scholarly journals Exploring the Thickness-Dependence of the Properties of Layered Gallium Sulfide

2021 ◽  
Vol 9 ◽  
Author(s):  
Yael Gutiérrez ◽  
Maria M. Giangregorio ◽  
Stefano Dicorato ◽  
Fabio Palumbo ◽  
Maria Losurdo

Group III layered monochalcogenide gallium sulfide, GaS, is one of the latest additions to the two-dimensional (2D) materials family, and of particular interest for visible-UV optoelectronic applications due to its wide bandgap energy in the range 2.35–3.05 eV going from bulk to monolayer. Interestingly, when going to the few-layer regime, changes in the electronic structure occur, resulting in a change in the properties of the material. Therefore, a systematic study on the thickness dependence of the different properties of GaS is needed. Here, we analyze mechanically exfoliated GaS layers transferred to glass substrates. Specifically, we report the dependence of the Raman spectra, photoluminescence, optical transmittance, resistivity, and work function on the thickness of GaS. Those findings can be used as guidance in designing devices based on GaS.

2019 ◽  
Vol 26 (01) ◽  
pp. 1850134 ◽  
Author(s):  
CHERIFA DALACHE ◽  
HADJ BENHEBAL ◽  
BEDHIAF BENRABAH ◽  
AEK AMMARI ◽  
ABDELMALEK KHARROUBI ◽  
...  

This paper contains the results of the structural and spectroscopic characterizations of undoped and Cadmium-doped cobalt oxide thin films with different Co/Cd molar ratios (3%, 5%, 7% and 9%). The nanosized undoped and cadmium-doped Co3O4 thin layers were prepared using sol–gel process and deposited on glass substrates by dip coating. The changes caused by the incorporation of cadmium at different levels of doping have been highlighted by the techniques UV–Visible (UV–Vis) spectroscopy, Infrared (IR) spectroscopy, X-ray diffraction (XRD) measurements, SEM coupled EDX and impedance spectroscopy. From the UV–Vis spectroscopy analysis, it was found that all the films are two direct bandgap energies. The optical transmittance and the bandgap energy decrease with increase in Cd concentration. The XRD spectra confirm the films were polycrystalline with a cubic spinel structure. The results of the impedance spectroscopy show that the equivalent circuit of the synthesized samples is an RC parallel circuit.


Author(s):  
JuTao Zhang ◽  
Ying Liang ◽  
Hao Guo ◽  
Tian C Zhang ◽  
Haidong Fan ◽  
...  

Vacancy defects are inevitable when synthesizing two-dimensional (2D) materials, and vacancy defects greatly affect the physical properties, such as magnetism and electronic properties. Currently, sufficient information is not available on...


Author(s):  
Vipin Kumar ◽  
Aditya Dey ◽  
Siby Thomas ◽  
Mohsen Asle Zaeem ◽  
Debesh R. Roy

Most of the known two-dimensional materials lack a suitable wide-bandgap, and hydrogenation can be effectively utilized to tune the bandgap of some 2D materials.


2019 ◽  
Vol 27 (07) ◽  
pp. 1950174
Author(s):  
FATIMA ZOHRA BOUCHAREB ◽  
NASR-EDDINE HAMDADOU

In this work, we have examined the effect of annealing temperature on Cu-doped Bi2O3 thin films at 1%, 3% and 5% doping rate successfully prepared by spray pyrolysis technique onto glass substrates. The obtained films were subsequently annealed at different temperature for 4[Formula: see text]h. GIXRD analysis reveals the polycrystalline nature of deposited films and shows the formation of mixed [Formula: see text]- and [Formula: see text]-Bi2O3 phases. With the increase of doping rate, [Formula: see text]-phase of Bi2O3 was identified at medium temperature. The average grain size of thin films at different doping rate of Cu decreases with the increase of annealing temperature. The optical characterization shows that the optical transmittance of the films decreases with the increase of annealing temperature in the range (70–50%) and (40–10%) for 1% and 5% doping rate of Cu, respectively. The evaluation of the optical bandgap energy reveals that the indirect transition is controlling the optical response of the films. The optimum annealing temperature to reduce Bi2O3 energy bandgap to be 3.09[Formula: see text]eV, is 450∘C and 550∘C for 3% and 5% doping rate of Cu.


2019 ◽  
Vol 7 (48) ◽  
pp. 27441-27449 ◽  
Author(s):  
Xiaoyong Yang ◽  
Amitava Banerjee ◽  
Zhitong Xu ◽  
Ziwei Wang ◽  
Rajeev Ahuja

Two-dimensional (2D) materials, group III2–VI3 compounds have drawn intense attention due to its excellent surface properties.


Author(s):  
Pan Wang ◽  
Yixin Zong ◽  
Hao Liu ◽  
Hongyu Wen ◽  
Hai-Bin Wu ◽  
...  

Recently, Janus two-dimensional (2D) materials have received considerable interest due to their intrinsic vertical dipole and hence have great potential in photocatalytic and piezoelectric applications. Here, a new series of...


2017 ◽  
Author(s):  
Varun Bheemireddy

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>


2021 ◽  
Vol 16 ◽  
Author(s):  
Joice Sophia Ponraj ◽  
Muniraj Vignesh Narayanan ◽  
Ranjith Kumar Dharman ◽  
Valanarasu Santiyagu ◽  
Ramalingam Gopal ◽  
...  

: Increasing energy crisis across the globe requires immediate solutions. Two-dimensional (2D) materials are in great significance because of its application in energy storage and conversion devices but the production process significantly impacts the environment thereby posing a severe problem in the field of pollution control. Green synthesis method provides an eminent way of reduction in pollutants. This article reviews the importance of green synthesis in the energy application sector. The focus of 2D materials like graphene, MoS2, VS2 in energy storage and conversion devices are emphasized based on supporting recent reports. The emerging Li-ion batteries are widely reviewed along with their promising alternatives like Zn, Na, Mg batteries and are featured in detail. The impact of green methods in the energy application field are outlined. Moreover, future outlook in the energy sector is envisioned by proposing an increase in 2D elemental materials research.


Author(s):  
Xiaoqiu Guo ◽  
Ruixin Yu ◽  
Jingwen Jiang ◽  
Zhuang Ma ◽  
Xiuwen Zhang

Topological insulation is widely predicted in two-dimensional (2D) materials realized by epitaxial growth or van der Waals (vdW) exfoliation. Such 2D topological insulators (TI’s) host many interesting physical properties such...


Author(s):  
Sai Manoj Gali ◽  
David Beljonne

Transition Metal Dichalcogenides (TMDCs) are emerging as promising two-dimensional (2D) materials. Yet, TMDCs are prone to inherent defects such as chalcogen vacancies, which are detrimental to charge transport. Passivation of...


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