The Effectiveness of OBIRCH Based Fault Isolation for Sub-90nm CMOS Technologies

2005 ◽  
Author(s):  
M. De la Bardonnie ◽  
L.F.Tz. Kwakman ◽  
K. Ly ◽  
R. Ross ◽  
F. Lorut ◽  
...  
Keyword(s):  
Signal To Noise Ratio ◽  
Pulsed Laser ◽  
Pulse Frequency ◽  
Fault Isolation ◽  
Resistance Change ◽  
Frequency Scan ◽  
Scan Speed ◽  
Set Up ◽  
Lock In ◽  
Higher Sensitivity

Abstract Even though failure analysis performed with a latest generation Phemos 2000 Optical Beam Induced Resistance Change (OBIRCH) tool has given excellent results for 120nm and 90nm technology developments, the limitations of tool and technique become apparent when used for the 65nm technology node and beyond. This article discusses the use of a pulsed laser in combination with a lock-in amplifier for OBIRCH-based fault isolation in latest generation CMOS devices. Using such set-up with appropriate settings for laser pulse frequency, scan speed, and phase shift off-set, a ten-fold signal-to-noise ratio gain is achieved. This improved S/N ratio allows detecting faulty circuitry with higher sensitivity and isolating faults that cannot be detected with the traditional OBIRCH set-up. Various case studies on latest technology devices are presented to illustrate the interest of adding the lock-in capability to the standard OBIRCH tool.

Application of Novel Low Current OBIRCH Amplifier and Nanoprobing to Identify Subtle Leakages in Advanced Node Technologies

2018 ◽  
Author(s):  
Satish Kodali ◽  
Liangshan Chen ◽  
Yuting Wei ◽  
Tanya Schaeffer ◽  
Chong Khiam Oh
Keyword(s):  
Signal To Noise Ratio ◽  
Semiconductor Industry ◽  
Fault Isolation ◽  
Ring Oscillator ◽  
High Signal ◽  
The Novel ◽  
Resistance Change ◽  
Three Samples ◽  
Relative Threshold ◽  
First Time

Abstract Optical beam induced resistance change (OBIRCH) is a very well-adapted technique for static fault isolation in the semiconductor industry. Novel low current OBIRCH amplifier is used to facilitate safe test condition requirements for advanced nodes. This paper shows the differences between the earlier and novel generation OBIRCH amplifiers. Ring oscillator high standby leakage samples are analyzed using the novel generation amplifier. High signal to noise ratio at applied low bias and current levels on device under test are shown on various samples. Further, a metric to demonstrate the SNR to device performance is also discussed. OBIRCH analysis is performed on all the three samples for nanoprobing of, and physical characterization on, the leakage. The resulting spots were calibrated and classified. It is noted that the calibration metric can be successfully used for the first time to estimate the relative threshold voltage of individual transistors in advanced process nodes.

Using Electrical Fault Isolation and Characterization to Improve the Effectiveness of Physical Fault Isolation Techniques for Analog Circuits

2017 ◽  
Author(s):  
Jim Douglass ◽  
Sohrab Pourmand
Keyword(s):  
Induced Resistance ◽  
Analog Circuits ◽  
Fault Isolation ◽  
Optical Beam ◽  
Resistance Change ◽  
Isolation Techniques ◽  
Isolation And Characterization ◽  
Lock In

Abstract This paper shows that by combining electrical fault isolation and characterization by microprobing with physical fault isolation techniques both what is wrong with the circuit and where the defect is located can be determined with less microprobing and more safety from electrical recovery. In the first example, the unit was powered up using the optical beam induced resistance change (OBIRCH) supply, and OBIRCH was performed to determine if there were OBIRCH site differences between the good part and the return. The second example uses a combination of electrical fault isolation and characterization with microprobing and the physical fault isolation tool of lock in thermography (LIT). With these two examples, it has been shown that the use of electrical fault isolation and microprobing can be used to enhance the physical fault isolation tools of OBIRCH and LIT.

Fault Localization of Power-Ground Short via Signal Injection and Oscilloscope Technique

2010 ◽  
Author(s):  
Binh Nguyen
Keyword(s):  
Low Cost ◽  
Short Circuit ◽  
Fault Localization ◽  
Fault Isolation ◽  
Test Apparatus ◽  
Good Working ◽  
Signal Injection ◽  
Set Up ◽  
Non Destructive ◽  
Short Circuit Condition

Abstract For those attempting fault isolation on computer motherboard power-ground short issues, the optimal technique should utilize existing test equipment available in the debug facility, requiring no specialty equipment as well as needing a minimum of training to use effectively. The test apparatus should be both easy to set up and easy to use. This article describes the signal injection and oscilloscope technique which meets the above requirements. The signal injection and oscilloscope technique is based on the application of Ohm's law in a short-circuit condition. Two experiments were conducted to prove the effectiveness of these techniques. Both experiments simulate a short-circuit condition on the VCC3 power rail of a good working PC motherboard and then apply the signal injection and oscilloscope technique to localize the short. The technique described is a simple, low cost and non-destructive method that helps to find the location of the power-ground short quickly and effectively.

Enhanced Detection Sensitivity with Pulsed Laser Digital Signal Integration Algorithm

2006 ◽  
Author(s):  
A.C.T. Quah ◽  
J.C.H. Phang ◽  
L.S. Koh ◽  
S.H. Tan ◽  
C.M. Chua
Keyword(s):  
Fault Localization ◽  
Pulsed Laser ◽  
Digital Signal ◽  
Detection Sensitivity ◽  
Signal Integration ◽  
Laser Operation ◽  
Frequency Range ◽  
Integration Algorithm ◽  
Detection Systems ◽  
Lock In

Abstract This paper describes a pulsed laser induced digital signal integration algorithm for pulsed laser operation that is compatible with existing ac-coupled and dc-coupled detection systems for fault localization. This algorithm enhances laser induced detection sensitivity without a lock-in amplifier. The best detection sensitivity is achieved at a pulsing frequency range between 500 Hz to 1.5 kHz. Within this frequency range, the algorithm is capable of achieving more than 9 times enhancement in detection sensitivity.

Application of Scan Based FA and Advanced Passive Voltage Contrast Technique in Defect Isolation

2003 ◽  
Author(s):  
Michael B. Schmidt ◽  
Noor Jehan Saujauddin
Keyword(s):  
Failure Analysis ◽  
Large Scale ◽  
Fault Isolation ◽  
Electronic Information ◽  
Scan Testing ◽  
Challenging Environment ◽  
Contrast Technique ◽  
Defect Isolation ◽  
Voltage Contrast ◽  
Higher Sensitivity

Abstract Scan testing and passive voltage contrast (PVC) techniques have been widely used as failure analysis fault isolation tools. Scan diagnosis can narrow a failure to a given net and passive voltage contrast can give real-time, large-scale electronic information about a sample at various stages of deprocessing. In the highly competitive and challenging environment of today, failure analysis cycle time is very important. By combining scan FA with a much higher sensitivity passive voltage contrast technique, one can quickly find defects that have traditionally posed a great challenge.

A Novel OBIRCH Fault Isolation Method to Locate the Leakage Failure Point

2008 ◽  
Author(s):  
Chi-Lin Huang ◽  
Yu Hsiang Shu
Keyword(s):  
Semiconductor Device ◽  
Fault Isolation ◽  
Resistance Change ◽  
Cross Sectional ◽  
Isolation Technique ◽  
Isolation Techniques ◽  
Atomic Force ◽  
Analysis Experiment ◽  
Failure Point ◽  
Leakage Failure

Abstract Conventional isolation techniques, such as Optical Beam Induced Resistance Change (OBIRCH) or photoemission microscopy (PEM) frequently fail to locate failure points when only applied to power pin of the semiconductor device. In this paper, a novel OBIRCH failure isolation technique is utilized to detect leakage failures. Different test conditions are presented to identify the differences in current when all input pins are pulled high in an OBIRCH system. In order to verify a failure point, it is necessary to perform electrical analysis of the suspected failure point in the failing sample. In general, Conductive Atomic Force Microscope (C-AFM) and a Nano-Prober is sufficient to provide the electrical data required for failure analysis. Experiment results, however, prove that this novel OBIRCH failure isolation technique is effective in locating the failure point, especially for leakage failures. The failure mechanism is illustrated using cross-sectional TEM.

Fault Isolation of High Resistance Defects Using Comparative Magnetic Field Imaging

2003 ◽  
Author(s):  
Antonio Orozco ◽  
Elena Talanova ◽  
Anders Gilbertson ◽  
L.A. Knauss ◽  
Zhiyong Wang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
High Resistance ◽  
Integrated Circuit ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Main Stream ◽  
Layer By Layer ◽  
Impedance Change ◽  
Resistance Change ◽  
Require Time

Abstract As integrated circuit packages become more complicated, the localization of defects becomes correspondingly more difficult. One particularly difficult class of defects to localize is high resistance (HR) defects. These defects include cracked traces, delaminated vias, C4 non-wet defects, PTH cracks, and any other package or interconnect structure that results in a signal line resistance change that exceeds the specification of the device. These defects can result in devices that do not run at full speed, are not reliable in the field, or simply do not work at all. The main approach for localizing these defects today is time domain reflectometry (TDR) [1]. TDR sends a short electrical pulse into the device and monitors the time to receive reflections. These reflections can correspond to shorts, opens, bends in a wire, normal interfaces between devices, or high resistance defects. Ultimately anything that produces an electrical impedance change will produce a TDR response. These signals are compared to a good part and require time consuming layer-by-layer deprocessing and comparison to a standard part. When complete, the localization is typically at best to within 200 microns. A new approach to isolating high resistance defects has been recently developed using current imaging. In recent years, current imaging through magnetic field detection has become a main-stream approach for short localization in the package [2] and is also heavily utilized for die level applications [3]. This core technology has been applied to the localization of high resistance defects. This paper will describe the approach, and give examples of test samples as well as results from actual yield failures.

scholarly journals A large area diamond-based beam tagging hodoscope for ion therapy monitoring

2018 ◽  
Vol 170 ◽  
pp. 09005 ◽  
Author(s):  
M.-L. Gallin-Martel ◽  
L. Abbassi ◽  
A. Bes ◽  
G. Bosson ◽  
J. Collot ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
Signal To Noise Ratio ◽  
Therapy Monitoring ◽  
Chemical Vapor ◽  
X Rays ◽  
Reaction Products ◽  
Large Area ◽  
Position Measurement ◽  
Set Up ◽  
Good Signal

The MoniDiam project is part of the French national collaboration CLaRyS (Contrôle en Ligne de l’hAdronthérapie par RaYonnements Secondaires) for on-line monitoring of hadron therapy. It relies on the imaging of nuclear reaction products that is related to the ion range. The goal here is to provide large area beam detectors with a high detection efficiency for carbon or proton beams giving time and position measurement at 100 MHz count rates (beam tagging hodoscope). High radiation hardness and intrinsic electronic properties make diamonds reliable and very fast detectors with a good signal to noise ratio. Commercial Chemical Vapor Deposited (CVD) poly-crystalline, heteroepitaxial and monocrystalline diamonds were studied. Their applicability as a particle detector was investigated using α and β radioactive sources, 95 MeV/u carbon ion beams at GANIL and 8.5 keV X-ray photon bunches from ESRF. This facility offers the unique capability of providing a focused (~1 μm) beam in bunches of 100 ps duration, with an almost uniform energy deposition in the irradiated detector volume, therefore mimicking the interaction of single ions. A signal rise time resolution ranging from 20 to 90 ps rms and an energy resolution of 7 to 9% were measured using diamonds with aluminum disk shaped surface metallization. This enabled us to conclude that polycrystalline CVD diamond detectors are good candidates for our beam tagging hodoscope development. Recently, double-side stripped metallized diamonds were tested using the XBIC (X Rays Beam Induced Current) set-up of the ID21 beamline at ESRF which permits us to evaluate the capability of diamond to be used as position sensitive detector. The final detector will consist in a mosaic arrangement of double-side stripped diamond sensors read out by a dedicated fast-integrated electronics of several hundreds of channels.

scholarly journals Influence of pulse frequency on synthesis of nano and submicrometer spherical particles by pulsed laser melting in liquid

2018 ◽  
Vol 435 ◽  
pp. 529-534 ◽  
Author(s):  
Shota Sakaki ◽  
Hiroshi Ikenoue ◽  
Takeshi Tsuji ◽  
Yoshie Ishikawa ◽  
Naoto Koshizaki
Keyword(s):  
Pulsed Laser ◽  
Pulse Frequency ◽  
Spherical Particles ◽  
Laser Melting

scholarly journals Now you see it, now you don't: optimal parameters for interslice stimulation in concurrent TMS-fMRI

2021 ◽  
Author(s):  
Catriona L Scrivener ◽  
Jade B Jackson ◽  
Marta Morgado Correia ◽  
Marius Mada ◽  
Alexandra Woolgar
Keyword(s):  
Single Channel ◽  
Signal To Noise Ratio ◽  
Brain Activity ◽  
Surface Coil ◽  
Acquisition Time ◽  
Surface Coils ◽  
Human Participant ◽  
Set Up ◽  
Promising Avenue ◽  
Slice Acquisition

The powerful combination of transcranial magnetic stimulation (TMS) concurrent with functional magnetic resonance imaging (fMRI) provides rare insights into the causal relationships between brain activity and behaviour. Despite a recent resurgence in popularity, TMS-fMRI remains technically challenging. Here we examined the feasibility of applying TMS during short gaps between fMRI slices to avoid incurring artefacts in the fMRI data. We quantified signal dropout and changes in temporal signal-to-noise ratio (tSNR) for TMS pulses presented at timepoints from 100ms before to 100ms after slice onset. Up to 3 pulses were delivered per volume using MagVenture's MR-compatible TMS coil. We used a spherical phantom, two 7-channel TMS-dedicated surface coils, and a multiband (MB) sequence (factor=2) with interslice gaps of 100ms and 40ms, on a Siemens 3T Prisma-fit scanner. For comparison we repeated a subset of parameters with a more standard single-channel TxRx (birdcage) coil, and with a human participant and surface coil set up. We found that, even at 100% stimulator output, pulses applied at least -40ms/+50ms from the onset of slice readout avoid incurring artifacts. This was the case for all three setups. Thus, an interslice protocol can be achieved with a frequency of up to ~10 Hz, using a standard EPI sequence (slice acquisition time: 62.5ms, interslice gap: 40ms). Faster stimulation frequencies would require shorter slice acquisition times, for example using in-plane acceleration. Interslice TMS-fMRI protocols provide a promising avenue for retaining flexible timing of stimulus delivery without incurring TMS artifacts.

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