scholarly journals The Effect of Wafer Edge Cu Contamination on FinFET Devices

2021 ◽  
Author(s):  
Yong Guo ◽  
Jason Jones ◽  
Yanan Guo ◽  
Jeff Hurst ◽  
Jinyoung Lee ◽  
...  
Keyword(s):  
Si Substrate ◽  
Tem Analysis ◽  
Isolation Layer ◽  
Layer Deposition ◽  
Cu Contamination ◽  
Edge Surface ◽  
Sims Analysis ◽  
Effect Of Copper ◽  
The Impact ◽  
Wafer Edge

Abstract The effect of copper (Cu) contamination inside the Si substrate from the wafer edge to the nearby devices has been investigated. After the Cu seed layer deposition, Cu contacted directly with Si at wafer edge where dielectric isolation layer was removed. Under the routine BEOL metallization and after the capping SiON/Si2O layers, SEM and AES analysis located a strip of islets of Cu contaminants. TEM analysis revealed that the seed Cu had interacted with Si substrate to form a stable ?-Cu3Si intermetallic compound that appeared to be planted into the Si substrate at the surface. SIMS analysis from the wafer backside, opposite to this strip of ?-Cu3Si islets at front, showed no Cu detection even after the majority of the backside Si was removed by grinding. Electrical nano-probing did not discern any parametric drift for the nanometer FinFET devices on chips near the edge surface of massive ?-Cu3Si islets in comparison with a reference chip from an uncontaminated wafer center. These results indicate that the formation of ?-Cu3Si, with a well-defined crystalline structure and a relatively stable stoichiometry, immobilizes Cu diffusion inside the Si substrate. In other word, the impact of Cu diffusion in Si has no effect on device performances as long as ?-Cu3Si is not directly formed in the FinFET channel or presents to short any structures within the chip.

3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.

2008 ◽  
Vol 600-603 ◽  
pp. 243-246 ◽  
Author(s):  
Ruggero Anzalone ◽  
Andrea Severino ◽  
Giuseppe D'Arrigo ◽  
Corrado Bongiorno ◽  
Patrick Fiorenza ◽  
...  
Keyword(s):  
Growth Process ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Tem Analysis ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
The Impact

The aim of this work is to improve the heteroepitaxial growth process of 3C-SiC on Si substrates using Trichlorosilane (SiHCl3) as the silicon growth precursor. With this precursor it has been shown that it is possible to simultaneously increase the growth rate of the process and avoid the nucleation of silicon droplets in the gas phase. Growth experiments were conducted on three (3) Si substrate orientations in order to assess the impact of the Si substrate on the resulting 3C-SiC film. X-ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) analysis show the important role of the substrate orientation for the growth process. The different orientation of the substrate modifies the morphology of the 3C-SiC crystalline structure, mostly by changing the density of micro-twins and stacking faults inside the film.

scholarly journals Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jun Yin ◽  
Lian Liu ◽  
Yashu Zang ◽  
Anni Ying ◽  
Wenjie Hui ◽  
...  
Keyword(s):  
High Performance ◽  
Impact Ionization ◽  
Low Cost ◽  
Atomic Layer ◽  
Light Illumination ◽  
Insulation Material ◽  
Defect States ◽  
Uv Illumination ◽  
Layer Deposition ◽  
The Impact

AbstractHere, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.

Backside Exposure of Small-Sized TSVs Using Si/Cu Grinding, CMP, Cap Layer Deposition, and Alkaline Etching

2014 ◽  
Vol 2014 (1) ◽  
pp. 000019-000023 ◽  
Author(s):  
Naoya Watanabe ◽  
Masahiro Aoyagi ◽  
Daisuke Katagawa ◽  
Tsubasa Bandoh ◽  
Eiichi Yamamoto
Keyword(s):  
Chemical Mechanical Polishing ◽  
Grinding Wheel ◽  
Alkaline Etching ◽  
Layer Deposition ◽  
New Process ◽  
Cu Contamination ◽  
Cap Layer ◽  
Vitrified Bond ◽  
Silicon Vias

For backside exposure of through-silicon vias (TSVs), we developed a new process using Si/Cu grinding, chemical mechanical polishing (CMP), cap layer deposition, and alkaline etching of Si. In this process, Si/Cu grinding without Cu burning or smearing was performed by using a novel grinding wheel (vitrified-bond type), with in situ cleaning of the grinding wheel by a high-pressure micro jet. CMP was then performed to remove grinding scratches generated by Si/Cu grinding. Next, slight Cu contamination in the Si region between TSVs was decreased by cap layer deposition and alkaline etching of Si. The cap layer was Ni-B film formed by electroless plating. We also applied the developed process to backside exposure of 4-μm-diameter TSVs. As a result, TSVs were exposed uniformly without grinding scratches and Cu contamination in Si region between TSVs was suppressed to < 2.7×1010 atoms/cm2.

scholarly journals Effect of CeO2-ZnO Nanocomposite for Photocatalytic and Antibacterial Activities

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 817
Author(s):  
Asad Syed ◽  
Lakshmi Sagar Reddy Yadav ◽  
Ali H. Bahkali ◽  
Abdallah M. Elgorban ◽  
Deshmukh Abdul Hakeem ◽  
...  
Keyword(s):  
Surface Defects ◽  
Uv Light ◽  
Antibacterial Properties ◽  
Combustion Method ◽  
Antibacterial Activities ◽  
Cubic Phase ◽  
Solution Combustion ◽  
Tem Analysis ◽  
Bet Specific Surface Area ◽  
The Impact

The impact of a CeO2-ZnO nanocomposite on the photocatalytic and antibacterial properties compared to bare ZnO was investigated. A CeO2-ZnO nanocomposite was synthesized using Acacia nilotica fruit extract as a novel fuel by a simple solution combustion method. The obtained CeO2-ZnO nanocomposite was confirmed structurally by XRD, FTIR, Raman and UV-DRS and morphologically by SEM/TEM analysis. The XRD pattern indicates the presence of both hexagonal Wurtzite-structured ZnO (major) and cubic-phase CeO2 (minor). FTIR shows the presence of a Ce-O-Ce vibration at 468 cm−1 and Zn-O vibration at 445 cm−1. The existence of a band at 460 cm−1 confirmed the F2g Raman-active mode of the fluorite cubic crystalline structure for CeO2. Diffused reflectance spectroscopy was used to estimate the bandgap (Eg) from Kubelka–Munk (K–M) theory which was found to be 3.4 eV. TEM analysis shows almost spherical-shaped particles, at a size of about 10–15 nm. The CeO2-ZnO nanocomposite shows a good BET specific surface area of 30 m2g−1. The surface defects and porosity of the CeO2-ZnO nanocomposite caused methylene blue (MB) dye to degrade under sunlight (88%) and UV light (92%). The CeO2-ZnO nanocomposite also exhibited considerable antibacterial activity against a pathogenic bacterial strain.

Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

2015 ◽  
Vol 51 (86) ◽  
pp. 15692-15695 ◽  
Author(s):  
A. Delabie ◽  
M. Caymax ◽  
B. Groven ◽  
M. Heyne ◽  
K. Haesevoets ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Reducing Agents ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
The Impact

We demonstrate the impact of reducing agents for Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) of WS2 from WF6 and H2S precursors.

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