Wafer Level Atomic Force Probing

2010 ◽  
Author(s):  
Terence Kane ◽  
Sweta Pendyala ◽  
Michael P. Tenney
Keyword(s):  
Silicon On Insulator ◽  
Wafer Level ◽  
Access Memory ◽  
Laboratory Practice ◽  
Deep Trench ◽  
Atomic Force ◽  
Capacitance Voltage ◽  
First Time ◽  
Process Level ◽  
Insight Into

Abstract The laboratory practice of employing atomic force probing (AFP) using AFP current imaging and Nanoprobe Capacitance-Voltage Spectroscopy (NCVS) at contact level (CA) for identfication of front end of line (FEOL) defects in MOSFET devices, especially for silicon on insulator applications has been extensively detailed [1,2,3]. The introduction of Nanoprobe Capacitance Voltage Spectroscopy (NCVS) on bulk silicon wafers and silicon on insulator (SOI) wafers to characterize discrete MOSFET and SOI embedded dynamic ramdom access memory devices (eDRAM) without the time consuming delayering methods of conventional scanning capacitance microscopy has also been highlighted [1,2,3,4,5,6]. Typically, this laboratory AFP characterization is employed on die fragments sampled from whole wafers following back end of the line (BEOL) metallization processing and test. The process vintage of this hardware can be as much as three months after the critical FEOL processing has occurred. This paper is intended to describe for the first time the methodology of applying AFP on whole 300mm wafers at the post CA chemical-mechanical polishing (CMP) process level to provide a real time insight into yield issues that would not be detected until subsequent BEOL metallization processing and testing. This new AFP tool incorporates enhanced features enabling both DC measurements as well as AC capacitance voltage measurements of discrete deep trench embedded DRAM (eDRAM) devices for 32nm, 28nm, and 20nm node technologies.

Nanoprobe Capacitance-Voltage Spectroscopy (NCVS) Localization of 32nm SOI SRAM Array Failure

2009 ◽  
Author(s):  
Terence Kane ◽  
Michael P. Tenney
Keyword(s):  
Silicon On Insulator ◽  
Memory Devices ◽  
Access Memory ◽  
Metal Gate ◽  
Soi Mosfet ◽  
Scanning Capacitance Microscopy ◽  
High K ◽  
Capacitance Voltage

Abstract The technique of Nanoprobe Capacitance-Voltage Spectroscopy (NCVS) at contact level (CA) for identfication of FEOL defects in MOSFET devices, especially for silicon on insulator applications has been extensively detailed [1]. The introduction of Nanoprobe Capacitance Voltage Spectroscopy (NCVS) of discrete MOSFET and SOI embedded dynamic ramdon access memory devices (eDRAM) without the time consuming delayering methods of conventional scanning capacitance microscopy have also been highlighted [2]. This paper is intended to describe the advantages of NCVS to localize defects in specific MOSFET devices at CA level as well as to identify resistive BEOL via interconnections and FEOL defective high k metal gate structures without the attendant time consuming delayering steps employed with classical SCM methods. Localization of a FEOL defect in a discrete 32nm SOI MOSFET device in SRAM array causing a vertical pair cell failure signature will be discussed.

Frequency Sensitive Soft Fails in SRAM Arrays

2010 ◽  
Author(s):  
Sweta Pendyala ◽  
Terence Kane ◽  
Michael Tenney ◽  
Richard Oldrey ◽  
Manuel Villalobos ◽  
...  
Keyword(s):  
Paradigm Shift ◽  
Capacitance Measurement ◽  
Physical Analysis ◽  
Voltage Measurement ◽  
Electrical Measurements ◽  
Root Cause ◽  
Atomic Force ◽  
Capacitance Voltage ◽  
First Time

Abstract Root cause analysis of frequency sensitive “soft” failures in SRAM arrays pose unusual challenges to the failure analyst. Conventional atomic force probe (AFP) DC measurements cannot reliably identify the failure source. The employment of tester based schmoo screening have been shown to correlate with AFP AC quantitative capacitance measurements for the first time. The technique of Nanoprobe Capacitance-Voltage Spectroscopy (NCVS) at contact level (CA) for localization has been previously described [1,2,3]. By exploiting the dC/dV component of the NCVS signal shown in Figure 1 and integrating this output, a quantitative capacitance versus voltage measurement can be demonstrated. This quantitative capacitance measurement identified a frequency sensitve horizontal pair failure (HPF) in the SRAM array. Subsequent process vintage analysis identified the source and eliminated these frequency sensitive HPF characterisics. Given the sensitive nature of these fails, conventional physical analysis methods of TEM EELS, and cross section scanning capacitance analysis were not successful in finding the root cause. This underlies a paradigm shift in failure analysis. Electrical measurements may be the only means to identify a process problem and follow-up process vintage analysis is required to solution the root cause.

Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis

2015 ◽  
Author(s):  
LiLung Lai ◽  
Nan Li ◽  
Qi Zhang ◽  
Tim Bao ◽  
Robert Newton
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Pulsed Current ◽  
Electrical Measurements ◽  
Device Failure ◽  
Mos Devices ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rising Time

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.

Analysis of FSRAM Single Bit Failures Due to Unique Dislocations

1998 ◽  
Author(s):  
Phil Schani ◽  
S. Subramanian ◽  
Vince Soorholtz ◽  
Pat Liston ◽  
Jamey Moss ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Temperature Sensitive ◽  
Wafer Level ◽  
Top Down ◽  
Access Memory ◽  
Transmission Electron ◽  
Contact Processing

Abstract Temperature sensitive single bit failures at wafer level testing on 0.4µm Fast Static Random Access Memory (FSRAM) devices are analyzed. Top down deprocessing and planar Transmission Electron Microscopy (TEM) analyses show a unique dislocation in the substrate to be the cause of these failures. The dislocation always occurs at the exact same location within the bitcell layout with respect to the single bit failing data state. The dislocation is believed to be associated with buried contact processing used in this type of bitcell layout.

In FAB 300mm Wafer Level Atomic Force Probe Characterization

2012 ◽  
Author(s):  
Terence Kane
Keyword(s):  
Electrical Characterization ◽  
Dark Field ◽  
Wafer Level ◽  
Electrical Measurements ◽  
Manufacturing Line ◽  
Atomic Force ◽  
Monitoring Tools ◽  
Voltage Contrast ◽  
The Cost ◽  
Non Destructive

Abstract A 300mm wafer atomic force prober (AFP) has been installed into IBM’s manufacturing line to enable rapid, nondestructive electrical identification of defects. Prior to this tool many of these defects could not detected until weeks or months later. Moving failure analysis to the FAB provides a means of complementing existing FAB inspection and defect review tools as well as providing independent, non-destructive electrical measurements at an early point in the manufacturing cycle [1] Once the wafer sites are non destructively AFP characterized, the wafer is returned to its front opening unified pod (FOUP) carrier and may be reintroduced into the manufacturing line without disruption for further inspection or processing. Whole wafer atomic force probe electrical characterization has been applied to 32nm, 28nm, 20nm and 14nm node technologies. In this paper we explore the cost benefits of performing non-destructive AFP measurements on whole wafers. We have found the methodology of employing a whole wafer AFP tool complements existing in-line manufacturing monitoring tools such as brightfield/dark field optical inspection, SEM in-line inspection and in-line E-beam voltage contrast inspection (EBI).

Aleksey Peshkov as an editor of Samarskaya Gazeta

2020 ◽  
pp. 128-138
Author(s):  
A. S. Bik-Bulatov
Keyword(s):  
Local History ◽  
Organizational Skills ◽  
First Time ◽  
New Evidence ◽  
Insight Into ◽  
Shed Light

The article uses little known letters of M. Gorky, many of which were published for the first time in 1997, as well as findings of Samara-based experts in local history to shed light on the writer’s work as editor-in-chief of the Samarskaya Gazeta newspaper in 1895. The researcher introduces hitherto unstudied reminiscences of the journalist D. Linyov (Dalin) about this period, which reference a letter by Gorky, now lost. The paper details a newly discovered episode of Gorky’s professional biography as a journalist: it concerns his campaign against a Samara ‘she-wolf,’ the madam of a local brothel A. Neucheva. Linyov’s reminiscences turn out to be an important and interesting source, offering an insight into the daily grind of the young editor Gorky, providing new evidence of his excellent organizational skills, and describing his moral and social stance. The author presents his work in the context of a recently initiated broader discussion about the need to map out all Russian periodicals for the period until 1917, as well as all research devoted to individual publications.

scholarly journals Structure-Properties Correlation of Cross-Linked Penicillin G Acylase Crystals

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 451
Author(s):  
Marta Kubiak ◽  
Janine Mayer ◽  
Ingo Kampen ◽  
Carsten Schilde ◽  
Rebekka Biedendieck
Keyword(s):  
Mechanical Stability ◽  
Structural Characteristics ◽  
Penicillin G ◽  
Bacillus Species ◽  
Diffusion Limitations ◽  
Small Water ◽  
Long Term Stability ◽  
Atomic Force ◽  
First Time

In biocatalytic processes, the use of free enzymes is often limited due to the lack of long-term stability and reusability. To counteract this, enzymes can be crystallized and then immobilized, generating cross-linked enzyme crystals (CLECs). As mechanical stability and activity of CLECs are crucial, different penicillin G acylases (PGAs) from Gram-positive organisms have proven to be promising candidates for industrial production of new semisynthetic antibiotics, which can be crystallized and cross-linked to characterize the resulting CLECs regarding their mechanical and catalytic properties. The greatest hardness and Young’s modulus determined by indentation with an atomic force microscope were observed for CLECs of Bacillus species FJAT-PGA CLECs (26 MPa/1450 MPa), followed by BmPGA (Priestia megaterium PGA, 23 MPa/1170 MPa) and BtPGA CLECs (Bacillus thermotolerans PGA, 11 MPa/614 MPa). In addition, FJAT- and BtPGA CLECs showed up to 20-fold higher volumetric activities compared to BmPGA CLECs. Correlation to structural characteristics indicated that a high solvent content and low number of cross-linking residues might lead to reduced stability. Furthermore, activity seems to be restricted by small water channels due to severe diffusion limitations. To the best of our knowledge, we show for the first time in this study that the entire process chain for the characterization of diverse industrially relevant enzymes can be performed at the microliter scale to discover the most important relationships and limitations.

scholarly journals Comparative Study of Chemical Compositions and Antioxidant Capacities of Oils Obtained from 15 Macadamia (Macadamia integrifolia) Cultivars in China

Foods ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 1031
Author(s):  
Xixiang Shuai ◽  
Taotao Dai ◽  
Mingshun Chen ◽  
Ruihong Liang ◽  
Liqing Du ◽  
...  
Keyword(s):  
Palmitoleic Acid ◽  
Linear Regression Analysis ◽  
Monounsaturated Fatty Acids ◽  
Multiple Linear Regression Analysis ◽  
Chemical Compositions ◽  
Macadamia Integrifolia ◽  
Antioxidant Capacities ◽  
Squalene Content ◽  
First Time ◽  
Insight Into

The planting area of macadamia in China accounted for more than one third of the world’s planted area. The lipid compositions, minor components, and antioxidant capacities of fifteen varieties of macadamia oil (MO) in China were comparatively investigated. All varieties of MO were rich in monounsaturated fatty acids, mainly including oleic acid (61.74–66.47%) and palmitoleic acid (13.22–17.63%). The main triacylglycerols of MO were first time reported, including 19.2–26.1% of triolein, 16.4–18.2% of 1-palmitoyl-2,3-dioleoyl-glycerol, and 11.9–13.7% of 1-palmitoleoyl-2-oleoyl-3-stearoyl-glycerol, etc. The polyphenol, α-tocotrienol and squalene content varied among the cultivars, while Fuji (791) contained the highest polyphenols and squalene content. Multiple linear regression analysis indicated the polyphenols and squalene content positively correlated with the antioxidant capacity. This study can provide a crucial directive for the breeding of macadamia and offer an insight into industrial application of MO in China.

scholarly journals All-inorganic perovskite quantum dot light-emitting memories

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Meng-Cheng Yen ◽  
Chia-Jung Lee ◽  
Kang-Hsiang Liu ◽  
Yi Peng ◽  
Junfu Leng ◽  
...  
Keyword(s):  
Random Access ◽  
Optoelectronic Device ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Light Emitting ◽  
Inorganic Perovskite ◽  
Emission Color ◽  
Perovskite Quantum Dots ◽  
In Series ◽  
First Time

AbstractField-induced ionic motions in all-inorganic CsPbBr3 perovskite quantum dots (QDs) strongly dictate not only their electro-optical characteristics but also the ultimate optoelectronic device performance. Here, we show that the functionality of a single Ag/CsPbBr3/ITO device can be actively switched on a sub-millisecond scale from a resistive random-access memory (RRAM) to a light-emitting electrochemical cell (LEC), or vice versa, by simply modulating its bias polarity. We then realize for the first time a fast, all-perovskite light-emitting memory (LEM) operating at 5 kHz by pairing such two identical devices in series, in which one functions as an RRAM to electrically read the encoded data while the other simultaneously as an LEC for a parallel, non-contact optical reading. We further show that the digital status of the LEM can be perceived in real time from its emission color. Our work opens up a completely new horizon for more advanced all-inorganic perovskite optoelectronic technologies.

scholarly journals ASKAP observations of multiple rapid scintillators reveal a degrees-long plasma filament

2021 ◽  
Vol 502 (3) ◽  
pp. 3294-3311
Author(s):  
Yuanming Wang ◽  
Artem Tuntsov ◽  
Tara Murphy ◽  
Emil Lenc ◽  
Mark Walker ◽  
...  
Keyword(s):  
Physical Properties ◽  
Angular Width ◽  
Scattering Medium ◽  
Central Frequency ◽  
Linear Arrangement ◽  
Plasma Filament ◽  
Kinematic Models ◽  
Tidal Stream ◽  
First Time ◽  
Insight Into

ABSTRACT We present the results from an Australian Square Kilometre Array Pathfinder search for radio variables on timescales of hours. We conducted an untargeted search over a 30 deg2 field, with multiple 10-h observations separated by days to months, at a central frequency of 945 MHz. We discovered six rapid scintillators from 15-min model-subtracted images with sensitivity of $\sim\! 200\, \mu$Jy/beam; two of them are extreme intra-hour variables with modulation indices up to $\sim 40{{\ \rm per\ cent}}$ and timescales as short as tens of minutes. Five of the variables are in a linear arrangement on the sky with angular width ∼1 arcmin and length ∼2 degrees, revealing the existence of a huge plasma filament in front of them. We derived kinematic models of this plasma from the annual modulation of the scintillation rate of our sources, and we estimated its likely physical properties: a distance of ∼4 pc and length of ∼0.1 pc. The characteristics we observe for the scattering screen are incompatible with published suggestions for the origin of intra-hour variability leading us to propose a new picture in which the underlying phenomenon is a cold tidal stream. This is the first time that multiple scintillators have been detected behind the same plasma screen, giving direct insight into the geometry of the scattering medium responsible for enhanced scintillation.

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