Advanced Physical Analysis Methodology for Yield and Reliability of 28-nm, Bulk-Si, Flip-Chip ICs Using SEM and Backside Deprocessing

2012 ◽  
Author(s):  
Yuanjing (Jane) Li ◽  
Steven Scott ◽  
Howard Lee Marks
Keyword(s):  
Flip Chip ◽  
Focused Ion Beam ◽  
Process Development ◽  
Ion Beam ◽  
Physical Analysis ◽  
Electron Microscopic ◽  
Analysis Methodology ◽  
Processing Techniques ◽  
20 Nm ◽  
Insight Into

Abstract This paper presents a backside chip-level physical analysis methodology using backside de-processing techniques in combination with optimized Scanning Electron Microscopic (SEM) imaging technique and Focused Ion Beam (FIB) cross sectioning to locate and analyze defects and faults in failing IC devices. The case studies illustrate the applications of the method for 28nm flip chip bulk Si CMOS devices and demonstrate how it is used in providing insight into the fab process and design for process and yield improvements. The methods are expected to play an even more important role during 20-nm process development and yield-ramping.

Advanced electron microscopic techniques provide a deeper insight into the peculiar features of podocytes

2015 ◽  
Vol 309 (12) ◽  
pp. F1082-F1089 ◽  
Author(s):  
Tillmann Burghardt ◽  
Florian Hochapfel ◽  
Benjamin Salecker ◽  
Christine Meese ◽  
Hermann-Josef Gröne ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Electron Tomography ◽  
Ion Beam ◽  
Electron Microscopic ◽  
Glomerular Filtration Barrier ◽  
Filtration Barrier ◽  
Future Work ◽  
Human And Mouse ◽  
Insight Into ◽  
Microscopic Techniques

Podocytes constitute the outer layer of the glomerular filtration barrier, where they form an intricate network of interdigitating foot processes which are connected by slit diaphragms. A hitherto unanswered puzzle concerns the question of whether slit diaphragms are established between foot processes of the same podocyte or between foot processes of different podocytes. By employing focused ion beam-scanning electron microscopy (FIB-SEM), we provide unequivocal evidence that slit diaphragms are formed between foot processes of different podocytes. We extended our investigations of the filtration slit by using dual-axis electron tomography of human and mouse podocytes as well as of Drosophila melanogaster nephrocytes. Using this technique, we not only find a single slit diaphragm which spans the filtration slit around the whole periphery of the foot processes but additional punctate filamentous contacts between adjacent foot processes. Future work will be necessary to determine the proteins constituting the two types of cell-cell contacts.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

The Novel Dopant Profile Inspection Methodology by FIB

2010 ◽  
Author(s):  
Po Fu Chou ◽  
Li Ming Lu
Keyword(s):  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Real Sample ◽  
Physical Analysis ◽  
The Novel ◽  
High Contrast ◽  
Dopant Profile ◽  
P Type

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.

Manufacturing In-Line Whole Wafer Focused Ion Beam (FIB) Memory Address Descramble Verification

2008 ◽  
Author(s):  
Steven B. Herschbein ◽  
Hyoung H. Kang ◽  
Scott L. Jansen ◽  
Andrew S. Dalton
Keyword(s):  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Random Access ◽  
Cell Counting ◽  
Test Results ◽  
Laboratory Procedure ◽  
Memory Array ◽  
Dual Beam ◽  
Process Level

Abstract Test engineers and failure analyst familiar with random access memory arrays have probably encountered the frustration of dealing with address descrambling. The resulting nonsequential internal bit cell counting scheme often means that the location of the failing cell under investigation is nowhere near where it is expected to be. A logical to physical algorithm for decoding the standard library block might have been provided with the design, but is it still correct now that the array has been halved and inverted to fit the available space in a new processor chip? Off-line labs have traditionally been tasked with array layout verification. In the past, hard and soft failures could be induced on the frontside of finished product, then bitmapped to see if the sites were in agreement. As density tightened, flip-chip FIB techniques to induce a pattern of hard fails on packaged devices came into practice. While the backside FIB edit method is effective, it is complex and expensive. The installation of an in-line Dual Beam FIB created new opportunities to move FA tasks out of the lab and into the FAB. Using a new edit procedure, selected wafers have an extensive pattern of defects 'written' directly into the memory array at an early process level. Bitmapping of the RAM blocks upon wafer completion is then used to verify correlation between the physical damaged cells and the logical sites called out in the test results. This early feedback in-line methodology has worked so well that it has almost entirely displaced the complex laboratory procedure of backside FIB memory array descramble verification.

scholarly journals Insight into <i>Emiliania huxleyi</i> coccospheres by focused ion beam sectioning

2015 ◽  
Vol 12 (3) ◽  
pp. 825-834 ◽  
Author(s):  
R. Hoffmann ◽  
C. Kirchlechner ◽  
G. Langer ◽  
A. S. Wochnik ◽  
E. Griesshaber ◽  
...  
Keyword(s):  
Electron Micrographs ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Emiliania Huxleyi ◽  
Exponential Growth Phase ◽  
Cell Diameter ◽  
Scanning Electron Micrographs ◽  
Ongoing Debate ◽  
Insight Into ◽  
Sinking Velocity

Abstract. Coccospheres of a cultured Emiliania huxleyi clone were sampled in the exponential growth phase and sectioned using a focused ion beam microscope. An average of 69 sections and the corresponding secondary electron micrographs per coccosphere provided detailed information on coccosphere architecture. The coccospheres feature 2–3 layers on average and 20 coccoliths per cell, of which only 15 can be seen in conventional scanning electron micrographs. The outer coccosphere diameter was positively correlated with the number of coccolith layers. By contrast, the inner coccosphere diameter (around 4.36 μm), and hence the cell diameter, was quasi-constant. Coccoliths were not evenly distributed across the coccosphere, resulting more often than not in one part of the coccosphere displaying more coccolith layers than the other. The architectural data allowed for the calculation of the PIC $/$ POC ratio, the density and the sinking velocity of individual cells. The correlation of these parameters has implications for the ongoing debate on the function of coccoliths.

Electromigration Reliability of Dual-Damascene Cu/Oxide Interconnects

2000 ◽  
Vol 612 ◽  
Author(s):  
Ennis T. Ogawa ◽  
Volker A. Blaschke ◽  
Alex Bierwag ◽  
Ki-Don Lee ◽  
Hideki Matsuhashi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Process Development ◽  
Ion Beam ◽  
Structure Design ◽  
Test Structure ◽  
Dual Damascene ◽  
Interconnect Reliability ◽  
Line Elements ◽  
Larger Sample ◽  
A Current

AbstractAn electromigration study has determined the lifetime characteristics and failure mode of dual-damascene Cu/oxide interconnects at temperatures ranging between 200 and 325 °C at a current density of 1.0 MA/cm2. A novel test structure design is used which incorporates a repeated chain of “Blech-type” line elements. The large interconnect ensemble permits a statistical approach to addressing interconnect reliability issues using typical failure analysis tools such as focused ion beam imaging. The larger sample size of the test structure thus enables efficient identification of “early failure” or extrinsic modes of interconnect failure associated with process development. The analysis so far indicates that two major damage modes are observable: (1) via-voiding and (2) voiding within the damascene trench.

Surface Modification Energized by FIB: The Influence of Etch Rates & Aspect Ratio on Ripple Wavelengths

2006 ◽  
Vol 960 ◽  
Author(s):  
Warren MoberlyChan
Keyword(s):  
Aspect Ratio ◽  
Self Assembly ◽  
Focused Ion Beam ◽  
Process Development ◽  
Ion Beam ◽  
Natural Diamond ◽  
Single Crystal Silicon ◽  
Nanometer Scale ◽  
Crystal Silicon ◽  
Etch Rates

ABSTRACTIon beams have been used to modify surface topography, producing nanometer-scale modulations (and even subnanometer ripples in this work) that have potential uses ranging from designing self-assembly structures, to controlling stiction of micromachined surfaces, to providing imprint templates for patterned media. Modern computer-controlled Focused Ion Beam tools enable alternating submicron patterned zones of such ion-eroded surfaces, as well as dramatically increasing the rate of ion beam processing. The DualBeam FIB/SEM also expedites process development while minimizing the use of materials that may be precious (Diamond) and/or produce hazardous byproducts (Beryllium). A FIB engineer can prototype a 3-by-3-by-3 matrix of variables in tens of minutes and consume as little as zeptoliters of material; whereas traditional ion beam processing would require tens of days and tens of precious wafers. Saturation wavelengths have been reported for ripples on materials such as single crystal silicon or diamond (∼200nm); however this work achieves wavelengths >400nm on natural diamond. Conversely, Be can provide a stable and ordered 2-dimensional array of <40nm periodicity. Also ripples <0.4nm are fabricated on carbon-base surfaces, and these quantized picostructures are measured by HR-TEM and electron diffraction. Rippling is a function of material, ion beam, and angle; but is also controlled by chemical environment, redeposition, and aspect ratio. Ideally a material has a constant yield (atoms sputtered off per incident ion); however, pragmatic FIB processes, coupled with the direct metrological feedback in a DualBeam tool, reveal etch rates do not remain constant for nanometer-scale processing. Control of rippling requires controlled metrology, and robust software tools are developed to enhance metrology. In situ monitoring of the influence of aspect ratio and redeposition at the micron scale correlates to the rippling fundamentals that occur at the nanometer scale and are controlled by the boundary conditions of FIB processing.

scholarly journals Insight into the Characteristics of Novel Desmin-Immunopositive Perivascular Cells of the Anterior Pituitary Gland Using Transmission and Focused Ion Beam Scanning Electron Microscopy

2021 ◽  
Vol 22 (16) ◽  
pp. 8630
Author(s):  
Depicha Jindatip ◽  
Rebecca Wan-Yan Poh ◽  
Ken Fujiwara
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Endoplasmic Reticulum ◽  
Pituitary Gland ◽  
Anterior Pituitary ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Cell Type ◽  
Insight Into ◽  
Scanning Electron

Recently, another new cell type was found in the perivascular space called a novel desmin-immunopositive perivascular (DIP) cell. However, the differences between this novel cell type and other nonhormone-producing cells have not been clarified. Therefore, we introduced several microscopic techniques to gain insight into the morphological characteristics of this novel DIP cell. We succeeded in identifying novel DIP cells under light microscopy using desmin immunocryosection, combining resin embedding blocks and immunoelectron microscopy. In conventional transmission electron microscopy, folliculostellate cells, capsular fibroblasts, macrophages, and pericytes presented a flat cisternae of rough endoplasmic reticulum, whereas those of novel DIP cells had a dilated pattern. The number of novel DIP cells was greatest in the intact rats, though nearly disappeared under prolactinoma conditions. Additionally, focused ion beam scanning electron microscopy showed that these novel DIP cells had multidirectional processes and some processes reached the capillary, but these processes did not tightly wrap the vessel, as is the case with pericytes. Interestingly, we found that the rough endoplasmic reticulum was globular and dispersed throughout the cytoplasmic processes after three-dimensional reconstruction. This study clearly confirms that novel DIP cells are a new cell type in the rat anterior pituitary gland, with unique characteristics.

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