scholarly journals A 16 Gbps, Full-Duplex Transceiver over Lossy On-Chip Interconnects in 28 nm CMOS Technology

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 717
Author(s):  
Arash Ebrahimi Jarihani ◽  
Sahar Sarafi ◽  
Michael Koeberle ◽  
Johannes Sturm ◽  
Andrea M. Tonello
Keyword(s):  
Power Efficiency ◽  
High Speed ◽  
Supply Voltage ◽  
Impedance Matching ◽  
Low Complexity ◽  
Cmos Technology ◽  
Data Rate ◽  
Full Duplex ◽  
On Chip ◽  
28 Nm

A high-speed full-duplex transceiver (FDT) over lossy on-chip interconnects is presented. The FDT employs a hybrid circuit to separate the inbound and outbound signals from each other and also performs echo-cancellation with the help of the main and the auxiliary drivers. A hybrid MOS device is utilized for impedance matching and conversion of the received voltage signal into a current signal for amplification. Moreover, a compensation capacitance ( C c ) is used at the output of the main driver to minimize the residual echo signal and achieve a higher data rate. The entire FDT architecture has been designed in TSMC 28 nm CMOS standard process with 0.9 V supply voltage. The performance results validate a 16 Gbps FD operation with a root-mean-square (RMS) jitter of 16.4 ps, and a power efficiency of 0.16 pJ/b/mm over a 5 mm on-chip interconnect without significant effect due to process-voltage-temperature (PVT) variations. To the best knowledge of the authors, this work shows the highest achievable full-duplex data rate, among the solutions reported in the literature to date, yet with low complexity, low layout area of 1581 μ m 2 and competitive power efficiency.

scholarly journals A 1.55-to-32-Gb/s Four-Lane Transmitter with 3-Tap Feed Forward Equalizer and Shared PLL in 28-nm CMOS

Electronics ◽  
2021 ◽  
Vol 10 (16) ◽  
pp. 1873
Author(s):  
Chen Cai ◽  
Xuqiang Zheng ◽  
Yong Chen ◽  
Danyu Wu ◽  
Jian Luan ◽  
...  
Keyword(s):  
Data Transmission ◽  
High Speed ◽  
Data Rate ◽  
Quality Data ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Feed Forward ◽  
Fully Integrated ◽  
Output Driver ◽  
28 Nm

This paper presents a fully integrated physical layer (PHY) transmitter (TX) suiting for multiple industrial protocols and compatible with different protocol versions. Targeting a wide operating range, the LC-based phase-locked loop (PLL) with a dual voltage-controlled oscillator (VCO) was integrated to provide the low jitter clock. Each lane with a configurable serialization scheme was adapted to adjust the data rate flexibly. To achieve high-speed data transmission, several bandwidth-extended techniques were introduced, and an optimized output driver with a 3-tap feed-forward equalizer (FFE) was proposed to accomplish high-quality data transmission and equalization. The TX prototype was fabricated in a 28-nm CMOS process, and a single-lane TX only occupied an active area of 0.048 mm2. The shared PLL and clock distribution circuits occupied an area of 0.54 mm2. The proposed PLL can support a tuning range that covers 6.2 to 16 GHz. Each lane's data rate ranged from 1.55 to 32 Gb/s, and the energy efficiency is 1.89 pJ/bit/lane at a 32-Gb/s data rate and can tune an equalization up to 10 dB.

scholarly journals The Demonstration of S2P (Serial-to-Parallel) Converter with Address Allocation Method Using 28 nm CMOS Technology

2021 ◽  
Vol 11 (1) ◽  
pp. 429
Author(s):  
Min-Su Kim ◽  
Youngoo Yang ◽  
Hyungmo Koo ◽  
Hansik Oh
Keyword(s):  
Integrated Circuits ◽  
Embedded System ◽  
Low Power ◽  
High Speed ◽  
Cmos Technology ◽  
Clock Frequency ◽  
Clock Generation ◽  
Allocation Method ◽  
Evaluation Board ◽  
28 Nm

To improve the performance of analog, RF, and digital integrated circuits, the cutting-edge advanced CMOS technology has been widely utilized. We successfully designed and implemented a high-speed and low-power serial-to-parallel (S2P) converter for 5G applications based on the 28 nm CMOS technology. It can update data easily and quickly using the proposed address allocation method. To verify the performances, an embedded system (NI-FPGA) for fast clock generation on the evaluation board level was also used. The proposed S2P converter circuit shows extremely low power consumption of 28.1 uW at 0.91 V with a core die area of 60 × 60 μm2 and operates successfully over a wide clock frequency range from 5 M to 40 MHz.

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

Dual Monitoring Communication for Self-Aware Network-on-Chip

2012 ◽  
Vol 3 (3) ◽  
pp. 72-91
Author(s):  
Liang Guang ◽  
Ethiopia Nigussie ◽  
Juha Plosila ◽  
Hannu Tenhunen
Keyword(s):  
High Speed ◽  
Data Communication ◽  
Cmos Technology ◽  
Network On Chip ◽  
Time Profile ◽  
Self Awareness ◽  
Monitoring Networks ◽  
Communication Architecture ◽  
Run Time ◽  
On Chip

Self-aware and adaptive Network-on-Chip (NoC) with dual monitoring networks is presented. Proper monitoring interface is an essential prerequisite to adaptive system reconfiguration in parallel on-chip computing. This work proposes a DMC (dual monitoring communication) architecture to support self-awareness on the NoC platform. One type of monitoring communication is integrated with data channel, in order to trace the run-time profile of data communication in high-speed on-chip networking. The other type is separate from the data communication, and is needed to report the run-time profile to the supervising monitor. Direct latency monitoring on mesochronous NoC is presented as a case study and is directly traced in the integrated communication with a novel latency monitoring table in each router. The latency information is reported by the separate monitoring communication to the supervising monitor, which reconfigures the system to adjust the latency, for instance by dynamic voltage and frequency scaling. With quantitative evaluation using synthetic traces and real applications, the effectiveness and efficiency of direct latency monitoring with DMC architecture is demonstrated. The area overhead of DMC architecture is estimated to be small in 65nm CMOS technology.

A LOW POWER AND VARIATION-INSENSITIVE CURRENT-MODE SIGNALING SCHEME

2013 ◽  
Vol 22 (08) ◽  
pp. 1350068
Author(s):  
XINSHENG WANG ◽  
YIZHE HU ◽  
LIANG HAN ◽  
JINGHU LI ◽  
CHENXU WANG ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
Current Mode ◽  
Signal Propagation ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Noise Performance ◽  
On Chip ◽  
Variation Tolerance ◽  
Driving Signal

Process and supply variations all have a large influence on current-mode signaling (CMS) circuits, limiting their application on the fields of high-speed low power communication over long on-chip interconnects. A variation-insensitive CMS scheme (CMS-Bias) was offered, employing a particular bias circuit to compensate the effects of variations, and was robust enough against inter-die and intra-die variations. In this paper, we studied in detail the principle of variation tolerance of the CMS circuit and proposed a more suitable bias circuit for it. The CMS-Bias with the proposed bias circuit (CMS-Proposed) can acquire the same variation tolerance but consume less energy, compared with CMS-Bias with the original bias circuit (CMS-Original). Both the CMS schemes were fabricated in 180 nm CMOS technology. Simulation and measured results indicate that the two CMS interconnect circuits have the similar signal propagation delay when driving signal over a 10 mm line, but the CMS-Proposed offers about 9% reduction in energy/bit and 7.2% reduction in energy-delay-product (EDP) over the CMS-Original. Simulation results show that the two CMS schemes only change about 5% in delay when suffering intra-die variations, and have the same robustness against inter-die variations. Both simulation and measurements all show that the proposed bias circuits, employing self-biasing structure, contribute to robustness against supply variations to some extent. Jitter analysis presents the two CMS schemes have the same noise performance.

scholarly journals A 2.5 Gbps, 10-Lane, Low-Power, LVDS Transceiver in 28 nm CMOS Technology

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 350 ◽  
Author(s):  
Xu Bai ◽  
Jianzhong Zhao ◽  
Shi Zuo ◽  
Yumei Zhou
Keyword(s):  
Low Power ◽  
High Speed ◽  
Low Voltage ◽  
Cmos Technology ◽  
Common Mode ◽  
Serial Interface ◽  
Common Mode Voltage ◽  
Rail To Rail ◽  
The Common ◽  
28 Nm

This paper presents a 2.5 Gbps 10-lane low-power low voltage differential signaling (LVDS) transceiver for a high-speed serial interface. In the transmitter, a complementary MOS H-bridge output driver with a common mode feedback (CMFB) circuit was used to achieve a stipulated common mode voltage over process, voltage and temperature (PVT) variations. The receiver was composed of a pre-stage common mode voltage shifter and a rail-to-rail comparator. The common mode voltage shifter with an error amplifier shifted the common mode voltage of the input signal to the required range, thereby the following rail-to-rail comparator obtained the maximum transconductance to recover the signal. The chip was fabricated using SMIC 28 nm CMOS technology, and had an area of 1.46 mm2. The measured results showed that the output swing of the transmitter was around 350 mV, with a root-mean-square (RMS) jitter of 3.65 [email protected] Gbps, and the power consumption of each lane was 16.51 mW under a 1.8 V power supply.

scholarly journals Low-Complexity Hardware Interleaver/Deinterleaver for IEEE 802.11a/g/n WLAN

VLSI Design ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
Zhen-dong Zhang ◽  
Bin Wu ◽  
Yu-mei Zhou ◽  
Xin Zhang
Keyword(s):  
High Speed ◽  
Critical Path ◽  
Low Complexity ◽  
Cmos Technology ◽  
Path Delay ◽  
Hardware Complexity ◽  
Ieee 802.11A ◽  
Comparison Results ◽  
Mathematical Formulas ◽  
High Flexibility

A high-speed low-complexity hardware interleaver/deinterleaver is presented. It supports all 77 802.11n high-throughput (HT) modulation and coding schemes (MCSs) with short and long guard intervals and the 8 non-HT MCSs defined in 802.11a/g. The paper proposes a design methodology that distributes the three permutations of an interleaver to both write address and read address. The methodology not only reduces the critical path delay but also facilitates the address generation. In addition, the complex mathematical formulas are replaced with optimized hardware structures in which hardware intensive dividers and multipliers are avoided. Using 0.13 um CMOS technology, the cell area of the proposed interleaver/deinterleaver is 0.07 mm2, and the synthesized maximal working frequency is 400 MHz. Comparison results show that it outperforms the three other similar works with respect to hardware complexity and max frequency while maintaining high flexibility.

A New Technique for Designing Low-Power High-Speed Domino Logic Circuits in FinFET Technology

2019 ◽  
Vol 28 (10) ◽  
pp. 1950165 ◽  
Author(s):  
Sandeep Garg ◽  
Tarun K. Gupta
Keyword(s):  
Low Power ◽  
High Speed ◽  
Supply Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Power Reduction ◽  
Maximum Power ◽  
Oxide Semiconductor ◽  
Domino Logic ◽  
Maximum Delay

In this paper, a fin field-effect transistor (FinFET)-based domino technique dynamic node-driven feedback transistor domino logic (DNDFTDL) is designed for low-power, high-speed and improved noise performance. In the proposed domino technique, the concept of current division is explored below the evaluation network for enhancement of performance parameters. Simulations are carried out for 32-nm complementary metal–oxide–semiconductor (CMOS) and FinFET node using HSPICE for 2-, 4-, 8- and 16-input OR gates with a DC supply voltage of 0.9[Formula: see text]V. Proposed technique shows a maximum power reduction of 73.93% in FinFET short-gate (SG) mode as compared to conditional stacked keeper domino logic (CSKDL) technique and a maximum power reduction of 72.12% as compared to modified high-speed clocked delay domino logic (M-HSCD) technique in FinFET low-power (LP) mode. The proposed technique shows a maximum delay reduction of 35.52% as compared to voltage comparison domino (VCD) technique in SG mode and a reduction of 25.01% as compared to current mirror footed domino logic (CMFD) technique in LP mode. The unity noise gain (UNG) of the proposed circuit is 1.72–[Formula: see text] higher compared to different existing techniques in FinFET SG mode and is 1.42–[Formula: see text] higher in FinFET LP mode. The Figure of Merit (FOM) of the proposed circuit is up to [Formula: see text] higher as compared to existing domino logic techniques because of lower values of power, delay and area and higher values of UNG of the proposed circuit. In addition, the proposed technique shows a maximum power reduction of up to 68.64% in FinFET technology as compared to its counterpart in CMOS technology.

Characterization of On-Chip Interconnects: Case Study in 28 nm CMOS Technology

2019 ◽  
Author(s):  
Arash Ebrahimi Jarihani ◽  
Sahar Sarafi ◽  
Michael Koberle ◽  
Johannes Sturm ◽  
Andrea M. Tonello
Keyword(s):  
Cmos Technology ◽  
On Chip ◽  
28 Nm

Design of DQPSK Demodulator for Implantable Biomedical Devices

2020 ◽  
Vol 29 (11) ◽  
pp. 2020007
Author(s):  
Vaibhav Garg ◽  
Kavindra Kandpal
Keyword(s):  
Low Power ◽  
Carrier Frequency ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Vital Role ◽  
Data Rate ◽  
High Data Rate ◽  
Biomedical Devices ◽  
High Data ◽  
Implantable Biomedical Devices

Implantable biomedical devices (IBDs) play a vital role in today’s healthcare industry. Such applications demand high data rate, low power and small-sized demodulators. This work presents a simple small-sized low-power architecture for differential quadrature phase shift keying (DQPSK) demodulator for these devices. The proposed circuitry is designed in UMC 90-nm CMOS technology and occupies a layout area of 0.015[Formula: see text]mm2. It is operated at 1-V supply voltage with a power consumption of 405[Formula: see text][Formula: see text]W. The carrier frequency is 10[Formula: see text]MHz and the obtained data rate is 20[Formula: see text]Mbps. Hence it exhibits a high data-rate-to-carrier-frequency (DRCF) ratio of 200% making it ideal for IBDs.

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