scholarly journals Influence of AlN and GaN Pulse Ratios in Thermal Atomic Layer Deposited AlGaN on the Electrical Properties of AlGaN/GaN Schottky Diodes

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 489 ◽  
Author(s):  
Hogyoung Kim ◽  
Seok Choi ◽  
Byung Joon Choi
Keyword(s):  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Charge Trapping ◽  
Negative Temperature ◽  
Atomic Layer ◽  
Algan Layer ◽  
Pulse Ratio ◽  
Current Voltage ◽  
Frenkel Emission ◽  
A Charge

Atomic layer deposited AlGaN with different AlN and GaN pulse ratios (2:1, 1:1, and 1:2) was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms were investigated using current–voltage (I–V) and capacitance–voltage (C–V) measurements. Under low reverse bias condition, the sample with the pulse ratio of 2:1 was explained by Poole–Frenkel emission and the negative temperature dependence for the sample with the pulse ratio of 1:2 was associated with the acceptor levels in the AlGaN layer. Fast interface traps at 0.24–0.29 eV were observed for the samples with the pulse ratios of 1:1 and 1:2, whereas bulk traps at ~0.34 eV were observed for the sample with the pulse ratio of 2:1. Higher trap densities were obtained from the C–V hysteresis measurements when the pulse ratios were 1:1 and 1:2, indicating the presence of a charge trapping interfacial layer. According to the X-ray photoelectron spectroscopy spectra, the pulse ratio of 2:1 was found to have less oxygen-related defects in the AlGaN layer.

A study of Al2O3:C films on Si(100) grown by low pressure MOCVD

2002 ◽  
Vol 747 ◽  
Author(s):  
M. P. Singh ◽  
C. S. Thakur ◽  
N. Bhat ◽  
S. A. Shivashankar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
High Frequency ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
X Ray ◽  
Transmission Electron ◽  
Current Voltage ◽  
Low Pressure Mocvd

ABSTRACTWe report the characterization of carbonaceous aluminium oxide, Al2O3:C, films grown on Si(100) by metalorganic chemical vapor deposition. The focus is on the study of the effects of carbon on the dielectric properties of aluminium oxide in a qualitative manner. The carbon present in the aluminium oxide film derives from aluminium acetylacetonate used as the source of aluminium. As-grown films comprise nanometer-sized grains of alumina (∼ 20–50 nm) in an amorphous carbonaceous matrix, as examined by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films are shiny; they are smooth as observed by scanning electron microscopy (SEM). An attempt has been made to explore the defects (viz., oxide charge density) in the aluminium oxide films using room temperature high frequency capacitance – voltage (C-V) and current–voltage (I-V) measurements. The hysteresis and stretch-out in the high frequency C-V plots is indicative of charge trapping. The role of heteroatoms, as characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy, in the transport of charge in Al2O3:C films is discussed.

THE CURRENT–VOLTAGE CHARACTERISTICS OVER THE MEASUREMENT TEMPERATURE OF 60–400 K IN THE Au/Ti/n-GaAs CONTACTS WITH HIGH DIELECTRIC HfO2 INTERFACIAL LAYER

2019 ◽  
Vol 26 (08) ◽  
pp. 1950045 ◽  
Author(s):  
ABDULKERIM KARABULUT ◽  
IKRAM ORAK ◽  
MUJDAT CAGLAR ◽  
ABDULMECIT TURUT
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Temperature Dependent ◽  
Mos Capacitor ◽  
Gaas Wafer ◽  
Layer Deposition ◽  
Current Voltage ◽  
High Dielectric

The Au/Ti/HfO2/[Formula: see text]-GaAs metal/insulating layer/semiconductor structures have been fabricated using standard thermal atomic layer deposition. We experimentally showed whether or not the HfO2 interfacial layer grown on the [Formula: see text]-GaAs wafer modifies the barrier height (BH) of the device at the room temperature. Besides, we investigated the measurement based on temperature dependence of the device parameters from the current–voltage ([Formula: see text]–[Formula: see text]) characteristics of the diode in 60–400[Formula: see text]K range with steps of 10[Formula: see text]K. The X-ray photoelectron spectroscopy (XPS) have been carried out to characterize the surfaces of both [Formula: see text]-GaAs wafer and HfO2 thin films. The series resistance value from the temperature-dependent [Formula: see text]–[Formula: see text] characteristics decreased with decreasing temperature, which is a desired positive result for the devices developed from the MOS capacitor. The BH value of 0.94[Formula: see text]eV (300[Formula: see text]K) has been obtained for the device with the HfO2 layer which is a higher value than the value of 0.77[Formula: see text]eV (300[Formula: see text]K) of the device without HfO2 layer. Therefore, we can say that the HfO2 thin layer at the metal/GaAs interface can also be used for the BH modification as a gate insulator for GaAs MOS capacitor and MOSFETs. When the temperature-dependent [Formula: see text]–[Formula: see text] characteristics at low temperatures have been considered, it has been observed that the current prefers to flow through the lowest BHs due to the BH inhomogeneities.

Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations

2011 ◽  
Vol 679-680 ◽  
pp. 453-456
Author(s):  
Denis Perrone ◽  
Sergio Ferrero ◽  
Luciano Scaltrito ◽  
Marco Naretto ◽  
Edvige Celasco ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Structural Evolution ◽  
Schottky Contacts ◽  
Power Losses ◽  
X Ray ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Power Densities

In this work we studied different Schottky contacts to 4H-SiC with the aim to obtain Schottky Barrier diodes (SBDs) and Junction Barrier Schottky diodes (JBS) able to operate at high temperatures, frequencies and power densities with low power losses. Schottky contacts were fabricated using Mo and Mo/Al layers annealed up to 600 °C using a Rapid Thermal Process (RTP). A comparison with previous results obtained with Ni, Ti and Ti/Al layers annealed up to 400 °C is also proposed. The Schottky contacts were characterized by means of standard Current-Voltage (I-V) and Capacitance-Voltage (C-V) techniques. X-ray Photoelectron Spectroscopy (XPS) analyses were performed in depth profile mode in order to study the structural evolution of the interface Mo/SiC and Al/Mo during annealing treatments. Mo/Al contacts show a lower barrier height and better overall performances in forward polarization when compared to the Ti- and Ni-based contacts, and they are very promising for Schottky contact fabrication on SBD and JBS.

A study of Al2O3:C films on Si(100) grown by low pressure MOCVD

2002 ◽  
Vol 745 ◽  
Author(s):  
M. P. Singh ◽  
C. S. Thakur ◽  
N. Bhat ◽  
S. A. Shivashankar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
High Frequency ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
X Ray ◽  
Transmission Electron ◽  
Current Voltage ◽  
Low Pressure Mocvd

ABSTRACTWe report the characterization of carbonaceous aluminium oxide, Al2O3:C, films grown on Si(100) by metalorganic chemical vapor deposition. The focus is on the study of the effects of carbon on the dielectric properties of aluminium oxide in a qualitative manner. The carbon present in the aluminium oxide film derives from aluminium acetylacetonate used as the source of aluminium. As-grown films comprise nanometer-sized grains of alumina (∼ 20–50 nm) in an amorphous carbonaceous matrix, as examined by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films are shiny; they are smooth as observed by scanning electron microscopy (SEM). An attempt has been made to explore the defects (viz., oxide charge density) in the aluminium oxide films using room temperature high frequency capacitance – voltage (C-V) and current–voltage (I-V) measurements. The hysteresis and stretch-out in the high frequency C-V plots is indicative of charge trapping. The role of heteroatoms, as characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy, in the transport of charge in Al2O3:C films is discussed.

scholarly journals I-VCharacteristics of PtxCo1−x(x= 0.2, 0.5, and 0.7) Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-6
Author(s):  
M. Erkovan ◽  
E. Şentürk ◽  
Y. Şahin ◽  
M. Okutan
Keyword(s):  
Thin Films ◽  
Barrier Height ◽  
Ideality Factor ◽  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Native Oxide ◽  
Analysis Technique ◽  
Current Voltage ◽  
P Type

Three different chemical ratios of PtxCo1−xthin films were grown on p-type native oxide Si (100) by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V) measurements of metal-semiconductor (MS) Schottky diodes were carried out at room temperature. From theI-Vanalysis of the samples, ideality factor (n), barrier height (ϕ), and contact resistance values were determined by using thermionic emission (TE) theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from theI-Vcharacteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.

scholarly journals Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 268
Author(s):  
Il-Hwan Hwang ◽  
Ho-Young Cha ◽  
Kwang-Seok Seo
Keyword(s):  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Atomic Layer ◽  
Etching Process ◽  
Etching Depth ◽  
Self Bias ◽  
Number Of Cycles ◽  
Etched Surface ◽  
Gan Etching ◽  
Atomic Layer Etching

This paper reports on the use of low-damage atomic layer etching (ALE) performed using O2 and BCl3 plasma for etching (Al)GaN. The proposed ALE process led to excellent self-limiting etch characteristics with a low direct current (DC) self-bias, which resulted in a high linearity between the etching depth and number of cycles. The etching damage was evaluated using several methods, including atomic force microscopy, photoluminescence (PL), and X-ray photoelectron spectroscopy, and the I–V properties of the recessed Schottky diodes were compared with those of digital etching performed using O2 plasma and HCl solution. The electrical characteristics of the recessed Schottky diode fabricated using the proposed ALE process were superior to those of the diodes fabricated using the conventional digital etching process. Moreover, the ALE process yielded a higher PL intensity and N/(Al + Ga) ratio of the etched AlGaN surface, along with a smoother etched surface.

A comparative study of charge trapping effect in p-type MoTe2 and WSe2 FETs using pulsed current–voltage measurements

2021 ◽  
Vol 60 (1) ◽  
pp. 011003
Author(s):  
Jeong Yong Yang ◽  
Chan Ho Lee ◽  
Young Taek Oh ◽  
Jiyeon Ma ◽  
Junseok Heo ◽  
...  
Keyword(s):  
Comparative Study ◽  
Charge Trapping ◽  
Pulsed Current ◽  
Trapping Effect ◽  
Current Voltage ◽  
P Type

scholarly journals Interface Structures and Electronic States of Epitaxial Tetraazanaphthacene on Single-Crystal Pentacene

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1088
Author(s):  
Yuki Gunjo ◽  
Hajime Kamebuchi ◽  
Ryohei Tsuruta ◽  
Masaki Iwashita ◽  
Kana Takahashi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Grazing Incidence ◽  
Force Microscopy ◽  
Interface Dipole ◽  
Atomic Force ◽  
Interfacial Structures ◽  
Donor And Acceptor ◽  
A Charge ◽  
Interface Structures

The structural and electronic properties of interfaces composed of donor and acceptor molecules play important roles in the development of organic opto-electronic devices. Epitaxial growth of organic semiconductor molecules offers a possibility to control the interfacial structures and to explore precise properties at the intermolecular contacts. 5,6,11,12-tetraazanaphthacene (TANC) is an acceptor molecule with a molecular structure similar to that of pentacene, a representative donor material, and thus, good compatibility with pentacene is expected. In this study, the physicochemical properties of the molecular interface between TANC and pentacene single crystal (PnSC) substrates were analyzed by atomic force microscopy, grazing-incidence X-ray diffraction (GIXD), and photoelectron spectroscopy. GIXD revealed that TANC molecules assemble into epitaxial overlayers of the (010) oriented crystallites by aligning an axis where the side edges of the molecules face each other along the [1¯10] direction of the PnSC. No apparent interface dipole was found, and the energy level offset between the highest occupied molecular orbitals of TANC and the PnSC was determined to be 1.75 eV, which led to a charge transfer gap width of 0.7 eV at the interface.

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