Roughening of GaN

2005 ◽  
Vol 864 ◽  
Author(s):  
Bentao Cui ◽  
P. I. Cohen ◽  
A. M. Dabiran
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Surface Relaxation ◽  
Surface Roughening ◽  
High Energy Electron ◽  
Force Microscopy ◽  
Atomic Force ◽  
Continuum Equation ◽  
Argon Ions ◽  
Nanoscale Patterns

AbatractThe formation of ion induced nanoscale patterns such as ripple, dots or pores can be described by a linear continuum equation consisting of a surface roughening term due to curvature-dependent sputtering or asymmetric attachment of vacancies, and a surface smoothing term due to thermal or ion-induced diffusion. By studying ion-induced dimple volume change using atomic force microscopy, we show a method to measure the ion-roughening coefficient. Using this method, we found the roughening coefficient í was 45 nm2/sec at 730K for initial ion etchings with 300 eV Argon ions. Cathodoluminescence measurements indicated Ga-vacancy formation during ion bombardment. The activation energy for surface relaxation after ion etching was about 0.12 eV as measured by reflection high energy electron diffraction.

scholarly journals All chemical YBa2Cu3O7 superconducting multilayers: Critical role of CeO2 cap layer flatness

2009 ◽  
Vol 24 (4) ◽  
pp. 1446-1455 ◽  
Author(s):  
M. Coll ◽  
J. Gàzquez ◽  
R. Huhne ◽  
B. Holzapfel ◽  
Y. Morilla ◽  
...  
Keyword(s):  
Critical Role ◽  
High Energy ◽  
Buffer Layers ◽  
Solution Deposition ◽  
Ybco Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Densities ◽  
Atomically Flat

New advances toward microstructural improvement of epitaxial CeO2 films grown by chemical solution deposition and their use as buffer layers for YBa2Cu3O7 (YBCO) films are presented. We demonstrate that the degree of epitaxy and the fraction of (001) atomically flat surface area are controlled by the incorporation of tetravalent (Zr4+) or trivalent (Gd3+) cations into the ceria lattice. The degree of epitaxy has been investigated by means of Rutherford backscattering spectroscopy-channeling and reflection high-energy electron diffraction, and a new methodology is also presented to quantify the fraction of (001) atomically flat area from atomic force microscopy images. Results are further correlated with the superconducting properties, microstructure, and texture of YBCO films grown by the trifluoroacetate route. A comparison with pulsed laser deposition and YBCO films grown on the same ceria layers is also presented. This growth procedure has allowed us to obtain all chemical multilayer films with controlled microstructure and critical current densities above 4 MA cm−2 at 77 K.

Comparison of the Fracture Behavior of Brittle ILD Films used in the BEOL in Dry and Wet Environment using Nanoindentation

2006 ◽  
Vol 914 ◽  
Author(s):  
Eva Simonyi ◽  
Michael Lane ◽  
Erik Liniger ◽  
Alfred Grill
Keyword(s):  
Fracture Toughness ◽  
Film Thickness ◽  
Manufacturing Process ◽  
Fracture Behavior ◽  
Imaging Methods ◽  
Afm Imaging ◽  
Critical Film Thickness ◽  
Low K

AbstractDuring the manufacturing process of the BEOL the low-k brittle ILD dielectrics are exposed to wet environments. These environments could and do affect the films fracture toughness, the so called critical film thickness, above which spontaneous cracking occurs. Nanoindentation combined with AFM imaging methods allow to study these phenomena.

Adhesion Strength Evaluation of Low-k Interconnect Structures Using a Nanoscratch Method

2004 ◽  
Vol 812 ◽  
Author(s):  
Jiping Ye ◽  
Kenichi Ueoka ◽  
Nobuo Kojima ◽  
Junichi Shimanuki ◽  
Miyoko Shimada ◽  
...  
Keyword(s):  
Friction Coefficient ◽  
Critical Load ◽  
Adhesion Strength ◽  
Rare Gas ◽  
Cohesive Failure ◽  
Atomic Force ◽  
Gas Plasma ◽  
Transmission Electron ◽  
Plasma Pretreatment ◽  
Low K

AbstractA convenient nanoscratch method was combined with atomic force microscope (AFM) and transmission electron microscope (TEM) observations to conduct the first-ever evaluation of the adhesion strength of a complicated microstructure Cu/Ta/TaN/pSiO2/low-k/SiC/pSiO2/Si-substrate with the aim of correlating the fracture strength with the results of chemical mechanical polishing (CMP) tests. Concretely, this evaluation focused on the fact that specimens having a low-k layer pretreated with rare-gas plasma prior to the deposition of the SiO2 layer exhibited low delaminated densities in the Cu CMP process. It was found that a specimen with the rare-gas plasma pretreatment exhibited a higher friction coefficient, a higher critical load and brittle adhesive failure resulting from delamination at the interface between the low-k and SiC layers. A specimen without the rare-gas plasma pretreatment displayed a lower friction coefficient, a lower critical load, and ductile cohesive failure in the low-k layer. Because less plastic deformation was observed in the low-k layer subjected to the rare-gas plasma pretreatment, it is assumed that the pretreatment reinforced the mechanical properties of the low-k layer, making it more resistant to ductile cohesive failure. These results agreed with the CMP test data and indicated that the nanoscratch method makes it possible to predict the ability of complicated Cu/low-k interconnect structures to withstand the CMP process.

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