Advanced Failure Analysis of Junction Profile Defect by Using EBAC/EBIC

2015 ◽  
Author(s):  
Jong Hak Lee ◽  
Jae Yoon Lee ◽  
Dae Woo Kim ◽  
Kyoung Wook Jung ◽  
Soo Yong Son
Keyword(s):  
Technology Development ◽  
Semiconductor Device ◽  
Image Sensor ◽  
Process Technology ◽  
Root Cause ◽  
Analysis Phase ◽  
Analysis Technique ◽  
In Cis ◽  
Atomic Probe ◽  
Circuit Density

Abstract As semiconductor device geometries shrink due to process technology development and circuit density rapidly increases, it is becoming extremely difficult to effectively analyze defects. Against this background, more precise and efficient techniques to analyze the root cause of defects is in constant demand. This paper proposes a method to quickly and accurately identify the true cause of device failure by using a nano probe EBAC/EBIC analysis technique. The most significant benefit of the EBAC/EBIC analysis technique is the ability to identify normal or abnormal circuit behavior with an intuitive image. This benefit can minimize the damage to a sample during the initial analysis phase, which has been an issue in the analysis of existing physical properties of semiconductors. In this paper, we identified the root cause of a series transistor defect in CIS (CMOS Image Sensor) product by using EBAC/EBIC (analysis) technique, and verified this with the assistance of SSRM (Scanning Spreading Resistance Microscopy) and APT (Atomic Probe Tomography). By doing so, we confirmed that the analysis technique proposed in this paper is very effective in identifying and pinpointing the true cause and location of the defect.

In-Line Defects Overlaying with Functional Failures and Characterization for Fast Defect Learning and Fast Yield Improvement

2014 ◽  
Author(s):  
Zhigang Song ◽  
Oliver D. Patterson ◽  
Qian Xu
Keyword(s):  
Failure Analysis ◽  
Technology Development ◽  
Semiconductor Device ◽  
Development Stage ◽  
Line Defect ◽  
Defect Inspection ◽  
Yield Improvement ◽  
Root Cause ◽  
Manufacturing Yield ◽  
The Impact

Abstract Process defects, either random or systematic, are often the top killers of any semiconductor device. Process defect learning and reduction are the main focuses in both technology development stage and product manufacturing yield ramp stage. In order to achieve fast defect learning, in-line defect inspection is implemented in critical layers during wafer manufacturing. In-line defect inspection is able to detect defects. However, in-line defect inspection alone cannot predict the impact of defects on device functional yield. Failure analysis is an effective method of finding the defects which really cause device functional failures. However, often, the defects found by failure analysis are very different from the original defects, making it difficult to understand the root cause. This paper will describe a methodology how to combine in-line defect inspection and failure analysis together to found the top killer defects and accelerate their root cause identification for fast defect learning and yield improvement.

Interpreting Laser-Based Fault Localization Results: Case Studies

2019 ◽  
Author(s):  
Sukho Lee ◽  
John van den Biggelaar ◽  
Marc van Veenhuizen
Keyword(s):  
Case Studies ◽  
Circuit Design ◽  
High Sensitivity ◽  
Failure Behavior ◽  
Process Technology ◽  
Resistance Change ◽  
Voltage Imaging ◽  
Root Cause ◽  
First Case ◽  
Proper Interpretation

Abstract Laser-based dynamic analysis has become a very important tool for analyzing advanced process technology and complex circuit design. Thus, many good reference papers discuss high resolution, high sensitivity, and useful applications. However, proper interpretation of the measurement is important as well to understand the failure behavior and find the root cause. This paper demonstrates this importance by describing two insightful case studies with unique observations from laser voltage imaging/laser voltage probing (LVP), optical beam induced resistance change, and soft defect localization (SDL) analysis, which required an in-depth interpretation of the failure analysis (FA) results. The first case is a sawtooth LVP signal induced by a metal short. The second case, a mismatched result between an LVP and SDL analysis, is a good case of unusual LVP data induced by a very sensitive response to laser light. The two cases provide a good reference on how to properly explain FA results.

scholarly journals STRUKTUR DAN FUNGSI SOSIAL CERITA RAKYAT LEGENDA SYEKH KATIK SANGKO DI KELURAHAN PASIR KECAMATAN PARIAMAN TENGAH KOTA PARIAMAN

2019 ◽  
Vol 6 (3) ◽  
pp. 264
Author(s):  
Dina Silvia ◽  
Zulfadhli Zulfadhli
Keyword(s):  
Qualitative Research ◽  
Data Analysis ◽  
Data Classification ◽  
Social Function ◽  
Social Functions ◽  
The Third ◽  
Analysis Phase ◽  
Data Analysis Technique ◽  
Analysis Technique ◽  
The Social

This research aimed to (a) describe the structure of folklore legend of Syekh Katik Sangko in Pasir Subdistrict, central Pariaman District, Pariaman City. (b) describe the social function of folklore legend of Sheikh Katik Sangko in Pasir Village, Central Pariaman District, Pariaman City. The type of this research is qualitative research with descriptive methods. The data analysis technique was carried out through four steps. The first step was to carried out data inventory. The second was the data classification or analysis phase. The third step was a discussion and conclusion of the results of classification or data analysis. The last was reporting the research as thesis. The results of this study were found that in the folklore legend of Syekh Katik Sangko in Pasir Subdistrict, central Pariaman District, Pariaman City has 10 figures. The theme in this story is the spreading of Islam in Pariaman. Social functions found are means of education, inheritance and identity. Keywords: structure, social function, folklore

Progress on Ongoing Waste form HIP projects at ANSTO

MRS Advances ◽  
2018 ◽  
Vol 3 (20) ◽  
pp. 1059-1064 ◽  
Author(s):  
Eric R. Vance ◽  
Dorji T. Chavara ◽  
Daniel J. Gregg
Keyword(s):  
Spent Nuclear Fuel ◽  
Technology Development ◽  
Hot Isostatic Pressing ◽  
Waste Form ◽  
Process Technology ◽  
Ceramic Waste ◽  
Waste Forms ◽  
Produce Glass ◽  
Form Development ◽  
Year 2000

Abstract:Since the year 2000, Synroc has evolved from the titanate full-ceramic waste forms developed in the late 1970s to a hot isostatic pressing (HIP) technology platform that can be applied to produce glass, glass–ceramic, and ceramic waste forms and where there are distinct advantages over vitrification in terms of, for example, waste loading and suppressing volatile losses. This paper describes recent progress on waste form development for intermediate-level wastes from 99Mo production at ANSTO, spent nuclear fuel, fluoride pyroprocessing wastes and 129I. The microstructures and aqueous dissolution results are presented where applicable. This paper provides perspective on Synroc waste forms and recent process technology development in the nuclear waste management industry.

56.2: Embedded Fingerprint/Image Sensor Array Panel using a‐Si TFT photo‐sensor and Four‐Mask Halftone Process Technology

2019 ◽  
Vol 50 (S1) ◽  
pp. 613-616
Author(s):  
An-Thung Cho ◽  
Zhen Liu ◽  
Kai-jun Liu ◽  
Feng-yun Yang ◽  
Qiong-hua Mo ◽  
...  
Keyword(s):  
Sensor Array ◽  
Image Sensor ◽  
Process Technology ◽  
Fingerprint Image ◽  
Photo Sensor ◽  
Image Sensor Array

Submicron spaced lens array process technology for a high photosensitivity CCD image sensor

2002 ◽  
Author(s):  
Y. Sano ◽  
T. Nomura ◽  
H. Aoki ◽  
S. Terakawa ◽  
H. Kodama ◽  
...  
Keyword(s):  
Image Sensor ◽  
Process Technology ◽  
Lens Array ◽  
Ccd Image Sensor ◽  
Ccd Image ◽  
High Photosensitivity
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