Focused Ion Beam Circuit Edit on Copper Redistribution Layer

2012 ◽  
Author(s):  
Lorenzo Motta ◽  
Paolo Veneto ◽  
Mark Antolik ◽  
Donato Di Donato
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
Three Dimensions ◽  
Back Side ◽  
Success Rates ◽  
Front Side ◽  
Continuous Development ◽  
Cu Metallization ◽  
Reduced Time

Abstract Focused ion beam (FIB) circuit edit (CE) is an integral part of IC debug, fault-isolation, and low yield analysis. Regarding FIB microsurgery, complexity is growing with the shrinking of dimensions of lower level metallization while the redistribution layer (RDL) structures can increase in all three dimensions. This requires continuous development of CE processes to address these opposite dimension trends and material variations. There are two venues to address CE, accessing from the front side (FS) or from the back side (BS) of an IC. This paper describes the FS techniques and methodologies developed to edit the RDL technology. The goal of this work is to demonstrate on a Cu GND/power plane the performance of the halogen-based contamination process. Results shows that the benefit of reduced time to remove thick Cu metallization is surely advantageous for CE throughput as well as for improving edit success rates.

FIB Micro-Surgery on Flip-Chips from the Backside

1998 ◽  
Author(s):  
Raymond Lee ◽  
Nicholas Antoniou
Keyword(s):  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Back Side ◽  
Bulk Silicon ◽  
Front Side ◽  
Large Hole ◽  
Area Of Interest ◽  
Flip Chip Packaging ◽  
Micro Surgery

Abstract The increasing use of flip-chip packaging is challenging the ability of conventional Focused Ion Beam (FIB) systems to perform even the most basic device modification and debug work. The inability to access the front side of the circuit has severely reduced the usefulness of tradhional micro-surgery. Advancements in FIB technology and its application now allow access to the circuitry from the backside through the bulk silicon. In order to overcome the problem of imaging through thick silicon, a microscope with Infra Red (IR) capability has been integrated into the FIB system. Navigation can now be achieved using the IR microscope in conjunction with CAD. The integration of a laser interferometer stage enables blind navigation and milling with sub-micron accuracy. To optimize the process, some sample preparation is recommended. Thinning the sample to a thickness of about 100 µm to 200 µm is ideal. Once the sample is thinned, it is then dated in the FIB and the area of interest is identified using the IR microscope. A large hole is milled using the FIB to remove most of the silicon covering the area of interest. At this point the application is very similar to more traditional FIB usage since there is a small amount of silicon to be removed in order to expose a node, cut it or reconnect it. The main differences from front-side applications are that the material being milled is conductive silicon (instead of dielectric) and its feature-less and therefore invisible to a scanned ion beam. In this paper we discuss in detail the method of back-side micro-surgery and its eflkcton device performance. Failure Analysis (FA) is another area that has been severely limited by flip-chip packaging. Localized thinning of the bulk silicon using FIB technology oflkrs access to diagnosing fdures in flip-chip assembled parts.

scholarly journals Practical Methodologies in Restoring Initial Failure Mode and Backside Focused Ion Beam Cross-Section for Defect Visualization

2021 ◽  
Author(s):  
Alvina Jean Tampos ◽  
Karl Villareal
Keyword(s):  
Failure Mode ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Image Sensor ◽  
Fault Isolation ◽  
Third Party ◽  
Oxide Semiconductor ◽  
Back Side

Abstract Complementary Metal-Oxide Semiconductor (CMOS) Image Sensors are gaining popularity most especially in Automotive Safety and Advanced Driver-Assistance Systems (ADAS) applications. Customer application modules involve oftentimes a third party supplier. When failures involve interaction between an image sensor die and the customer's module, the Failure Analyst has to know the exact failure mechanism to pinpoint whether root cause is in the die fabrication (fab) or packaging assembly (third party supplier). Challenges can befall the analyst: failure modes can recover which renders the unit functional and laboratories most often do not have complete sophisticated analytical laboratory equipment for electrical testing, fault isolation and sample preparation. In this paper, a case study of a CMOS Image Sensor is presented wherein the failure mode recovered which was restored and how the structural limitations were overcome for fault isolation on both front- and back-side. A modified process flow was performed to visualize the defect through backside Focused Ion Beam (FIB) cross-section.

Pulse Laser Ablation Techniques for IC Package Substrate Modifications and Validation

2016 ◽  
Author(s):  
Matthew M. Mulholland ◽  
Ahmed A. Helmy ◽  
Anthony V. Dao
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Pulse Laser ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Back Side ◽  
Front Side ◽  
Local Approach ◽  
Ic Package ◽  
Level Analysis

Abstract Post silicon validation techniques specifically Focused Ion Beam (FIB) circuit editing and Failure Analysis (FA) require sample preparation on Integrated Circuits (IC). Although these preparation techniques are typically done globally across the encapsulated and silicon packaging materials, in some scenarios with tight mechanical or thermal boundary conditions, only a local approach can be attempted for the analysis. This local approach to access the underlying features, such as circuits, solder bumps, and electrical traces can be divided into two modification approaches. The back side approach is typically done for die level analysis by de-processing through encapsulated mold compound and silicon gaining access to the silicon transistor level. On the other hand, the front side approach is typically used for package level analysis by de-processing the ball grid array (BGA) and package substrate layers. Both of these local de-processing approaches can be done by using the conventional Laser Chemical Etching (LCE) platforms. The focus of this paper will be to investigate a front side modification approach to provide substrate material removal solutions. Process details and techniques will be discussed to gain access to metal signals for further failure analysis and debug. A pulse laser will be used at various processing stages to de-process IC package substrate materials.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Automatic Determination of Optimal FIB Operations for Improved Circuit Probing and Fast Reconfiguration

2000 ◽  
Author(s):  
Romain Desplats ◽  
Timothee Dargnies ◽  
Jean-Christophe Courrege ◽  
Philippe Perdu ◽  
Jean-Louis Noullet
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Front Side ◽  
Automatic Determination ◽  
Metal Line ◽  
New Approach ◽  
Metal Layers

Abstract Focused Ion Beam (FIB) tools are widely used for Integrated Circuit (IC) debug and repair. With the increasing density of recent semiconductor devices, FIB operations are increasingly challenged, requiring access through 4 or more metal layers to reach a metal line of interest. In some cases, accessibility from the front side, through these metal layers, is so limited that backside FIB operations appear to be the most appropriate approach. The questions to be resolved before starting frontside or backside FIB operations on a device are: 1. Is it do-able, are the metal lines accessible? 2. What is the optimal positioning (e.g. accessing a metal 2 line is much faster and easier than digging down to a metal 6 line)? (for the backside) 3. What risk, time and cost are involved in FIB operations? In this paper, we will present a new approach, which allows the FIB user or designer to calculate the optimal FIB operation for debug and IC repair. It automatically selects the fastest and easiest milling and deposition FIB operations.

Localization Techniques on a 0.15um CMOS Device: Charge Pump Failure Analysis

2002 ◽  
Author(s):  
Hui Pan ◽  
Thomas Gibson
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Charge Pump ◽  
Front Side ◽  
Pump Failure ◽  
Electrical Failure ◽  
Optical Proximity Correction ◽  
A Charge

Abstract In recent years, there have been many advances in the equipment and techniques used to isolate faults. There are many options available to the failure analyst. The available techniques fall into the categories of electrical, photonic, thermal and electron/ion beam [1]. Each technique has its advantages and its limitations. In this paper, we introduce a case of successful failure analysis using a combination of several fault localization techniques on a 0.15um CMOS device with seven layers of metal. It includes electrical failure mode characterization, front side photoemission, backside photoemission, Focused Ion Beam (FIB), Scanning Electron Microscope (SEM) and liquid crystal. Electrical characterization along with backside photoemission proved most useful in this case as a poly short problem was found to be causing a charge pump failure. A specific type of layout, often referred to as a hammerhead layout, and the use of Optical Proximity Correction (OPC) contributed to the poly level shorts.

Extending AFM Phase Image of Nanocomposite Structures to 3D using FIB

2012 ◽  
Vol 1421 ◽  
Author(s):  
Russell J. Bailey ◽  
Remco Geurts ◽  
Debbie J. Stokes ◽  
Frank de Jong ◽  
Asa H. Barber
Keyword(s):  
Phase Contrast ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polymer Nanocomposite ◽  
Three Dimensions ◽  
Phase Image ◽  
Force Microscopy ◽  
Atomic Force ◽  
Mechanical Information ◽  
Nanocomposite Structures

ABSTRACTThe mechanical behavior of nanocomposites is critically dependent on their structural composition. In this paper we use Focused Ion Beam (FIB) microscopy to prepare surfaces from a layered polymer nanocomposite for investigation using phase contrast atomic force microscopy (AFM). Phase contrast AFM provides mechanical information on the surface examined and, by combining with the sequential cross-sectioning of FIB, can extend the phase contract AFM into three dimensions.

3D Tomographic EBSD Measurements of Heavily Deformed Ultra Fine Grained Cu-0.17wt%Zr Obtained from ECAP

2008 ◽  
Vol 584-586 ◽  
pp. 434-439 ◽  
Author(s):  
Anahita Khorashadizadeh ◽  
Myrjam Winning ◽  
Dierk Raabe
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Three Dimensions ◽  
Polycrystalline Materials ◽  
Fine Grained ◽  
Orientation Microscopy ◽  
Angular Pressing ◽  
Dual Beam ◽  
Fine Grained Structure

Obtaining knowledge on the grain boundary topology in three dimensions is of great importance as it controls the mechanical properties of polycrystalline materials. In this study, the three dimensional texture and grain topology of as-deformed ultra fine grained Cu-0.17wt%Zr have been investigated using three-dimensional orientation microscopy (3D electron backscattering diffraction, EBSD) measurements in ultra fine grained Cu-0.17wt%Zr. Equal channel angular pressing was used to produce the ultra fine grained structure. The experiments were conducted using a dual-beam system for 3D-EBSD. The approach is realized by a combination of a focused ion beam (FIB) unit for serial sectioning with high-resolution field emission scanning electron microscopy equipped with EBSD. The work demonstrates that the new 3D EBSD-FIB technique provides a new level of microstructure information that cannot be achieved by conventional 2D-EBSD analysis.

scholarly journals From tissue retrieval to electron tomography: nanoscale characterization of the interface between bone and bioactive glass

2021 ◽  
Vol 18 (182) ◽  
pp. 20210181
Author(s):  
Chiara Micheletti ◽  
Pedro Henrique Silva Gomes-Ferreira ◽  
Travis Casagrande ◽  
Paulo Noronha Lisboa-Filho ◽  
Roberta Okamoto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Bioactive Glass ◽  
Focused Ion Beam ◽  
Electron Tomography ◽  
Ion Beam ◽  
Three Dimensions ◽  
Transmission Electron Microscopy Analysis ◽  
Dental Procedures ◽  
Transmission Electron

The success of biomaterials for bone regeneration relies on many factors, among which osseointegration plays a key role. Biogran (BG) is a bioactive glass commonly employed as a bone graft in dental procedures. Despite its use in clinical practice, the capability of BG to promote osseointegration has never been resolved at the nanoscale. In this paper, we present the workflow for characterizing the interface between newly formed bone and BG in a preclinical rat model. Areas of bone–BG contact were first identified by backscattered electron imaging in a scanning electron microscope. A focused ion beam in situ lift-out protocol was employed to prepare ultrathin samples for transmission electron microscopy analysis. The bone–BG gradual interface, i.e. the biointerphase, was visualized at the nanoscale with unprecedented resolution thanks to scanning transmission electron microscopy. Finally, we present a method to view the bone–BG interface in three dimensions using electron tomography.

scholarly journals Development of Advanced Biodevices Using Quantum Beam Microfabrication Technology

2020 ◽  
Vol 4 (1) ◽  
pp. 14 ◽  
Author(s):  
Tomoko G. Oyama ◽  
Atsushi Kimura ◽  
Naotsugu Nagasawa ◽  
Kotaro Oyama ◽  
Mitsumasa Taguchi
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Chemical Properties ◽  
Stem Cell Differentiation ◽  
Cell Aggregation ◽  
Three Dimensions ◽  
Gene Expression Control ◽  
Potential Applications ◽  
Microfabrication Technology

Biodevices with engineered micro- and nanostructures are strongly needed for advancements in medical technology such as regenerative medicine, drug discovery, diagnostic reagents, and drug delivery to secure high quality of life. The authors produced functional biocompatible plastics and hydrogels with physical and chemical properties and surface microscopic shapes that can be freely controlled in three dimensions during the production process using the superior properties of quantum beams. Nanostructures on a biocompatible poly(L-lactic acid) surface were fabricated using a focused ion beam. Soft hydrogels based on polysaccharides were micro-fabricated using a focused proton beam. Gelatin hydrogels were fabricated using γ-rays and electron beam, and their microstructures and stiffnesses were controlled for biological applications. HeLa cells proliferated three-dimensionally on the radiation-crosslinked gelatin hydrogels and, furthermore, their shapes can be controlled by the micro-fabricated surface of the hydrogel. Long-lasting hydrophilic concave structures were fabricated on the surface of silicone by radiation-induced crosslinking and oxidation. The demonstrated advanced biodevices have potential applications in three-dimensional cell culture, gene expression control, stem cell differentiation induction/suppression, cell aggregation into arbitrary shapes, tissue culture, and individual diagnosis in the medical field.

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