scholarly journals The Effect of RF Sputtering Temperature Conditions on the Structural and Physical Properties of Grown SbGaN Thin Film

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 752
Author(s):  
Cao Phuong Thao ◽  
Dong-Hau Kuo ◽  
Thi Tran Anh Tuan
Keyword(s):  
Structural Characteristics ◽  
Hole Concentration ◽  
Rf Sputtering ◽  
Testing Temperature ◽  
Bandgap Energy ◽  
Electrical Mobility ◽  
Temperature Conditions ◽  
Different Temperatures ◽  
P Type ◽  
Quartz Substrates

By using a single ceramic SbGaN target containing a 14% Sb dopant, Sb0.14GaN films were successfully grown on n-Si(100), SiO2/Si(100), and quartz substrates by an RF reactive sputtering technology at different growth temperatures, ranging from 100 to 400 °C. As a result, the structural characteristics, and optical and electrical properties of the deposited Sb0.14GaN films were affected by the various substrate temperature conditions. By heating the temperature deposition differently, the sputtered Sb0.14GaN films had a wurtzite crystal structure with a preferential (101¯0) plane, and these Sb0.14GaN films experienced a structural distortion and exhibited p-type layers. At the highest depositing temperature of 400 °C, the Sb0.14GaN film had the smallest bandgap energy of 2.78 eV, and the highest hole concentration of 8.97 × 1016 cm−3, a conductivity of 2.1 Scm−1, and a high electrical mobility of 146 cm2V−1s−1. The p-Sb0.14GaN/n-Si heterojunction diode was tested at different temperatures, ranging from 25 to 150 °C. The testing data showed that the change of testing temperature affected the electrical characteristics of the diode.

scholarly journals Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1435
Author(s):  
Kaneez Fatima ◽  
Hadia Noor ◽  
Adnan Ali ◽  
Eduard Monakhov ◽  
Muhammad Asghar
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Silicon Germanium ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
The Past ◽  
High Power Factor ◽  
Different Temperatures ◽  
P Type ◽  
Quartz Substrates

Over the past few years, thermoelectrics have gained interest with regard to thermoelectricity interconversion. The improvement in the efficiency of the thermoelectric material at an ambient temperature is the main problem of research. In this work, silicon–germanium (SiGe) thin films, owing to superior properties such as nontoxicity, high stability, and their integrability with silicon technologies, were studied for thermoelectric applications. P-type SiGe thin films were deposited on quartz substrates by DC/RF magnetron sputtering and annealed at three different temperatures for 1 hour. Significant enhancement in the Seebeck coefficient was achieved for the sample annealed at 670 °C. A high power factor of 4.1 μWcm−1K−2 was obtained at room temperature.

scholarly journals Studying and fabricating p - type transparent conducting antimony - doped SnO2 thin films by magnetron sputtering

2015 ◽  
Vol 18 (1) ◽  
pp. 23-33
Author(s):  
Phuc Huu Dang ◽  
Duan Van Nguyen ◽  
Vu Si Hoai Nguyen ◽  
Hieu Van Le ◽  
Tran Le
Keyword(s):  
Magnetron Sputtering ◽  
Hole Concentration ◽  
The Other ◽  
Working Pressure ◽  
Rutile Structure ◽  
Different Temperatures ◽  
Ambient Gas ◽  
Optimum Annealing Temperature ◽  
P Type ◽  
Deposited Films

Sb doped tin oxide films (ATO) were fabricated on Quart glasses from (SnO2 + Sb2O3) mixture ceramic target by direct current (DC) magnetron sputtering in Ar ambient gas at working pressure of 2.10-3 torr. X ray diffraction (XRD), Hall - effect measurements and UV-vis spectra were performed to characterize the deposited films. The substrate temperature of films was investigated for two ways. Films were annealed in Ar ambient gas after deposited at room temperature in one way. They were deposited directly with different temperatures in the other. It is found that the fabricated of ATO films in the first way was easier than the other. Deposited films showed p type electrical property, polycrystalline tetragonal rutile structure and their average transmittance was above 80 % in visible light range at the optimum annealing temperature of 500oC. The best electrical properties of film were obtained on 10 %wt Sb2O3 doped SnO2 target with its resistivity, hole concentration and Hall mobility are 0.55 Ω.cm, 1.2.1019 cm-3 and 0.54 cm2V-1s-1, respectively.

p-type in ZnO:N by codoping with Cr

2003 ◽  
Vol 786 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
J. Kossut ◽  
R. Butkute ◽  
W. Dobrowolski ◽  
...  
Keyword(s):  
Time Scale ◽  
Room Temperature ◽  
Surface Passivation ◽  
Hole Concentration ◽  
Rf Sputtering ◽  
Zno Films ◽  
Type Conductivity ◽  
Chromium Doping ◽  
P Type ◽  
Over Time

ABSTRACTWe report on the fabrication of p-ZnO films by thermal oxidation of Zn3N2 deposited by reactive rf sputtering. With additional chromium doping we achieved p-type conductivity with the hole concentration ∼5×1017cm−3 and the mobility of 23.6 cm2/Vs at room temperature. We developed a method of surface passivation of p-ZnO that maintains its p-type conductivity over time-scale of months.

scholarly journals Reactively Sputtered Sb-GaN Films and its Hetero-Junction Diode: The Exploration of the n-to-p Transition

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 210
Author(s):  
Cao Phuong Thao ◽  
Thi Tran Anh Tuan ◽  
Dong-Hau Kuo ◽  
Wen-Cheng Ke ◽  
Thach Thi Via Sa Na
Keyword(s):  
Radio Frequency ◽  
Hole Concentration ◽  
Reactive Sputtering ◽  
Bandgap Energy ◽  
Electrical Characteristics ◽  
Cation Site ◽  
N2 Atmosphere ◽  
Anion Site ◽  
Highly Mismatched Alloys ◽  
P Type

Sb anion-substituted gallium nitride films were fabricated by radio frequency reactive sputtering with single Sb-containing cermet targets with different Sb contents under Ar/N2 atmosphere. n-type GaN films with electron concentration of (1.40 ± 0.1) × 1017 cm−3 inverted to p-type Sb-GaN with hole concentration of (5.50 ± 0.3) × 1017 cm−3. The bandgap energy of Sb anion-added Sb-GaN films decreased from 3.20 to 2.72 eV with increasing Sb concentration. The formation of p-type Sb-GaN is attributed to the formation of Ga vacancy at higher Sb concentration. The coexistence of Sb at the Ga cation site and N anion site is an interesting and important result, as GaNSb had been well developed for highly mismatched alloys. The hetero-junction with p-type Sb-GaN/n-Si diodes was all formed by radio frequency (RF) reactive sputtering technology. The electrical characteristics of Sb-GaN diode devices were investigated from −20 to 20 V at room temperature (RT).

Optical and Electrical Properties of ZnO Thin Films Grown by Sol-Gel Method

2013 ◽  
Vol 200 ◽  
pp. 14-21 ◽  
Author(s):  
Waclaw Bala ◽  
Yurij Zorenko ◽  
Volodymyr Savchyn ◽  
Taras Voznyak ◽  
Kazimierz Paprocki ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Response ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Thickness Variation ◽  
Coating Method ◽  
Crystallinity Parameters ◽  
Different Temperatures ◽  
P Type ◽  
Quartz Substrates

The ZnO thin films have been produced on p-type Si and quartz substrates by the spin-coating method and after deposition were heated at different temperatures in the range from 650K to 850K. The photoluminescence (PL) and cathodoluminescence (CL) measurements were carried out at temperature range 12K-350K. I-V, C-V measurements were performed on the Al/ZnO/Si/Al structures at different temperatures. The structural properties of the ZnO thin films were carried out using x-ray and SEM method. The effects of the thickness variation and annealing temperature on the crystallinity parameters were observed. The electrical response of grains, grain boundaries, and contacts of the ZnO film was obtained.

scholarly journals ANNEALING TEMPERATURES’ EFFECTS ON MICROSTRUCTURE AND OPTICAL PROPERTIES OF Ba0.95Sr0.05TiO3 FILMS

2021 ◽  
Vol 23 (1) ◽  
pp. 31
Author(s):  
Yofentina Iriani ◽  
Fahru Nurosyid ◽  
Ratna Mayasari ◽  
Dianisa Khoirum Sandi
Keyword(s):  
Optical Properties ◽  
Annealing Temperature ◽  
Ferroelectric Material ◽  
Ferroelectric Materials ◽  
Bandgap Energy ◽  
Annealing Temperatures ◽  
Type Semiconductor ◽  
Bst Films ◽  
P Type ◽  
Quartz Substrates

ANNEALING TEMPERATURES’ EFFECTS ON MICROSTRUCTURE AND OPTICAL PROPERTIES OF Ba0.95Sr0.05TiO3 FILMS. Ferroelectric materials, one of which is Barium Strontium Titanate (BST), can be applied for photovoltaic. Ferroelectric films function as the P-type semiconductor in the P-N junction. BST (Ba0.95Sr0.05TiO3) films have been deposited on Pt/Si (111) and quartz substrates via the CSD method prepared by spin coater. The films were annealed at various temperatures of 800 °C, 900 °C, and 1000 °C to observe the annealing temperatures' effects on the microstructure and optical properties of the BST films. From the XRD results, the intensity of diffraction peaks gets higher along with the higher annealing temperature. It thus causes the level of crystallization and the crystal size of the Ba0.95Sr0.05TiO3 films to increase. The morphology results reveal that the grains size of the Ba0.95Sr0.05TiO3 films is getting larger with the higher annealing temperature. The optical properties examined in the Ba0.95Sr0.05TiO3 films include absorbance and bandgap energy values. Values of bandgap energy show a decrease with increasing sintering temperature. The smallest bandgap energy of the Ba0.95Sr0.05TiO3 film is achieved at 1000 °C of 3.20 eV. BST films were annealed at temperature 1000 °C attained from this study can be considered as candidate for a photovoltaic ferroelectric material.

P-TYPE ALUMINIUM-NITROGEN CO-DOPED ZnO FILMS PREPARED BY THERMAL OXIDATION OF SPUTTERED Zn3N2:Al PRECURSORS

2010 ◽  
Vol 24 (15n16) ◽  
pp. 2992-2998 ◽  
Author(s):  
C.-W. ZOU ◽  
R.-Q. CHEN ◽  
E. HAEMMERLE ◽  
W. GAO
Keyword(s):  
Thermal Oxidation ◽  
Hole Concentration ◽  
Hall Effect Measurement ◽  
Zno Films ◽  
Different Temperatures ◽  
Chemical States ◽  
Temperature Window ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

P -type ( Al , N ) co-doped ZnO films have been prepared by thermal oxidation of sputtered Zn 3 N 2: Al precursor films. The Zn 3 N 2: Al precursors are deposited by RF magnetron sputter and then annealed in oxygen atmosphere at different temperatures. The doped ZnO films are characterized by XRD, XPS and Hall effect measurement. The results indicate that the ZnO films only show p -type conductivity with an annealing in a temperature window: ZnO films show the best p -type characteristics with a hole concentration of 4.2 × 1017 cm -3, mobility of 0.52 cm/V.s and resistivity of 28Ωcm after an annealing at 550°C. Using these p -type ZnO films, ZnO p - n junctions are prepared which show good diode characteristics. The chemical states of N and Al dopants in the ZnO host material are investigated by XPS method after annealing at different temperatures; and the doping mechanisms are discussed based on the XPS results.

scholarly journals Effect of selenization time on optical, electrical properties and structure of CZTSSe thin films

2020 ◽  
Vol 5 (1) ◽  
pp. first
Author(s):  
Tuấn Anh Đào ◽  
Kiều Loan Phan Thị ◽  
Tuấn Hùng Lê Vũ ◽  
Hữu Kế Nguyễn
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Hole Concentration ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
Energy Hole ◽  
High Crystallinity ◽  
Photovoltaic Application ◽  
Coating Method ◽  
P Type

In this paper, we present a fabrication process of high crystallinity CZTSSe absorber layer. The CZTS structure is firstly prepared by spin-coating method, and then the film is converted into CZTSSe via selenization process using graphite box and tube furnace. The Se powder has been loaded into graphite box and used as source of selenizing vapors. Keeping the annealing temperature as constant, the structural, optical, electrical properties, and composition of CZTSSe thin films are investigated by changing the annealing time. X-ray diffraction revealed that these thin films are high crystallinity and strong preferential orientation along the (112) direction. The Raman spectra show the presence of the kesterite CZT Se phase which confirm the linkage of Se in structure. The band gaps (Eg) of the CZT Se thin films varied from 1,19 to 1.62 eV depend on the selenization times. At optimal annealing times, the p-type CZTSSe film has bandgap energy, hole concentration, and resistivity of 1,19 eV, 2,68 x 1019 cm-3 and 0,86Ω.cm respectively which are suitable for photovoltaic application.

Experimental and Theoretical (ab initio and DFT) Analysis of UV-Vis Spectra, Thermodynamic Functions and Non-linear Optical Properties of 2-Chloro-3,4-Dimethoxybenzaldehyde

2015 ◽  
Vol 8 (2) ◽  
pp. 2122-2134
Author(s):  
Sarvendra Kumar ◽  
Rajesh Kumar ◽  
Jayant Teotia ◽  
M. K. Yadav
Keyword(s):  
Thermodynamic Functions ◽  
Title Compound ◽  
Density Functional ◽  
Structural Characteristics ◽  
Basis Sets ◽  
Ultraviolet Absorption Spectrum ◽  
Non Linear ◽  
Different Temperatures ◽  
Linear Optical Properties ◽  
Linear Optical

In the present work, UV- Visible spectra of 2-Chloro-3,4-Dimethoxybenzaldehyde (2,3,4-CDMB) compound  have been carried out experimentally and theoretically. The ultraviolet absorption spectrum of title compound in three solvents (Acetone, Diethyl Ether, CCl4) of different polarity were examined in the range of 200–500 nm. The structure of the molecule was optimized and the structural characteristics were determined by HF and DFT (B3LYP) methods with 6-31+G(d,p) and 6-311++G(d,p) as basis sets. The excitation energy, wavelength corresponds to absorption maxima () and oscillator strength (f) are calculated by Time-Dependent Density Functional Theory (TD-DFT) using B3LYP/6-31+G(d,p) and B3LYP/6-311++G(d,p) as basis sets. The electric dipole moment (μ), polarizability (α) and the first hyperpolarizability (β ) have been computed to evaluate the non-linear optical (NLO) response of the investigated compound by HF and DFT (B3LYP) with already mentioned basis sets. Thermodynamic functions of the title compound at different temperatures were also calculated.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

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